August 1998
6-39
MIC94002
Micrel
6
MIC94002
Dual P-Channel MOSFET
Not Recommended for New Designs
Features
15V minimum drain-to-source breakdown
0.4
maximum on-resistance at
4.5V gate-to-source voltage (each MOSFET)
Functional at 2.7V gate-to-source voltage
0.063" maximum height
Applications
High-side switch
Power management
Stepper motor control
1.8" PCMCIA disk drive V
CC
switch
Ordering Information
Part Number
Temperature Range*
Package
MIC94002BLM
55
C to +150
C
8-lead SOIC
* Operating Junction Temperature
Low Profile Leads, see Package Information
Package Information
45
3
6
0.244 (6.20)
0.228 (5.80)
0.197 (5.0)
0.189 (4.8)
0.063 (1.60) MAX
SEATING
PLANE
0.026 (0.65)
MAX
)
0.016 (0.40)
TYP
0.154 (3.90)
0.057 (1.45)
0.049 (1.25)
0.193 (4.90)
0.050 (1.27)
TYP
Pin 1
Typical Application
Load 1
+5V
On
Off
74HC04
On
Off
1/2 MIC94002
1/2 MIC94002
G1
G2
D1
D2
S
S
common source
Load 2
Dual Power Switch Application
General Description
The MIC94002 contains two silicon gate P-channel MOSFETs
designed for low on-resistance, high-side switch applica-
tions.
The MIC94002 has a maximum on-resistance of 0.4
at 4.5V
gate-to-source voltage. On-resistance can also be reduced
to half by connecting both MOSFETs in parallel.
Improved ESD protection is provided by the gate protection
network shown in the schematic diagram.
The MIC94002 is supplied in a low-profile version of the
8-lead SOIC package.
The MIC94002 can be assembled with the body not shorted
to the sources for use in analog switch applications. Contact
the factory for more information.
1
2
3
4
8
7
6
5
D1
D1
D2
D2
S
G1
S
G2
8-lead Low-Profile
SOIC Package (LM)
Pin Configuration
Schematic Information
Schematic Symbols
Gate 1
Source
Drain 1
Drain 2
Gate 2
Schematic Diagram
G1
S
G2
D1
D2
S
Patent 5,355,008
MIC94002
Micrel
6-40
August 1998
Electrical Characteristics
Note 1
T
A
= 25
C unless noted.
All values are negative. Signs not shown for clarity.
Symbol
Parameter
Condition
Min
Typ
Max
Units
V
BDSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
A
15
V
V
GS
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
1
3
V
I
GSS
Gate-Body Leakage
V
DS
= 0V, V
GS
= 15V, Note 3
100
nA
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 15V, V
GS
= 0V
25
A
V
DS
= 15V, V
GS
= 0V, T
J
= 125
C
250
A
I
D(ON)
On-State Drain Current
V
DS
10V, V
GS
= 10V, Note 2
5.5
A
R
DS(ON)
Drain-Source On-State Resist.
V
GS
= 4.5V, I
D
= 50mA
0.35
0.40
g
FS
Forward Transconductance
V
DS
= 15V, I
D
= 1A, Note 2
0.7
S
Note 1
Values for each MOSFET
Note 2
Pulse Test: Pulse Width
300
s, Duty Cycle
2%
Note 3
ESD gate protection diode conducts during positive gate-to-source voltage excursions.
Absolute Maximum Ratings
Voltage and current values are negative. Signs not shown for clarity.
Drain-to-Source Voltage ................................................ 15V
Gate-to-Source Voltage ................................................ 15V
Continuous Drain Current (each MOSFET, both on)
T
A
= 25
C ................................................................. 1.2A
T
A
= 100
C ............................................................... 0.7A
Operating Juction Temperature ................. 55
C to +150
Storage Temperature ............................... 55
C to +150
C
Total Power Dissipation
T
A
= 25
C ................................................................... 1W
T
A
= 100
C .............................................................. 0.4W
Thermal Resistance
JA ......................................................................................
125
C/W
JC ........................................................................................
76
C/W
Lead Temperature
1/16
" from case, 10s ........................................... +300
C
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.0
0.4
0.8
1.2
1.6
2.0
R
DS(ON)
(
)
I
D
(A)
On Resistance vs.
Drain Current
V
GS
= 4.5V
V
GS
= 10V
Notes 1, 2
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0.0
2.5
5.0
7.5 10.0 12.5 15.0
I
D
(mA)
V
DS
(V)
Drain Characteristics
V
GS
= 4.0
V
GS
= 3.5
V
GS
= 3.0
V
GS
= 2.5
V
GS
= 2.0
V
GS
= 1.5
Notes 1, 2
Typical Characteristics
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