HAL 800

Micronas

Contents

Page

Section

Title

Introduction

1.1.

Major Applications

1.2.

Features

1.3.

Marking Code

1.4.

Operating Junction Temperature Range (T

)

1.5.

Hall Sensor Package Codes

1.6.

Solderability

1.7.

Pin Connections and Short Descriptions

Functional Description

2.1.

General Function

2.2.

Digital Signal Processing and EEPROM

2.3.

Calibration Procedure

2.3.1.

General Procedure

2.3.2.

Calibration of Angle Sensor

Specifications

3.1.

Outline Dimensions

3.2.

Dimensions of Sensitive Area

3.3.

Position of Sensitive Area

3.4.

Absolute Maximum Ratings

3.5.

Recommended Operating Conditions

3.6.

Electrical Characteristics

3.7.

Magnetic Characteristics

3.8.

Typical Characteristics

Application Notes

4.1.

Application Circuit

4.2.

Temperature Compensation

4.3.

Ambient Temperature

4.4.

EMC and ESD

Programming of the Sensor

5.1.

Definition of Programming Pulses

5.2.

Definition of the Telegram

5.3.

Telegram Codes

5.4.

Number Formats

5.5.

5.6.

Programming Information

Data Sheet History

HAL 800

Micronas

Programmable Linear Hall Effect Sensor

1. Introduction

The

HAL 800 is an universal magnetic field sensor with

a linear output based on the Hall effect. The IC is
designed and produced in sub-micron CMOS technol-
ogy and can be used for angle or distance measure-
ments if combined with a rotating or moving magnet.
The major characteristics like magnetic field range,
sensitivity, output quiescent voltage (output voltage at
B = 0 mT), and output voltage range are programma-
ble in a non-volatile memory. The sensor has a ratio-
metric output characteristic, which means that the out-
put voltage is proportional to the magnetic flux and the
supply voltage.

The HAL 800 features a temperature compensated
Hall plate with choppered offset compensation, an A/D
converter, digital signal processing, a D/A converter
with output driver, an EEPROM memory with redun-
dancy and lock function for the calibration data, a serial
interface for programming the EEPROM, and protec-
tion devices at all pins. The internal digital signal pro-
cessing is of great benefit because analog offsets,
temperature shifts, and mechanical stress do not
degrade the sensor accuracy.

The HAL 800 is programmable by modulating the sup-
ply voltage. No additional programming pin is needed.
The easy programmability allows a 2-point calibration
by adjusting the output voltage directly to the input sig-
nal (like mechanical angle, distance or current). An
individual adjustment of each sensor during the cus-
tomers manufacturing process is possible. With this
calibration procedure the tolerances of the sensor, the
magnet, and the mechanical positioning can be com-
pensated in the final assembly.

In addition, the temperature compensation of the Hall
IC can be fit to all common magnetic materials by pro-
gramming first and second order temperature coeffi-
cients of the Hall sensor sensitivity. This enables an
operation over the full temperature range with high
accuracy.

The calculation of the individual sensor characteristics
and the programming of the EEPROM memory can
easily be done with a PC and the application kit from
Micronas. The HAL 800 eases logistic because its
characteristics can be programmed in a wide range.
Therefore, one Hall IC type can be used for various
applications.

The sensor is designed for hostile industrial and auto-
motive applications and operates with typically 5 V
supply voltage in the ambient temperature range from

40 �C up to 150 �C.

The

HAL 800 is available in the very small leaded

package TO-92UT.

1.1. Major Applications

Due to the sensor's versatile programming characteris-
tics, the HAL 800 is the optimal system solution for
applications such as:

� contactless potentiometers,

� rotary position measurement,

� linear position detection,

� magnetic field and current measurement.

1.2. Features

� high precision linear Hall effect sensor with

ratiometric output

� multiple programmable magnetic characteristics

with non-volatile memory

� digital signal processing

� temperature characteristics programmable for

matching all common magnetic materials

� programmable clamping voltages

� programming with a modulation of the supply

voltage

� lock function and redundancy for EEPROM memory

� operates from

40 �C up to 150 �C

ambient temperature

� operates from 4.5 V up to 5.5 V supply voltage

� operates with static magnetic fields and dynamic

magnetic fields up to 2 kHz

� choppered offset compensation

� overvoltage and reverse-voltage protection at all

pins

� magnetic characteristics extremely robust against

mechanical stress

� short-circuit protected push-pull output

� EMC optimized design

HAL 800

Micronas

1.3. Marking Code

The HAL 800 has a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.

