2002 Microchip Technology Inc.
DS21366B-page 1
M
TC1219/TC1220
Features
Charge Pumps in 6-Pin SOT-23A Package
>95% Voltage Conversion Efficiency
Voltage Inversion and/or Doubling
Operates from +2.5V to +5.5V
Up to 25mA Output Current
Only Two External Capacitors Required
Low Power Consumption
Power-Saving Shutdown Mode
TC1220 Compatible with 1.8V Logic Systems
Applications
LCD Panel Bias
Cellular Phones
Pagers
PDAs, Portable Dataloggers
Battery-Powered Devices
Device Selection Table
Package Type
General Description
The TC1219/TC1220 are CMOS "charge-pump"
voltage converters in ultra-small 6-Pin SOT-23A
packages. They invert and/or double an input voltage
which can range from +2.5V to +5.5V. Conversion
efficiency is typically >95%. Switching frequency is
12kHz for the TC1219, 35kHz for the TC1220. When
the shutdown pin is held at a logic low, the device goes
into a very low power mode of operation, consuming
less than 1
A of supply current.
External component requirement is only two capacitors
for standard voltage inverter applications. With a few
additional components a positive doubler can also be
built. All other circuitry, including control, oscillator,
power MOSFETs are integrated on-chip. Typical supply
currents are 60
A (TC1219), 115
A (TC1220).
All devices are available in 6-pin SOT-23A surface
mount packages.
Functional Block Diagram
Part
Number
Package
Osc.
Freq.
(kHz)
Operating
Temp.
Range
TC1219ECH 6-Pin SOT-23A
12
-40C to +85C
TC1220ECH 6-Pin SOT-23A
35
-40C to +85C
C+
C
TC1219ECH
TC1220ECH
1
2
3
5
4
V
IN
SHDN
GND
6-Pin SOT-23A
NOTE: 6-Pin SOT-23A is equivalent to the EIAJ SC-74
OUT
6
TC1219
TC1220
V
IN
V
Output
C+
C
C1
C2
Input
GND
OUT
SHDN
ON
OFF
+
+
Negative Voltage Inverter
Switched Capacitor Voltage Converters with Shutdown in SOT Packages
TC1219/TC1220
DS21366B-page 2
2002 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage (V
IN
to GND)....................... +6.0V, -0.3V
Output Voltage (OUT to GND).................. -6.0V, +0.3V
Current at OUT Pin..............................................50mA
Short-Circuit Duration OUT to GND ............Indefinite
Power Dissipation (T
A
70C)
6-Pin SOT-23A .........................................240mW
Operating Temperature Range............. -40C to +85C
Storage Temperature (Unbiased) .......-65C to +150C
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1219/TC1220 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: T
A
= -40C to +85C, V
IN
= +5V, C1 = C2 = 10
F, (TC1219), C1 = C2 = 3.3
F (TC1220), T
A
= 25C
unless otherwise noted.
Symbol
Parameter
Min
Typ
Max
Units
Device
Test Conditions
I
DD
Supply Current
--
--
60
115
115
325
A
TC1219
TC1220
I
SHDN
Shutdown Supply Current
--
0.1
1.0
A
SHDN = GND, V
IN
= 5V (Note 2)
V
MIN
Minimum Supply Voltage
2.5
--
--
V
R
LOAD
= 1k
V
MAX
Maximum Supply Voltage
--
--
5.5
V
R
LOAD
= 1k
F
OSC
Oscillator Frequency
6
19
12
35
20
56.3
kHz
TC1219
TC1220
V
IH
SHDN Input Logic High
--
1.5
1.8
1.5
--
--
--
--
--
--
--
--
V
TC1219
TC1220
R
LOAD
=
V
IN
= V
MIN
to 3V
V
IN
= >3V to V
MAX
V
IN
= V
MIN
to V
MAX
V
IL
SHDN Input Logic Low
--
--
0.5
V
V
IN
= V
MIN
to V
MAX
P
EFF
Power Efficiency
--
--
96
95
--
--
%
R
LOAD
= 1k
V
EFF
Voltage Conversion Efficiency
95
99.9
--
%
R
LOAD
=
R
OUT
Output Resistance
--
25
65
TC1219/TC1220
I
LOAD
= 0.5mA to 25mA (Note 1)
Note
1:
Capacitor contribution is approximately 20% of the output impedance [ESR = 1/ pump frequency x capacitance].
2:
V
IN
is guaranteed to be disconnected from OUT when the converter is in shutdown..
