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Электронный компонент: MNL100

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Schottky Diodes: MNL 100 Series
Low Barrier Schottky Mixer Diodes
Description
The MicroMetrics MNL 100 series of
Low Barrier Schottky diodes are metal
semiconductor junction devices that
have a typical short reverse recovery
time. This allows their use at high
microwave frequencies when the
performance of the n-type may be
reduced. The forward I-V of schottky
diodes is determined by the junction
metal used. For every different metal
selection there is a different forward
voltage characteristic or "Barrier
Height". These devices are best suited
for applications through 26 GHz.
Applications
Low Barrier Schottky Mixer diodes are
ideally suited for use in mixers,
doublers and modulators.
Features
Multi-Junction Chips
Low 1/F Noise
Small Junction Capacitance
Packaging
Chip, Glass, Ceramic, Beam Lead
50
Schottky Diodes
MicroMetrics, Inc. 136 Harvey Road, Building C, Londonderry, NH 03053
Voice: 603-641-3800, Fax: 603-641-3500, Internet: www.micrometrics.com, E-mail: serv@micrometrics.com
Typical Performance
10
0
.5
1.0
10
1
100
A
100 mA
FORW
ARD CURRENT
FORWARD VOLTAGE
(V)
Schottky Diodes: MNL 100 Series
Electrical Characteristics
51
Schottky Diodes
MicroMetrics, Inc. 136 Harvey Road, Building C, Londonderry, NH 03053
Voice: 603-641-3800, Fax: 603-641-3500, Internet: www.micrometrics.com, E-mail: serv@micrometrics.com
Breakdown
Forward
Junction
Series
Tangential
Voltage
Voltage
Capacitance
Resistance
Signal
@10A
@1mA
@0 Vdc 1MHz
@5 mA
Sensitivity
MIN
MAX
TYP
TYP
TYP
Part
(V)
(V)
(pF)
(Ohms)
(dB)
Number
2.0
0.25
0.08
16.0
-55
MNL100
2.0
0.28
0.1
16.0
-52
MNL101
2.0
0.3
0.12
14.0
-50
MNL102
2.0
0.32
0.14
10.0
-48
MNL103
3.0
0.25
0.08
16.0
-55
MNL104
3.0
0.28
0.1
16.0
-52
MNL105
3.0
0.3
0.12
14.0
-50
MNL106
3.0
0.32
0.14
10.0
-48
MNL107
4.0
0.25
0.08
16.0
-55
MNL108
4.0
0.28
0.1
16.0
-52
MNL109
4.0
0.3
0.12
14.0
-50
MNL110
4.0
0.32
0.14
10.0
-48
MNL111
5.0
0.25
0.08
16.0
-55
MNL112
5.0
0.28
0.1
16.0
-52
MNL113
5.0
0.3
0.12
14.0
-50
MNL114
5.0
0.32
0.14
10.0
-48
MNL115
Maximum Ratings
Operating Temperature
-55C to + 150C
Storage Temperature
-65C to + 200C
Power Dissipation @25C
250mW
(derate linearly to zero at 150C)