HAL710, HAL730
Hall-Effect Sensors
with Direction Detection
Edition May 13, 2002
6251-478-1DS
DATA SHEET
MICRONAS
MICRONAS
HAL710, HAL730
DATA SHEET
2
May 13, 2002; 6251-478-1DS
Micronas
Contents
Page
Section
Title
3
1.
Introduction
3
1.1.
Features
3
1.2.
Family Overview
4
1.3.
Marking Code
4
1.3.1.
Special Marking of Prototype Parts
4
1.4.
Operating Junction Temperature Range
4
1.5.
Hall Sensor Package Codes
4
1.6.
Solderability
5
2.
Functional Description
8
3.
Specifications
8
3.1.
Outline Dimensions
8
3.2.
Dimensions of Sensitive Areas
8
3.3.
Positions of Sensitive Areas
9
3.4.
Absolute Maximum Ratings
9
3.4.1.
Storage, Moisture Sensitivity Class, and Shelf Life
9
3.5.
Recommended Operating Conditions
10
3.6.
Electrical Characteristics
14
4.
Type Description
14
4.1.
HAL710, HAL730
16
5.
Application
16
5.1.
Ambient Temperature
16
5.2.
Extended Operating Conditions
16
5.3.
Signal Delay
16
5.4.
Test Mode Activation
16
5.5.
Start-up Behavior
18
6.
Data Sheet History
DATA SHEET
HAL710, HAL730
Micronas
May 13, 2002; 6251-478-1DS
3
Hall-Effect Sensors with Direction Detection
1. Introduction
The HAL 710 and the HAL 730 are monolithic inte-
grated Hall-effect sensors manufactured in CMOS
technology with two independent Hall plates S1 and
S2 spaced 2.35 mm apart. The devices have two
open-drain outputs:
The Count Output operates like a single latched Hall
switch according to the magnetic field present at
Hall plate S1 (see Fig. 41).
The Direction Output indicates the direction of a lin-
ear or rotating movement of magnetic objects.
In combination with an active target providing a
sequence of alternating magnetic north and south
poles, the sensors generate the signals required to
control position, speed, and direction of the target
movement.
The internal circuitry evaluates the direction of the
movement and updates the Direction Output at every
edge of the Count Signal (rising and falling). The state
of the Direction Output only changes at a rising or fall-
ing edge of the Count Output.
The design ensures a setup time for the Direction Out-
put with respect to the corresponding Count Signal
edge of 1/2 clock periods (1
s minimum).
The devices include temperature compensation and
active offset compensation. These features provide
excellent stability and matching of the switching points
in the presence of mechanical stress over the whole
temperature and supply voltage range. This is required
by systems determining the direction from the compar-
ison of two signals.
The sensors are designed for industrial and automo-
tive applications and operate with supply voltages
from 3.8 V to 24 V in the ambient temperature range
from
-
40
C up to 125
C.
The HAL710 and the HAL730 are available in the
SMD package SOT-89B.
1.1. Features
generation of Count Signals and Direction Signals
delay of the Count Signals with respect to the
Direction Signal of 1
s minimum
switching type: latching
switching offset compensation at typically 150 kHz
operation from 3.8 V to 24 V supply voltage
overvoltage protection at all pins
reverse-voltage protection at V
DD
-pin
robustness of magnetic characteristics against
mechanical stress
short-circuit protected open-drain outputs
by thermal shut down
constant switching points over a wide
supply voltage range
EMC corresponding to DIN 40839
1.2. Family Overview
The types differ according to the behavior of the Direc-
tion Output.
Type
Direction Output:
Definition of Output State
HAL710
Output high, when
edge of comparator 1 precedes
edge of comparator 2
HAL730
Output high, when
edge of comparator 2 precedes
edge of comparator 1
HAL710, HAL730
DATA SHEET
4
May 13, 2002; 6251-478-1DS
Micronas
1.3. Marking Code
All Hall sensors have a marking on the package sur-
face (branded side). This marking includes the name
of the sensor and the temperature range.
1.3.1. Special Marking of Prototype Parts
Prototype parts are coded with an underscore beneath
the temperature range letter on each IC. They may be
used for lab experiments and design-ins but are not
intended to be used for qualification tests or as produc-
tion parts.
1.4. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature T
J
).
K: T
J
=
-
40
C to +140
C
E: T
J
=
-
40
C to +100
C
The relationship between ambient temperature (T
A
)
and junction temperature is explained in Section 5.1.
on page 16.