2002 Microchip Technology Inc.
DS21366B-page 3
TC1219/TC1220
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
PIN FUNCTION TABLE
Pin No.
(6-Pin SOT-23A)
Symbol
Description
1
OUT
Inverting charge pump output.
2
V
IN
Positive power supply input.
3
C
Commutation capacitor negative terminal.
4
GND
Ground.
5
SHDN
Shutdown input (active low).
6
C
+
Commutation capacitor positive terminal.
TC1219/TC1220
DS21366B-page 4
2002 Microchip Technology Inc.
3.0
DETAILED DESCRIPTION
The TC1219/TC1220 charge pump converters invert
the voltage applied to the V
IN
pin. Conversion consists
of a two-phase operation (Figure 3-1). During the first
phase, switches S2 and S4 are opened and S1 and S3
are closed. During this time, C1 charges to the voltage
on V
IN
and load current is supplied from C2. During the
second phase, S2 and S4 are closed, and S1 and S3
are opened. This action connects C1 across C2,
restoring charge to C2.
FIGURE 3-1:
IDEAL SWITCHED
CAPACITOR CHARGE
PUMP
V
OUT
= (V
IN
)
C1
C2
TC1219/1220
Phase 1
V
IN
S1
S3
S4
S2
OSC
2002 Microchip Technology Inc.
DS21366B-page 5
TC1219/TC1220
4.0
APPLICATIONS INFORMATION
4.1
Output Voltage Considerations
The TC1219/TC1220 perform voltage conversion but
do not provide regulation. The output voltage will droop
in a linear manner with respect to load current. The
value of this equivalent output resistance is approxi-
mately 25
nominal at +25C and V
IN
= +5V. V
OUT
is
approximately -5V at light loads, and droops according
to the equation below:
V
DROP
= I
OUT
x R
OUT
V
OUT
= (V
IN
V
DROP
)
4.2
Charge Pump Efficiency
The overall power efficiency of the charge pump is
affected by four factors:
1.
Losses from power consumed by the internal
oscillator, switch drive, etc. (which vary with
input voltage, temperature and oscillator
frequency).
2.
I
2
R losses due to the on-resistance of the
MOSFET switches on-board the charge pump.
3.
Charge pump capacitor losses due to effective
series resistance (ESR).
4.
Losses that occur during charge transfer (from
the commutation capacitor to the output
capacitor) when a voltage difference between
the two capacitors exists.
Most of the conversion losses are due to factors (2) and
(3) above. These losses are given by Equation 4-1(b).
EQUATION 4-1:
The 1/(f
OSC
)(C1) term in Equation 4-1(b) is the
effective output resistance of an ideal switched
capacitor circuit (Figure 4-1 and Figure 4-2). The value
of R
SWITCH
can be approximated at 0.5
for the
TC1219/TC1220.
The remaining losses in the circuit are due to factor (4)
above, and are shown in Equation 4-2. The output
voltage ripple is given by Equation 4-3.
EQUATION 4-2:
EQUATION 4-3:
FIGURE 4-1:
IDEAL SWITCHED
CAPACITOR MODEL
FIGURE 4-2:
EQUIVALENT OUTPUT
RESISTANCE
a) P
LOSS
(2, 3)
= I
OUT
2
x R
OUT
b) where R
OUT
=
[
1 / [f
OSC
(C1) ] + 8R
SWITCH
+
4ESR
C
1
+ ESR
C
2
]
P
LOSS(4)
=
[
(0.5)(C1) (V
IN
2
V
OUT
2
) + (0.5)
(C
2
) (V
RIPPLE
2
2V
OUT
V
RIPPLE
)
]
x f
OSC
V
RIPPLE
= [ I
OUT
/ 2 x ( f
OSC
) (C2) ] + 2 ( I
OUT
) (ESR
C2
)
V+
V
OUT
R
L
C2
C1
f
V+
V
OUT
R
EQUIV
R
EQUIV
=
R
L
C2
f x C1
1
TC1219/TC1220
DS21366B-page 6
2002 Microchip Technology Inc.
4.3
Capacitor Selection
In order to maintain the lowest output resistance and
output ripple voltage, it is recommended that low ESR
capacitors be used. Additionally, larger values of C1
will lower the output resistance and larger values of
C2 will reduce output ripple. (Equation 4-1(b) and
Equation 4-3).
