July 2000
1
MIC5011
MIC5011
Micrel
MIC5011
Minimum Parts High- or Low-Side MOSFET Driver
General Description
The MIC5011 is the "minimum parts count" member of the
Micrel MIC501X driver family. These ICs are designed to
drive the gate of an N-channel power MOSFET above the
supply rail in high-side power switch applications. The 8-pin
MIC5011 is extremely easy to use, requiring only a power
FET and nominal supply decoupling to implement either a
high- or low-side switch.
The MIC5011 charges a 1nF load in 60
s typical with no
external components. Faster switching is achieved by add-
ing two 1nF charge pump capacitors. Operation down to
4.75V allows the MIC5011 to drive standard MOSFETs in
5V low-side applications by boosting the gate voltage
above the logic supply. In addition, multiple paralleled
MOSFETs can be driven by a single MIC5011 for ultra-high
current applications.
Other members of the Micrel driver family include the
MIC5012 dual driver and MIC5013 protected 8-pin driver.
For new designs, Micrel recommends the pin-compatible
MIC5014 MOSFET driver.
Features
4.75V to 32V operation
Less than 1
A standby current in the "off" state
Internal charge pump to drive the gate of an N-channel
power FET above supply
Available in small outline SOIC packages
Internal zener clamp for gate protection
Minimum external parts count
Can be used to boost drive to low-side power FETs
operating on logic supplies
25
s typical turn-on time with optional external
capacitors
Implements high- or low-side drivers
Applications
Lamp drivers
Relay and solenoid drivers
Heater switching
Power bus switching
Typical Applications
Ordering Information
Part Number
Temp. Range
Package
MIC5011BN
40
C to +85
C
8-pin Plastic DIP
MIC5011BM
40
C to +85
C
8-pin SOIC
Input
Source
Gate
1
2
3
4
8
MIC5011
7
6
5
V+
Gnd
C1
Com
C2
48V
5V
IRF530
100W
Heater
+
10F
Control Input
Figure 2. Low Side Driver
ON
OFF
Protected under one or more of the following Micrel patents:
patent #4,951,101; patent #4,914,546
Note: The MIC5011 is ESD sensitive.
Input
Source
Gate
1
2
3
4
8
MIC5011
7
6
5
V+
Gnd
C1
Com
C2
+
10F
Control Input
#6014
IRF531
14.4V
Figure 1. High Side Driver
ON
OFF
Micrel, Inc. 1849 Fortune Drive San Jose, CA 95131 USA tel + 1 (408) 944-0800 fax + 1 (408) 944-0970 http://www.micrel.com
MIC5011
Micrel
MIC5011
2
July 2000
Pin Description
(Refer to Typical Applications)
Pin Number
Pin Name
Pin Function
1
V
+
Supply; must be decoupled to isolate from large transients caused by the
power FET drain. 10
F is recommended close to pins 1 and 4.
2
Input
Turns on power MOSFET when taken above threshold (3.5V typical).
Requires <1
A to switch.
3
Source
Connects to source lead of power FET and is the return for the gate clamp
zener. Can safely swing to 10V when turning off inductive loads.
4
Ground
5
Gate
Drives and clamps the gate of the power FET. Will be clamped to approxi-
mately 0.7V by an internal diode when turning off inductive loads.
6, 7, 8
C2, Com, C1
Optional 1nF capacitors reduce gate turn-on time; C2 has dominant effect.
