HAL 1000

ADVANCE INFORMATION

Micronas

Contents

Page

Section

Title

Introduction

1.1.

Major Applications

1.2.

Features

1.3.

Marking Code

1.4.

Operating Junction Temperature Range (T

)

1.5.

Hall Sensor Package Codes

1.6.

Solderability

1.7.

Pin Connections and Short Descriptions

Functional Description

2.1.

General Function

2.2.

Overview of DSP and EEPROM

2.3.

Function of the DSP

2.4.

General Calibration Procedure

2.5.

Example: Calibration of a Position Switch

Specifications

3.1.

Outline Dimensions

3.2.

Dimensions of Sensitive Area

3.3.

Position of Sensitive Area

3.4.

Absolute Maximum Ratings

3.5.

Recommended Operating Conditions

3.6.

Electrical and Magnetic Characteristics

3.7.

Typical Characteristics

Application Notes

4.1.

Application Circuit

4.2.

Use of two HAL 1000 in Parallel

4.3.

Temperature Compensation

4.4.

Ambient Temperature

4.5.

EMC and ESD

Programming of the Sensor

5.1.

Definition of Programming Pulses

5.2.

Definition of the Telegram

5.3.

Telegram Codes

5.4.

Number Formats

5.5.

5.6.

Programming Information

Data Sheet History

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HAL 1000

Micronas

Programmable Hall Switch

1. Introduction

The HAL 1000 is a programmable Hall switch. The
major sensor characteristics, the two switching points
B

and B

OFF

, are programmable for the application.

The sensor can be programmed to be unipolar or
latching, sensitive to the magnetic north pole or sensi-
tive to the south pole, with normal or with an electri-
cally inverted output signal. Several examples are
shown in Fig. 2�4 through Fig. 2�7.

The HAL 1000 is based on the HAL 80x family and fea-
tures a temperature-compensated Hall plate with
choppered offset compensation, an A/D converter, dig-
ital signal processing, a push-pull output stage, an
EEPROM memory with redundancy and lock function
for the calibration data, a serial interface for program-
ming the EEPROM, and protection devices at all pins.
Internal digital signal processing is of great benefit
because analog offsets, temperature shifts, and
mechanical stress effects do not degrade the sensor
accuracy.

The HAL 1000 is programmable by modulating the
supply voltage. No additional programming pin is
needed. Programming is simplified through the use of
a 2-point calibration. Calibration is accomplished by
adjusting the sensor output directly to the input signal.
Individual adjustment of each sensor during the cus-
tomer's manufacturing process is possible. With this
calibration procedure, the tolerances of the sensor, the
magnet, and the mechanical positioning can be com-
pensated for the final assembly. This offers a low-cost
alternative for all applications that presently require
mechanical adjustment or other system calibration.

In addition, the temperature compensation of the Hall
IC can be tailored to all common magnetic materials by
programming first and second order temperature coef-
ficients of the Hall sensor sensitivity. This enables
operation over the full temperature range with constant
switching points.

The calculation of the individual sensor characteristics
and the programming of the EEPROM memory can
easily be done with a PC and the application kit from
Micronas.

The sensor is designed and produced in sub-micron
CMOS technology for use in hostile industrial and
automotive applications with nominal supply voltage of
5 V in the ambient temperature range from

40 �C up

to 150 �C.

The HAL 1000 is available in the leaded package
TO-92UT.

1.1. Major Applications

Due to the sensor's versatile programming characteris-
tics, the HAL 1000 is the optimal system solution for
applications which require very precise contactless
switching:

� end point detection

� level switch (e.g. liquid level)

� electronic fuse (current measurement)

1.2. Features

� high-precision Hall switch with programmable

switching points and switching behavior

� switching points programmable from

150 mT up to

150 mT in steps of 0.5% of the magnetic field range

� multiple programmable magnetic characteristics in a

non-volatile memory (EEPROM) with redundancy
and lock function

� temperature characteristics are programmable for

matching all common magnetic materials

� programming through a modulation of the supply

voltage

� to enable programming of an individual sensor

amongst several sensors parallel to the same sup-
ply voltage, each sensor can be selected via its out-
put pin

� operates from

40 �C up to 150 �C

ambient temperature

� operates from 4.5 V up to 5.5 V supply voltage in

specification and functions up to 8.5 V

� operates with static magnetic fields and dynamic

magnetic fields up to 2 kHz

� magnetic characteristics extremely robust against

mechanical stress effects

� overvoltage and reverse-voltage protection at all

pins

� short-circuit protected push-pull output

� EMC and ESD optimized design

HAL 1000

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Micronas

1.3. Marking Code

The HAL 1000 has a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.