1.5. Hall Sensor Package Codes
Hall sensors are available in a wide variety of packag-
ing quantities. For more detailed information, please
refer to the brochure: "Hall Sensors: Ordering Codes,
Packaging, Handling".
1.6. Solderability
All packages: according to IEC68-2-58
During soldering, reflow processing and manual
reworking, a component body temperature of 260
C
should not be exceeded.
Components stored in the original packaging should
provide a shelf life of at least 12 months, starting from
the date code printed on the labels, even in environ-
ments as extreme as 40
C and 90% relative humidity.
Fig. 11: Pin configuration
Type
Temperature Range
K
E
HAL710
710K
710E
HAL730
730K
730E
HALXXXPA-T
Temperature Range: K or E
Package: SF for SOT-89B
Type: 710
Example: HAL710SF-K
Type: 710
Package: SOT-89B
Temperature Range: T
J
=
-
40
C to +140
C
1 V
DD
4
GND
3 Count Output
2 Direction Output
DATA SHEET
HAL710, HAL730
Micronas
May 13, 2002; 6251-478-1DS
5
2. Functional Description
The HAL 710 and the HAL 730 are monolithic inte-
grated circuits with two independent subblocks each
consisting of a Hall plate and the corresponding com-
parator. Each subblock independently switches the
comparator output in response to the magnetic field at
the location of the corresponding sensitive area. If a
magnetic field with flux lines perpendicular to the sen-
sitive area is present, the biased Hall plate generates a
Hall voltage proportional to this field. The Hall voltage
is compared with the actual threshold level in the com-
parator.
The output of comparator 1 (connected to S1) directly
controls the Count Output. The outputs of both com-
parators enter the Direction Detection Block controlling
the state of the Direction Output. The Direction Output
is updated at every edge of comparator 1 (rising and
falling). The previous state of the Direction Output is
maintained between two edges of the Count Output
and in case the edges at comparator 1 and compara-
tor 2 occur in the same clock period. The subblocks
are designed to have closely matched switching
points.
The temperature-dependent bias common to both
subblocks increases the supply voltage of the Hall
plates and adjusts the switching points to the decreas-
ing induction of magnets at higher temperatures. If the
magnetic field exceeds the threshold levels, the com-
parator switches to the appropriate state. The built-in
hysteresis prevents oscillations of the outputs.
In order to achieve good matching of the switching
points of both subblocks, the magnetic offset caused
by mechanical stress is compensated for by use of
switching offset compensation techniques. Therefore,
an internal oscillator provides a two-phase clock to
both subblocks. For each subblock, the Hall voltage is
sampled at the end of the first phase. At the end of the
second phase, both sampled and actual Hall voltages
are averaged and compared with the actual switching
point.
Shunt protection devices clamp voltage peaks at the
output pins and V
DD
-pin together with external series
resistors. Reverse current is limited at the V
DD
-pin by
an internal series resistor up to
-
15 V. No external
reverse protection diode is needed at the V
DD
-pin for
reverse voltages ranging from 0 V to
-
15 V.
Fig. 21: HAL710 timing diagram with respect to the
clock phase
Fig. 22 and Fig. 23 on page 6 show how the output
signals are generated by the HAL710 and the
HAL730. The magnetic flux density at the locations of
the two Hall plates is shown by the two sinusodial
curves at the top of each diagram. The magnetic
switching points are depicted as dashed lines for each
Hall plate separately.
At the time t = 0, the signal S2 precedes the signal S1.
The Direction Output is in the correct state according
to the definition of the sensor type.
When the phase of the magnetic signal changes its
sign, the Direction-Output switches its state with the
next signal edge of the Count Output.