Absolute Maximum Ratings
(Note 1, 2)
Supply Voltage (V
+
), Pin 1
0.5V to 36V
Input Voltage, Pin 2
10V to V
+
Source Voltage, Pin 3
10V to V
+
Current into Pin 3
50mA
Gate Voltage, Pin 5
1V to 50V
Junction Temperature
150
C
Operating Ratings
(Notes 1, 2)
Power Dissipation
1.25W
JA
(Plastic DIP)
100
C/W
JA
(SOIC)
170
C/W
Ambient Temperature: B version
40
C to +85
C
Storage Temperature
65
C to +150
C
Lead Temperature
260
C
(Soldering, 10 seconds)
Supply Voltage (V
+
), Pin 1
4.75V to 32V high side
4.75V to 15V low side
Pin Configuration
Input
Source
Gate
1
2
3
4
8
MIC5011
7
6
5
V+
Gnd
C1
Com
C2
July 2000
3
MIC5011
MIC5011
Micrel
Electrical Characteristics
(Note 3) Test circuit. T
A
= 55
C to +125
C, V
+
= 15V
, all switches open, unless
otherwise specified.
Parameter
Conditions
Min
Typical
Max
Units
Supply Current, I
1
V
+
= 32V
V
IN
= 0V, S2 closed
0.1
10
A
V
IN
= V
+
= 32V
8
20
mA
V
+
= 5V
V
IN
= 5V, S2 closed
1.6
4
mA
Logic Input Voltage
V
+
= 4.75V
Adjust V
IN
for V
GATE
low
2
V
Adjust V
IN
for V
GATE
high
4.5
V
V
+
= 15V
Adjust V
IN
for V
GATE
high
5.0
V
Logic Input Current, I
2
V
+
= 32V
V
IN
= 0V
1
A
V
IN
= 32V
1
A
Input Capacitance
Pin 2
5
pF
Gate Drive, V
GATE
S1, S2 closed,
V
+
= 4.75V, I
GATE
= 0, V
IN
= 4.5V
7
10
V
V
S
= V+, V
IN
= 5V
V
+
= 15V, I
GATE
= 100
A, V
IN
= 5V
24
27
V
Zener Clamp,
S2 closed, V
IN
= 5V
V
+
= 15V, V
S
= 15V
11
12.5
15
V
V
GATE
V
SOURCE
V
+
= 32V, V
S
= 32V
11
13
16
V
Gate Turn-on Time, t
ON
V
IN
switched from 0 to 5V; measure time
25
50
s
(Note 4)
for V
GATE
to reach 20V
Gate Turn-off Time, t
OFF
V
IN
switched from 5 to 0V; measure time
4
10
s
for V
GATE
to reach 1V
Note 1
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when
operating the device beyond its specified Operating Ratings.
Note 2
The MIC5011 is ESD sensitive.
Note 3
Minimum and maximum Electrical Characteristics are 100% tested at T
A
= 25
C and T
A
= 85
C, and 100% guaranteed over the entire
range. Typicals are characterized at 25
C and represent the most likely parametric norm.
Note 4
Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster--see
Applications Information. Maximum value of switching speed seen at 125
C, units operated at room temperature will reflect the typical
values shown.
Input
Source
Gate
1
2
3
4
8
MIC5011
7
6
5
V+
Gnd
C1
Com
C2
V+
+ 1F
VS
S2
1nF
I5
S1
1nF
1nF
500
1W
V
IN
V
GATE
Test Circuit
MIC5011
Micrel
MIC5011
4
July 2000
0
5
10
15
20
25
30
35
0
2
4
6
8
10
12
Supply Current
SUPPLY VOLTAGE (V)
SUPPLY CURRENT (mA)
0
3
6
9
12
15
SUPPLY VOLTAGE (V)
0
2
4
6
8
10
12
14
VGATE
V+ (V)
DC Gate Voltage
above Supply
0
3
6
9
12
15
0
50
100
150
200
250
300
350
TURN-ON TIME (S)
SUPPLY VOLTAGE (V)
High-side Turn-on Time*
GATE
C =1 nF
0
3
6
9
12
15
0
20
40
60
80
100
120
140
TURN-ON TIME (S)
SUPPLY VOLTAGE (V)
C2=1 nF
High-side Turn-on Time*
GATE
C =1 nF
0
3
6
9
12
15
TURN-ON TIME (mS)
SUPPLY VOLTAGE (V)
High-side Turn-on Time*
GATE
C =10 nF
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
3
6
9
12
15
TURN-ON TIME (mS)
SUPPLY VOLTAGE (V)
C2=1 nF
High-side Turn-on Time*
GATE
C =10 nF
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Typical Characteristics
(Continued)
* Time for gate to reach V
+
+ 5V in test circuit with VS = V
+
5V.