1.4. Operating Junction Temperature Range (T

)

The Hall sensors from Micronas are specified to the
chip temperature (junction temperature T

A: TJ =

40 �C to +170 �C

K: TJ =

40 �C to +140 �C

E: TJ =

40 �C to +100 �C

The relationship between ambient temperature (T

)

and junction temperature is explained in Section 4.4.
on page 17.

1.5. Hall Sensor Package Codes

Example: HAL1000UT-K

Type:

1000

Package:

TO-92UT

Temperature Range:

40�C to +140�C

Hall sensors are available in a wide variety of packag-
ing versions and quantities. For more detailed informa-
tion, please refer to the brochure: "Ordering Codes for
Hall Sensors".

1.6. Solderability

Package TO-92UT: according to IEC68-2-58

During soldering reflow processing and manual
reworking, a component body temperature of 260 �C
should not be exceeded.

Components stored in the original packaging should
provide a shelf life of at least 12 months, starting from
the date code printed on the package labels, even in
environments as extreme as 40 �C and 90% relative
humidity.

1.7. Pin Connections and Short Descriptions

Fig. 1�1: Pin configuration

Type

Temperature Range

HAL 1000

1000A

1000K

1000E

HALxxxxPA-T

Temperature Range: A, K, or E

Package: UT for TO-92UT

Type: 1000

Pin
No.

Pin Name

Type

Short Description

Supply Voltage and
Programming Pin

GND

Ground

OUT

Push-Pull Output
and Selection Pin

OUT

GND

ADVANCE INFORMATION

HAL 1000

Micronas

2. Functional Description

2.1. General Function

The HAL 1000 is a monolithic integrated circuit which
provides a digital output signal. The sensor is based
on the HAL 80x design. All blocks before the compara-
tor are identical to the HAL 805 and the signal process-
ing is very similar.

The Hall plate is sensitive to magnetic north and south
polarity. The external magnetic field component per-
pendicular to the branded side of the package gener-
ates a Hall voltage. This voltage is converted to a digi-
tal value and processed in the Digital Signal
Processing Unit (DSP) according to the settings of the
EEPROM registers. The function and the parameters
for the DSP are explained in Section 2.2. on page 6.

The sensor characteristics depend on the LOCK regis-
ter:

� As long as the LOCK register is not set, the switch-

ing points and other characteristics can be adjusted
by programming the EEPROM registers. The IC is
addressed by modulating the supply voltage (see
Fig. 2�1). Between 4.5 V and 5.5 V, the sensor out-
put provides the switching signal according to the
magnetic field. If the voltage rises above 6 V, the
sensor detects a command, reads or writes the
memory, and answers with a digital telegram on the
output pin. At supply voltages of 6 V or more, the
sensor does not provide the switching function.

� Setting the LOCK register disables the programming

of the EEPROM memory permanently. This register
cannot be reset. The sensor operates from 4.5 V up
to 5.5 V in specification and function is typically
given up to 8.5 V.

Several sensors in parallel to the same supply and
ground line can be programmed individually. The
selection of each sensor is done via a 5 V pulse on its
output pin.

Internal temperature compensation circuitry and the
choppered offset compensation enables operation
over the full temperature range with minimal changes
of the switching points. The circuitry also rejects offset
shifts due to mechanical stress from the package. The
non-volatile memory consists of redundant EEPROM
cells. In addition, the HAL 1000 is equipped with
devices for overvoltage and reverse-voltage protection
at all pins.

Fig. 2�1: Programming with V

modulation

Fig. 2�2: HAL 1000 block diagram

)

HAL

1000

GND

OUT

digital

protocol

output

Internally

Temperature

Oscillator

Switched

100

Digital

OUT

GND

Supply

EEPROM Memory

Lock Control

Digital

stabilized
Supply and
Protection
Devices

Dependent
Bias

Protection
Devices

Hall Plate

Signal
Processing

Level
Detection

Output

A/D
Converter

HAL 1000

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Micronas

Fig. 2�3: Details of EEPROM and Digital Signal Processing

2.2. Overview of DSP and EEPROM

The DSP is the main part of the sensor and performs
the signal processing. The parameters for the DSP are
stored in the EEPROM registers. The details are
shown in Fig. 2�3.

Terminology:

SENSITIVITY: name of the register or register value

Sensitivity:

name of the parameter

EEPROM Registers:

The EEPROM registers include three groups:

Group 1 contains the registers for the adaption of the
sensor to the magnetic system: MODE for selecting
the magnetic field range and filter frequency, TC and
TCSQ for the temperature characteristics of the mag-
netic sensitivity and thereby for the switching points.

