18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb DDR SIO SRAM
2-WORD BURST

MT57W2MH8C
MT57W1MH18C
MT57W512H36C

Features

· DLL circuitry for accurate output data placement
· Separate independent read and write data ports
· DDR READ or WRITE operation initiated each cycle
· Fast clock to valid data times
· Full data coherency, providing most current data
· Two-tick burst counter for low DDR transaction size
· Double data rate operation on read and write ports
· Two input clocks (K and K#) for precise DDR timing

at clock rising edges only

· Two output clocks (C and C#) for precise flight time

and clock skew matching--clock and data delivered
together to receiving device

· Optional-use echo clocks (CQ and CQ#) for flexible

receive data synchronization

· Single address bus
· Simple control logic for easy depth expansion
· Internally self-timed, registered writes
· Core V

= 1.8V (±0.1V); I/O V

Q = 1.5V to V

(±0.1V) HSTL

· Clock-stop capability with

µs restart

· 13mm x 15mm, 1mm pitch, 11 x 15 grid FBGA

package

· User-programmable impedance output
· JTAG boundary scan

General Description

The Micron

DDR separate I/O, synchronous, pipe-

lined burst SRAM employs high-speed, low-power
CMOS designs using an advanced 6T CMOS process.

The DDR architecture consists of two separate DDR

(double data rate) ports to access the memory array.
The read port has dedicated data outputs to support
READ operations. The write port has dedicated data
inputs to support WRITE operations. This architecture
eliminates the need for high-speed bus turnaround.
Access to each port is accomplished using a common
address bus. Addresses for reads and writes are latched
on the rising edge of the K input clock. Each address
location is associated with two words that burst
sequentially into or out of the device. Bus turnaround
cycles are eliminated and a new data transaction can
be requested each clock cycle, permitting higher
request rates than DDR SRAMs without separated
input and output buses.

Options

Marking

NOTE:

A Part Marking Guide for the FBGA devices can be found on

Micron's Web site--

http://www.micron.com/numberguide.

· Clock Cycle Timing

3ns (333 MHz)

-3

3.3ns (300 MHz)

-3.3

4ns (250 MHz)

-4

5ns (200 MHz)

-5

6ns (167 MHz)

-6

7.5ns (133 MHz)

-7.5

· Configurations

2 Meg x 8

MT57W2MH8C

1 Meg x 18

MT57W1MH18C

512K x 36

MT57W512H36C

· Package

165-ball, 13mm x 15mm FBGA

· Operating Temperature Range

Commercial (0°C

£ T

£ +70°C)

None

Table 1:

Valid Part Numbers

PART NUMBER

DESCRIPTION

MT57W2MH8CF-xx

2 Meg x 8, DDR SIOb2 FBGA

MT57W1MH18CF-xx

1 Meg x 18, DDR SIOb2 FBGA

MT57W512H36CF-xx

512K x 36, DDR SIOb2 FBGA

Figure 1: 165-Ball FBGA

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

Depth expansion is accomplished with a single

device select (LD#), which is received at K rising edge.
All synchronous inputs pass through registers con-
trolled by the K or K# input clock rising edges. Active
LOW byte writes (BWx#) permit byte write or nibble
write selection. Write data and byte writes are regis-
tered on the rising edges of both K and K#. The
addressing within each burst of two is fixed and
sequential, beginning with the lowest address and
ending with the highest address. All synchronous data
outputs pass through output registers controlled by
the rising edges of the output clocks (C and C# if pro-
vided, otherwise K, K#).

Four balls are used to implement JTAG test capabili-

ties: test mode select (TMS), test data-in (TDI), test
clock (TCK), and test data-out (TDO). JTAG circuitry is
used to serially shift data to and from the SRAM. JTAG
inputs use JEDEC-standard 1.8V I/O levels to shift data
during this testing mode of operation.

The SRAM operates from a 1.8V power supply, and

all inputs and outputs are HSTL-compatible. The
device is ideally suited for applications that require a
new transaction to be initiated each clock cycle.

Please refer to Micron's Web site (

www.micron.com/

sramds

) for the latest data sheet.

READ/WRITE Operations

All bus transactions operate on an uninterruptable

burst-of-two data and require one full clock cycle of
bus utilization. Any transaction type can be initiated at
K rising edge independent of the previous transaction
type. This permits any random operation without ever
needing bus turnaround delays.

READ cycles are pipelined. The request is initiated

by driving R/W# HIGH and providing the address at K
rising edge. Data is delivered after the next rising edge
of K# (t + 1), using C and C# as the output timing refer-
ences; or K and K# if C and C# are tied HIGH. If C and
C# are tied HIGH, they may not be toggled during
device operation. Output tri-stating is automatically
controlled so that the bus is released if no data is being
delivered. This permits banked SRAM systems with no
complex output enable (OE) timing generation. Back-
to-back READ cycles can be initiated at every K rising
edge.

WRITE cycles are initiated by driving R/W# LOW

and providing the address at K rising edge. Data is
expected at the rising edge of K and K#, beginning at
the next K rising edge after the cycle is initiated. Write
registers are incorporated to facilitate pipelined self-
timed WRITE cycles and to provide fully coherent data
for all combinations of reads and writes. A read can
immediately follow a write even if they are to the same
address. Although the write data has not been written
to the memory array, the SRAM will deliver the data
from the write register instead of using the older data
from the memory array. The latest data is always uti-
lized for all bus transactions. WRITE cycles can be ini-
tiated on every K rising edge.

PARTIAL WRITE Operations

BYTE WRITE operations are supported, except for

x8 devices in which nibble write is supported. The
active LOW byte write controls, BWx# (NWx#), are reg-
istered coincident with their corresponding data. This
feature can eliminate the need for some READ-MOD-
IFY-WRITE cycles, collapsing it to a single BYTE/NIB-
BLE WRITE operation in some instances.