July 2000
5
MIC5011
MIC5011
Micrel
0
3
6
9
12
15
SUPPLY VOLTAGE (V)
GATE
C =10 nF
1
3
10
30
100
300
1000
TURN-ON TIME (S)
GATE
C =1 nF
Low-side Turn-on Time
for Gate = 5V
0
3
6
9
12
15
SUPPLY VOLTAGE (V)
C2=1 nF
GATE
C =10 nF
1
3
10
30
100
300
1000
TURN-ON TIME (S)
GATE
C =1 nF
Low-side Turn-on Time
for Gate = 5V
0
3
6
9
12
15
SUPPLY VOLTAGE (V)
GATE
C =10 nF
TURN-ON TIME (S)
GATE
C =1 nF
Low-side Turn-on Time
for Gate = 10V
3
10
30
100
300
1000
3000
0
3
6
9
12
15
SUPPLY VOLTAGE (V)
GATE
C =10 nF
TURN-ON TIME (S)
GATE
C =1 nF
Low-side Turn-on Time
for Gate = 10V
3
10
30
100
300
1000
3000
C2=1 nF
0
3
6
9
12
15
SUPPLY VOLTAGE (V)
GATE
C =10 nF
TURN-OFF TIME (S)
GATE
C =1 nF
0
10
20
30
40
50
Turn-off Time
0.5
0.75
1.0
1.25
1.5
1.75
2.0
25
0
25
50
75
100 125
DIE TEMPERATURE (C)
NORMALIZED TURN-ON TIME
Turn-on Time
Typical Characteristics
(Continued)
MIC5011
Micrel
MIC5011
6
July 2000
CHARGE-PUMP CURRENT (A)
0
50
100
150
200
250
0
5
10
15
20
25
30
SUPPLY VOLTAGE (V)
Charge Pump
Output Current
V =V
GATE
+
V =V +5V
GATE
+
VS=V 5V
+
CHARGE-PUMP CURRENT (mA)
0
5
10
15
20
25
30
SUPPLY VOLTAGE (V)
Charge Pump
Output Current
V =V
GATE
+
0
0.2
0.4
0.6
0.8
1.0
V =V +5V
GATE
+
VS=V 5V
+
C2=1 nF
Block Diagram
CHARGE
PUMP
LOGIC
MIC5011
Ground
4
6
7
8
500
C1 Com C2
1
V+
5 Gate
3 Source
2
Input
12.5V
Applications Information
Functional Description (Refer to Block Diagram)
The MIC5011 functions are controlled via a logic block
connected to the input pin 2. When the input is low, all
functions are turned off for low standby current and the gate
of the power MOSFET is also held low through 500
to an
N-channel switch. When the input is taken above the turn-
on threshold (3.5V typical), the N-channel switch turns off
and the charge pump is turned on to charge the gate of the
power FET.
The charge pump incorporates a 100kHz oscillator and on-
chip pump capacitors capable of charging 1nF to 5V above
supply in 60
s typical. With the addition of 1nF capacitors
at C1 and C2, the turn-on time is reduced to 25
s typical
(see Figure 3). The charge pump is capable of pumping the
gate up to over twice the supply voltage. For this reason, a
zener clamp (12.5V typical) is provided between the gate
pin 5 and source pin 3 to prevent exceeding the V
GS
rating
of the MOSFET at high supplies.
July 2000
7
MIC5011
MIC5011
Micrel
at ground potential. The MOSFET is forced into conduction,
and it dissipates the energy stored in the load inductance.
The MIC5011 source pin (3) is designed to withstand this
negative excursion without damage. External clamp diodes
are unnecessary.
