2002 Microchip Technology Inc.
DS21416B-page 1
M
TC429
Features
High Peak Output Current: 6A
Wide Operating Range: 7V to 18V
High Impedance CMOS Logic Input
Logic Input Threshold Independent of Supply
Voltage
Low Supply Current
- With Logic 1 Input 5mA Max
- With Logic 0 Input 0.5mA Max
Output Voltage Swing Within 25mV of Ground
or V
DD
Short Delay Time: 75nsec Max
High Capacitive Load Drive Capability
- t
RISE
, t
FALL
= 35nsec Max With
C
LOAD
= 2500pF
Applications
Switch-Mode Power Supplies
CCD Drivers
Pulse Transformer Drive
Class D Switching Amplifiers
Device Selection Table
Package Type
General Description
The TC429 is a high-speed, single CMOS-level
translator and driver. Designed specifically to drive
highly capacitive power MOSFET gates, the TC429
features 2.5
output impedance and 6A peak output
current drive.
A 2500pF capacitive load will be driven 18V in 25nsec.
The rapid switching times with large capacitive loads
minimize MOSFET transition power loss.
A TTL/CMOS input logic level is translated into an
output voltage swing that equals the supply and will
swing to within 25mV of ground or V
DD
. Input voltage
swing may equal the supply. Logic input current is
under 10
A, making direct interface to CMOS/bipolar
switch-mode power supply controllers easy. Input
"speed-up" capacitors are not required.
The CMOS design minimizes quiescent power supply
current. With a logic 1 input, power supply current is
5mA maximum and decreases to 0.5mA for logic 0
inputs.
For dual devices, see the TC426/TC427/TC428,
TC4426/TC4427/TC4428 and TC4426A/TC4427A/
TC4428A data sheets.
For noninverting applications, or applications requiring
latch-up protection, see the TC4420/TC4429 data
sheet.
Typical Application
Part Number
Package
Temp. Range
TC429CPA
8-Pin PDIP
0C to +70C
TC429EPA
8-Pin PDIP
-40C to +85C
TC429MJA
8-Pin CERDIP
-55C to +125C
NC = No internal connection
NOTE: Duplicate pins must both be connected for proper operation.
1
8
2
7
3
6
4
5
TC429
GND
GND
NC
INPUT
V
DD
OUTPUT
OUTPUT
V
DD
8-Pin PDIP/CERDIP
Output
Input
GND
Effective
Input
C = 38pF
V
DD
300mV
2
4,5
1,8
6,7
TC429
6A Single High-Speed, CMOS Power MOSFET Driver
TC429
DS21416B-page 2
2002 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage .....................................................+20V
Input Voltage, Any Terminal
...................................V
DD
+ 0.3V to GND 0.3V
Power Dissipation (T
A
70C)
PDIP .........................................................730mW
CERDIP....................................................800mW
Derating Factor
PDIP .................................5.6mW/C Above 36C
CERDIP................................................6.4mW/C
Operating Temperature Range
C Version......................................... 0C to +70C
E Version ...................................... -40C to +85C
M Version ...................................-55C to +125C
Storage Temperature Range ..............-65C to +150C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC429 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: T
A
= +25C with 7V
V
DD
18V, unless otherwise noted.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
Input
V
IH
Logic 1, High Input Voltage
2.4
1.8
--
V
V
IL
Logic 0, Low Input Voltage
--
1.3
0.8
V
I
IN
Input Current
-10
--
10
A
0V
V
IN
V
DD
Output
V
OH
High Output Voltage
V
DD
0.025
--
--
V
V
OL
Low Output Voltage
--
--
0.025
V
R
O
Output Resistance
--
1.8
2.5
V
IN
= 0.8V,
I
OUT
= 10mA, V
DD
= 18V
--
1.5
2.5
V
IN
= 2.4V,
I
OUT
= 10mA, V
DD
= 18V
I
PK
Peak Output Current
--
6
--
A
V
DD
= 18V (Figure 3-4)
Switching Time (Note 1)
t
R
Rise Time
--
23
35
nsec
Figure 3-1, C
L
= 2500pF
t
F
Fall Time
--
25
35
nsec
Figure 3-1, C
L
= 2500pF
t
D1
Delay Time
--
53
75
nsec
Figure 3-1
t
D2
Delay Time
--
60
75
nsec
Figure 3-1
Power Supply
I
S
Power Supply Current
--
--
3.5
0.3
5
0.5
mA
V
IN
= 3V
V
IN
= 0V
Note
1:
Switching times ensured by design.