Group 2 contains the registers for defining the switch-
ing points: SENSITIVITY, VOQ, LOW-LEVEL, and
HIGH-LEVEL.

The comparator compares the processed signal volt-
age with the reference values Low-Level and High-
Level.

The output switches on (low) if the signal voltage is
higher than the High-Level, and switches off (high) if
the signal falls below the Low-Level. Several examples
of different switching characteristics are shown in
Fig. 2�4 to Fig. 2�7.

� The parameter V

(Output Quiescent Voltage) cor-

responds to the signal voltage at B = 0 mT.

� The parameter Sensitivity defines the magnetic sen-

sitivity:

� The signal voltage can be calculated as:

Therefore, the switching points are programmed by
setting the SENSITIVITY, VOQ, LOW-LEVEL, and
HIGH-LEVEL registers. The available Micronas soft-
ware calculates the best parameter set respecting the
ranges of each register.

Group 3 contains the Micronas registers and LOCK for
the locking of all registers. The Micronas registers are
programmed and locked during production and are
read-only for the customer. These registers are used
for oscillator frequency trimming, A/D converter offset
compensation, and several other special settings.

MODE Register

FILTER

6 bit

TCSQ

5 bit

SENSI-

14 bit

VOQ

11 bit

LOW-

10 bit

11 bit

LOCKR

1 bit

3 bit

RANGE

3 bit

EEPROM Memory

A/D
Converter

Digital
Filter

Multiplier

Adder

Comparator

Digital Signal Processing

ADC-READOUT Register

14 bit

Digital

TIVITY

LEVEL

HIGH-
LEVEL

Output

Micronas

Registers

Lock
Control

Signal

Sensitivity =

Signal

Sensitivity

�

B + V

HAL 1000

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Micronas

2.3. Function of the DSP

An external magnetic field generates a Hall voltage at
the Hall plate. The ADC converts this amplified Hall
voltage (operates with magnetic north and south poles
at the branded side of the package) to a digital value.
Positive values correspond to a magnetic north pole on
the branded side of the package. The digital signal is
filtered in the internal low-pass filter and is then read-
able in the ADC-READOUT register. Depending on the
programmable magnetic range of the Hall IC, the oper-
ating range of the A/D converter is from

30 mT ...

+30 mT up to

150 mT ... +150 mT.

The ADC-READOUT at any given magnetic field
depends on the programmed magnetic field range and
also on the filter frequency. Fig. 2�8 shows the typical
ADC-READOUT values for the different magnetic field
ranges with the filter frequency set to 2 kHz.

The relationship between the minimum and maximum
ADC-READOUT values and the filter frequency setting
can be seen in the following table.

Note: The maximum and minimum ADC-READOUT
must not be exceeded during calibration of the sensor
and operation near the switching points.

Range

The RANGE bits are the three lowest bits of the MODE
register; they define the magnetic field range of the
A/D converter.

Filter

The FILTER bits are the three highest bits of the
MODE register; they define the

3 dB frequency of the

digital low pass filter.

�2000

�1500

�1000

�500

500

1000

1500

2000

�200�150�100 �50

50 100 150 200 mT

ADC-
READOUT

Range 150 mT

Filter = 2 kHz

Range 90 mT

Range 60 mT

Range 30 mT

Fig. 2�8: Typical ADC-READOUT
versus magnetic field for filter = 2 kHz

Filter Frequency

ADC-READOUT RANGE

80 Hz

3968...3967

160 Hz

1985...1985

500 Hz

5292...5290

1 kHz

2646...2645

2 kHz

1512...1511

Magnetic Field Range

RANGE

30 mT...30 mT

40 mT...40 mT

60 mT...60 mT

75 mT...75 mT

80 mT...80 mT

90 mT...90 mT

100 mT...100 mT

150 mT...150 mT

3 dB Frequency

FILTER

80 Hz

160 Hz

500 Hz

1 kHz

2 kHz

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HAL 1000

Micronas

TC and TCSQ

The temperature dependence of the magnetic sensitiv-
ity can be adapted to different magnetic materials in
order to compensate for the change of the magnetic
strength with temperature. The adaption is done by
programming the TC (Temperature Coefficient) and
the TCSQ registers (Quadratic Temperature Coeffi-
cient). Thereby, the slope and the curvature of the tem-
perature dependence of the magnetic sensitivity can
be matched to the magnet and the sensor assembly.
As a result, the output voltage characteristic can be
stabilized over the full temperature range. The sensor
can compensate for linear temperature coefficients
ranging from about

3100 ppm/K up to 400 ppm/K and

quadratic coefficients from about

5 ppm/K� to

5 ppm/K�. Please refer to Section 4.3. on page 16 for
the recommended settings for different linear tempera-
ture coefficients.