Low-Side Driver (Figure 2). A key advantage of the low-
side topology is that the load supply is limited only by the
MOSFET BVDSS rating. Clamping may be required to
protect the MOSFET drain terminal from inductive switch-
ing transients. The MIC5011 supply should be limited to
15V in low-side topologies, otherwise a large current will be
forced through the gate clamp zener.
Low-side drivers constructed with the MIC501X family are
also fast; the MOSFET gate is driven to near supply
immediately when commanded ON. Typical circuits achieve
10V enhancement in 10
s or less on a 12 to 15V supply.
Modifying Switching Times (Figure 3). High-side switch-
ing times can be improved by a factor of 2 or more by adding
external charge pump capacitors of 1nF each. In cost-
sensitive applications, omit C1 (C2 has a dominant effect on
speed).
Do not add external capacitors to the MOSFET gate. Add a
resistor (1k
to 51k
) in series with the gate to slow down
the switching time.
Bootstrapped High-Side Driver (Figure 4). The speed of
a high-side driver can be increased to better than 10
s by
bootstrapping the supply off of the MOSFET source. This
topology can be used where the load is pulse-width modu-
lated (100Hz to 20kHz), or where it is energized continu-
ously. The Schottky barrier diode prevents the MIC5011
supply pin from dropping more than 200mV below the drain
supply, and it also improves turn-on time on supplies of less
than 10V. Since the supply current in the "off" state is only
a small leakage, the 100nF bypass capacitor tends to
remain charged for several seconds after the MIC5011 is
turned off. In a PWM application the chip supply is sustained
at a higher potential than the system supply, which im-
proves switching time.
Applications Information
(Continued)
Input
Source
Gate
1
2
3
4
8
MIC5011
7
6
5
V+
Gnd
C1
Com
C2
+
10F
Control Input
IRF531
14.4V
Figure 3. High Side Driver with
External Charge Pump Capacitors
ON
OFF
LOAD
1nF
1nF
Construction Hints
High current pulse circuits demand equipment and assem-
bly techniques that are more stringent than normal, low
current lab practices. The following are the sources of
pitfalls most often encountered during prototyping.
Sup-
plies: many bench power supplies have poor transient
response. Circuits that are being pulse tested, or those that
operate by pulse-width modulation will produce strange
results when used with a supply that has poor ripple
rejection, or a peaked transient response. Always monitor
the power supply voltage that appears at the drain of a high-
side driver (or the supply side of the load in a low-side driver)
with an oscilloscope. It is not uncommon to find bench
power supplies in the 1 kW class that overshoot or under-
shoot by as much as 50% when pulse loaded. Not only will
the load current and voltage measurements be affected, but
it is possible to over-stress various components--espe-
cially electrolytic capacitors--with possibly catastrophic
results. A 10
F supply bypass capacitor at the chip is
recommended.
Residual Resistances: Resistances in circuit connections
may also cause confusing results. For example, a circuit
may employ a 50m
power MOSFET for low drop, but
careless construction techniques could easily add 50 to
100m
resistance. Do not use a socket for the MOSFET. If
the MOSFET is a TO-220 type package, make high-current
drain connections to the tab. Wiring losses have a profound
effect on high-current circuits. A floating millivoltmeter can
identify connections that are contributing excess drop un-
der load.
Circuit Topologies
The MIC5011 is suited for use with standard MOSFETs in
high- or low-side driver applications. In addition, the MIC5011
works well in applications where, for faster switching times,
the supply is bootstrapped from the MOSFET source out-
put. Low voltage, high-side drivers (such as shown in Figure
1) are the slowest; their speed is reflected in the gate turn-
on time specifications. The fastest drivers are the low-side
and bootstrapped high-side types (Figures 2 and 4). Load
current switching times are often much faster than the time
to full gate enhancement, depending on the circuit type, the
MOSFET, and the load. Turn-off times are essentially the
same for all circuits (less than 10
s to V
GS
= 1V). The choice
of one topology over another is based on a combination of
considerations including speed, voltage, and desired sys-
tem characteristics.
