2001 Microchip Technology Inc.
DS21231C-page 1
M
25AA160/25LC160/25C160
DEVICE SELECTION TABLE
FEATURES
Low power CMOS technology
- Write current: 3 mA maximum
- Read current: 500
A typical
- Standby current: 500 nA typical
2048 x 8-bit organization
16 byte page
Write cycle time: 5 ms max.
Self-timed ERASE and WRITE cycles
Block write protection
- Protect none, 1/4, 1/2 or all of array
Built-in write protection
- Power on/off data protection circuitry
- Write enable latch
- Write protect pin
Sequential read
High reliability
- Endurance: 1 M cycles
- Data retention: > 200 years
- ESD protection: > 4000V
8-pin PDIP and SOIC packages
Temperature ranges supported:
DESCRIPTION
The Microchip Technology Inc. 25AA160/25LC160/
25C160 (25XX160
*
) are 16 Kbit Serial Electrically
Erasable PROMs. The memory is accessed via a sim-
ple Serial Peripheral InterfaceTM (SPITM) compatible
serial bus. The bus signals required are a clock input
(SCK) plus separate data in (SI) and data out (SO)
lines. Access to the device is controlled through a chip
select (CS) input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
chip select, allowing the host to service higher priority
interrupts.
PACKAGE TYPES
BLOCK DIAGRAM
Part
Number
V
CC
Range
Max Clock
Frequency
Temp
Ranges
25AA160
1.8 - 5.5V
1 MHz
I
25LC160
2.5 - 5.5V
2 MHz
I
25C160
4.5 - 5.5V
3 MHz
I,E
- Industrial (I):
-40
C to +85
C
- Automotive (E) (25C160):
-40C to +125C
25XX
160
CS
SO
WP
V
SS
1
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
PDIP/SOIC
SI
SO
SCK
CS
HOLD
WP
Status
Register
I/O Control
Memory
Control
Logic
X
Dec
HV Generator
EEPROM
Array
Page Latches
Y Decoder
Sense Amp.
R/W Control
Logic
V
CC
V
SS
16K SPI
TM
Bus Serial EEPROM
*25XX160 is used in this document as a generic part number for the 25AA160/25LC160/25C160 devices.
SPITM is a trademark of Motorola Inc.
25AA160/25LC160/25C160
DS21231C-page 2
2001 Microchip Technology Inc.
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
V
CC
.............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. V
SS
.......................................................................................................... -0.6V to V
CC
+1.0V
Storage temperature .................................................................................................................................-65C to 150C
Ambient temperature under bias ...............................................................................................................-65C to 125C
Soldering temperature of leads (10 seconds) ....................................................................................................... +300C
ESD protection on all pins ......................................................................................................................................... 4 KV
1.1
DC Characteristics
NOTICE: Stresses above those listed under `Maximum ratings' may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at those or any other conditions above those indicated in
the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended
period of time may affect device reliability.
DC Characteristics
Industrial (I):
T
AMB
= -40C to +85C V
CC
= 1.8V to 5.5V
Automotive (E):T
AMB
= -40C to +125C V
CC
= 4.5V to 5.5V (25C160 only)
Param.
No.
Sym.
Characteristics
Min.
Max.