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

Programmable Impedance Output
Buffer

The DDR SRAM is equipped with programmable

impedance output buffers. This allows a user to match
the driver impedance to the system. To adjust the
impedance, an external precision resistor (RQ) is con-
nected between the ZQ ball and V

. The value of the

resistor must be five times the desired impedance. For
example, a 350

W resistor is required for an output

impedance of 70

W. To ensure that output impedance is

one-fifth the value of RQ (within 15 percent), the range
of RQ is 175

W to 350W . Alternately, the ZQ ball can be

connected directly to V

Q, which will place the

device in a minimum impedance mode.

Output impedance updates may be required

because, over time, variations may occur in supply
voltage and temperature. The device samples the value
of RQ. Impedance updates are transparent to the sys-
tem; they do not affect device operation, and all data
sheet timing and current specifications are met during
an update.

The device will power up with an output impedance

set at 50

W . To guarantee optimum output driver

impedance after power-up, the SRAM needs 1,024
cycles to update the impedance. The user can operate
the part with fewer than 1,024 clock cycles, but optimal
output impedance is not guaranteed.

Clock Considerations

This device utilizes internal delay-locked loops for

maximum output, data valid window. It can be placed
into a stopped-clock state to minimize power, with a

modest restart time of 1,024 clock cycles. Circuitry
automatically resets the DLL when the absence of an
input clock is detected. See Micron Technical Note TN-
54-02 for more information on clock DLL start-up pro-
cedures.

Optional-use echo clocks are provided to precisely

indicate data validity. Data changes occur very near to
the rising edges of CQ and CQ#.

Single Clock Mode

The SRAM can be used with the single K and K#

clock pair by tying C and C# HIGH. In this mode, the
SRAM will use K and K# in place of C and C#. This
mode provides the most rapid data output but does
not compensate for system clock skew and flight
times.

The output echo clocks are precise references to

output data. CQ and CQ# are both rising edge and fall-
ing edge accurate and are 180° out of phase. Either or
both may be used for output data capture. K or C rising
edge triggers CQ rising and CQ# falling edge. CQ rising
edge indicates first data response for QDRI and DDRI
(version 1, non-DLL) SRAM, while CQ# rising edge
indicates first data response for QDRII and DDRII (ver-
sion 2, DLL) SRAM.

Depth Expansion

Depth expansion is easily done by providing a new

LD# signal for each bank. R/W# can be shared among
all SRAMs in the system, if driver fanout permits.

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

Figure 2: Functional Block Diagram

2 Meg x 8; 1 Meg x 18; 512K x 36

NOTE:

1. The functional block diagram illustrates simplified device operation. See truth table, ball descriptions, and timing

diagrams for detailed information.

2. For 2 Meg x 8, n = 21, a = 8; NWx# = 2 separate nibble writes.

For 1 Meg x 18, n = 20, a = 18; BWx# = 2 separate byte writes.
For 512K x 36, n = 19, a = 36; BWx# = 4 separate byte writes.

ADDRESS

D (Data In)

LD#

R/W#

LD#

R/W#

BWx#

x a

MEMORY

ARRAY

ADDRESS

REGISTRY

& LOGIC

DATA

REGISTRY

& LOGIC

C,C#

K,K#

(Data Out)

R
E
G

T
E

MUX

D
R

V
E
R

T
E

O
U

T
P

O
U

T
P

R
E
G

B
U
F
F
E
R

P
S

S
E
N
S
E

O
U

T
P

S
E

E
C
T

CQ
CQ#

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

Figure 3: Application Example

NOTE:

1. In this approach, the second clock pair drives the C and C# clocks but is delayed such that return data meets setup

and hold times at the bus master.

2. Consult Micron Technical Notes for more thorough discussions of clocking schemes.
3. Data capture is possible using only one of the two signals. CQ and CQ# clocks are optional use outputs.
4. For high frequency applications (200 MHz and faster) the CQ and CQ# clocks (for data capture) are recommended

over the C and C# clocks (for data alignment). The C and C# clocks are optional use inputs.

R/W

Vt = V

REF

C C#

CQ#

D
SA

C C#

D
SA

BUS

MASTER

(CPU

ASIC)

SRAM 1

SRAM 2

DATA IN

DATA OUT

Address

LD#

R/W#

BW#

SRAM 1 Input CQ

SRAM 1 Input CQ#

SRAM 4 Input CQ

SRAM 4 Input CQ#

Source K

Source K#

Delayed K

Delayed K#

R = 50

R = 250

CQ#

R = 250

R/W

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

Table 2:

2 Meg x 8 Ball Layout (Top View)
165-Ball FBGA

CQ#

SS/

R/W#

NW1#

NC/

LD#

SS/

NC/

NW0#

DLL#

REF

TDO

TCK

TMS

TDI

NOTE:

1. Expansion address: 2A for 72Mb
2. NW1# controls writes to D4:D7
3. Expansion address: 7A for 144Mb
4. Expansion address: 10A for 36Mb
5. Expansion address: 5B for 288Mb
6. NW0# controls writes to D0:D3

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

Table 3:

1 Meg x 18 Ball Layout (Top View)
165-Ball FBGA

CQ#

SS/

NC/

R/W#

BW1#

NC/

LD#

SS/

BW0#

D10

D11

Q10

Q11

Q12

D12

D13

Q13

DLL#

REF

D14

Q14

Q15

D15

D16

D17

Q16

Q17

TDO

TCK

TMS

TDI

NOTE:

1. Expansion address: 2A for 144Mb
2. Expansion address: 3A for 36Mb
3. BW1# controls writes to D9:D17
4. Expansion address: 7A for 288Mb
5. Expansion address: 10A for 72Mb
6. BW0# controls writes to D0:D8

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

Table 4:

512K x 36 Ball Layout (Top View)
165-Ball FBGA

CQ#

SS/

NC/

R/W#

BW2#

BW1#

LD#

NC/

Q27

Q18

D18

BW3#

BW0#

D17

Q17

D27

Q28

D19

D16

D28

D20

Q19

Q16

D15

Q29

D29

Q20

Q15

Q30

Q21

D21

D14

Q14

D30

D22

Q22

Q13

D13

DLL#

REF

D31

Q31

D23

D12

Q32

D32

Q23

Q12

Q33

Q24

D24

D11

Q11

D33

Q34

D25

D10

D34

D26

Q25

Q10

Q35

D35

Q26

TDO

TCK

TMS

TDI

NOTE:

