HAL700
Dual Hall-Effect Sensor
with Independent Outputs
Edition Feb. 20, 2001
6251-477-1AI
ADVANCE INFORMATION
MICRONAS
MICRONAS
HAL700
ADVANCE INFORMATION
2
Micronas
Contents
Page
Section
Title
3
1.
Introduction
3
1.1.
Features
3
1.2.
Applications
4
1.3.
Marking Code
4
1.3.1.
Special Marking of Prototype Parts
4
1.4.
Operating Junction Temperature Range
4
1.5.
Hall Sensor Package Codes
4
1.6.
Solderability
5
2.
Functional Description
6
3.
Specifications
6
3.1.
Outline Dimensions
6
3.2.
Dimensions of Sensitive Areas
6
3.3.
Positions of Sensitive Areas
7
3.4.
Absolute Maximum Ratings
7
3.5.
Recommended Operating Conditions
8
3.6.
Electrical Characteristics
9
3.7.
Magnetic Characteristics
9
3.7.1.
Magnetic Threshold
9
3.7.2.
Matching of B
S1
and B
S2
9
3.7.3.
Hysteresis Matching
10
4.
Application Notes
10
4.1.
Ambient Temperature
10
4.2.
Extended Operating Conditions
10
4.2.1.
Supply voltage below 3.8 V
10
4.3.
Start-up Behavior
10
4.4.
EMC and ESD
12
5.
Data Sheet History
ADVANCE INFORMATION
HAL700
Micronas
3
Dual Hall-Effect Sensor with Independent Outputs
1. Introduction
The HAL 700 is a monolithic CMOS Hall-effect sensor
consisting of two independent latched switches (see
Fig. 33) with closely matched magnetic characteris-
tics controlling two independent open-drain outputs.
The Hall plates of the two switches are spaced
2.35 mm apart.
In combination with an active target providing a
sequence of alternating magnetic north and south
poles, the sensor forms a system generating the sig-
nals required to control position, speed, and direction
of the target movement.
The device includes temperature compensation and
active offset compensation to provide excellent stability
and matching of the switching points in the presence of
mechanical stress over the whole temperature- and
supply voltage range. This is required by systems
which determine the direction by comparing two trans-
ducer signals.
The sensor is designed for industrial and automotive
applications and operates with supply voltages from
3.8 V to 24 V in the ambient temperature range from
-
40
C up to 125
C.
The HAL 700 is available in the SMD package
SOT-89B.
1.1. Features
two independent Hall-switches
distance of Hall plates: 2.35 mm
low sensitivity
typical B
ON
: 14.9 mT at room temperature
typical B
OFF
:
-
14.9 mT at room temperature
temperature coefficient of
-
2000 ppm/K in all mag-
netic characteristics
switching offset compensation at typically 150 kHz
operation from 3.8 V to 24 V supply voltage
operation with static and dynamic magnetic fields up
to 10 kHz
overvoltage protection at all pins
reverse-voltage protection at V
DD
-pin
robustness of magnetic characteristics against
mechanical stress
short-circuit protected open-drain outputs by ther-
mal shutdown
constant switching points over a wide supply voltage
range
EMC corresponding to DIN 40839
1.2. Applications
The HAL 700 is the ideal sensor for position-control
applications with direction detection and alternating
magnetic signals such as:
multipole magnet applications,
rotating speed and direction measurement,
position tracking (active targets), and
window lifters.
HAL700
ADVANCE INFORMATION
4
Micronas
1.3. Marking Code
All Hall sensors have a marking on the package sur-
face (branded side). This marking includes the name
of the sensor and the temperature range.
1.3.1. Special Marking of Prototype Parts
Prototype parts are coded with an underscore beneath
the temperature range letter on each IC. They may be
used for lab experiments and design-ins but are not
intended to be used for qualification test or as produc-
tion parts.
1.4. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature T
J
).
K: T
J
=
-
40
C to +140
C
E: T
J
=
-
40
C to +100
C
The relationship between ambient temperature (T
A
)
and junction temperature is explained in Section 4.1.
on page 10.
1.5. Hall Sensor Package Codes
Hall sensors are available in a wide variety of packag-
ing quantities. For more detailed information, please
refer to the brochure: "Ordering Codes for Hall Sen-
sors".
1.6. Solderability
All packages: according to IEC68-2-58
During soldering, reflow processing, and manual
reworking, a component body temperature of 260
C
should not be exceeded.
Components stored in the original packaging should
provide a shelf life of at least 12 months, starting from
the date code printed on the labels, even in environ-
ments as extreme as 40
C and 90% relative humidity.
Fig. 11: Pin configuration
Type
Temperature Range
K
E
HAL 700
700K
700E
HALXXXPA-T
Temperature Range: K, or E
Package: SF for SOT-89B
Type: 700
Example: HAL 700SF-K
Type: 700
Package: SOT-89B
Temperature Range: T
J
=
-
40
C to +140
C
1 V
DD
4
GND
3 S1-Output
2 S2-Output
ADVANCE INFORMATION
HAL700
Micronas
5
2. Functional Description
The HAL 700 is a monolithic integrated circuit with two
independent subblocks consisting each of a Hall plate
and the corresponding comparator. Each subblock
independently switches the comparator output in
response to the magnetic field at the location of the
corresponding sensitive area. If a magnetic field with
flux lines perpendicular to the sensitive area is
present, the biased Hall plate generates a Hall voltage
proportional to this field. The Hall voltage is compared
with the actual threshold level in the comparator. The
subblocks are designed to have closely matched
switching points. The output of comparator 1 attached
to S1 controls the open drain output at Pin 3. Pin 2 is
set according to the state of comparator 2 connected
to S2.
The temperature-dependent bias common to both
subblocks increases the supply voltage of the Hall
plates and adjusts the switching points to the decreas-
ing induction of magnets at higher temperatures. If the
magnetic field exceeds the threshold levels, the com-
parator switches to the appropriate state. The built-in
hysteresis prevents oscillations of the outputs.
In order to achieve good matching of the switching
points of both subblocks, the magnetic offset caused
by mechanical stress is compensated for by use of
"switching offset compensation techniques". Therefore,
an internal oscillator provides a two-phase clock to
both subblocks. For each subblock, the Hall voltage is
sampled at the end of the first phase. At the end of the
second phase, both sampled and actual Hall voltages
are averaged and compared with the actual switching
point.
Shunt protection devices clamp voltage peaks at the
Output-pins and V
DD
-pin together with external series
resistors. Reverse current is limited at the V
DD
-pin by
an internal series resistor up to
-
15 V. No external
reverse protection diode is needed at the V
DD
-pin for
reverse voltages ranging from 0 V to
-
15 V.
Fig. 21: Timing diagram
Fig. 22: HAL 700 block diagram
t
Clock
t
B
S1
t
B
S2
t
Pin 2
t
Pin 3
t
I
DD
B
S1on
B
S2on
V
OH
V
OL
V
OH
V
OL
1/f
osc
t
f
t
f
Reverse
Voltage and
Overvoltage
Protection
Temperature
Dependent
Bias
Hysteresis
Control
Hall Plate 1
Switch
Comparator
GND
4
1
V
DD
Hall Plate 2
Switch
Comparator
Clock
Output
3
S1-Output
Output
2
S2-Output
Short Circuit
and
Overvoltage
Protection
S1
S2
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