1998 Microchip Technology Inc.

DS11125I-page 1

FEATURES

· Fast Read Access Time--150 ns
· CMOS Technology for Low Power Dissipation

- 30 mA Active
- 100

A Standby

· Fast Byte Write Time--200

s or 1 ms

· Data Retention >200 years
· High Endurance - Minimum 10

Erase/Write Cycles

· Automatic Write Operation

- Internal Control Timer
- Auto-Clear Before Write Operation
- On-Chip Address and Data Latches

· Data polling
· Chip Clear Operation
· Enhanced Data Protection

- V

Detector

- Pulse Filter
- Write Inhibit

· Electronic Signature for Device Identification
· 5-Volt-Only Operation
· Organized 2Kx8 JEDEC Standard Pinout
· 24-pin Dual-In-Line Package
· 32-pin PLCC Package
· Available for Extended Temperature Ranges:

- Commercial: 0°C to +70°C
- Industrial: -40°C to +85°C

DESCRIPTION

The Microchip Technology Inc. 28C16A is a CMOS 16K
non-volatile electrically Erasable PROM. The 28C16A
is accessed like a static RAM for the read or write
cycles without the need of external components. Dur-
ing a "byte write", the address and data are latched
internally, freeing the microprocessor address and data
bus for other operations. Following the initiation of write
cycle, the device will go to a busy state and automati-
cally clear and write the latched data using an internal
control timer. To determine when a write cycle is com-
plete, the 28C16A uses Data polling. Data polling
allows the user to read the location last written to when
the write operation is complete. CMOS design and pro-
cessing enables this part to be used in systems where
reduced power consumption and reliability are
required. A complete family of packages is offered to
provide the utmost flexibility in applications.

PACKAGE TYPES

BLOCK DIAGRAM

· Pin 1 indicator on PLCC on top of package

A6
A5
A4
A3
A2
A1
A0

I/O0

A8
A9
NC
NC
OE
A10
CE
I/O7
I/O6

Vcc

I/O1

I/O2

Vss

I/O3

I/O4

I/O5

· 1

I/O0

I/O1

I/O2

Vcc

A10

I/O7

I/O6

I/O5

I/O4

I/O3

DIP

PLCC

I/O0

I/O7

Input/Output

Buffers

Chip Enable/

Output Enable

Control Logic

Data Protection

Circuitry

A10

Y Gating

16K bit

Cell Matrix

Decoder

Data

Poll

Auto Erase/Write

Timing

L
a

c
h
e
s

Program Voltage

Generation

28C16A

16K (2K x 8) CMOS EEPROM

28C16A

DS11125I-page 2

1998 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

1.1

MAXIMUM RATINGS*

and input voltages w.r.t. V

....... -0.6V to + 6.25V

Voltage on OE w.r.t. V

...................... -0.6V to +13.5V

Voltage on A9 w.r.t. V

....................... -0.6V to +13.5V

Output Voltage w.r.t. V

..................-0.6V to V

+0.6V

Storage temperature .......................... -65°C to +125°C

Ambient temp. with power applied........ -50°C to +95°C

*Notice:

Stresses above those listed under "Maximum Ratings"

may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at those or any
other conditions above those indicated in the operation listings of
this specification is not implied. Exposure to maximum rating con-
ditions for extended periods may affect device reliability.

TABLE 1-1:

PIN FUNCTION TABLE

Name

Function

A0 - A10

Address Inputs

Chip Enable

Output Enable

Write Enable

I/O0 - I/O7

Data Inputs/Outputs

+5V Power Supply

Ground

No Connect; No Internal Connection

Not Used; No External Connection is
Allowed

TABLE 1-2:

READ/WRITE OPERATION DC CHARACTERISTICS

= +5V

10%

Commercial (C): Tamb = 0°C

to +70°C

Industrial (I): Tamb = -40°C

to +85°C

Parameter

Status

Symbol

Min

Max

Units

Conditions

Input Voltages

Logic `1'

Logic `0;

2.0

-0.1

0.8

V
V

Input Leakage

-10

= -0.1V to V

Input Capacitance

= 0V; Tamb = 25°C;

f = 1 MHz

Output Voltages

Logic `1'
Logic `0'

2.4

0.45

V
V

= -400

= 2.1 mA

Output Leakage

-10

OUT

= -0.1V to V

+0.1V

Output Capacitance

OUT

= 0V; Tamb = 25°C;

f = 1 MHz

Power Supply Current,
Active

TTL input

f = 5 MHz (Note 1)
V

= 5.5V;

Power Supply Current,
Standby

TTL input
TTL input

CMOS input

(

)

TTL

(

)

TTL

(

)

CMOS

2
3

100

mA
mA

CE = V

(0°C to +70°C)

CE = V

(-40°C to +85°C)

CE = V

-0.3 to V

OE = V

Other inputs equal V

or V

Note 1: AC power supply current above 5 MHz; 1 mA/MHz.

