High Power Switching & Attenuation
Vbr
1
Cj-10 V
2
Tl
3
Rs
5
@
Rs
5
@
Rs
5
@
jc
MIN
MAX
TYP
1 mA
10 mA
100 mA
MAX
Part
(V)
(pF)
(
S)
MAX
MAX
MAX
C/W
Number
(Ohms)
(Ohms)
(Ohms)
250
.08
1.0
20
8
1.5
20
MMN7061
250
.2
1.0
8
3.5
1.0
15
MMN7063
500
.1
1.5
15
5
1.2
15
MMN7066
500
.3
2.0
8
3.5
0.8
10
MMN7068
44
MicroMetrics, Inc. 136 Harvey Road, Building C, Londonderry, NH 03053
Voice: 603-641-3800, Fax: 603-641-3500, Internet: www.micrometrics.com, E-mail: serv@micrometrics.com
Notes:
1. Reverse Breakdown Voltage measured at 10A.
2. Junction Capacitance measured at -10 volts at 1 MHz.
3. Minority Carrier lifetime measured with IF = 10 mA, IR = 6mA.
4. RF Switching speed measured from 90% to 10% and 10% to 90% transmission. Drive output = +20 mA
and -4 volts, 200 mA spike with a rise time of 2 nS.
5. Series Resistance is measured at 1 GHz using transmission loss techniques.
Maximum Ratings
Operating Temperature
-55C to 150C
Storage Temperature
-65C to 200C
Reverse Breakdown
from 25 volts to 500 volts
Voltage (Vbr)
at 10 A
Junction Capacitance (Cj-10)
from .07 to .5 pF at 10 volts
Switching Speed (Ts)
from 1 nS to 25 nS
Lifetime (Tl)
from 10 nS to 2.0 S TYP
Chip Thickness
.004" - .007" thick
Control Devices: MMN 7000 Series (Continued)
Electrical Characteristics
Contr
ol Devices
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