SCHOTTKY DIE SPECIFICATION
TYPE: SB10100
100 V 10 A Standard VF
Single Anode
SYM
Die Sort
UNIT
DC Blocking Voltage: Ir=1mA(for wafer form)
VRRM
105
Volt
Ir=0.5mA (for dice form)
IFAV
Amp
VF MAX
0.82
Volt
IR MAX
0.18
mA
Cj MAX
pF
IFSM
Amp
Tj
C
TSTG
C
Specification apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DIM
um
2
Mil
2
A
2590
101.97
B
2490
98.0
C
2510
98.8
D
254
10
305
12
Operating Junction Temperature
Storage Temperatures
ITEM
Die Size
DICE OUTLINE DRAWING
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
VR= 100 Volt, Ta=25C
ELECTRICAL CHARACTERISTICS
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
General Description:
200
-65 to +125
-65 to +125
0.83
@ 10 Amperes,Ta= 25C
Maximum Instantaneous Reverse Voltage
PS:
(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
Thickness (Max)
0.2
Top Metal Pad Size
Passivation Seal
Thickness (Min)
Micro-Electro-Magnetical Tech Co.
Spec. Limit
100
10
B
C
A
Top-side Metal
D
SiO2 Passivation
P
+
Guard Ring
Back-side Metal
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