High-Side Driver (Figure 1). The high-side topology works
well down to V
+
= 7V with standard MOSFETs. From 4.75
to 7V supply, a logic-level MOSFET can be substituted
since the MIC5011 will not reach 10V gate enhancement
(10V is the maximum rating for logic-compatible MOSFETs).
High-side drivers implemented with MIC501X drivers are
self-protected against inductive switching transients. Dur-
ing turn-off an inductive load will force the MOSFET source
5V or more below ground, while the MIC5011 holds the gate
MIC5011
Micrel
MIC5011
8
July 2000
Applications Information
(Continued)
Input
Source
Gate
1
2
3
4
8
MIC5011
7
6
5
V+
Gnd
C1
Com
C2
IRFP044 (2)
10F
Figure 6. 50-Ampere
Industrial Switch
+
LOAD
24V
330k
100k
OFF
ON
CR2943-NA102A
(GE)
Input
Source
Gate
1
2
3
4
8
MIC5011
7
6
5
V+
Gnd
C1
Com
C2
IRF540
10F
Figure 4. Bootstrapped
High-Side Driver
Control Input
+
LOAD
100nF
1N4001 (2)
1N5817
7 to 15V
Opto-Isolated Interface (Figure 5). Although the MIC5011
has no special input slew rate requirement, the lethargic
transitions provided by an opto-isolator may cause oscilla-
tions on the rise and fall of the output. The circuit shown
accelerates the input transitions from a 4N35 opto-isolator
by adding hysteresis. Opto-isolators are used where the
control circuitry cannot share a common ground with the
MIC5011 and high-current power supply, or where the
control circuitry is located remotely. This implementation is
intrinsically safe; if the control line is severed the MIC5011
will turn OFF.
Industrial Switch (Figure 6). The most common manual
control for industrial loads is a push button on/off switch.
The "on" button is physically arranged in a recess so that in
a panic situation the "off" button, which extends out from the
control box, is more easily pressed. This circuit is compat-
100k
Figure 5. Improved
Opto-Isolator Performance
1k
To MIC5011
Input
100k
4N35
33k
33pF
MPSA05
15V
10mA
Control Input
ible with control boxes such as the CR2943 series (GE).
The circuit is configured so that if both switches close
simultaneously, the "off" button has precedence.
This application also illustrates how two (or more) MOSFETs
can be paralleled. This reduces the switch drop, and distrib-
utes the switch dissipation into multiple packages.
High-Voltage Bootstrap (Figure 7). Although the MIC5011
is limited to operation on 4.75 to 32V supplies, a floating
bootstrap arrangement can be used to build a high-side
switch that operates on much higher voltages. The MIC5011
and MOSFET are configured as a low-side driver, but the
load is connected in series with ground.
Power for the MIC5011 is supplied by a charge pump. A
20kHz square wave (15Vp-p) drives the pump capacitor
and delivers current to a 100
F storage capacitor. A zener
July 2000
9
MIC5011
MIC5011
Micrel
Applications Information
(Continued)
Input
Source
Gate
1
2
3
4
8
MIC5011
7
6
5
V+
Gnd
C1
Com
C2
IRF541
1F
Figure 8. Half-Bridge
Motor Driver
+
100nF
1N4001 (2)
1N5817
15V
220pF
1N4148
22k
M
12V,
10A Stalled
Input
Source
Gate
1
2
3
4
8
MIC5011
7
6
5
V+
Gnd
C1
Com
C2
IRF541
10F
+
1nF
10k
2N3904
22k
15V
PWM
INPUT
Input
Source
Gate
1
2
3
4
8
MIC5011
7
6
5
V+
Gnd
C1
Com
C2
IRFP250
100F
Figure 7. High-Voltage
Bootstrapped Driver
+
90V
M
1nF
15V
1N4003 (2)
1N4003
100k
1k
100k
4N35
33k
33pF
MPSA05
10mA
Control Input
15Vp-p, 20kHz
Squarewave
1N4746
100nF
200V
1/4 HP, 90V
5BPB56HAA100
(GE)
diode limits the supply to 18V. When the MIC5011 is off,
power is supplied by a diode connected to a 15V supply.