1. Expansion address: 2A for 288Mb
2. Expansion address: 3A for 72Mb
3. BW2# controls writes to D18:D26
4. BW1# controls writes to D9:D17
5. Expansion address: 9A for 36Mb
6. Expansion address: 10A for 144Mb
7. BW3# controls writes to D27:D35
8. BW0# controls writes to D0:D8

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

Table 5:

Ball Descriptions

SYMBOL

TYPE

DESCRIPTION

BW_#

NW_#

Input

Synchronous Byte Writes (or Nibble Writes on x8): When LOW, these inputs cause their respective
bytes to be registered and written if W# had initiated a WRITE cycle. These signals must meet setup
and hold times around the rising edges of K and K# for each of the two rising edges comprising the
WRITE cycle. See Ball Layout figures for signal to data relationships.

Input

Output Clock: This clock pair provides a user-controlled means of tuning device output data. The
rising edge of C# is used as the output timing reference for first output data. The rising edge of C is
used as the output reference for second output data. Ideally, C# is 180 degrees out of phase with C.
C and C# may be tied HIGH to force the use of K and K# as the output reference clocks instead of
having to provide C and C# clocks. If tied HIGH, these inputs may not be allowed to toggle during
device operation.

Input

Synchronous Data Inputs: Input data must meet setup and hold times around the rising edges of K
and K# during WRITE operations. See Ball Layout figures for ball site location of individual signals.
The x8 device uses D0:D7. Remaining signals are NC. The x18 device uses D0:D17. Remaining signals
are NC. The x36 device uses D0:D35. Remaining signals are NC.

DLL#

Input

DLL Disable: When LOW, this input causes the DLL to be bypassed for stable, low-frequency
operation.

Input

Input Clock: This input clock pair registers address and control inputs on the rising edge of K, and
registers data on the rising edge of K and the rising edge of K#. K# is ideally 180 degrees out of
phase with K. All synchronous inputs must meet setup and hold times around the clock rising edges.

LD#

Input

Synchronous Load: This input is brought LOW when a bus cycle sequence is to be defined. This
definition includes address and read/write direction. All transactions operate on a burst of two data
(one clock period of bus activity).

R/W#

Input

Synchronous Read/Write Input: When LD# is LOW, this input designates the access type (READ when
R/W# is HIGH, WRITE when R/W# is LOW) for the loaded address. R/W# must meet the setup and
hold times around the rising edge of K.

Input

Synchronous Address Inputs: These inputs are registered and must meet the setup and hold times
around the rising edge of K. See Ball Layout figures for address expansion inputs. All transactions
operate on a burst of two words (one clock period of bus activity). These inputs are ignored when
both ports are deselected.

TCK

Input

IEEE 1149.1 Clock Input: 1.8V I/O levels. This ball must be tied to V

if the JTAG function is not used

in the circuit.

TMS

TDI

Input

IEEE 1149.1 Test Inputs: 1.8V I/O levels. These balls may be left Not Connected if the JTAG function is
not used in the circuit.

REF

Input

HSTL Input Reference Voltage: Nominally V

Q/2 but may be adjusted to improve system noise

margin. Provides a reference voltage for the HSTL input buffer trip point.

Input

Output Impedance Matching Input: This input is used to tune the device outputs to the system data
bus impedance. DQ output impedance is set to 0.2 x RQ, where RQ is a resistor from this ball to
ground. Alternately, this ball can be connected directly to V

Q to enable the minimum impedance

mode. This ball cannot be connected directly to GND or left unconnected.

CQ#, CQ

Output

Synchronous Echo Clock Outputs: The edges of these outputs are tightly matched to the
synchronous data outputs and can be used as data valid indication. These signals run freely and do
not stop when Q tri-states.

Output

Synchronous Data Outputs: Output data is synchronized to the respective C and C# or to K and K#
rising edges if C and C# are tied HIGH. This bus operates in response to R# commands. See Ball
Layout figures for ball site location of individual signals. The x8 device uses Q0:Q7. Remaining
signals are NC. The x18 device uses Q0:Q17. Remaining signals are NC.

The x36 device uses Q0:Q35.

Remaining signals are NC.

TDO

Output

IEEE 1149.1 Test Output: 1.8V I/O level.

Supply

Power Supply: 1.8V nominal. See DC Electrical Characteristics and Operating Conditions for range.

Supply

Power Supply: Isolated Output Buffer Supply: Nominally, 1.5V. 1.8V is also permissible. See DC
Electrical Characteristics and Operating Conditions for range.

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

NOTE:

1. X means "Don't Care." H means logic HIGH. L means logic LOW.

means rising edge; ¯ means falling edge.

2. Data inputs are registered at K and K# rising edges. Data outputs are delivered at C and C# rising edges, except if C

and C# are HIGH, then data outputs are delivered at K and K# rising edges.

3. LD# and R/W# must meet setup and hold times around the rising edge (LOW to HIGH) of K and are registered at the

rising edge of K.

4. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.
5. Refer to state diagram and timing diagrams for clarification.
6. It is recommended that K = K# = C = C# when clock is stopped. This is not essential but permits most rapid restart by

overcoming transmission line charging symmetrically.

7. Assumes a WRITE cycle was initiated. BW0# and BW1# can be altered for any portion of the BURST WRITE operation

provided that the setup and hold requirements are satisfied.

8. This table illustrates the operation for the x18 devices. The x36 device operation is similar, except for the addition of

BW2# (controls D18:D26) and BW3# (controls D27:D35). The x8 device operation is similar, except that NW0# controls
D0:D3, and NW1# controls D4:D7.