Sensitivity

The SENSITIVITY register contains the parameter for
the multiplier in the DSP. Sensitivity is programmable
between

4 and 4 in steps of 0.00049. Sensitivity = 1

corresponds to an increase of the signal voltage by
V

if the ADC-READOUT increases by 2048.

VOQ

The VOQ register contains the parameter for the adder
in the DSP. V

is the signal voltage without external

magnetic field (B = 0 mT, respectively ADC-READOUT
= 0) and programmable from

up to V

. For V

= 5 V, the register can be changed in steps of 4.9 mV.

Note: If V

is programmed to a negative voltage, the

maximum signal voltage is limited to:

Reference Levels

The LOW-LEVEL and HIGH-LEVEL registers contain
the reference values of the comparator.

The Low-Level is programmable between 0 V and
V

/2. The register can be changed in steps of

2.44 mV. The High-Level is programmable between
0 V and V

in steps of 2.44 mV.

The four parameters Sensitivity, V

, Low-Level, and

High-Level define the switching points B

and B

OFF

For calibration in the system environment, a 2-point
adjustment procedure (see Section 2.4.) is recom-
mended. The suitable parameter set for each sensor
can be calculated individually by this procedure.

LOCKR

By setting this 1-bit register, all registers will be locked,
and the sensor will no longer respond to any supply
voltage modulation.

Warning: The LOCKR register cannot be reset!

ADC-READOUT

This 14-bit register delivers the actual digital value of
the applied magnetic field after filtering but before the
signal processing. This register can be read out and is
the basis for the calibration procedure of the sensor in
the system environment.

2.4. General Calibration Procedure

For calibration in the system environment, the applica-
tion kit from Micronas is recommended. It contains the
hardware for the generation of the serial telegram for
programming and the corresponding software for the
input or calculating of the register values.

In this section, the programming of the sensor using
this tool is explained. Please refer to Section 5. on
page 18 for information about programming without
this tool.

For the individual calibration of each sensor in the cus-
tomer`s application, a two-point adjustment is recom-
mended (see Fig. 2�9 for an example). When using
the application kit, the calibration can be done in three
steps:

Step 1: Input of the registers which need not be
adjusted individually

The magnetic circuit, the magnetic material with its
temperature characteristics, and the filter frequency,
are given for this application.

Therefore, the values of the following registers should
be identical for all sensors in the application.

� FILTER

(according to the maximum signal frequency)
The 500 Hz range is recommended for highest
accuracy.

� RANGE

(according to the maximum magnetic field at the
sensor position)

� TC and TCSQ

(depends on the material of the magnet and the
other temperature dependencies of the application)

Write the appropriate settings into the HAL 1000 regis-
ters.

Signal max

= V

+ V

HAL 1000

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Micronas

Step 2: Calculation of the Sensor Parameters

Fig. 2�9 shows the typical characteristics for a contact-
less switch. There is a mechanical range where the
sensor must be switched high and where the sensor
must be switched low.

Fig. 2�9: Characteristics of a position switch

Set the system to the calibration point where the sen-
sor output must be high, and press the key "Readout
B

OFF

". The result is the corresponding ADC-READ-

OUT value.

Note: The magnetic south pole on the branded side
generates negative ADC-READOUT values, the north
polarity positive values.

Then, set the system to the calibration point where the
sensor output must be low, press the key "Readout
B

" and get the second ADC-READOUT value.

Now, adjust the hysteresis to the desired value. The
hysteresis is the difference between the switching
points and suppresses oscillation of the output signal.
With 100% hysteresis, the sensor will switch low and
high exactly at the calibration points. A lower value will
adjust the switching points closer together. Fig. 2�9
shows an example with 80% hysteresis.

By pressing the key "calibrate and store", the software
will calculate the corresponding parameters for Sensi-
tivity, VOQ, Low-Level, High-Level and store these val-
ues in the EEPROM.

This calibration must be done individually for each sen-
sor.

The sensor is now calibrated for the customer applica-
tion. However, the programming can be changed again
and again if necessary.

Step 3: Locking the Sensor

The last step is activating the LOCK function with the
"lock" key. The sensor is now locked and does not
respond to any programming or reading commands.

Warning: The LOCKR register cannot be reset!

2.5. Example: Calibration of a Position Switch

The following description explains the calibration pro-
cedure using a position switch as an example.

� The mechanical switching points are given.

� temperature coefficient of the magnet:

500 ppm/K

Step 1: Input of the registers which need not be
adjusted individually

The register values for the following registers are given
for all sensors in the application:

� FILTER

Select the filter frequency: 500 Hz

� RANGE

Select the magnetic field range: 30 mT

� TC

For this magnetic material: 6

� TCSQ

For this magnetic material: 14

Enter these values in the software, and use the "write
and store" command to store these values perma-
nently in the registers.