The circuit of Figure 5 is put to good use as a barrier
between low voltage control circuitry and the 90V motor
supply.
Half-Bridge Motor Driver (Figure 8). Closed loop control of
motor speed requires a half-bridge driver. This topology
presents an extra challenge since the two output devices
should not cross conduct (shoot-through) when switching.
Cross conduction increases output device power dissipa-
tion. Speed is also important, since PWM control requires
the outputs to switch in the 2 to 20kHz range.
The circuit of Figure 8 utilizes fast configurations for both the
top- and bottom-side drivers. Delay networks at each input
provide a 2 to 3
s dead time effectively eliminating cross
conduction. Two of these circuits can be connected to-
gether to form an H-bridge for locked antiphase or sign/
magnitude control.
MIC5011
Micrel
MIC5011
10
July 2000
Applications Information
(Continued)
Figure 11. Electronic Governor
M
T
100nF
1N4148
Input
Source
Gate
1
2
3
4
8
MIC5011
7
6
5
V+
Gnd
C1
Com
C2
15V
IRF541
10F
+
330k
330k
1k
1nF
15V
Figure 10. Motor Stall
Shutdown
M
T
STOP
RUN
START
12V
100nF
1N4148
Input
Source
Gate
1
2
3
4
8
MIC5011
7
6
5
V+
Gnd
C1
Com
C2
12V
IRFZ44
10F
+
330k
330k
R
Time-Delay Relay (Figure 9). The MIC5011 forms the
basis of a simple time-delay relay. As shown, the delay
commences when power is applied, but the 100k
/1N4148
could be independently driven from an external source such
as a switch or another high-side driver to give a delay
relative to some other event in the system. Hysteresis has
been added to guarantee clean switching at turn-on.
Motor Driver with Stall Shutdown (Figure 10). Tachom-
eter feedback can be used to shut down a motor driver
circuit when a stall condition occurs. The control switch is a
3-way type; the "START" position is momentary and forces
the driver ON. When released, the switch returns to the
"RUN" position, and the tachometer's output is used to hold
the MIC5011 input ON. If the motor slows down, the tach
output is reduced, and the MIC5011 switches OFF. Resis-
tor "R" sets the shutdown threshold.
Electronic Governor (Figure 11). The output of an ac
tachometer can be used to form a PWM loop to maintain the
speed of a motor. The tachometer output is rectified,
partially filtered, and fed back to the input of the MIC5011.
When the motor is stalled there is no tachometer output,
and MIC5011 input is pulled high delivering full power to the
motor. If the motor spins fast enough, the tachometer output
is sufficient to pull the MIC5011 input low, shutting the
output off. Since the rectified waveform is only partially
filtered, the input oscillates around its threshold causing the
MIC5011 to switch on and off at the frequency of the
tachometer signal. A PWM action results since the average
dc voltage at the input decreases as the motor spins faster.
The 1k
potentiometer is used to set the running speed of
the motor. Loop gain (and speed regulation) is increased by
increasing the value of the 100nF filter capacitor.
The performance of such a loop is imprecise, but stable and
inexpensive. A more elaborate loop would consist of a PWM
controller and a half-bridge.
Input
Source
Gate
1
2
3
4
8
MIC5011
7
6
5
V+
Gnd
C1
Com
C2
12V
IRFZ44
10F
Figure 9. 30 Ampere
Time-Delay Relay
+
OUTPUT
(Delay=2.5s)
10k
100
47F
+
100k
1N4148
July 2000
11
MIC5011
MIC5011
Micrel
Applications Information
(Continued)
Gate Control Circuit
When applying the MIC5011, it is helpful to understand the
operation of the gate control circuitry (see Figure 12). The
gate circuitry can be divided into two sections: 1) charge
pump (oscillator, Q1-Q5, and the capacitors) and 2) gate
turn-off switch (Q6).