1.4. Operating Junction Temperature Range (T

)

A: TJ =

40 �C to +170 �C

K: TJ =

40 �C to +140 �C

E: TJ =

40 �C to +100 �C

C: TJ = 0 �C to +100 �C

The Hall sensors from Micronas are specified to the
chip temperature (junction temperature T

The relationship between ambient temperature (T

)

and junction temperature is explained in Section 4.3.
on page 18.

1.5. Hall Sensor Package Codes

Example: HAL800UT-A

Type:

800

Package:

TO-92UT

Temperature Range:

40�C to +170�C

Hall sensors are available in a wide variety of packag-
ing versions and quantities. For more detailed informa-
tion, please refer to the brochure: "Ordering Codes for
Hall Sensors".

1.6. Solderability

Package TO-92UT: according to IEC68-2-58

During soldering reflow processing and manual
reworking, a component body temperature of 260 �C
should not be exceeded.

Components stored in the original packaging should
provide a shelf life of at least 12 months, starting from
the date code printed on the labels, even in environ-
ments as extreme as 40 �C and 90% relative humidity.

1.7. Pin Connections and Short Descriptions

Fig. 1�1: Pin configuration

Type

Temperature Range

HAL 800

800A

800K

800E

800C

HALXXXPA-T

Temperature Range: A, K, E, or C

Package: UT for TO-92UT

Type: 800

Pin
No.

Pin Name

Type

Short Description

Supply Voltage and
Programming Pin

GND

Ground

OUT

Push Pull Output

OUT

GND

HAL 800

Micronas

2. Functional Description

2.1. General Function

The HAL 800 is a monolithic integrated circuit which
provides an output voltage proportional to the mag-
netic flux through the Hall plate and proportional to the
supply voltage.

The external magnetic field component perpendicular
to the branded side of the package generates a Hall
voltage. This voltage is converted to a digital value,
processed in the Digital Signal Processing Unit (DSP)
according to the EEPROM programming, converted to
an analog voltage with ratiometric behavior, and stabi-
lized by a push-pull output transistor stage. The func-
tion and the parameters for the DSP are detailed
explained in Section 2.2. on page 7.

The setting of the LOCK register disables the program-
ming of the EEPROM memory for all time. This regis-
ter cannot be reset.

As long as the LOCK register is not set, the output
characteristic can be adjusted by modifying the
EEPROM registers. The IC is addressed by modulat-
ing the supply voltage (see Fig. 2�1). In the supply
voltage range from 4.5 V up to 5.5 V, the sensor gener-

ates an analog output voltage. After detecting a com-
mand, the sensor reads or writes the memory and
answers with a digital signal on the output pin. The
analog output is switched off during the communica-
tion.

Internal temperature compensation circuitry and the
choppered offset compensation enables operation
over the full temperature range with minimal changes
in accuracy and high offset stability. The circuitry also
rejects offset shifts due to mechanical stress from the
package. The non-volatile memory is equipped with
redundant EEPROM cells. In addition, the sensor IC is
equipped with devices for overvoltage and reverse volt-
age protection at all pins.

Fig. 2�1: Programming with V

modulation

Fig. 2�2: HAL800 block diagram

)