Step 2: Calculation of the Sensor Parameters

Set the system to the calibration point where the sen-
sor output must be high, and press "Readout B

OFF

Set the system to the calibration point where the sen-
sor output must be low, and press "Readout B

Now, adjust the hysteresis to 80%, and press the key
"calibrate and store".

Step 3: Locking the Sensor

The last step is activating the LOCK function with the
"LOCK" command. The sensor is now locked and does
not respond to any programming or reading com-
mands.

Warning: The LOCKR register cannot be reset!

Sensor

switched on

OUT

position

Sensor

switched off

Calibration points

Sensor

switched on

Hysteresis

(here 80 %)

HAL 1000

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Micronas

3.4. Absolute Maximum Ratings

Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in
the "Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute
maximum ratings conditions for extended periods may affect device reliability.

3.5. Recommended Operating Conditions

Symbol

Parameter

Pin No.

Min.

Max.

Unit

Supply Voltage

8.5

Supply Voltage

14.4

1) 2)

14.4

1) 2)

Reverse Supply Current

Current through Protection Device

1 or 3

300

OUT

Output Voltage

8.5

14.4

3) 2)

OUT

Excess of Output Voltage
over Supply Voltage

3,1

OUT

Continuous Output Current

Output Short Circuit Duration

min

Storage Temperature Range

150

�C

Junction Temperature Range

170

150

�C
�C

as long as T

Jmax

is not exceeded

t < 10 min (V

DDmin

15 V for t < 1 min, V

DDmax

= 16 V for t < 1 min)

as long as T

Jmax

is not exceeded, output is not protected to external 14 V-line (or to

14 V)

t < 2 ms

t < 1000 h

internal protection resistor = 100

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Supply Voltage

4.5

5.5

OUT

Continuous Output Current

Load Resistor

Load Capacitance

0.33

1000

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HAL 1000

Micronas

3.6. Electrical and Magnetic Characteristics

at T

40 �C to +170 �C, V

= 4.5 V to 5.5 V, after programming, as not otherwise specified in Conditions.

Typical Characteristics for T

= 25 �C and V

= 5 V.

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Conditions

Supply Current
over Temperature Range

DDZ

Overvoltage Protection
at Supply

17.5

= 25 mA, T

= 25 �C, t = 20 ms

Overvoltage Protection
at Output

19.5

= 10 mA, T

= 25 �C, t = 20 ms

OUTH

Output High Voltage

tbd

4.8

= 5 V,

1 mA

OUT

1mA

OUTL

Output Low Voltage

0.2

tbd

= 5 V,

1 mA

OUT

1mA

ADC

Internal ADC Frequency

120

128

140

kHz

= 25 �C

ADC

Internal ADC Frequency over
Temperature Range

110

128

150

kHz

= 4.5 V to 8.5 V

r(O)

Response Time of Output

5
4
2
1

10
8
4
2

ms
ms
ms
ms

3 dB Filter frequency = 80 Hz
3 dB Filter frequency = 160 Hz
3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 2 kHz
C

= 10 nF, time from 10% to 90% of

final output voltage for a steplike
signal B

step

from 0 mT to B

max

d(O)

Delay Time of Output

0.1

0.5

= 10 nF

POD

Power-Up Time (Time to reach
stabilized Output Voltage)

6
5
3
2

11
9
5
3

ms
ms
ms
ms

3 dB Filter frequency = 80 Hz
3 dB Filter frequency = 160 Hz
3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 2 kHz
C

= 10 nF, 90% of V

OUT

Offset

Magnetic Offset

B = 0 mT, I

OUT

= 0 mA, T

= 25 �C

Offset

Magnetic Offset Change
due to T

�

T/K

B = 0 mT, I

OUT

= 0 mA

Small Signal Bandwidth (

3 dB)

kHz

< 10 mT;

3 dB Filter frequency = 2 kHz

thJA

TO-92UT

Thermal Resistance Junction to
Soldering Point

150

200

K/W

HAL 1000

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Micronas

3.7. Typical Characteristics

�20

�15

�10

�5

�15 �10

�5

20 V

= �40

�

= 25

�

=150

�

Fig. 3�2: Typical current consumption
versus supply voltage

�50

100

150

200

�

= 5 V

Fig. 3�3: Typical current consumption
versus ambient temperature

�1.5

�1.0

�0.5

0.0

0.5

1.0

1.5 mA

OUT

= 25

�

= 5 V

Fig. 3�4: Typical current consumption
versus output current

100

120

�50

100

150

200

�

1/sensitivity

TC = 16, TCSQ = 8

TC = 0, TCSQ = 12

TC = �20, TCSQ = 12

TC = �31, TCSQ = 0

Fig. 3�5: Typical 1/sensitivity
versus ambient temperature

HAL 1000

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Micronas

4. Application Notes

4.1. Application Circuit

For EMC protection, it is recommended to connect one
ceramic 4.7 nF capacitor between ground and the sup-
ply voltage, and between ground and the output pin. In
addition, the input of the controller unit should be
pulled-down with a resistor of 10 k

or more and a

ceramic 4.7 nF capacitor.