Table 4-1 shows various values of C1 and the
corresponding output resistance values @ +25C. It
assumes a 0.1
ESR
C1
and 2
R
SWITCH
. Table 4-2
shows the output voltage ripple for various values of
C2. The V
RIPPLE
values assume 10mA output load
current and 0.1
ESR
C2
.
TABLE 4-1:
OUTPUT RESISTANCE VS.
C1 (ESR = 0.1
)
TABLE 4-2:
OUTPUT VOLTAGE RIPPLE
VS. C2 (ESR = 0.1
)
I
OUT
10mA
4.4
Input Supply Bypassing
The V
IN
input should be capacitively bypassed to
reduce AC impedance and minimize noise effects due
to the internal switching of the device The
recommended capacitor depends on the configuration
of the TC1219/TC1220.
4.5
Shutdown Input
The TC1219/TC1220 is enabled when SHDN is high,
and disabled when SHDN is low. This input cannot be
allowed to float. (If SHDN is not required, see the
TCM828/829 data sheet.) The SHDN input can be only
driven to 0.5V above V
IN
to avoid significant current
flows.
4.6
Voltage Inverter
The most common application for charge pump
devices is the inverter (Figure 4-3). This application
uses two external capacitors: C1 and C2 (plus a power
supply bypass capacitor, if necessary). The output is
equal to -V
IN
plus any voltage drops due to loading.
Refer to Table 4-1 and Table 4-2 for capacitor
selection.
FIGURE 4-3:
VOLTAGE INVERTER
TEST CIRCUIT
C1 (
F)
TC1219
R
OUT
(
)
TC1220
R
OUT
(
)
1
100
45
3.3
42
25
10
25
19.4
30
19.3
17.5
C2 (
F)
TC1219
V
RIPPLE
(mV)
TC1220
V
RIPPLE
(mV)
1
419
145
3.3
128
45
10
44
16
30
16
7
3
2
4
5
1
C3
C1
C2
V
IN
V
OUT
R
L
TC1219
TC1220
C1
IN
OUT
C1+
GND
Device
C1
C2
C3
TC1219 10
F 10F 10F
TC1220 3.3
F 3.3F 3.3F
SHDN
6
+
+
+
2002 Microchip Technology Inc.
DS21366B-page 7
TC1219/TC1220
4.7
Cascading Devices
Two or more TC1219/TC1220 can be cascaded to
increase output voltage (Figure 4-4). If the output is
lightly loaded, it will be close to (-2 x V
IN
) but will droop
at least by R
OUT
of the first device multiplied by the I
Q
of the second. It can be seen that the output resistance
rises rapidly for multiple cascaded devices.
4.8
Paralleling Devices
To reduce the value of R
OUT
, multiple TC1219/
TC1220's can be connected in parallel (Figure 4-5).
The output resistance will be reduced by a factor of N
where N is the number of TC1219/TC1220. Each
device will require its own pump capacitor (C1), but all
devices may share one reservoir capacitor (C2).
However, to preserve ripple performance the value of
C2 should be scaled according to the number of
paralleled TC1219/TC1220.
FIGURE 4-4:
CASCADING MULTIPLE DEVICES TO INCREASE OUTPUT VOLTAGE
FIGURE 4-5:
PARALLELING MULTIPLE DEVICES TO REDUCE OUTPUT RESISTANCE
C1
C1
C2
6
6
4
3
4
1
2
2
1
3
C2
V
IN
V
OUT
V
OUT
= -nV
IN
TC1219
TC1220
TC1219
TC1220
. . .
. . .
SHDN
SHDN
V
IN
5
5
"1"
"n"
+
+
+
+
C1
C1
6
5
4
3
4
1
2
2
1
3
C2
V
OUT
V
OUT
= -V
IN
R
OUT
= R
OUT
OF SINGLE DEVICE
V
IN
NUMBER OF DEVICES
TC1219
TC1220
TC1219
TC1220
. . .
. . .
SHDN
SHDN
Shutdown
Control
5
6
V
IN
+
+
+
"1"
"n"
TC1219/TC1220
DS21366B-page 8
2002 Microchip Technology Inc.
4.9
Voltage Doubler/Inverter
Another common application of the TC1219/TC1220 is
shown in Figure 4-6. This circuit performs two functions
in combination. C1 and C2 form the standard inverter
circuit described previously. C3 and C4 plus the two
diodes form the voltage doubler circuit. C1 and C3 are
the pump capacitors and C2 and C4 are the reservoir
capacitors. Because both sub-circuits rely on the same
switches if either output is loaded, both will droop
toward GND. Make sure that the total current drawn
from both the outputs does not total more than 40mA.
