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Электронный компонент: ES1D

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ES1A
THRU
ES1M
1 Amp Super Fast
Recovery
Silicon Rectifier
50 to 1000 Volts
DO-214AC
(SMAJ) (High Profile)
Features
For Surface Mount Applications
Extremely Low Thermal Resistance
Easy Pick And Place
High Temp Soldering: 250
C for 10 Seconds At Terminals
Superfast Recovery Times For High Efficiency
Maximum Ratings
0.070"
0.090"
0.085"
SUGGESTED SOLDER
PAD LAYOUT
Electrical Characteristics @ 25
C Unless Otherwise Specified
Average Forward
Current
I
F(AV)
1.0A
T
J
= 75
C
Peak Forward Surge
Current
I
FSM
30A
8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
V
F
I
FM
= 1.0A;
T
J
= 25
C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
R
5
A
100
A
T
J
= 25
C
T
J
= 100
C
Typical Junction
Capacitance
C
J
45pF
Measured at
1.0MHz, V
R
=4.0V
*Pulse test: Pulse width 200
sec, Duty cycle 2%
Operating Temperature: -50
C to +150
C
Storage Temperature: -50
C to +150
C
Maximum Thermal Resistance; 15
C/W Junction To Lead
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
ES1M
ES1M 1000V 700V 1000V
ES1A ES1A 50V 35V 50V
ES1B ES1B 100V 70V 100V
ES1C ES1C 150V 105V 150V
ES1D ES1D 200V 140V 200V
ES1G ES1G 400V 280V 400V
ES1J ES1J 600V 420V 600V
ES1K ES1K 800V 560V 800V
Maximum Reverse
Recovery Time
T
rr
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
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mccsemi
.com
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A .078 .116 1.98 2.95
B .067 .089 1.70 2.25
C .002 .008 .05 .20
D --- .02 --- .51
E .035 .055 .89 1.40
F .065 .096 1.65 2.45
G .205 .224 5.21 5.69
H .160 .180 4.06 4.57
J .100 .112 2.57 2.84
H
J
E
F
G
A
B
D
C
Cathode Band
ES1A-D
50ns
ES1G-K
60ns
ES1M
100ns
ES1A-D
.975V
ES1G-K
1.35V
ES1M
1.60V
omponents
21201 Itasca Street Chatsworth
!"#
$ % !"#
M C C
ES1A thru ES1M
Average Forward Rectified Current - Amperes
versus
Ambient Temperature -
C
Figure 2
Forward Derating Curve
0
150
25
50
75
100
0
.2
.4
.6
.8
1.0
1.2
1.4
Single Phase, Half Wave
60Hz Resistive or Inductive Load
Amps
C
125
1.6
1.8
2.0
2.2
2.4
Instantaneous Forward Current - Amperes
versus
Instantaneous Forward Voltage - Volts
Figure 1
Typical Forward Characteristics
4
6
20
10
Amps
.2
.4
.6
.8
1.0
1.2
.01
.02
.04
.06
.1
.2
.4
.6
1
2
25
C
Volts
Figure 3
Junction Capacitance
.1
.2
1
.4
2
10
20
40
4
100 200
1
2
6
10
20
100
Junction Capacitance - pF
versus
Reverse Voltage - Volts
pF
Volts
60
40
4
400
1000
T
J
=25
C
M C C
www.
mccsemi
.com
ES1A thru ES1M
Figure 5
New SMA Assembly
Round Lead
Process
t
rr
+0.5A
0
-0.25
-1.0
1cm
Set Time Base for 20/100ns/cm
25Vdc
1
50
10
Oscilloscope
Note 1
Pulse
Generator
Note 2
Notes:
1. Rise Time = 7ns max.
Input impedance = 1 megohm, 22pF
2. Rise Time = 10ns max.
Source impedance = 50 ohms
3. Resistors are non-inductive
Figure 6
Reverse Recovery Time Characteristic And Test Circuit Diagram
1
100
4
0
5
10
15
8
Figure 4
Peak Forward Surge Current
Peak Forward Surge Current - Amperes
versus
Number Of Cycles At 60Hz - Cycles
Amps
Cycles
2
6
10 20
60 80
40
20
25
30
M C C
www.
mccsemi
.com