Table 6:

Truth Table

Notes 1-6

OPERATION

LD#

R/W#

D or Q

WRITE Cycle:
Load address, input write data on
consecutive K and K# rising edges

®H

(A0)

K(t)

Q = High-Z

(A0 + 1)

#(t + 1)

Q = High-Z

READ Cycle:
Load address, output data on
consecutive C and C# rising edges

®H

(A0)

C#(t)

(A0 + 1)

C(t + 1)

NOP: No operation

®H

D = X

Q = High-Z

D = X

Q = High-Z

STANDBY: Clock stopped

Stopped

State

Table 7:

BYTE WRITE Operation

Notes 7, 8

OPERATION

BW0#

BW1#

WRITE D0:17 at K rising edge

®H

WRITE D0:17 at K# rising edge

®H

WRITE D0:8 at K rising edge

®H

WRITE D0:8 at K# rising edge

®H

WRITE D9:17 at K rising edge

®H

WRITE D9:17 at K# rising edge

®H

WRITE nothing at K rising edge

®H

WRITE nothing at K# rising edge

®H

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

Absolute Maximum Ratings

Voltage on V

Supply

Relative to V

....................................... -0.5V to +2.8V

Voltage on V

Q Supply

Relative to V

....................................... -0.5V to +V

...................................................... -0.5V to V

+0.5V

Storage Temperature ..............................-55ºC to +125ºC
Junction Temperature .......................................... +125ºC
Short Circuit Output Current .............................. ±70mA

Stresses greater than those listed under Absolute

Maximum Ratings may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other condi-
tions above those indicated in the operational sections
of this specification is not implied. Exposure to abso-
lute maximum rating conditions for extended periods
may affect reliability.

Maximum Junction Temperature depends upon

package type, cycle time, loading, ambient tempera-
ture, and airflow.

Table 8:

DC Electrical Characteristics and Operating Conditions

Notes appear following parameter tables on page 17; 0°C

£ T

£ +70°C; V

= 1.8V ±0.1V unless otherwise noted

DESCRIPTION

CONDITIONS

SYMBOL

MIN

MAX

UNITS

NOTES

Input High (Logic 1) Voltage

(

)

REF

+ 0.1

Q + 0.3

3, 4

Input Low (Logic 0) Voltage

(

DC)

-0.3

REF

- 0.1

3, 4

Clock Input Signal Voltage

-0.3

Q + 0.3

3, 4

Input Leakage Current

£ V

-5

µA

Output Leakage Current

Output(s) disabled,

£ V

Q (Q)

-5

µA

Output High Voltage

£ 0.1mA

(

LOW

)

Q - 0.2

3, 5, 6

Note 1

Q/2 - 0.12

Q/2 + 0.12

3, 5, 6

Output Low Voltage

£ 0.1mA

(

LOW

)

0.2

3, 5, 6

Note 2

Q/2 - 0.12

Q/2 + 0.12

3, 5, 6

Supply Voltage

1.7

1.9

Isolated Output Buffer Supply

1.4

3, 7

Reference Voltage

REF

0.68

0.95

Table 9:

AC Electrical Characteristics and Operating Conditions

Notes appear following parameter tables on page 17; 0°C

£ T

£ +70°C; V

= 1.8V ±0.1V unless otherwise noted

DESCRIPTION

CONDITIONS

SYMBOL

MIN

MAX

UNITS

NOTES

Input High (Logic 1) Voltage

(

)

REF

+ 0.2

3, 4, 8

Input Low (Logic 0) Voltage

(

)

REF

- 0.2

3, 4, 8

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

Table 10: I

Operating Conditions and Maximum Limits

Notes appear following parameter tables on page 17; 0°C

£ T

£ +70°C; V

= 1.8V ±0.1V unless otherwise noted

MAX

DESCRIPTION

CONDITIONS

SYM

TYP

-3

-3.3

-4

-5

-6

-7.5

UNITS

NOTES

Operating Supply
Current: DDR

All inputs

£ VIL or

VIH;

Cycle time

KHKH

(MIN

); Outputs open; x:1

ratio for READs to

WRITEs; 50% address

and data bits toggling

on each clock cycle

x8, x18

x36

TBD

525
710

475
640

400
545

330
445

280
380

235
310

9, 10

Standby Supply
Current: NOP

KHKH =

KHKH (MIN);

Device in NOP state;

All addresses/data static

SB1

x8, x18

x36

TBD

255
265

235
240

200
210

170
180

150
160

125
135

10, 11

Output Supply
Current: DDR
(Information only)

= 15pF

x18
x36

TBD

42
95

189

38
85

170

32
71

142

25
57

142

21
47
95

17
38
76

Table 11: Capacitance

Note 13; notes appear following parameter tables on page 17

DESCRIPTION

CONDITIONS

SYMBOL

TYP

MAX

UNITS

Address/Control Input Capacitance

= 25°C; f = 1 MHz

4.5

5.5

Input, Output Capacitance (D, Q)

Clock Capacitance

5.5

6.5

Table 12: Thermal Resistance

Note 13; notes appear following parameter tables on page 17

DESCRIPTION

CONDITIONS

SYMBOL

TYP

UNITS

NOTES

Junction to Ambient (Airflow of 1m/s)

Soldered on a 4.25 x 1.125 inch,

4-layer printed circuit board

19.4

°C/W

Junction to Case (Top)

1.0

°C/W

Junction to Balls (Bottom)

9.6

°C/W

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

Table 13: AC Electrical Characteristics and Recommended Operating Conditions

Notes 16-19; 22; notes appear following parameter tables on page 17; 0°C

£ T

£ +70°C; T

£ +95°C; V

= 1.8V ±0.1V

DESCRIPTION

SYM

-3

-3.3

-4

-5

-6

-7.5

UNITS NOTES

MIN

MAX

MIN

MAX

MIN

MAX

MIN

MAX

MIN

MAX

MIN

MAX

Clock

Clock cycle
time (K, K#, C,
C#)

