R1200F
THRU
R2000F
500 Milliamp High
Voltage Fast Recovery
Silicon Rectifier
1200 to 2000 Volts
Features
Low Cost
Low Leakage
Low Forward Voltage Drop
High Current Capability
High Voltage
Fast Switching For Higher Efficiency
Maximum Ratings
Operating Temperature: -55
C to +150
C
Storage Temperature: -55
C to +150
C
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
R1200F --- 1200V 840V 1200V
R1500F --- 1500V 1050V 1500V
R1800F --- 1800V 1260V 1800V
R2000F --- 2000V 1400V 2000V
Electrical Characteristics @ 25
C Unless Otherwise Specified
Average Forward
Current
I
F(AV)
500mA
T
A
= 50
C
Peak Forward Surge
Current
I
FSM
30A
8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
R1200F-R1800F
R2000F
V
F
2.4V
3.0V
I
FM
= 0.5A;
T
A
= 50
C
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
R
5.0
A
50
A
T
A
= 25
C
T
A
= 100
C
Typical Junction
Capacitance
C
J
30pF
Measured at
1.0MHz, V
R
=4.0V
Maximum Reverse
Recovery Time
T
rr
500nS
DO-41
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.166
.205
4.10
5.20
B
.080
.107
2.00
2.70
C
.028
.034
.70
.90
D
1.000
---
25.40
---
A
B
C
D
D
Cathode
Mark
www.
mccsemi
.com
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
M C C
R1200F thru R2000F
1
100
4
0
5
10
15
8
Figure 3
Peak Forward Surge Current
Peak Forward Surge Current - Amperes
versus
Number Of Cycles At 60Hz - Cycles
Amps
Cycles
2
6
10 20
60 80
40
20
25
30
Instantaneous Reverse Current - Micro Amps
versus
Percent Of Rated Peak Reverse Voltage - Volts
Figure 1
Typical Reverse Characteristics
0
120
20
40
60
80
.01
.02
.04
.06
T
J
= 25
C
A
Volts
100
.08
.1
.2
.4
.6
.8
1
2
4
Average Forward Rectified Current - Amperes
versus
Ambient Temperature -
C
Figure 2
Forward Derating Curve
0
150
25
50
75
100
0
100
200
300
Single Phase, Half Wave
60Hz Resistive or Inductive Load
mA
C
125
400
500
600
www.
mccsemi
.com
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