Control Devices: MMP 7000 Series
Low - High Power PIN Diodes
Description
The MicroMetrics MMP 7000 series
PIN diodes are manufactured using
very high resistivity silicon epitaxial
material grown on a highly doped low
resistivity substrate. Combined with a
grown junction P++ layer, this yields a
very abrupt structured "I" region with
minimum outdoping and low voltage
punchthrough characteristics.
Our high temperature passivation and
state of the art metallization produce
diodes that are designed to cover a
wide range of applications that fall
into the general categories of switch-
ing, phase switching, attenuating and
limiting. These devices are rugged and
able to meet all visual criteria in space
and military applications.
Applications
The MMP series are used in switch
applications which include high speed
low power switches, medium speed
higher power switches, high power
switches and attenuators, TR switches,
digital phase shifters and duplexers.
38
Features
High Temperature Passivation for
Reliability
Grown Junction for sharp "I" Region
Interface
Full Area Gold Contact for the Lowest
Capacitance and Largest Bonding Pad
Available
Lot Traceability and Lot Control,
Assuring High Reproducibility
Packaging
Chip, Glass, Ceramic
Contr
ol Devices
Typical Performance
.10
1.0
10
100
1000
SERIES RESIST
ANCE, R
S
(Ohms)
MMP7026
MMP7027
MMP7028
MMP7029
MMP7030
.01
.10
1.0
10
100
FORWARD BIAS CURRENT, IF
(mA)
.10
1.0
10
100
1000
SERIES RESIST
ANCE, R
S
(Ohms)
MMP7021
MMP7023
MMP7024
MMP7025
.01
.10
1.0
10
100
MMP7022
FORWARD BIAS CURRENT, IF
(mA)
.10
1.0
10
100
1000
SERIES RESIST
ANCE, R
S
(Ohms)
MMP7033
MMP7034
MMP7036
MMP7035
MMP7037
MMP7032
.01
.10
1.0
10
100
FORWARD BIAS CURRENT, IF
(mA)
MicroMetrics, Inc. 136 Harvey Road, Building C, Londonderry, NH 03053
Voice: 603-641-3800, Fax: 603-641-3500, Internet: www.micrometrics.com, E-mail: serv@micrometrics.com
Control Devices: MMP 7000 Series
Electrical Characteristics
39
Ultra Fast Switching
Vbr
1
Cj-10 V
2
Tl
3
jc
TS.
RS@
RS@
MIN
MAX
TYP
MAX
Max.
50 MA
10 MA
Part
(V)
(pF)
(nS)
C/W
NS
OHMS MAX
OHMS TYP
Number
25
.1
10
60
1.5
.7
1
MMP7010
25
.15
10
50
1.5
.55
.8
MMP7011
25
.2
10
40
1.5
.45
.7
MMP7012
25
.25
10
35
1.5
.4
.6
MMP7013
Fast Switching, Low Power
Vbr1
Cj-10 V2
Tl3
jc
TS.
RS@
RS@
MIN
MAX
TYP
MAX
MAX.
75 MA
20 MA
Part
(V)
(pF)
(nS)
C/W
NS
OHMS MAX
OHMS TYP
Number
70
.05
60
80
5
.9
1.2
MMP7020
70
.1
60
70
5
.7
1.0
MMP7021
70
.15
60
60
5
.6
.9
MMP7022
70
.2
60
55
5
.5
.7
MMP7023
70
.25
60
50
5
.45
.5
MMP7024
100
.03
100
90
10
1.2
1.9
MMP7025
100
.07
100
80
10
.9
1.5
MMP7026
100
.1
100
70
10
.7
1.2
MMP7027
100
.15
100
60
10
.6
1.0
MMP7028
100
.2
100
55
10
.5
.9
MMP7029
100
.3
100
50
15
.45
.8
MMP7030
200
.03
225
90
15
1.9
3.0
MMP7031
200
.07
225
80
15
1.2
2.2
MMP7032
200
.1
225
70
15
.9
1.6
MMP7033
200
.15
225
60
15
.8
1.0
MMP7034
200
.2
225
55
15
.7
.8
MMP7035
200
.3
225
50
15
.6
.7
MMP7036
Contr
ol Devices
Notes:
1. Reverse Breakdown Voltage measured at 10a.
2. Junction Capacitance measured at -10 volts at 1 MHz.
3. Minority Carrier lifetime measured with IF = 10 mA IR = 6mA.
4. RF Switching speed measured from 90% to 10% and 10% to 90% transmission.
Drive output = +20 mA and -4 volts, 200 mA spike with a rise time of 2 nS.