KHKH

3.00

3.47

3.30

4.20

4.00

5.25

5.00

6.30

6.00

7.88

7.50

8.40

Clock phase
jitter (K, K#, C,
C#)

KC var

0.20

Clock HIGH
time (K, K#, C,
C#)

KHKL

1.20

1.32

1.60

2.00

2.40

3.00

Clock LOW
time (K, K#, C,
C#)

KLKH

1.20

1.32

1.60

2.00

2.40

3.00

Clock to clock#

®K#,

®C#) at

KHKH

minimum

KHK#H 1.35

1.49

1.80

2.20

2.70

3.38

Clock# to clock
(K

#®K,

#®C) at

KHKH

minimum

K#HKH 1.35

1.49

1.80

2.20

2.70

3.38

Clock to data

clock

KHCH

0.00

1.30

0.00

1.45

0.00

1.80

0.00

2.30

0.00

2.80

0.00

3.55

DLL lock time
(K, C)

lock

1,024

cycles

K static to DLL
reset

reset

Output Times

C, C# HIGH to
output valid

CHQV

0.45

0.50

C, C# HIGH to
output hold

CHQX

-0.45

-0.50

C, C# HIGH to
echo clock
valid

CHCQ

0.45

0.50

C, C# HIGH to
echo clock hold

CHCQ

-0.45

-0.50

CQ, CQ# HIGH
to output valid

CQHQ

0.25

0.27

0.30

0.35

0.40

CQ, CQ# HIGH
to output hold

CQHQ

-0.25

-0.27

-0.30

-0.35

-0.40

C HIGH to
output High-Z

CHQZ

0.45

0.50

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

C HIGH to
output Low-Z

CHQX1 -0.45

-0.45

-0.50

Setup Times

Address valid
to K rising
edge

AVKH

0.40

0.50

0.60

0.70

Control inputs
valid to K rising

edge

IVKH

0.40

0.50

0.60

0.70

Data-in valid to
K, K# rising

edge

DVKH

0.28

0.30

0.35

0.40

0.50

Hold Times

K rising edge

to address hold

KHAX

0.40

0.50

0.60

0.70

K rising edge
to control

inputs hold

KHIX

0.40

0.50

0.60

0.70

K, K# rising
edge to data-in

hold

KHDX

0.28

0.30

0.35

0.40

0.50

Table 13: AC Electrical Characteristics and Recommended Operating Conditions

(Continued)

DESCRIPTION

SYM

-3

-3.3

-4

-5

-6

-7.5

UNITS NOTES

MIN

MAX

MIN

MAX

MIN

MAX

MIN

MAX

MIN

MAX

MIN

MAX

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

Notes

1. Outputs are impedance-controlled. |I

| =

Q/2)/(RQ/5) for values of 175

W £ RQ £ 350W .

2. Outputs are impedance-controlled. I

= (V

2)/(RQ/5) for values of 175

W £ RQ £ 350W .

3. All voltages referenced to V

(GND).

4. Overshoot: V

(

)

£ V

+ 0.7V for t

KHKH/2

Undershoot: V

(

)

³ -0.5V for t £

KHKH/2

Power-up: V

£ V

Q + 0.3V and V

£ 1.7V

and V

£ 1.4V for t £ 200ms

During normal operation, V

Q must not exceed

. LD# and R/W# signals may not have pulse

widths less than

KHKL (MIN) or operate at cycle

rates less than

KHKH (MIN).

5. AC load current is higher than the shown DC val-

ues. AC I/O curves are available upon request.

6. HSTL outputs meet JEDEC HSTL Class I and Class

II standards.

7. The nominal value of V

Q may be set within the

range of 1.5V to 1.8V DC, and the variation of
V

Q must be limited to ±0.1V DC.

8. To maintain a valid level, the transitioning edge of

the input must:
a. Sustain a constant slew rate from the current AC

level through the target AC level, V

(

) or

(

b. Reach at least the target AC level.
c. After the AC target level is reached, continue to

maintain at least the target DC level, V

(

) or

(

9. I

is specified with no output current. I

is lin-

ear with frequency. Typical value is measured at
6ns cycle time.

10. Typical values are measured at V

= 1.8V, V

Q =

1.5V, and temperature = 25°C.

11. NOP currents are valid when entering NOP after

all pending READ and WRITE cycles are com-
pleted.

12. Average I/O current and power is provided for

informational purposes only and is not tested.
Calculation assumes that all outputs are loaded
with C

(in farads), f = input clock frequency, half

of outputs toggle at each transition (n = 18 for the
x36), C

= 6pF, V

Q = 1.5V and uses the equa-

tions: Average I/O Power as dissipated by the
SRAM is: P = 0.5 × n × f × V

+ 2C

Average IDDQ = n × f × V

Q x (C

+ C

13. This parameter is sampled.
14. Average thermal resistance between the die and

the case top surface per MIL SPEC 883 Method
1012.1.

15. Junction temperature is a function of total device

power dissipation and device mounting environ-
ment. Measured per SEMI G38-87.

16. This is a synchronous device. All addresses, data,

and control lines must meet the specified setup
and hold times for all latching clock edges.

17. Test conditions as specified with the output load-

ing as shown in Figure 5 unless otherwise noted.

18. Control input signals may not be operated with

pulse widths less than

KHKL (MIN).

19. If C and C# are tied HIGH, then K and K# become

the references for C and C# timing parameters.

20. The device will operate at clock frequencies

slower than

KHKH (MAX). See Micron Technical

Note TN-54-02 for more information.

21. Clock phase jitter is the variance from clock rising

edge to the next expected clock rising edge.

22. V

slew rate must be less than 0.1V DC per 50ns

for DLL lock retention. DLL lock time begins once
V

and input clock are stable.

23. Echo clock is tightly controlled to data valid/data

hold. By design, there is a ±0.1ns variation from
echo clock to data. The data sheet parameters
reflect tester guardbands and test setup varia-
tions.

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

Figure 6:

READ/WRITE Timing

NOTE:

1. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, i.e.,

A0 + 1.