HAL

800A

GND

OUT

analog

digital

Internally

Temperature

Oscillator

Switched

A/D

Digital

D/A

Analog

OUT

GND

Supply

EEPROM Memory

Lock Control

Digital

stabilized
Supply and
Protection
Devices

Dependent
Bias

Protection
Devices

Hall Plate

Converter

Signal
Processing

Converter

Output

Level
Detection

Output

100

HAL 800

Micronas

Fig. 2�3: Details of EEPROM and Digital Signal Processing

MODE Register

FILTER

6 bit

TCSQ

5 bit

SENSI-

14 bit

VOQ

11 bit

CLAMP-

10 bit

11 bit

LOCK

1 bit

RANGE

2 bit

EEPROM Memory

A/D
Converter

Digital
Filter

Multiplier

Adder

Limiter

D/A
Converter

Digital Signal Processing

ADC-READOUT Register

14 bit

Digital

Lock

Control

TIVITY

LOW

CLAMP-
HIGH

Output

Micronas

Registers

�40

�20

40 mT

OUT

Clamp-high = 4 V

Sensitivity = 0.15

= 2.5 V

Clamp-low = 1 V

Range = 30 mT

Fig. 2�4: Example for output characteristics

�150 �100

�50

100

150 mT

OUT

Clamp-high = 4.5 V

Sensitivity = �0.45

= �0.5 V

Clamp-low = 0.5 V

Range = 150 mT

Fig. 2�5: Example for output characteristics

HAL 800

Micronas

2.2. Digital Signal Processing and EEPROM

The DSP is the major part of this sensor and performs
the signal conditioning. The parameters for the DSP
are stored in the EEPROM registers. The details are
shown in Fig. 2�3.

Terminology:

SENSITIVITY: name of the register or register value

Sensitivity:

name of the parameter

The EEPROM registers consist of three groups:

Group 1 contains the registers for the adaption of the
sensor to the magnetic system:
MODE for selecting the magnetic field range and filter
frequency, TC and TCSQ for temperature characteris-
tics of the magnetic sensitivity.

Group 2 contains the registers for defining the output
characteristics: SENSITIVITY, VOQ, CLAMP-LOW,
and CLAMP-HIGH. The output characteristic of the
sensor is defined by these 4 parameters (see Fig. 2�4
and

Fig. 2�5 for examples).

� The parameter V

(Output Quiescent Voltage) cor-

responds to the output voltage at B = 0 mT.

� The parameter Sensitivity is defined as:

� The output voltage can be calculated as:

The output voltage range can be clamped by setting
the registers CLAMP-LOW and CLAMP-HIGH in order
to enable failure detection (such as short-circuits to
V

or GND).

Group 3 contains the Micronas registers and LOCK for
the locking of all registers. The Micronas registers are
programmed and locked during production and are
read-only for the customer. These registers are used
for oscillator frequency trimming, A/D converter offset
compensation, and several other special settings.

The ADC converts positive or negative Hall voltages
(operates with magnetic north and south poles at the
branded side of the package) in a digital value. This
signal is filtered in the Digital Filter and is readable in
the ADC-READOUT register as long as the LOCK bit
is not set.

Note: The ADC-READOUT values and the resolution
of the system depends on the filter frequency. Positive
values accord to a magnetic north pole on the branded
side of the package. Fig. 2�6 and Fig. 2�7 show typi-
cal ADC-READOUT values for the different magnetic
field ranges and filter frequencies.

�6000

�4000

�2000

2000

4000

6000

�200�150�100 �50

50 100 150 200 mT

ADC-
READOUT

Filter = 500 Hz

Range 150 mT

Range 90 mT

Range 75 mT

Range 30 mT

Fig. 2�6: Typical ADC-READOUT
versus magnetic field for filter = 500 Hz

OUT

Sensitivity =

OUT

Sensitivity

�

B + V

�1500

�1000

�500

500

1000

1500

�200�150�100 �50

50 100 150 200 mT

ADC-
READOUT

Range 150 mT

Range 90 mT

Range 75 mT

Range 30 mT

Filter = 2 kHz

Fig. 2�7: Typical ADC-READOUT
versus magnetic field for filter = 2 kHz

HAL 800

Micronas

Range

The RANGE bits are the two lowest bits of the MODE
register; they define the magnetic field range of the
A/D converter.