When the MIC5011 is in the OFF state, the oscillator is
turned off, thereby disabling the charge pump. Q5 is also
turned off, and Q6 is turned on. Q6 holds the gate pin (G) at
ground potential which effectively turns the external MOS-
FET off.
Q6 is turned off when the MIC5011 is commanded on, and
Q5 pulls the gate up to supply (through 2 diodes). Next, the
charge pump begins supplying current to the gate. The gate
accepts charge until the gate-source voltage reaches 12.5V
and is clamped by the zener diode.
A 2-output, three-phase clock switches Q1-Q4, providing a
quasi-tripling action. During the initial phase Q4 and Q2 are
ON. C1 is discharged, and C2 is charged to supply through
Q5. For the second phase Q4 turns off and Q3 turns on,
pushing pin C2 above supply (charge is dumped into the
gate). Q3 also charges C1. On the third phase Q2 turns off
and Q1 turns on, pushing the common point of the two
capacitors above supply. Some of the charge in C1 makes
its way to the gate. The sequence is repeated by turning Q2
and Q4 back on, and Q1 and Q3 off.
In a low-side application operating on a 12 to 15V supply,
the MOSFET is fully enhanced by the action of Q5 alone. On
supplies of more than approximately 14V, current flows
directly from Q5 through the zener diode to ground. To
prevent excessive current flow, the MIC5011 supply should
be limited to 15V in low-side applications.
The action of Q5 makes the MIC5011 operate quickly in
low-side applications. In high-side applications Q5
precharges the MOSFET gate to supply, leaving the charge
pump to carry the gate up to full enhancement 10V above
supply. Bootstrapped high-side drivers are as fast as low-
side drivers since the chip supply is boosted well above the
drain at turn-on.
V
+
C1
C2
COM
500
12.5V
G
S
125pF
125pF
100 kHz
OSCILLATOR
OFF
ON
GATE CLAMP
ZENER
Figure 12. Gate Control
Circuit Detail
Q1
Q4
Q6
Q5
Q3
Q2
C1
C2
MIC5011
Micrel
MIC5011
12
July 2000
Package Information
0.380 (9.65)
0.370 (9.40)
0.135 (3.43)
0.125 (3.18)
PIN 1
DIMENSIONS:
INCH (MM)
0.018 (0.57)
0.100 (2.54)
0.013 (0.330)
0.010 (0.254)
0.300 (7.62)
0.255 (6.48)
0.245 (6.22)
0.380 (9.65)
0.320 (8.13)
0.0375 (0.952)
0.130 (3.30)
8-Pin Plastic DIP (N)
45
0
8
0.244 (6.20)
0.228 (5.79)
0.197 (5.0)
0.189 (4.8)
SEATING
PLANE
0.026 (0.65)
MAX
)
0.010 (0.25)
0.007 (0.18)
0.064 (1.63)
0.045 (1.14)
0.0098 (0.249)
0.0040 (0.102)
0.020 (0.51)
0.013 (0.33)
0.157 (3.99)
0.150 (3.81)
0.050 (1.27)
TYP
PIN 1
DIMENSIONS:
INCHES (MM)
0.050 (1.27)
0.016 (0.40)
8-Pin SOP (M)
MICREL INC.
1849 FORTUNE DRIVE
SAN JOSE, CA 95131
USA
TEL
+ 1 (408) 944-0800
FAX
+ 1 (408) 944-0970
WEB
http://www.micrel.com
This information is believed to be accurate and reliable, however no responsibility is assumed by Micrel for its use nor for any infringement of patents
or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent right of Micrel Inc.
1998 Micrel Incorporated
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