4.10
Diode Protection for Heavy Loads
When heavy loads require the OUT pin to sink large
currents being delivered by a positive source, diode
protection may be needed. The OUT pin should not be
allowed to be pulled above ground. This is
accomplished by connecting a Schottky diode
(1N5817) as shown in Figure 4-7.
4.11
Layout Considerations
As with any switching power supply circuit good layout
practice is recommended. Mount components as close
together as possible to minimize stray inductance and
capacitance. Noise leakage into other circuitry can be
minimized with the use of a large ground plane.
FIGURE 4-6:
COMBINED DOUBLER AND INVERTER
FIGURE 4-7:
HIGH V LOAD CURRENT
C1
D1
D2
D1, D2 = 1N4148
6
4
1
2
3
C2
C4
C3
V
IN
V
OUT
= -V
IN
V
OUT
= (2V
IN
)
(V
FD1
) (V
FD2
)
TC1219
TC1220
Shutdown
Control
5
+
+
+
+
TC1219
TC1220
GND
OUT
4
1
2002 Microchip Technology Inc.
DS21366B-page 9
TC1219/TC1220
5.0
TYPICAL CHARACTERISTICS
Circuit of Figure 4-3, V
IN
= +5V, C1 = C2 = C3, T
A
= 25C unless otherwise noted.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
60
55
50
45
40
0
30
25
20
15
35
10
5
2.5
3.5
4.5
5.5
SUPPLY VOLTAGE (V)
Output Resistance
vs. Supply Voltage
65
OUTPUT RESISTANCE (
)
TC1220
TC1219
CAPACITANCE (
F)
TC1220
Output Current vs. Capacitance
60
55
50
45
40
25
20
15
35
30
-40
-20
0
20
40
60
80
TEMPERATURE (
C)
TC1219 Output Resistance
vs. Temperature
65
OUTPUT RESISTANCE (
)
V
IN
= 3.3V
V
IN
= 5.0V
40
35
30
25
20
5
0
15
10
0
10
5
15
25
20
30
45
V
IN
= 4.75V, V
OUT
= -4.0V
V
IN
= 3.15V, V
OUT
= -2.5V
TC1219
Output Current vs. Capacitance
CAPACITANCE (
F)
O
UTPUT CURRENT
(
mA
)
0
10
5
15
20
25
30
CAPACITANCE (
F)
TC1220
Output Voltage Ripple vs. Capacitance
450
400
350
300
250
50
0
200
150
100
0
10
5
25
20
25
30
CAPACITANCE (
F)
TC1219
Output Voltage Ripple vs. Capacitance
500
450
400
350
300
250
50
0
200
150
100
500
OUTPUT VOLTAGE RIPPLE (mVp-p)
O
UTPUT VOLTAGE RIPPLE
(
mVp-p
)
40
35
30
25
20
5
0
15
10
0
10
5
15
25
20
30 35 40 45 50
45
V
IN
= 4.75V, V
OUT
= -4.0V
V
IN
= 3.15V, V
OUT
= -2.5V
V
IN
= 4.75V, V
OUT
= -4.0V
V
IN
= 3.15V, V
OUT
= -2.5V
V
IN
= 4.75V, V
OUT
= -4.0V
V
IN
= 3.15V, V
OUT
= -2.5V
14
13
12
8
11
10
9
-40
0
-20
20
40
60
80
-40
0
-20
20
40
60
80
TEMPERATURE (
C)
TC1219
Pump Frequency vs. Temperature
15
PUMP FREQUENCY (kHz)
140
130
120
100
90
80
70
50
110
60
20
10
0
40
30
2.5
3.5
4.5
5.5
SUPPLY VOLTAGE (V)
Supply Current
vs. Supply Voltage
150
SUPPLY CURRENT (
A)
TC1220
TC1219
35
45
40
20
30
25
TEMPERATURE (
C)
TC1220
Pump Frequency vs. Temperature
P
UMP FREQUENCY
(
kHz
)