Filter

The FILTER bit is the highest bit of the MODE register;
it defines the

3 dB frequency of the digital low pass fil-

ter

TC and TCSQ

The temperature dependence of the magnetic sensitiv-
ity can be adapted to different magnetic materials in
order to compensate for the change of the magnetic
strength with temperature. The adaption is done by
programming the TC (Temperature Coefficient) and
the TCSQ registers (Quadratic Temperature Coeffi-
cient). Thereby, the slope and the curvature of the
magnetic sensitivity can be matched to the magnet
and the sensor assembly. As a result, the output volt-
age characteristic can be fixed over the full tempera-
ture range. The sensor can compensate for linear tem-
perature coefficients in the range from about -2900
ppm/K up to 700 ppm/K and quadratic coefficients
from about -5 ppm/K� to 5 ppm/K�. Please refer to
Section 4.2. on page 17 for the recommended settings
for different linear temperature coefficients.

Sensitivity

The SENSITIVITY register contains the parameter for
the Multiplier in the DSP. The Sensitivity is programma-
ble between -4 and 4. For V

= 5 V the register can

be changed in steps of 0.00049. Sensitivity = 1 corre-
sponds to an increase of the output voltage by V

the ADC-READOUT increases by 2048.

For all calculations, the digital value from the magnetic
field of the A/D converter is used. This digital informa-
tion is readable from the ADC-READOUT register.

VOQ

The VOQ register contains the parameter for the
Adder in the DSP. V

is the output voltage without

external magnetic field (B = 0 mT) and programmable
from

up to V

. For V

= 5 V the register can

be changed in steps of 4.9 mV.

Note: If V

is programmed to a negative voltage, the

maximum output voltage is limited to:

For calibration in the system environment, a 2-point
adjustment procedure (see Section 2.3.) is recom-
mended. The suitable Sensitivity and V

values for

each sensor can be calculated individually by this pro-
cedure.

Clamping Voltage

The output voltage range can be clamped in order to
detect failures like shorts to V

or GND.

The CLAMP-LOW register contains the parameter for
the lower limit. The lower clamping voltage is program-
mable between 0 V and V

/2. For V

= 5 V the reg-

ister can be changed in steps of 2.44 mV.

The CLAMP-HIGH register contains the parameter for
the higher limit. The higher clamping voltage is pro-
grammable between 0 V and V

. For V

= 5 V in

steps of 2.44 mV.

LOCK

By setting this 1-bit register, all registers will be locked,
and the sensor will no longer respond to any supply
voltage modulation.

Warning: This register cannot be reset!

ADC-READOUT

This 14-bit register delivers the actual digital value of
the applied magnetic field before the signal process-
ing. This register can be read out and is the basis for
the calibration procedure of the sensor in the system
environment.

RANGE

Magnetic Field Range

30 mT...30 mT

75 mT...75 mT

90 mT...90 mT

150 mT...150 mT

FILTER

3 dB Frequency

2 kHz

500 Hz

OUT

* 2048

ADC-READOUT * V

Sensitivity =

OUTmax

= V

+ V

HAL 800

Micronas

2.3. Calibration Procedure

2.3.1. General Procedure

For calibration in the system environment, the applica-
tion kit from Micronas is recommended. It contains the
hardware for the generation of the serial telegram for
programming and the corresponding software for the
input of the register values.

In this section, programming of the sensor with this
programming tool is explained. Please refer to
Section 5. on page 19 for information about program-
ming without this tool.

For the individual calibration of each sensor in the cus-
tomer application, a two point adjustment is recom-
mended (see Fig. 2�8 for an example). When using
the application kit, the calibration can be done in three
steps:

Step 1: Input of the registers which need not be
adjusted individually

The magnetic circuit, the magnetic material with its
temperature characteristics, the filter frequency, and
low and high clamping voltage are given for this appli-
cation.

Therefore, the values of the following registers should
be identical for all sensors of the customer application.

� FILTER

(according to the maximum signal frequency)

� RANGE

(according to the maximum magnetic field at the
sensor position)

� TC and TCSQ

(depends on the material of the magnet and the
other temperature dependencies of the application)

� CLAMP-LOW and CLAMP-HIGH

(according to the application requirements)

Write the appropriate settings into the HAL 800 regis-
ters.

After writing, the information is stored in an internal
RAM and not in the EEPROM. It is valid until switching
off the supply voltage. If the values should be perma-
nently stored in the EEPROM, the "STORE" command
must be used before switching off the supply voltage.