2. Outputs are disabled (High-Z) one clock cycle after a NOP.
3. In this example, if address A3 = A4, then data Q40 = D30 and Q42 = D31. Write data is forwarded immediately as

read results.

LD#

R/W#

READ
(burst of 2)

(Note 2)

(Note 1)

(Note 3)

WRITE
(burst of 2)

Q40

tKHKL

tKHK#H

tKHCH

tCHQV

tKLKH

tKHKH

tKHIX

tAVKH tKHAX

tDVKH

tKHDX

tKHCH

NOP

tDVKH

tKHDX

DON'T CARE

UNDEFINED

tCHQX1

tCHQX

tCHQZ

IVKH

tKHKL

tKHK#H

tKLKH

tKHKH

Q00

Q11

Q01

Q10

Qx2

tCHQV

tCQHQV

tCHQX

Q41

D20

D21

D30

D31

NOP

CQ#

tCHCQV

tCHCQX

tCHCQV

tCHCQX

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

IEEE 1149.1 Serial Boundary Scan (JTAG)

The SRAM incorporates a serial boundary scan test

access port (TAP). This port operates in accordance
with IEEE Standard 1149.1-1990 but does not have the
set of functions required for full 1149.1 compliance.
These functions from the IEEE specification are
excluded because their inclusion places an added
delay in the critical speed path of the SRAM. Note that
the TAP controller functions in a manner that does not
conflict with the operation of other devices using
1149.1 fully-compliant TAPs. The TAP operates using
JEDEC-standard 1.8V I/O logic levels.

The SRAM contains a TAP controller, instruction

Disabling The JTAG Feature

It is possible to operate the SRAM without using the

JTAG feature. To disable the TAP controller, TCK must
be tied LOW (V

) to prevent clocking of the device.

TDI and TMS are internally pulled up and may be
unconnected. Alternately, they may be connected to
V

through a pull-up resistor. TDO should be left

unconnected. Upon power-up, the device will come up
in a reset state, which will not interfere with the opera-
tion of the device.

Figure 7:

TAP Controller State Diagram

NOTE:

The 0/1 next to each state represents the value
of TMS at the rising edge of TCK.

Test Access Port (TAP)
Test Clock (TCK)

The test clock is used only with the TAP controller.

All inputs are captured on the rising edge of TCK. All
outputs are driven from the falling edge of TCK.

Test Mode Select (TMS)

The TMS input is used to give commands to the TAP

controller and is sampled on the rising edge of TCK. It
is allowable to leave this ball unconnected if the TAP is
not used. The ball is pulled up internally, resulting in a
logic HIGH level.

Test Data-in (TDI)

The TDI ball is used to serially input information

into the registers and can be connected to the input of
any of the registers. The register between TDI and TDO
is chosen by the instruction that is loaded into the TAP
instruction register. For information on loading the
instruction register, see Figure 7. TDI is internally
pulled up and can be unconnected if the TAP is unused
in an application. TDI is connected to the most signifi-
cant bit (MSB) of any register, as illustrated in Figure 8.

Figure 8:

TAP Controller Block Diagram

NOTE:

X = 106.

TEST-LOGIC

RESET

RUN-TEST/

IDLE

SELECT

DR-SCAN

SELECT

IR-SCAN

CAPTURE-DR

SHIFT-DR

CAPTURE-IR

SHIFT-IR

EXIT1-DR

PAUSE-DR

EXIT1-IR

PAUSE-IR

EXIT2-DR

UPDATE-DR

EXIT2-IR

UPDATE-IR

Bypass Register

Instruction Register

Identification Register

Boundary Scan Register

Selection

Circuitry

Selection

Circuitry

TCK

TMS

TAP CONTROLLER

TDI

TDO

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

Test Data-out (TDO)

The TDO output ball is used to serially clock data-

out from the registers. The output is active depending
upon the current state of the TAP state machine illus-
trated in Figure 8. The output changes on the falling
edge of TCK. TDO is connected to the least significant
bit (LSB) of any register, as depicted in Figure 8.

Performing a TAP RESET

A RESET is performed by forcing TMS HIGH (V

)

for five rising edges of TCK. This RESET does not affect
the operation of the SRAM and may be performed
while the SRAM is operating.

At power-up, the TAP is reset internally to ensure

that TDO comes up in a High-Z state.

TAP Registers

Registers are connected between the TDI and TDO

balls and allow data to be scanned into and out of the
SRAM test circuitry. Only one register at a time can be
selected through the instruction register. Data is seri-
ally loaded into the TDI ball on the rising edge of TCK.
Data is output on the TDO ball on the falling edge of
TCK.

Instruction Register

Three-bit instructions can be serially loaded into

the instruction register. This register is loaded when it
is placed between the TDI and TDO balls, as shown in
Figure 8. Upon power-up, the instruction register is
loaded with the IDCODE instruction. It is also loaded
with the IDCODE instruction if the controller is placed
in a reset state, as described in the previous section.

When the TAP controller is in the Capture-IR state,

the two LSBs are loaded with a binary "01" pattern to
allow for fault isolation of the board-level serial test
data path.

Bypass Register

To save time when serially shifting data through reg-

isters, it is sometimes advantageous to skip certain
chips. The bypass register is a single-bit register that
can be placed between the TDI and TDO balls. This
allows data to be shifted through the SRAM with mini-
mal delay. The bypass register is set LOW (Vss) when
the BYPASS instruction is executed.

Boundary Scan Register

The boundary scan register is connected to all the

input and bidirectional balls on the SRAM. Several no
connect (NC) balls are also included in the scan regis-
ter to reserve balls. The SRAM has a 107-bit-long regis-
ter.

The boundary scan register is loaded with the con-

tents of the RAM I/O ring when the TAP controller is in
the Capture-DR state and is then placed between the
TDI and TDO balls when the controller is moved to the
Shift-DR state. The EXTEST, SAMPLE/PRELOAD, and
SAMPLE Z instructions can be used to capture the
contents of the

I/O

ring.