Warning:
Please note that during programming, the sensor will
be supplied repeatedly with the programming voltage
of 12 V for 100 ms. All components connected to the
V

line at this time must be able to resist this voltage.

Fig. 4�1: Recommended application circuit

4.2. Use of two HAL 1000 in Parallel

Two different HAL 1000 sensors which are operated in
parallel to the same supply and ground line can be pro-
grammed individually. In order to select the IC which
should be programmed, both Hall ICs are inactivated
by the "Deactivate" command on the common V

supply line. Then, the appropriate IC is activated by an
"Activate" pulse on its output. Only the activated sen-
sor will react to all following read, write, and program
commands. If the second IC has to be programmed,
the "Deactivate" command is sent again, and the sec-
ond IC can be selected.

Fig. 4�2: Parallel operation of two HAL 1000

Also the parallel operation and individual programming
of the HAL 1000 with the HAL 805, HAL 810 and fol-
lowing is possible. Please note that the HAL 800 does
not support the individual selection of the sensor.

4.3. Temperature Compensation

The relationship between the temperature coefficient
of the magnet and the corresponding TC and TCSQ
codes for linear compensation is given in the following
table. In addition to the linear change of the magnetic
field with temperature, the curvature can be adjusted
as well. For this purpose, other TC and TCSQ combi-
nations are required which are not shown in the table.
Please contact Micronas for more detailed information
on this higher order temperature compensation.

The HAL 800, HAL 805 and HAL 1000 contain the
same temperature compensation circuits. If an optimal
setting for the HAL 80x is already available, the same
settings may be used for the HAL 1000.

OUT

GND

4.7 nF

HAL1000

10 k

�

4.7 nF

HAL 1000

GND

10 nF

HAL 1000

4.7 nF

Sensor A

Sensor B

OUT B & Select B

OUT A & Select A

Temperature
Coefficient of
Magnet (ppm/K)

TCSQ

400

300

200

100

130

170

200

240

280

320

360

410

450

500

550

600

650

ADVANCE INFORMATION

HAL 1000

Micronas

4.4. Ambient Temperature

Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature T

) is higher

than the temperature outside the package (ambient
temperature T

= T

At static conditions, the following equation is valid:

T = I

* V

* R

thJA

For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
I

and R

, and the max. value for V

from the appli-

cation.

For V

= 5.5 V, R

= 200 K/W and I

= 10 mA the

temperature difference

T = 11 K.

For all sensors, the junction temperature T

is speci-

fied. The maximum ambient temperature T

Amax

can be

calculated as:

Amax

= T

Jmax

4.5. EMC and ESD

The HAL 1000 is designed for a stabilized 5 V supply.
Interferences and disturbances conducted along the
12 V onboard system (product standards DIN40839
part 1 or ISO 7637 part 1) are not relevant for these
applications.

For applications with disturbances by capacitive or
inductive coupling on the supply line or radiated distur-
bances, the application circuit shown in Fig. 4�1 is rec-
ommended.

700

750

810

860

910

960

1020

1070

1120

1180

1250

1320

1380

1430

1500

1570

1640

1710

1780

1870

1950

2030

2100

2180

2270

2420

2500

2600

2700

2800

2900

3000

3100

Temperature
Coefficient of
Magnet (ppm/K)

TCSQ

HAL 1000

ADVANCE INFORMATION

Micronas

5. Programming of the Sensor

5.1. Definition of Programming Pulses

The sensor is addressed by modulating a serial tele-
gram on the supply voltage. The sensor answers with a
serial telegram which is available on the output pin.

The bits in the serial telegram have a different bit time
for the V

-line and the output. The bit time for the

-line is defined through the length of the Sync Bit

at the beginning of each telegram. The bit time for the
output is defined through the Acknowledge Bit.

A logical "0" is coded as no voltage change within the
bit time. A logical "1" is coded as a voltage change
between 50% and 80% of the bit time. After each bit, a
voltage change occurs.

5.2. Definition of the Telegram

Each telegram starts with the Sync Bit (logical 0), 3
bits for the Command (COM), the Command Parity Bit
(CP), 4 bits for the Address (ADR), and the Address
Parity Bit (AP).