Step 2: Calculation of V

and Sensitivity

The calibration points 1 and 2 can be set inside the
specified range. The corresponding values for V

OUT1

and V

OUT2

result from the application requirements.

For highest accuracy of the sensor, calibration points
near the minimum and maximum input signal are rec-
ommended. The difference of the output voltage
between calibration point 1 and calibration point 2
should be more than 3.5 V.

Set the system to calibration point 1 and read the reg-
ister ADC-READOUT. The result is the value ADC-
READOUT1.

Now, set the system to calibration point 2, read the
register ADC-READOUT again, and get the value
ADC-READOUT2.

With these values and the target values V

OUT1

and

OUT2

, for the calibration points 1 and 2, respectively,

the values for Sensitivity and V

are calculated as:

This calculation has to be done individually for each
sensor.

Now, write the calculated values for Sensitivity and
V

for adjusting the sensor.

Use the "STORE" command for permanently storing
the EEPROM registers. The sensor is now calibrated
for the customer application. However, the program-
ming can be changed again and again if necessary.

Step 3: Locking the Sensor

The last step is activating the LOCK function with the
"LOCK" command. The sensor is now locked and does
not respond to any programming or reading com-
mands.

Warning: This register cannot be reset!

Low clamping voltage

OUT1,2

High clamping voltage

OUT1

OUT2

ADC-READOUT1

ADC-READOUT2

Sensitivity =

2048

ADC-READOUT1 * Sensitivity * V

2048

= V

OUT1

HAL 800

Micronas

2.3.2. Calibration of Angle Sensor

The following description explains the calibration pro-
cedure using an angle sensor as an example. The
required output characteristic is shown in Fig. 2�8.

� the angle range is from

25� to 25�

� temperature coefficient of the magnet:

500 ppm/K

Step 1: Input of the registers which need not to be
adjusted individually

The register values for the following registers are given
for all applications:

� FILTER

Select the filter frequency: 500 Hz

� RANGE

Select the magnetic field range: 30 mT

� TC

For this magnetic material: 1

� TCSQ

For this magnetic material: 12

� CLAMP-LOW

For our example: 0.5 V

� CLAMP-HIGH

For our example: 4.5 V

Enter these values in the software, and use the
"WRITE" command for writing the values in the regis-
ters.

Step 2: Calculation of V

and Sensitivity

There are 2 ways to calculate the values for V

and

Sensitivity

Manual Calculation:

Set the system to calibration point 1 (angle 1 =

25�)

and read the register ADC-READOUT. For our exam-
ple, the result is ADC-READOUT1 =

2500.

Now, set the system to calibration point 2 (angle 2 =
25�), and read the register ADC-READOUT again. For
our example, the result is ADC-READOUT2 =

2350.

With these measurements and the targets V

OUT1

4.5 V and V

OUT2

= 0.5 V, the values for Sensitivity and

are

This calculation has to be done individually for each
sensor.

Automatic Calibration:

Use the menu CALIBRATE from the PC software and
enter the values 4.5 V for V

OUT1

and 0.5 V for V

OUT2

Set the system to calibration point 1 (angle 1 =

25�),

hit the button Read ADC-Readout1, set the system to
calibration point 2 (angle 2 = 25�), hit the button Read
ADC-Readout2, and hit the button Calculate. The soft-
ware will then calculate the appropriate V

and Sen-

sitivity.

Now, write the calculated values into the

HAL 800 for

programming the sensor and use the "STORE" com-
mand for permanently storing the EEPROM registers.

Step 3: Locking the Sensor

The last step is activating the LOCK function with the
"LOCK" command. The sensor is now locked and does
not respond to any programming or reading com-
mands.

Warning: This register cannot be reset!

4.5 V

0.5 V

2500

2350

Sensitivity =

5 V

2048

0.3378

= 4.5 V

2048

2500 *

0.3378) * 5 V

= 2.438 V

�30

�20

�10

�

Angle

OUT

Clamp-high = 4.5 V

Clamp-low = 0.5 V

Calibration point 2

Calibration point 1

Fig. 2�8: Example for output characteristics

HAL 800

Micronas

3.4. Absolute Maximum Ratings

Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in
the "Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute
maximum ratings conditions for extended periods may affect device reliability.