The Boundary Scan Order table shows the order in

which the bits are connected. Each bit corresponds to
one of the balls on the SRAM package. The MSB of the
register is connected to TDI, and the LSB is connected
to TDO.

Identification (ID) Register

The ID register is loaded with a vendor-specific, 32-

bit code during the Capture-DR state when the
IDCODE command is loaded in the instruction regis-
ter. The IDCODE is hardwired into the SRAM and can
be shifted out when the TAP controller is in the Shift-
DR state. The ID register has a vendor code and other
information described in the Identification Register
Definitions table.

TAP Instruction Set
Overview

Eight different instructions are possible with the

three-bit instruction register. All combinations are
listed in the Instruction Codes table. Three of these
instructions are listed as RESERVED and should not be
used. The other five instructions are described in detail
below.

The TAP controller used in this SRAM is not fully

compliant to the 1149.1 convention because some of
the mandatory 1149.1 instructions are not fully imple-
mented. The TAP controller cannot be used to load
address, data or control signals into the SRAM and
cannot preload the I/O buffers. The SRAM does not
implement the 1149.1 commands EXTEST or INTEST
or the PRELOAD portion of SAMPLE/PRELOAD;
rather, it performs a capture of the I/O ring when these
instructions are executed.

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

EXTEST

EXTEST is a mandatory 1149.1 instruction which is

to be executed whenever the instruction register is
loaded with all 0s. EXTEST is not implemented in this
SRAM TAP controller; therefore, this device is not
1149.1-compliant.

The TAP controller does recognize an all-0 instruc-

tion. When an EXTEST instruction is loaded into the
instruction register, the SRAM responds as if a
SAMPLE/PRELOAD instruction has been loaded.
EXTEST does not place the SRAM outputs (including
CQ and CQ#) in a High-Z state.

IDCODE

The IDCODE instruction causes a vendor-specific,

32-bit code to be loaded into the instruction register. It
also places the instruction register between the TDI
and TDO balls and allows the IDCODE to be shifted
out of the device when the TAP controller enters the
Shift-DR state. The IDCODE instruction is loaded into
the instruction register upon power-up or whenever
the TAP controller is given a test logic reset state.

SAMPLE Z

The SAMPLE Z instruction causes the boundary

scan register to be connected between the TDI and
TDO balls when the TAP controller is in a Shift-DR
state. It also places all SRAM outputs into a High-Z
state.

SAMPLE/PRELOAD

SAMPLE/PRELOAD is a 1149.1 mandatory instruc-

tion. The PRELOAD portion of this instruction is not
implemented, so the device TAP controller is not fully
1149.1-compliant.

Note that since the PRELOAD part of the command

is not implemented, putting the TAP into the Update-
DR state while performing a SAMPLE/PRELOAD
instruction will have the same effect as the Pause-DR
command.

BYPASS

When the BYPASS instruction is loaded in the

instruction register and the TAP is placed in a Shift-DR
state, the bypass register is placed between TDI and
TDO. The advantage of the BYPASS instruction is that
it shortens the boundary scan path when multiple
devices are connected together on a board.

Reserved

These instructions are not implemented but are

reserved for future use. Do not use these instructions.

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

Figure 9: TAP Timing

NOTE:

Timing for SRAM inputs and outputs is congruent with TDI and TDO, respectively, as shown in Figure 9.

NOTE:

CS and

CH refer to the setup and hold time requirements of latching data from the boundary scan register.

2. Test conditions are specified using the load in Figure 10.

TLTH

Test Clock

(TCK)

Test Mode Select

(TMS)

tTHTL

Test Data-Out

(TDO)

tTHTH

Test Data-In

(TDI)

tTHMX

tMVTH

tTHDX

tDVTH

tTLOX

tTLOV

DON'T CARE

UNDEFINED

Table 14: TAP AC Electrical Characteristics

Notes 1, 2; 0°C

£ T

£ +70°C; V

= 1.8V ±0.1V

DESCRIPTION

SYMBOL

MIN

MAX

UNITS

Clock

Clock cycle time

THTH

100

Clock frequency

MHz

Clock HIGH time

THTL

Clock LOW time

TLTH

Output Times

TCK LOW to TDO unknown

TLOX

TCK LOW to TDO valid

TLOV

TDI valid to TCK HIGH

DVTH

TCK HIGH to TDI invalid

THDX

Setup Times

TMS setup

MVTH

Capture setup

Hold Times

TMS hold

THMX

Capture hold

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

TAP AC Test Conditions

Input pulse levels . . . . . . . . . . . . . . . . . . . . . V

to 1.8V

Input rise and fall times. . . . . . . . . . . . . . . . . . . . . . .1ns
Input timing reference levels . . . . . . . . . . . . . . . . . 0.9V
Output reference levels

. . . . . . . . . . . . . . . . . . . . . . . . 0.9V

Test load termination supply voltage . . . . . . . . . . 0.9V

Figure 10:

TAP AC Output Load Equivalent

NOTE:

1. All voltages referenced to V

(GND)

2. This table defines DC values for TAP control and data balls only. The DQ SRAM balls used in JTAG operation will have

the DC values as defined in Table 8, "DC Electrical Characteristics and Operating Conditions," on page 13.

TDO

0.9V

20pF

Z = 50

Table 15: TAP DC Electrical Characteristics and Operating Conditions

Note 2; 0°C

£ T

£ +70°C; V

= 1.8V ±0.1V unless otherwise noted

DESCRIPTION

CONDITIONS

SYMBOL

MIN

MAX

UNITS

NOTES

Input High (Logic 1) Voltage

1.3

+ 0.3

1, 2

Input Low (Logic 0) Voltage

-0.3

0.5

1, 2

Input Leakage Current

£ V

-5.0

5.0

µA

Output Leakage Current

Output(s) disabled,

£ V

-5.0

5.0

µA

Output Low Voltage

OLC

= 100µA

OL1

0.2

1, 2

Output Low Voltage

OLT

= 2mA

OL2

0.4

1, 2

Output High Voltage

OHC

| = 100µA

OH1

1.6

1, 2

Output High Voltage

OHT

| = 2mA

OH2

1.4

1, 2

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

Table 16: Identification Register Definitions

INSTRUCTION FIELD

ALL DEVICES

DESCRIPTION

REVISION NUMBER
(31:29)

000

Revision number.

