2002 Microchip Technology Inc.
DS21390B-page 1
M
TC1411/TC1411N
Features
Latch-Up Protected: Will Withstand 500mA
Reverse Current
Input Will Withstand Negative Inputs Up to 5V
ESD Protected: 4kV
High Peak Output Current: 1A
Wide Operating Range
- 4.5V to 16V
High Capacitive Load Drive Capability: 1000pF in
25nsec
Short Delay Time: 30nsec Typ.
Consistent Delay Times With Changes in Supply
Voltage
Matched Delay Times
Low Supply Current
- With Logic "1" Input: 500
A
- With Logic "0" Input: 100
A
Low Output Impedance: 8
Pinout Same as TC1410/TC1412/TC1413
Applications
Switch Mode Power Supplies
Pulse Transformer Drive
Line Drivers
Relay Driver
Device Selection Table
Package Type
General Description
The TC1411/TC1411N are 1A CMOS buffer/drivers.
They will not latch up under any conditions within their
power and voltage ratings. They are not subject to
damage when up to 5V of noise spiking of either
polarity occurs on the ground pin. They can accept,
without damage or logic upset, up to 500mA of current
of either polarity being forced back into their output. All
terminals are fully protected against up to 4kV of
electrostatic discharge.
As MOSFET drivers, the TC1411/TC1411N can easily
charge a 1000pF gate capacitance in 25nsec with
matched rise and fall times, and provide low enough
impedance in both the ON and the OFF states to
ensure the MOSFET's intended state will not be
affected, even by large transients. The rise and fall time
edges are matched to allow driving short-duration
inputs with greater accuracy.
Part Number
Package
Temp. Range
TC1411COA
8-Pin SOIC
0C to +70C
TC1411CPA
8-Pin PDIP
0C to +70C
TC1411EOA
8-Pin SOIC
-40C to +85C
TC1411EPA
8-Pin PDIP
-40C to +85C
TC1411NCOA
8-Pin SOIC
0C to +70C
TC1411NCPA
8-Pin PDIP
0C to +70C
TC1411NEOA
8-Pin SOIC
-40C to +85C
TC1411NEPA
8-Pin PDIP
-40C to +85C
TC1411
1
2
3
4
V
DD
5
6
7
8
OUT
GND
V
DD
IN
NC
GND
NC = No internal connection
2
6, 7
Inverting
OUT
TC1411N
1
2
3
4
V
DD
5
6
7
8
OUT
GND
V
DD
IN
NC
GND
2
6, 7
Noninverting
OUT
8-Pin PDIP/SOIC
1A High-Speed MOSFET Drivers
TC1411/TC1411N
DS21390B-page 2
2002 Microchip Technology Inc.
Functional Block Diagram
Output
Input
GND
Effective
Input
C = 10pF
300mV
Inverting
Outputs
Noninverting
Outputs
V
DD
TC1411N
4.7V
TC1411
2002 Microchip Technology Inc.
DS21390B-page 3
TC1411/TC1411N
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage..................................................... +20V
Input Voltage...................... V
DD
+ 0.3V to GND 5.0V
Power Dissipation (T
A
70C)
PDIP ........................................................ 730mW
SOIC........................................................ 470mW
Package Thermal Resistance
PDIP R
J-A
..............................................125
C/W
PDIP R
J-C
............................................... 42C/W
SOIC R
J-A
............................................ 155C/W
SOIC R
J-C
.............................................. 45C/W
Operating Temperature Range
C Version .........................................0C to +70C
E Version ..................................... -40C to +85C
Storage Temperature Range ............. -65C to +150C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1411/TC1411N ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Over operating temperature range with 4.5V
V
DD
16V, unless otherwise noted. Typical values are
measured at T
A
= +25C, V
DD
= 16V.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
Input
V
IH
Logic 1, High Input Voltage
2.0
--
--
V
V
IL
Logic 0, Low Input Voltage
--
--
0.8
V
I
IN
Input Current
-1
-10
--
--
1
10
A
0V
V
IN
V
DD,
T
A
= +25C
-40C
T
A
+85C
Output
V
OH
High Output Voltage
V
DD
0.025
--
--
V
DC Test
V
OL
Low Output Voltage
--
--
0.025
V
DC Test
R
O
Output Resistance
--
8
10
10
11
14
14
V
DD
= 16V, I
O
= 10mA, T
A
= +25C,
0C
T
A
+70C
-40C
T
A
+85C
I
PK
Peak Output Current
--
1.0
--
A
V
DD
= 16V
I
REV
Latch-Up Protection
Withstand Reverse Current
--
0.5
--
A
Duty cycle
2%, t
300
sec,
V
DD
= 16V
TC1411/TC1411N
DS21390B-page 4
2002 Microchip Technology Inc.
TC1411/TC1411N ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Over operating temperature range with 4.5V
V
DD
16V, unless otherwise noted. Typical values are
measured at T
A
= +25C, V
DD
= 16V.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
Switching Time (Note 1)
t
R
Rise Time
--
25
27
29
35
40
40
nsec
T
A
= +25C,
0C
T
A
+70C
-40C
T
A
+85C, Figure 3-1
t
F
Fall Time
--
25
27
29
35
40
40
nsec
T
A
= +25C,
0C
T
A
+70C
-40C
T
A
+85C, Figure 3-1
t
D1
Delay Time
--
30
33
35
40
45
45
nsec
T
A
= +25C,
0C
T
A
+70C
-40C
T
A
+85C, Figure 3-1
t
D2
Delay Time
--
30
33
35
40
45
45
nsec
T
A
= +25C,
0C
T
A
+70C
-40C
T
A
+85C, Figure 3-1
Power Supply
I
S
Power Supply Current
--
--
0.5
0.1
1.0
0.15
mA
V
IN
= 3V, V
DD
= 16V
V
IN
= 0V
Note
1:
Switching times ensured by design.
2002 Microchip Technology Inc.
DS21390B-page 5
TC1411/TC1411N
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
PIN FUNCTION TABLE
Pin No.
(8-Pin PDIP,
SOIC)
Symbol
Description
1
V
DD
Supply input, 4.5V to 16V.
2
INPUT
Control input.
3
NC
No connection.
4
GND
Ground.
5
GND
Ground.
6
OUTPUT
CMOS totem-pole output, common to pin 7.
7
OUTPUT
CMOS totem-pole output, common to pin 6.
8
V
DD
Supply Input, 4.5V to 16V.
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