Units
Conditions
D1
V
IH
1
High level input voltage
2.0
V
CC
+1
V
V
CC
2.7V (Note)
D2
V
IH
2
0.7 V
CC
V
CC
+1
V
V
CC
< 2.7V (Note)
D3
V
IL
1
Low level input voltage
-0.3
0.8
V
V
CC
2.7V (Note)
D4
V
IL
2
-0.3
0.3 V
CC
V
V
CC
< 2.7V (Note)
D5
V
OL
Low level output voltage
--
0.4
V
I
OL
= 2.1 mA
D6
V
OL
--
0.2
V
I
OL
= 1.0 mA, V
CC
< 2.5V
D7
V
OH
High level output
voltage
V
CC
-0.5
--
V
I
OH
= -400
A
D8
I
LI
Input leakage current
-10
10
A
CS = V
CC
, V
IN
= V
SS
TO
V
CC
D9
I
LO
Output leakage current
-10
10
A
CS = V
CC
, V
OUT
= V
SS
TO
V
CC
D10
C
INT
Internal Capacitance
(all inputs and outputs)
--
7
pF
T
AMB
= 25C, CLK = 1.0 MHz,
V
CC
= 5.0V (Note)
D11
I
CC
Read
Operating Current
--
--
1
500
mA
A
V
CC
= 5.5V; F
CLK
= 3.0 MHz; SO = Open
V
CC
= 2.5V; F
CLK
= 2.0 MHz; SO = Open
D12
I
CC
Write
--
--
5
3
mA
mA
V
CC
= 5.5V
V
CC
= 2.5V
D13
I
CCS
Standby Current
--
--
5
1
A
A
CS = V
CC
= 5.5V, Inputs tied to V
CC
or V
SS
CS = V
CC
= 2.5V, Inputs tied to V
CC
or V
SS
Note:
This parameter is periodically sampled and not 100% tested.
2001 Microchip Technology Inc.
DS21231C-page 3
25AA160/25LC160/25C160
1.2
AC Characteristics
AC Characteristics
Industrial (I):
T
AMB
= -40C to +85C
V
CC
= 1.8V to 5.5V
Automotive (E): T
AMB
= -40C to +125C
V
CC
= 4.5V to 5.5V (25C160 only)
Param.
No.
Sym.
Characteristic
Min.
Max.
Units
Conditions
1
F
CLK
Clock Frequency
--
--
--
3
2
1
MHz
MHz
MHz
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
2
T
CSS
CS Setup Time
100
250
500
--
--
--
ns
ns
ns
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
3
T
CSH
CS Hold Time
150
250
475
--
--
--
ns
ns
ns
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
4
T
CSD
CS Disable Time
500
--
ns
--
5
T
SU
Data Setup Time
30
50
50
--
--
--
ns
ns
ns
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
6
T
HD
Data Hold Time
50
100
100
--
--
--
ns
ns
ns
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
7
T
R
CLK Rise Time
--
2
s
(Note 1)
8
T
F
CLK Fall Time
--
2
s
(Note 1)
9
T
HI
Clock High Time
150
230
475
--
--
--
ns
ns
ns
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
10
T
LO
Clock Low Time
150
230
475
--
--
--
ns
ns
ns
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
11
T
CLD
Clock Delay Time
50
--
ns
--
12
T
CLE
Clock Enable Time
50
--
ns
--
13
T
V
Output Valid from Clock
Low
--
--
--
150
230
475
ns
ns
ns
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
14
T
HO
Output Hold Time
0
--
ns
(Note 1)
15
T
DIS
Output Disable Time
--
--
--
200
250
500
ns
ns
ns
V
CC
= 4.5V to 5.5V (Note 1)
V
CC
= 2.5V to 4.5V (Note 1)
V
CC
= 1.8V to 2.5V (Note 1)
16
T
HS
HOLD Setup Time
100
100
200
--
--
--
ns
ns
ns
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
17
T
HH
HOLD Hold Time
100
100
200
--
--
--
ns
ns
ns
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
18
T
HZ
HOLD Low to Output High-Z
100
150
200
--
--
--
ns
ns
ns
V
CC
= 4.5V to 5.5V (Note 1)
V
CC
= 2.5V to 4.5V (Note 1)
V
CC
= 1.8V to 2.5V (Note 1)
19
T
HV
HOLD High to Output Valid
100
150
200
--
--
--
ns
ns
ns
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
20
T
WC
Internal Write Cycle Time
--
5
ms
--
21
--
Endurance
1 M
--
E/W
Cycles
(Note 2)
Note
1: This parameter is periodically sampled and not 100% tested.
2: This parameter is not tested but ensured by characterization. For endurance estimates in a specific application, please
consult the Total Endurance Model which can be obtained on our website: www.microchip.com.
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