I
dd
t
Direction
t
V
OH
V
OL
Count
t
V
OH
V
OL
B
S2
t
B
S2on
Clock
t
1/f
osc
t
f
Output
Output
B
S1
B
S1on
I
dd
HAL710, HAL730
DATA SHEET
6
May 13, 2002; 6251-478-1DS
Micronas
Fig. 22: HAL710 timing diagram
Fig. 23: HAL730 timing diagram
time
Bon,S1
Boff,S1
Boff,S2
Bon,S2
S1 Count
Output Pin 3
S2
Direction
Output Pin 2
HAL710
0
time
Bon,S1
Boff,S1
Boff,S2
Bon,S2
S1 Count
Output Pin 3
S2
Direction
Output Pin 2
HAL730
0
DATA SHEET
HAL710, HAL730
Micronas
May 13, 2002; 6251-478-1DS
7
Fig. 24: HAL710 and HAL730 block diagram
Reverse
Voltage and
Overvoltage
Protection
Temperature
Dependent
Bias
Hysteresis
Control
Hall Plate 1
Switch
Comparator
1
V
DD
Hall Plate 2
Switch
Comparator
Clock
Output
3
Count Output
Direction
Output
2
Direction Output
Short Circuit
and
Overvoltage
Protection
Test-Mode
Control
S1
S2
Detection
GND
4
HAL710, HAL730
DATA SHEET
8
May 13, 2002; 6251-478-1DS
Micronas
3. Specifications
3.1. Outline Dimensions
Fig. 31:
Plastic Small Outline Transistor Package
(SOT-89B)
Weight approximately 0.035 g
Dimensions in mm
Note: For all package diagrams, a mechanical toler-
ance of
0.05 mm applies to all dimensions
where no tolerance is explicitly given.
3.2. Dimensions of Sensitive Areas
Dimensions: 0.25 mm
0.12 mm
3.3. Positions of Sensitive Areas
sensitive area S
1
min.
0.25
x
1
x
2
2.55
0.4
0.4
0.4
1.5
3.0
0.06
0.04
4
0.2
0.15
branded side
SPGS0022-5-B4/1E
top view
y
1
2
3
4
0.3
1.15
0.2
sensitive area S
2
0.2
4.55
1.7
SOT-89B
x
1
+
x
2
(2.35
0.001) mm
x
1
=
x
2
1.175 mm nominal
y
0.975 mm nominal
DATA SHEET
HAL710, HAL730
Micronas
May 13, 2002; 6251-478-1DS
9
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in
the "Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute
maximum ratings conditions for extended periods may affect device reliability.
3.4.1. Storage, Moisture Sensitivity Class, and Shelf Life
For more detailed information, please refer to the brochure: "Hall Sensors: Ordering Codes, Packaging, Handling".
3.5. Recommended Operating Conditions
Symbol
Parameter
Pin No.
Min.
Max.
Unit
V
DD
Supply Voltage
1
-
15
28
1)
V
V
O
Output Voltage
2, 3
-
0.3
28
1)
V
I
O
Continuous Output Current
2, 3
-
20
1)
mA
T
J
Junction Temperature Range
-
40
170
C
1)
as long as T
Jmax
is not exceeded
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
V
DD
Supply Voltage
1
3.8
-
24
V
I
O
Continuous Output
Current
3
0
-
10
mA
V
O
Output Voltage
(output switch off)
3
0
-
24
V
HAL710, HAL730
DATA SHEET
10
May 13, 2002; 6251-478-1DS
Micronas
3.6. Electrical Characteristics
at T
J
=
-
40 C to +140 C, V
DD
= 3.8 V to 24 V, as not otherwise specified in Test Conditions.
Typical characteristics for T
J
= 25 C and V
DD
= 5 V.
Fig. 32: Recommended pad size for SOT-89B
Dimensions in mm
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
I
DD
Supply Current
1
3
5.5
9
mA
T
J
= 25 C
I
DD
Supply Current
over Temperature Range
1
2
7
10
mA
V
DDZ
Overvoltage Protection
at Supply
1
-
28.5
32
V
I
DD
= 25 mA, T
J
= 25 C, t = 2 ms
V
OZ
Overvoltage Protection
at Output
2,3
-
28
32
V
I
OL
= 20 mA, T
J
= 25 C, t = 15 ms
V
OL
Output Voltage
2,3
-
130
280
mV
I
OL
= 10 mA, T