5. Series Resistance is measured at 1 GHz using transmission loss techniques.
MicroMetrics, Inc. 136 Harvey Road, Building C, Londonderry, NH 03053
Voice: 603-641-3800, Fax: 603-641-3500, Internet: www.micrometrics.com, E-mail: serv@micrometrics.com
Maximum Ratings
Operating Temperature
-55C to 150C
Storage Temperature
-65C to 200C
Reverse Breakdown
from 25 volts to 500 volts
Voltage (Vbr)
volts at 10 A
Junction Capacitance (Cj-10)
from .03 pF to .5 pF at 10 volts
Switching Speed (TS)
from 1 nS to 25 nS
Lifetime (Tl)
from 5 nS to 2.0 S
Chip Thickness
.004 - .007" thick
Continued on next page.
Medium Power, General Purpose
Vbr1
Cj-10 V2
TL3
jc
TS.
RS@
RS@
MIN
MAX
TYP
MAX
MAX.
75 MA
20MA
Part
(V)
(pF)
(nS)
C/W
NS
OHMS MAX
OHMS TYP
Number
200
.03
400
65
20
2.6
3.5
MMP7040
200
.07
400
60
20
1.5
2.2
MMP7041
200
.1
400
55
20
1.3
2.0
MMP7042
200
.15
400
50
20
1.0
1.9
MMP7043
200
.2
400
45
20
.8
1.7
MMP7044
200
.3
400
40
20
.7
1.4
MMP7045
200
.5
400
20
20
.6
1.2
MMP7046
200
.03
600
60
25
2.6
3.5
MMP7047
200
.07
600
55
25
1.6
3.2
MMP7048
200
.1
600
50
25
1.2
2.0
MMP7049
200
.15
600
45
25
.9
1.9
MMP7050
200
.2
600
40
25
.8
1.7
MMP7051
200
.3
600
35
25
.7
1.4
MMP7052
200
.5
600
15
25
.6
1.2
MMP7053
High Power Switching & Attenuation
Vbr
1
Cj-10 V
2
TL
3
Rs
5
@
Rs
5
@
Rs
5
@
jc
MIN
MAX
TYP
1 mA
10 mA
100 mA
MAX
Part
(V)
(pF)
(S)
MAX
MAX
MAX
C/W
Number
(Ohms)
(Ohms)
(Ohms)
250
.05
1.0
25
10
2.0
20
MMP7060
250
.08
1.0
20
8
1.5
20
MMP7061
250
.1
1.0
15
6
1.2
20
MMP7062
250
.2
1.0
8
3.5
1.0
15
MMP7063
250
.3
1.5
6
2.0
0.8
15
MMP7064
500
.08
1.5
40
8
1.5
15
MMP7065
500
.1
1.5
15
5
1.2
15
MMP7066
500
.2
1.5
10
4
1.0
12
MMP7067
500
.3
2.0
8
3.5
0.8
10
MMP7068
500
.5
2.0
6
2.0
0.7
10
MMP7069
Contr
ol Devices
Notes:
1. Reverse Breakdown Voltage measured at 10 A.
2. Junction Capacitance measured at -10 volts at 1 MHz.
3. Minority Carrier lifetime measured with IF = 10 mA, IR = 6 mA.
4. RF Switching speed measured from 90% to 10% and 10% to 90% transmission. Drive output = +20 mA
and -4 volts, 200 mA spike with a rise time of 2 nS.
5. Series Resistance is measured at 1 GHz using transmission loss techniques.
Maximum Ratings
Operating Temperature
-55C to 150C
Storage Temperature
-65C to 200C
Reverse Breakdown
from 25 volts to 500 volts
Voltage (Vbr)
volts at 10 A
Junction Capacitance (Cj-10)
from .03 pF to .5 pF at 10 volts
Switching Speed (Ts)
from 1 nS to 25 nS
Lifetime (Tl)
from 5 nS to 2.0 S
Chip Thickness
.004" - .007" thick
40
Control Devices: MMP 7000 Series (Continued)
MicroMetrics, Inc. 136 Harvey Road, Building C, Londonderry, NH 03053
Voice: 603-641-3800, Fax: 603-641-3500, Internet: www.micrometrics.com, E-mail: serv@micrometrics.com
Electrical Characteristics
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