2002 Microchip Technology Inc.
DS21416B-page 3
TC429
TC429 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Over operating temperature range with 7V
V
DD
18V, unless otherwise noted.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
Input
V
IH
Logic 1, High Input Voltage
2.4
--
--
V
V
IL
Logic 0, Low Input Voltage
--
--
0.8
V
I
IN
Input Current
-10
--
10
A
0V
V
IN
V
DD
Output
V
OH
High Output Voltage
V
DD
0.025
--
--
V
V
OL
Low Output Voltage
--
--
0.025
V
R
O
Output Resistance
--
--
5
V
IN
= 0.8V,
I
OUT
= 10mA, V
DD
= 18V
--
--
5
V
IN
= 2.4V,
I
OUT
= 10mA, V
DD
= 18V
Switching Time (Note 1)
t
R
Rise Time
--
--
70
nsec
Figure 3-1, C
L
= 2500pF
t
F
Fall Time
--
--
70
nsec
Figure 3-1, C
L
= 2500pF
t
D1
Delay Time
--
--
100
nsec
Figure 3-1
t
D2
Delay Time
--
--
120
nsec
Figure 3-1
Power Supply
I
S
Power Supply Current
--
--
--
--
12
1
mA
V
IN
= 3V
V
IN
= 0V
Note
1:
Switching times ensured by design.
TC429
DS21416B-page 4
2002 Microchip Technology Inc.
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
PIN FUNCTION TABLE
Pin No.
(8-Pin PDIP,
CERDIP)
Symbol
Description
1
V
DD
Supply input, 7V to 18V.
2
INPUT
Control input, TTL/CMOS compatible logic input.
3
NC
No connection.
4
GND
Ground.
5
GND
Ground.
6
OUTPUT
CMOS totem-pole output, common to Pin 7.
7
OUTPUT
CMOS totem-pole output, common to Pin 6.
8
V
DD
Supply input, 7V to 18V.
2002 Microchip Technology Inc.
DS21416B-page 5
TC429
3.0
APPLICATIONS INFORMATION
3.1
Supply Bypassing
Charging and discharging large capacitive loads
quickly requires large currents. For example, charging
a 2500pF load to 18V in 25nsec requires a 1.8A current
from the device's power supply.
To ensure low supply impedance over a wide frequency
range, a parallel capacitor combination is recom-
mended for supply bypassing. Low-inductance ceramic
disk capacitors with short lead lengths (< 0.5 in.) should
be used. A 1
F film capacitor in parallel with one or two
0.1
F ceramic disk capacitors normally provides
adequate bypassing.
3.2
Grounding
The high-current capability of the TC429 demands
careful PC board layout for best performance. Since
the TC429 is an inverting driver, any ground lead
impedance will appear as negative feedback which can
degrade switching speed. The feedback is especially
noticeable with slow rise-time inputs, such as those
produced by an open-collector output with resistor pull-
up. The TC429 input structure includes about 300mV of
hysteresis to ensure clean transitions and freedom
from oscillation, but attention to layout is still
recommended.
Figure 3-3 shows the feedback effect in detail. As the
TC429 input begins to go positive, the output goes
negative and several amperes of current flow in the
ground lead. As little as 0.05
of PC trace resistance
can produce hundreds of millivolts at the TC429 ground
pins. If the driving logic is referenced to power ground,
the effective logic input level is reduced and oscillations
may result.
To ensure optimum device performance, separate
ground traces should be provided for the logic and
power connections. Connecting logic ground directly to
the TC429 GND pins ensures full logic drive to the input
and fast output switching. Both GND pins should be
connected to power ground.
FIGURE 3-1:
INVERTING DRIVER
SWITCHING TIME
TEST CIRCUIT
FIGURE 3-2:
SWITCHING SPEED
1
8
4
5
2
6
7
0.1
F
+5V
18V
0V
0V
90%
10%
10%
10%
90%
90%
Input
V
DD
= 18V
Input
Output
t
D1
t
F
t
R
t
D2
C
L
= 2500pF
1
F
Input: 100kHz,
square wave,
t
RISE
= t
FALL
10nsec
Output
TC429
TIME (100ns/DIV)
V
O
L
T
A
GE (5V/DIV)
CL = 2500pF
V
S
= 18V
5V
INPUT
OUTPUT
100ns
TIME (100ns/DIV)
V
O
L
T
A
GE (5V/DIV)
CL = 2500pF
V
S
= 7V
5V
INPUT
OUTPUT
100ns
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