J
= 25 C
V
OL
Output Voltage over
Temperature Range
2,3
-
130
400
mV
I
OL
= 10 mA,
I
OH
Output Leakage Current
2,3
-
0.06
0.1
A
Output switched off, T
J
= 25 C,
V
OH
= 3.8 V to 24 V
I
OH
Output Leakage Current over
Temperature Range
2,3
-
-
10
A
Output switched off, T
J
140 C,
V
OH
= 3.8 V to 24 V
f
osc
Internal Sampling Frequency over
Temperature Range
-
100
150
-
kHz
t
en
(O)
Enable Time of Output after
Setting of V
DD
1
-
50
-
s
V
DD
= 12 V,
B>B
on
+ 2 mT or B<B
off
-
2 mT
t
r
Output Rise Time
2,3
-
0.2
-
s
V
DD
= 12 V, R
L
= 2.4 k
,
C
L
= 20 pF
t
f
Output FallTime
2,3
-
0.2
-
s
V
DD
= 12 V, R
L
= 2.4 k
,
C
L
= 20 pF
R
thSB
SOT-89B
Thermal Resistance Junction to
Substrate Backside
-
-
150
200
K/W
Fiberglass Substrate
30 mm x 10mm x 1.5mm,
pad size see Fig. 32
5.0
2.0
2.0
1.0
DATA SHEET
HAL710, HAL730
Micronas
May 13, 2002; 6251-478-1DS
11
15
10
5
0
5
10
15
20
25
1510 5 0
5
10 15 20 25 30 35 V
mA
V
DD
I
DD
T
A
= 40
C
T
A
= 25
C
T
A
=140
C
HAL 7xx
Fig. 33: Typical supply current
versus supply voltage
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
1
2
3
4
5
6
7
8 V
mA
V
DD
I
DD
T
A
= 40
C
T
A
= 25
C
T
A
= 140
C
T
A
= 100
C
HAL 7xx
Fig. 34: Typical supply current
versus supply voltage
2
3
4
5
6
50
0
50
100
150
C
mA
T
A
I
DD
V
DD
= 3.8 V
V
DD
= 12 V
V
DD
= 24 V
HAL 7xx
Fig. 35: Typical supply current
versus ambient temperature
140
150
160
170
180
190
50
0
50
100
150
200
C
kHz
T
A
f
osc
V
DD
= 3.8 V
V
DD
= 4.5 V...24 V
HAL 7xx
Fig. 36: Typ. internal chopper frequency
versus ambient temperature
HAL710, HAL730
DATA SHEET
12
May 13, 2002; 6251-478-1DS
Micronas
120
140
160
180
200
220
240
0
5
10
15
20
25
30 V
kHz
V
DD
f
osc
T
A
= 40
C
T
A
= 25
C
T
A
= 140
C
HAL 7xx
Fig. 37: Typ. internal chopper frequency
versus supply voltage
120
140
160
180
200
220
240
3
3.5
4.0
4.5
5.0
5.5
6.0 V
kHz
V
DD
f
osc
T
A
= 40
C
T
A
= 25
C
T
A
= 140
C
HAL 7xx
Fig. 38: Typ. internal chopper frequency
versus supply voltage
0
50
100
150
200
250
300
350
400
0
5
10
15
20
25
30 V
mV
V
DD
V
OL
T
A
= 40
C
T
A
= 25
C
T
A
= 140
C
I
O
= 10 mA
T
A
= 100
C
HAL 7xx
Fig. 39: Typical output low voltage
versus supply voltage
0
100
200
300
400
3
3.5
4.0
4.5
5.0
5.5
6.0 V
mV
V
DD
V
OL
T
A
= 40
C
T
A
= 25
C
T
A
= 140
C
I
O
= 10 mA
T
A
=100
C
HAL 7xx
Fig. 310: Typ. output low voltage
versus supply voltage
DATA SHEET
HAL710, HAL730
Micronas
May 13, 2002; 6251-478-1DS
13
0
50
100
150
200
250
300
50
0
50
100
150
C
mV
T
A
V
OL
V
DD
= 24 V
V
DD
= 3.8 V
V
DD
= 4.5 V
HAL 7xx
I
O
= 10 mA
Fig. 311: Typical output low voltage
versus ambient temperature
15
20
25
30
35 V
A
V
OH
I
OH
T
A
= 140
C
T
A
= 100
C
T
A
= 25
C
10
6
10
5
10
4
10
3
10
2
10
1
10
0
10
1
10
2
HAL 7xx
Fig. 312: Typical output leakage current
versus output voltage
50
0
50
100
150
200
C
A
T
A
I
OH
V
OH
= 24 V
10
5
10
4
10
3
10
2
10
1
10
0
10
1
10
2
HAL 7xx
V
OH
= 3.8 V
Fig. 313: Typical output leakage current
versus ambient temperature
HAL710, HAL730
DATA SHEET
14
May 13, 2002; 6251-478-1DS
Micronas
4. Type Description
4.1. HAL710, HAL730
The types differ according to the behavior of the Direc-
tion Output (see Section 1.2. on page 3).