1998 Microchip Technology Inc.

DS11125I-page 3

28C16A

TABLE 1-3:

READ OPERATION AC CHARACTERISTICS

FIGURE 1-1:

READ WAVEFORMS

AC Testing Waveform:

= 2.4V; V

= 0.45V; V

= 2.0V; Vol = 0.8V

Output Load:

1 TTL Load + 100pF

Input Rise and Fall Times: 20 ns
Ambient Temperature:

Commercial (C): Tamb =

0°C to +70°0°C

Industrial (I):

Tamb =

-40°C to +85°C

Parameter

Sym

28C16A-15

28C16A-20

28C16A-25

Units

Conditions

Min

Max

Min

Max

Min

Max

Address to Output Delay

ACC

150

200

250

OE = CE = V

CE to Output Delay

150

200

250

OE = V

OE to Output Delay

100

CE = V

CE or OE High to Output Float

OFF

Output Hold from CE or OE,
whichever occurs first

Endurance

cycles 25°C, Vcc =

5.0V, Block
Mode (Note)

Note: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific appli-

cation, please consult the Total Endurance Model which can be obtained on our BBS or website.

Address

Data

Address Valid

High Z

Valid Output

ACC

(1) t

OFF

is specified for OE or CE, whichever occurs first

(2) OE may be delayed up to t

- t

after the falling edge of CE without impact on t

(3) This parameter is sampled and is not 100% tested

High Z

OFF(1,3)

Notes:

OE(2)

CE(2)

28C16A

DS11125I-page 4

1998 Microchip Technology Inc.

TABLE 1-4:

BYTE WRITE AC CHARACTERISTICS

FIGURE 1-2:

PROGRAMMING WAVEFORMS

AC Testing Waveform:

= 2.4V and V

= 0.45V; V

= 2.0V; V

= 0.8V

Output Load:

1 TTL Load + 100 pF

Input Rise/Fall Times:

20 ns

Ambient Temperature:

Commercial (C):

Tamb

0°C to +70°C

Industrial (I):

Tamb

-40°C to +85°C

Parameter

Symbol

Min

Max

Units

Remarks

Address Set-Up Time

Address Hold Time

Data Set-Up Time

Data Hold Time

Write Pulse Width

WPL

100

Note 1

Write Pulse High Time

WPH

OE Hold Time

OEH

OE Set-Up Time

OES

Data Valid Time

1000

Note 2

Write Cycle Time (28C16A)

0.5 ms typical

Write Cycle Time (28C16AF)

200

100

s typical

Note 1: A write cycle can be initiated be CE or WE going low, whichever occurs last. The data is latched on the pos-

itive edge of CE or WE, whichever occurs first.

2: Data must be valid within 1000ns max. after a write cycle is initiated and must be stable at least until t

after the positive edge of WE or CE, whichever occurs first.

WPL

OES

OEH

Address

CE, WE

Data In

1998 Microchip Technology Inc.

DS11125I-page 5

28C16A

FIGURE 1-3:

DATA POLLING WAVEFORMS

FIGURE 1-4:

CHIP CLEAR WAVEFORMS

TABLE 1-5:

SUPPLEMENTARY CONTROL

Mode

I/O

Chip Clear

Extra Row Read

A9 = V

Data Out

Extra Row Write

A9 = V

Data In

Note 1: V

= 12.0V

0.5V * Pulsed per programming waveforms.

Address Valid

Last Written

Address Valid

ACC

WPL

WPH

True Data Out

Data In

Valid

Data

Address

I/O7 Out

= = 1

= 10ms

= 12.0V

0.5V

Document Outline

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: 28C16AF-15

Document Outline

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: 28C16AF-15