There are 4 kinds of telegrams:

� Write a register (see Fig. 5�2)

After the AP Bit, follow 14 Data Bits (DAT) and the
Data Parity Bit (DP). If the telegram is valid and the
command has been processed, the sensor answers
with an Acknowledge Bit (logical 0) on the output.

� Read a register (see Fig. 5�3)

After evaluating this command, the sensor answers
with the Acknowledge Bit, 14 Data Bits, and the
Data Parity Bit on the output.

� Programming the EEPROM cells (see Fig. 5�4)

After processing this command, the sensor answers
with the Acknowledge Bit. After the delay time t

the supply voltage rises up to the programming volt-
age.

� Activate a sensor (see Fig. 5�5))

If more than one sensor is connected to the supply
line, selection can be done by first deactivating all
sensors. The output of all sensors will be pulled to
ground by the internal 10 k

resistors. With an Acti-

vate pulse on the appropriate output pin, an individ-
ual sensor can be selected. All following commands
will only be accepted from the activated sensor.

Fig. 5�1: Definition of logical 0 and 1 bit

logical 0

DDH

DDL

logical 1

DDH

DDL

Table 5�1: Telegram parameters

Symbol

Parameter

Pin

Min.

Typ.

Max.

Unit

Remarks

DDL

Supply Voltage for Low Level
during Programming

5.6

DDH

Supply Voltage for High Level
during Programming

6.8

8.0

8.5

Rise time

0.05

Fall time

0.05

Bit time on V

1.7

1.75

1.8

is defined through the Sync Bit

pOUT

Bit time on output pin

pOUT

is defined through the

Acknowledge Bit

Voltage Change for logical 1

1, 3

% of t

or t

pOUT

DDPROG

Supply Voltage for
Programming the EEPROM

11.95

12.1

PROG

Programming Time for EEPROM

100

105

ADVANCE INFORMATION

HAL 1000

Micronas

Fig. 5�2: Telegram for coding a Write command

Fig. 5�3: Telegram for coding a Read command

Fig. 5�4: Telegram for coding the EEPROM programming

Fig. 5�5: Activate pulse

Rise time of programming voltage

0.2

0.5

Fall time of programming voltage

Delay time of programming voltage
after Acknowledge

0.5

0.7

act

Voltage for an Activate pulse

act

Duration of an Activate pulse

0.05

0.1

0.2

Table 5�1: Telegram parameters, continued

Symbol

Parameter

Pin

Min.

Typ.

Max.

Unit

Remarks

Sync

COM

ADR

DAT

Acknowledge

OUT

WRITE

Sync

COM

ADR

DAT

Acknowledge

OUT

READ

Sync

COM

ADR

PROG

Acknowledge

OUT

ERASE, PROM, LOCK, and LOCKI

DDPROG

ACT

OUT

ACT

HAL 1000

ADVANCE INFORMATION

Micronas

5.3. Telegram Codes

Sync Bit

Each telegram starts with the Sync Bit. This logical "0"
pulse defines the exact timing for t

Command Bits (COM)

The Command code contains 3 bits and is a binary
number. Table 5�2 shows the available commands and
the corresponding codes for the HAL 1000.

Command Parity Bit (CP)

This parity bit is "1" if the number of zeros within the 3
Command Bits is uneven. The parity bit is "0", if the
number of zeros is even.

Address Bits (ADR)

The Address code contains 4 bits and is a binary num-
ber. Table 5�3 shows the available addresses for the
HAL 1000 registers.

Address Parity Bit (AP)

This parity bit is "1" if the number of zeros within the 4
Address bits is uneven. The parity bit is "0" if the num-
ber of zeros is even.

Data Bits (DAT)

The 14 Data Bits contain the register information.

The registers use different number formats for the Data
Bits. These formats are explained in Section 5.4.

In the Write command, the last bits are valid. If, for
example, the TC register (6 bits) is written, only the last
6 bits are valid.

In the Read command, the first bits are valid. If, for
example, the TC register (6 bits) is read, only the first 6
bits are valid.

Data Parity Bit (DP)

This parity bit is "1" if the number of zeros within the
binary number is even. The parity bit is "0" if the num-
ber of zeros is uneven.

Acknowledge

After each telegram, the output answers with the
Acknowledge signal. This logical "0" pulse defines the
exact timing for t

pOUT

Table 5�2: Available commands

Command

Code

Explanation

READ

read a register

WRITE

write a register

PROM

program all nonvolatile registers (except the lock bits)

ERASE

erase all nonvolatile registers (except the lock bits)

LOCKI

lock Micronas lockable register

LOCK

lock the whole device and switch permanently to the analog-mode

Please note:
The Micronas lock bit (LOCKI) has already been set during production and cannot be reset.