Magnetic Features
Fig. 41: Definition of magnetic switching points for
the HAL710
Positive flux density values refer to magnetic south
pole at the branded side of the package.
typical B
ON
: 14.9 mT at room temperature
typical B
OFF
:
-
14.9 mT at room temperature
temperature coefficient of
-
2000 ppm/K in all mag-
netic characteristics
operation with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Applications
The HAL710 and the HAL730 are the optimal sensors
for position-control applications with direction detection
and alternating magnetic signals such as:
multipole magnet applications,
rotating speed and direction measurement,
position tracking (active targets), and
window lifters.
Magnetic Thresholds
(quasistationary: dB/dt<0.5 mT/ms)
at T
J
=
-
40 C to +140 C, V
DD
= 3.8 V to 24 V, as not
otherwise specified
Typical characteristics for T
J
= 25 C and V
DD
= 5 V
Matching BS1 and BS2
(quasistationary: dB/dt<0.5 mT/ms)
at T
J
=
-
40 C to +140 C, V
DD
= 3.8 V to 24 V, as not
otherwise specified
Typical characteristics for T
J
= 25 C and V
DD
= 5 V
Hysteresis Matching
(quasistationary: dB/dt<0.5 mT/ms)
at T
J
=
-
40 C to +140 C, V
DD
= 3.8 V to 24 V, as not
otherwise specified
Typical characteristics for T
J
= 25 C and V
DD
= 5 V
B
OFF
B
ON
0
V
OL
V
O
Output Voltage
B
B
HYS
Para-
meter
On-Point
B
S1on,
B
S2on
Off-Point
B
S1off,
, B
S2off
Unit
T
j
Min.
Typ.
Max.
Min.
Typ.
Max.
-
40 C
12.5
16.3
20
-
20
-
16.3
-
12.5
mT
25 C
10.7
14.9
19.1
-
19.1
-
14.9
-
10.7
mT
100 C
7.7
12.5
17.3
-
17.3
-
12.5
-
7.7
mT
140 C
6.0
10.9
16.0
-
16.0
-
10.9
-
6.0
mT
Para-
meter
B
S1on
-
B
S2on
B
S1off
-
B
S2off
Unit
T
j
Min.
Typ
Max.
Min.
Typ
Max.
-
40 C
-
7.5
0
7.5
-
7.5
0
7.5
mT
25 C
-
7.5
0
7.5
-
7.5
0
7.5
mT
100 C
-
7.5
0
7.5
-
7.5
0
7.5
mT
140 C
-
7.5
0
7.5
-
7.5
0
7.5
mT
Parameter
(B
S1on
-
B
S1off
) / (B
S2on
-
B
S2off
)
Unit
T
j
Min.
Typ.
Max.
-
40 C
0.85
1.0
1.2
-
25 C
0.85
1.0
1.2
-
100 C
0.85
1.0
1.2
-
140 C
0.85
1.0
1.2
-
DATA SHEET
HAL710, HAL730
Micronas
May 13, 2002; 6251-478-1DS
15
-
20
-
15
-
10
-
5
0
5
10
15
20
0
5
10
15
20
25
30 V
mT
V
DD
B
ON
B
OFF
T
A
=
-
40
C
T
A
= 25
C
T
A
= 140
C
T
A
= 100
C
HAL 710, HAL 730
B
ON
B
OFF
Fig. 42: Magnetic switching points
versus supply voltage
-
20
-
15
-
10
-
5
0
5
10
15
20
3
3.5
4.0
4.5
5.0
5.5
6.0 V
mT
V
DD
B
ON
B
OFF
HAL 710, HAL 730
B
ON
B
OFF
T
A
=
-
40
C
T
A
= 25
C
T
A
= 140
C
T
A
= 100
C
Fig. 43: Magnetic switching points
versus supply voltage
-
25
-
20
-
15
-
10
-
5
0
5
10
15
20
25
-
50
0
50
100
150
C
mT
T
A
, T
J
B
ON
B
OFF
B
ON
max
B
ON
typ
B
ON
min
B
OFF
max
B
OFF
typ
B
OFF
min
HAL 710, HAL730
V
DD
= 3.8 V
V
DD
= 4.5 V... 24 V
Fig. 44: Magnetic switching points
versus ambient temperature
HAL710, HAL730
DATA SHEET
16
May 13, 2002; 6251-478-1DS
Micronas
5. Application
5.1. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature T
J
) is higher
than the temperature outside the package (ambient
temperature T
A
).