V
IN
= 5.0V
V
IN
= 5.0V
V
IN
= 3.3V
V
IN
= 3.3V
TC1219/TC1220
DS21366B-page 10
2002 Microchip Technology Inc.
TYPICAL CHARACTERISTICS (CONTINUED)
Output Voltage vs. Output Current
-0.5
-5.5
-1.5
-2.5
-3.5
-4.5
0
5
10
15
20
25
30
35 40
OUTPUT CURRENT (mA)
0.5
OUTPUT VOLTAGE (V)
V
IN
= 3.3V
V
IN
= 5.0V
100
90
80
70
60
30
20
10
0
50
40
0
10
5
15
25
20
30 35 40 45 50
CURRENT (mA)
Efficiency vs. Output Current
110
EFFICIENCY (%)
V
IN
= 3.3V
V
IN
= 5.0V
2002 Microchip Technology Inc.
DS21366B-page 11
TC1219/TC1220
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
TC1219/TC1220
Code
TC1219ECH
AM
TC1220ECH
AN
6.2
Taping Form
1
&
= part number code + temperature range
2
(two-digit code)
ex: 1219ECH =
A M
3
represents year and quarter code
4
represents production lot ID code
User Direction of Feed
Component Taping Orientation for 6-Pin SOT-23A (EIAJ SC-74) Devices
Device
Marking
PIN 1
Standard Reel Component Orientation
For TR Suffix Device
(Mark Right Side Up)
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
6-Pin SOT-23A
8 mm
4 mm
3000
7 in
Carrier Tape, Number of Components Per Reel and Reel Size
TC1219/TC1220
DS21366B-page 12
2002 Microchip Technology Inc.
6.3
Package Dimensions
.069 (1.75)
.059 (1.50)
.122 (3.10)
.098 (2.50)
.075 (1.90)
REF.
.020 (0.50)
.014 (0.35)
.037 (0.95)
REF.
.118 (3.00)
.110 (2.80)
.057 (1.45)
.035 (0.90)
.006 (0.15)
.000 (0.00)
.024 (0.60)
.004 (0.10)
10
MAX.
.008 (0.20)
.004 (0.09)
SOT-23A-6
Dimensions: inches (mm)
2002 Microchip Technology Inc.
DS21366B-page 13
TC1219/TC1220
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
Your local Microchip sales office
2.
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3.
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
TC1219/TC1220
DS21366B-page 14
2002 Microchip Technology Inc.
NOTES:
2002 Microchip Technology Inc.
DS21366B-page 15
TC1219/TC1220
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip's products as critical com-
ponents in life support systems is not authorized except with
express written approval by Microchip. No licenses are con-
veyed, implicitly or otherwise, under any intellectual property
rights.
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systems is ISO 9001 certified.
DS21366B-page 16
2002 Microchip Technology Inc.
M
AMERICAS
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Rocky Mountain
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-7456
Atlanta
500 Sugar Mill Road, Suite 200B
Atlanta, GA 30350
Tel: 770-640-0034 Fax: 770-640-0307
Boston
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-692-3848 Fax: 978-692-3821
Chicago
333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: 630-285-0071 Fax: 630-285-0075
Dallas
4570 Westgrove Drive, Suite 160
Addison, TX 75001
Tel: 972-818-7423 Fax: 972-818-2924
Detroit
Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-538-2250 Fax: 248-538-2260
Kokomo
2767 S. Albright Road
Kokomo, Indiana 46902
Tel: 765-864-8360 Fax: 765-864-8387
Los Angeles
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-263-1888 Fax: 949-263-1338
New York
150 Motor Parkway, Suite 202
Hauppauge, NY 11788
Tel: 631-273-5305 Fax: 631-273-5335
San Jose
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
Toronto
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
ASIA/PACIFIC
Australia
Microchip Technology Australia Pty Ltd
Suite 22, 41 Rawson Street
Epping 2121, NSW
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
China - Beijing
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
Bei Hai Wan Tai Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100 Fax: 86-10-85282104
China - Chengdu
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: 86-28-6766200 Fax: 86-28-6766599
China - Fuzhou
Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: 86-591-7503506 Fax: 86-591-7503521
China - Shanghai
Microchip Technology Consulting (Shanghai)
Co., Ltd.
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
China - Shenzhen
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1315, 13/F, Shenzhen Kerry Centre,
Renminnan Lu
Shenzhen 518001, China
Tel: 86-755-2350361 Fax: 86-755-2366086
Hong Kong
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200 Fax: 852-2401-3431
India
Microchip Technology Inc.
India Liaison Office
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O'Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Japan
Microchip Technology Japan K.K.
Benex S-1 6F
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Korea
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Microchip Technology Taiwan
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Denmark
Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: 45 4420 9895 Fax: 45 4420 9910
France
Microchip Technology SARL
Parc d'Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Italy
Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
Arizona Microchip Technology Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
03/01/02
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