ADVANCE INFORMATION

HAL 1000

Micronas

5.4. Number Formats

Binary number:

The most significant bit is given as first, the least signif-
icant bit as last digit.

Example:

101001

represents 41 decimal.

Signed binary number:

The first digit represents the sign of the following
binary number (1 for negative, 0 for positive sign).

Example:

0101001

represents +41 decimal

1101001

represents

41 decimal

Two-complementary number:

The first digit of positive numbers is "0", the rest of the
number is a binary number. Negative numbers start
with "1". In order to calculate the absolute value of the
number, calculate the complement of the remaining
digits and add "1".

Example:

0101001

represents +41 decimal

1010111

represents

41 decimal

Micronas registers (read only for customers)

Table 5�3: Available register addresses

Register

Code

Data
Bits

Format

Customer

Remark

LOW-LEVEL

binary

read/write/program

off switching level

HIGH-LEVEL

binary

read/write/program

on switching level

VOQ

two compl.
binary

read/write/program

SENSITIVITY

signed binary

read/write/program

MODE

binary

read/write/program

Range and filter settings

LOCKR

binary

lock

Lock Bit

ADC-READOUT

two compl.
binary

read

signed binary

read/write/program

TCSQ

binary

read/write/program

DEACTIVATE

binary

write

Deactivate the sensor

Register

Code

Data
Bits

Format

Remark

OFFSET

two compl. binary

ADC offset adjustment

FOSCAD

binary

Oscillator frequency adjustment

SPECIAL

special settings

IMLOCK

binary

Lock Bit for the Micronas registers

HAL 1000

ADVANCE INFORMATION

Micronas

5.5. Register Information

LOW-LEVEL

� The register range is from 0 up to 1023.

� The register value is calculated by:

HIGH-LEVEL

� The register range is from 0 up to 2047.

� The register value is calculated by:

VOQ

� The register range is from

1024 up to 1023.

� The register value is calculated by:

SENSITIVITY

� The register range is from

8192 up to 8191.

� The register value is calculated by:

TC and TCSQ

� The TC register range is from

31 up to 31.

� The TCSQ register range is from 0 up to 31.

Please refer Section 4.2. on page 16 for the recom-
mended values.

MODE

� The register range is from 0 up to 63 and contains

the settings for FILTER and RANGE:

Please refer Section 2.2. on page 6 for the available
FILTER and RANGE values.

ADC-READOUT

� This register is read only.

� The register range is from

8192 up to 8191.

DEACTIVATE

� This register can only be written.

� The register has to be written with 2063 decimal

(80F hexadecimal) for the deactivation.

� The sensor can be reset with an Activate pulse on

the output pin or by switching off and on the supply
voltage.

5.6. Programming Information

If the content of any register (except the lock registers)
has to be changed, the desired value must first be writ-
ten into the corresponding RAM register. Before read-
ing out the RAM register again, the register value must
be permanently stored in the EEPROM.

Permanently storing a value in the EEPROM is done
by first sending an ERASE command followed by
sending a PROM command. The address within the
ERASE and PROM commands is not important.
ERASE and PROM act on all registers in parallel.

If all HAL 1000 registers have to be changed, all writing
commands can be sent one after the other, followed by
sending one ERASE and PROM command at the end.

Low-Level Voltage

* 2048

LOW-LEVEL =

High-Level Voltage

* 2048

HIGH-LEVEL =

* 1024

VOQ =

Sensitivity

2048

SENSITIVITY =

MODE = FILTER * 8 + RANGE

All information and data contained in this data sheet are without any
commitment, are not to be considered as an offer for conclusion of a
contract, nor shall they be construed as to create any liability. Any new
issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirmation
form; the same applies to orders based on development samples deliv-
ered. By this publication, Micronas GmbH does not assume responsibil-
ity for patent infringements or other rights of third parties which may
result from its use.
Further, Micronas GmbH reserves the right to revise this publication and
to make changes to its content, at any time, without obligation to notify
any person or entity of such revisions or changes.
No part of this publication may be reproduced, photocopied, stored on a
retrieval system, or transmitted without the express written consent of
Micronas GmbH.

HAL 1000

ADVANCE INFORMATION

Micronas

Micronas GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: docservice@micronas.com
Internet: www.micronas.com

Printed in Germany
Order No. 6251-528-1AI

6. Data Sheet History

1. Advance Information: "HAL 1000 Programmable
Hall Switch, May 31, 2000, 6251-528-1AI. First release
of the advance information.

Электронный компонент: HAL1000UT-A