T
J
= T
A
+
T
At static conditions, the following equation is valid:
T = I
DD
* V
DD
* R
th
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
I
DD
and R
th
, and the max. value for V
DD
from the appli-
cation.
For all sensors, the junction temperature range T
J
is
specified. The maximum ambient temperature T
Amax
can be calculated as:
T
Amax
= T
Jmax
-
T
5.2. Extended Operating Conditions
All sensors fulfil the electrical and magnetic character-
istics when operated within the "Recommended Oper-
ating Conditions" (see Section 3.5. on page 9).
Supply Voltage Below 3.8 V
Typically, the sensors operate with supply voltages
above 3 V, however, below 3.8 V some characteristics
may be outside the specification.
Note: The functionality of the sensor below 3.8 V is
not tested. For special test conditions, please
contact Micronas.
5.3. Signal Delay
The extra circuitry required for the direction detection
increases the latency of the Count and Direction Sig-
nal compared to a simple switch (e.g. HAL 525). This
extra delay corresponds to 0.5 and 1 clock period for
the Direction Signal and Count Signal respectively.
5.4. Test Mode Activation
In order to obtain the normal operation as described
above, two external pull-up resistors with appropriate
values are required to connect each output to an exter-
nal supply, such that the potential at the open-drain
output rises to at least 3 V in less than 10
s after hav-
ing turned off the corresponding pull-down transistor or
after having applied V
DD
.
If the Direction Output is pulled low externally (the
potential does not rise after the internal pull-down tran-
sistor has been turned off), the device enters Manufac-
turer Test Mode.
Direction detection is not functional in Manufacturer
Test Mode. The device returns to normal operation as
soon as the Count Output goes high.
Note: The presence of a Manufacturer Test Mode
requires appropriate measures to prevent acci-
dental activation (e.g. in response to EMC
events).
5.5. Start-up Behavior
Due to the active offset compensation, the sensors
have an initialization time (enable time t
en(O)
) after
applying the supply voltage. The parameter t
en(O)
is
specified in the "Electrical Characteristics" (see
Section 3.6. on page 10).
During the initialization time, the output states are not
defined and the outputs can toggle. After t
en(O)
, both
outputs will be either high or low for a stable magnetic
field (no toggling) and the Count Output will be low if
the applied magnetic field B exceeds B
ON
. The Count
Output will be high if B drops below B
OFF
. The Direc-
tion Output will have the correct state after the second
edge (rising or falling) in the same direction.
The device contains a Power-On Reset circuit (POR)
generating a reset when V
DD
rises. This signal is used
to disable Test Mode. The generation of this reset sig-
nal is guaranteed when V
DD
at the chip rises to a mini-
mum 3.8 V in less than 4
s monotonically. If this con-
dition is violated, the internal reset signal might be
missing. Under these circumstances, the chip will still
operate according to the specification, but the risk of
toggling outputs during t
en(O)
increases; and for mag-
netic fields between B
OFF
and B
ON
, the output states
of the Hall sensor after applying V
DD
will be either low
or high. In order to achieve a well-defined output state,
the applied magnetic field then must exceed B
ONmax
,
respectively, drop below B
OFFmin
.
DATA SHEET
HAL710, HAL730
Micronas
May 13, 2002; 6251-478-1DS
17
All information and data contained in this data sheet are without any
commitment, are not to be considered as an offer for conclusion of a
contract, nor shall they be construed as to create any liability. Any new
issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirmation
form; the same applies to orders based on development samples deliv-
ered. By this publication, Micronas GmbH does not assume responsibil-
ity for patent infringements or other rights of third parties which may
result from its use.
Further, Micronas GmbH reserves the right to revise this publication
and to make changes to its content, at any time, without obligation to
notify any person or entity of such revisions or changes.
No part of this publication may be reproduced, photocopied, stored on a
retrieval system, or transmitted without the express written consent of
Micronas GmbH.
HAL710, HAL730
DATA SHEET
18
May 13, 2002; 6251-478-1DS
Micronas
Micronas GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: docservice@micronas.com
Internet: www.micronas.com
Printed in Germany
Order No. 6251-478-1DS
6. Data Sheet History
1. Data Sheet: "HAL710, HAL 730 Hall-Effect Sensors
with Direction Detection", May 13, 2002,
6251-478-1DS. First release of the data sheet.
PDF 
ZIP