Features
l
Fast Switching Speed
l
Low Current Leakage
l
Low Cost
l
Compression Bond Construction
l
Surface Mount Application
Maximum Ratings
l
Operation & Storage Temperature: -55
o
C to +150
o
C
l
Maximum Thermal Resistance: 400k/W Junction to Ambient
Electrical Characteristics @ 25
o
C Unless Otherwise Specified
Pulse test: Pulse width 300 usec, Duty cycle 2%.
DL4154
Schottky Barrier
Switching Diode
Reverse Voltage
V
R
25V
Peak Reverse Voltage
V
RM
35V
Average Rectified
Current
I
O
150mA
Resistive Load
f>50Hz
Power Dissipation
P
TOT
500mW
Junction Temperature
T
J
175
o
C
Maximum Instantaneous
Forward Volt.
V
F
1.0V
I
FM
=10mA;
T
J
=25
o
C
Maximum DC Reverse
Current At Rated DC
Blocking Volt.
I
R
0.1uA
V
R
=25V
T
J
=25
o
C
Typical Junction
Capacitance
C
J
4pF
Measured at
1.0MHz, V
R
=4.0V
Reverse Recovery Time
T
rr
2nS
I
F
=10mA V
R
=6V
I
R
=1mA
R
L
=100OHMS
DIMENSION
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.134
.142
3.40
3.60
B
.008
.016
.20
.40
C
.055
.059
1.40
1.50
0.030"
0.105
0.075"
SUGGESTED SOLDER
PAD LAYOUT
MINIMELF
A
B
C
Cathode Mark
www.
mccsemi
.com
omponents
21201 Itasca Street Chatsworth
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M C C
DL4154
0
100
200
300
400
500
0
100
200
P,
P
O
WER
DISSIP
AT
I
O
N
(mW)
d
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Derating Curve
A
1.0
0.1
0.01
10
100
1000
0
1
2
I
,
FOR
W
ARD
CURRENT
(mA)
F
V , FORWARD VOLTAGE (V)
Fig. 2 Forward Characteristics
F
T = 100 C
j
T = 25 C
j
0.7
0.8
0.9
1.0
1.1
0
2
4
6
8
10
RELA
TIVE
CAP
ACIT
ANCE
RA
TI
O
[C
(V
)/C
(0V)]
TO
T
R
TO
T
V , REVERSE VOLTAGE (V)
Fig. 3 Relative Capacitance Variation
R
T = 25 C
f = 1.0MHz
j
1
10
100
1,000
10,000
0
100
200
I
,
LEAKAGE
CURRENT
(nA)
R
T , JUNCTION TEMPERATURE ( C)
Fig. 4 Leakage Current vs Junction Temperature
j
M C C
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mccsemi
.com
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