DEVICE ID
(28:12)

00def0wx0t0q0b0s0

def = 010 for 36Mb density
def = 001 for 18Mb density
wx = 11 for x36 width
wx = 10 for x18 width
wx = 01 for x8 width
t = 1 for DLL version
t = 0 for non-DLL version
q = 1 for QDR
q = 0 for DDR
b = 1 for 4-word burst
b = 0 for 2-word burst
s = 1 for separate I/O
s = 0 for common I/O

MICRON JEDEC ID
CODE (11:1)

00000101100

Allows unique identification of SRAM vendor.

ID Register Presence
Indicator (0)

Indicates the presence of an ID register.

Table 17: Scan Register Size

BIT SIZE

Instruction

Bypass

Boundary Scan

107

Table 18: Instruction Codes

INSTRUCTION

CODE

DESCRIPTION

EXTEST

000

Captures I/O ring contents. Places the boundary scan register between TDI and TDO. This
instruction is not 1149.1-compliant.

IDCODE

001

Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operations.

SAMPLE Z

010

Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces
all SRAM output drivers to a High-Z state.

RESERVED

011

Do Not Use: This instruction is reserved for future use.

SAMPLE/
PRELOAD

100

Captures I/O ring contents. Places the boundary scan register between TDI and TDO. This
instruction does not implement 1149.1 preload function and is therefore not 1149.1-
compliant.

RESERVED

101

Do Not Use: This instruction is reserved for future use.

RESERVED

110

Do Not Use: This instruction is reserved for future use.

BYPASS

111

Places the bypass register between TDI and TDO. This operation does not affect
SRAM operations.

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

Table 19: Boundary Scan (Exit) Order

BIT#

FBGA BALL

BIT#

FBGA BALL

BIT#

FBGA BALL

10D

10C

11D

11B

11C

11P

10B

10P

11A

10N

10A

10M

11N

11L

11M

10L

11K

10K

10J

11J

11H

100

10G

101

102

11F

103

11G

104

105

10F

106

11E

107

10E

8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900

E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992

Micron, the M logo, and the Micron logo are trademarks and/or service marks of of Micron Technology, Inc.

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub 3/03

Figure 11:

165-Ball FBGA

NOTE:

1. All dimensions are in millimeters.

Data Sheet Designation

No Marking: This data sheet contains minimum and maximum limits specified over the complete power

supply and temperature range for production devices. Although considered final, these specifications are sub-
ject to change, as further product development and data characterization sometimes occur.

10.00

14.00

15.00 ±0.10

1.00

TYP

1.00

TYP

5.00 ±0.05

13.00 ±0.10

PIN A1 ID

BALL A1

MOLD COMPOUND: EPOXY NOVOLAC

SUBSTRATE: PLASTIC LAMINATE

6.50 ±0.05

7.00 ±0.05

7.50 ±0.05

1.20 MAX

SOLDER BALL MATERIAL: EUTECTIC 63% Sn, 37% Pb
SOLDER BALL PAD: Ø .33mm

SOLDER BALL DIAMETER REFERS
TO POST REFLOW CONDITION. THE
PRE-REFLOW DIAMETER IS Ø 0.40

SEATING PLANE

0.85 ±0.075

0.12

165X Ø 0.45

BALL A11

2 MEG

8, 1 MEG

18, 512K

1.8V V

, HSTL, DDR SIO SRAM

18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V

, HSTL, DDR SIO SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT57W1MH18C_H.fm Rev. H, Pub. 3/03

Document Revision History

Rev. H, Pub 3/03 ..............................................................................................................................................................3/03

· Updated JTAG Section
· Removed Preliminary Status

Rev. G, Pub 2/03...............................................................................................................................................................2/03

· Added definitive notes to Figure 3
· Added definitive note to Table 9
· Added definitive note concerning bit# 64 to Table 19
· Removed Errata specifications
· Updated AC timing values with new codevelopment values
· Updated JTAG description to reflect 1149.1 specification compliance with EXTEST feature
· Added definitive note concerning SRAM (DQ) I/O balls used for JTAG DC values and timing
· Changed process information in header to die revision indicator
· Updated Thermal Resistance Values to Table 12:

= 4.5 TYP; 5.5 MAX

= 6 TYP; 7 MAX

= 5.5 TYP; 6.5 MAX

· Updated Thermal Resistance values to Table 12:

= 19.4 TYP

= 1.0 TYP

= 9.6 TYP

· Added T

£ +95°C to Table 13

· Modified Figure 2 regarding depth, configuration, and byte controls

· Added definitive notes regarding I/O behavior during JTAG operation
· Added definitive notes regarding I

test conditions for read to write ratio

· Removed note regarding AC derating information for full I/O range
· Remove references to JTAG scan chain logic levels being at logic zero for NC pins in Tables 5 and 19
· Revised ball description for NC balls:

These balls are internally connected to the die, but have no function and may be left not connected to the
board to minimize ball count.

Rev. 6, Pub 9/02 ...............................................................................................................................................................9/02

· Reverted data sheet to PRELIMINARY designation

Rev. 5, Pub. 9/02, ADVANCE ...........................................................................................................................................9/02

· Added new Output Times values
· Added Errata to back of data sheet
· emoved ADVANCE designation
· Removed T

references

Rev. 4, Pub. 8/02, ADVANCE ...........................................................................................................................................8/02

· Updated format

Rev. 3, Pub. 12/01, ADVANCE .......................................................................................................................................12/01

· Changed AC timing

Rev. 2, Pub. 11/01, ADVANCE .......................................................................................................................................11/01

· New ADVANCE data sheet

Document Outline

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MT57W512H36C

Document Outline

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MT57W512H36C