3.5. Recommended Operating Conditions

Symbol

Parameter

Pin No.

Min.

Max.

Unit

Supply Voltage

8.5

Supply Voltage

14.4

1) 2)

14.4

1) 2)

Reverse Supply Current

Current through Protection Device

1 or 3

300

OUT

Output Voltage

8.5

14.4

3) 2)

OUT

Excess of Output Voltage
over Supply Voltage

3,1

OUT

Continuous Output Current

Output Short Circuit Duration

min

Storage Temperature Range

150

�C

Junction Temperature Range

170

150

�C
�C

as long as T

Jmax

is not exceeded

t < 10 minutes (V

DDmin

15 V for t < 1min, V

DDmax

= 16 V for t < 1min)

as long as T

Jmax

is not exceeded, output is not protected to external 14 V-line (or to

14 V)

t < 2 ms

t < 1000h

internal protection resistor = 100

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Supply Voltage

4.5

5.5

OUT

Continuous Output Current

Load Resistor

4.5

Load Capacitance

0.33

1000

HAL 800

Micronas

3.6. Electrical Characteristics

at T

40 �C to +170 �C, V

= 4.5 V to 5.5 V, after programming, as not otherwise specified in Conditions.

Typical Characteristics for T

= 25 �C and V

= 5 V.

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Conditions

Supply Current

= 25 �C, V

= 4.5 V to 8.5 V

Supply Current
over Temperature Range

DDZ

Overvoltage Protection
at Supply

17.5

= 25 mA, T

= 25 �C, t = 20 ms

Overvoltage Protection
at Output

19.5

= 10 mA, T

= 25 �C, t = 20 ms

Resolution

bit

ratiometric to V

Accuracy Error over all

= 4.7 k

(% of supply voltage)

INL

Non-Linearity of Output Voltage
over Temperature

% of supply voltage

Ratiometric Error of Output
over Temperature
(Error in V

OUT

/ V

)

OUT1

- V

OUT2

> 2 V

during calibration procedure

OUTCL

Accuracy of Output Voltage at
Clamping Low Voltage over
Temperature Range

= 4.7 k

, V

= 5 V

OUTCH

Accuracy of Output Voltage at
Clamping High Voltage over
Temperature Range

= 4.7 k

, V

= 5 V

OUTH

Output High Voltage

4.65

4.8

= 5 V,

1 mA

OUT

1mA

OUTL

Output Low Voltage

0.2

0.35

= 5 V,

1 mA

OUT

1mA

ADC

Internal ADC Frequency

120

128

140

kHz

= 25 �C

ADC

Internal ADC Frequency over
Temperature Range

110

128

150

kHz

= 4.5 V to 8.5 V

r(O)

Response Time of Output

2
1

4
2

ms
ms

3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 2 kHz
C

= 10 nF, time from 10% to 90% of

final output voltage for a steplike
signal B

step

from 0 mT to B

max

d(O)

Delay Time of Output

0.1

0.5

POD

Power-Up Time (Time to reach
stabilized Output Voltage)

3
2

5
3

3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 2 kHz
90% of V

OUT

Small Signal Bandwidth (

3 dB)

kHz

< 10 mT;

3 dB Filter frequency = 2 kHz

OUTn

Noise Output Voltage

magnetic range = 90 mT

OUT

Output Resistance over Recom-
mended Operating Range

OUTL

OUT

OUTH

thJA

TO-92UT

Thermal Resistance Junction to
Soldering Point

150

200

K/W

Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = V

/4096

peak-to-peak value exceeded: 5%

if more than 50% of the selected magnetic field range are used

HAL 800

Micronas

3.7. Magnetic Characteristics

at T

40 �C to +170 �C, V

= 4.5 V to 5.5 V, after programming, as not otherwise specified in Conditions.

Typical Characteristics for T

= 25 �C and V

= 5 V.

3.8. Typical Characteristics

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Test Conditions

Offset

Magnetic Offset

B = 0 mT, I

OUT

= 0 mA, T

= 25 �C

Offset

Magnetic Offset Change
due to T

�

T/K

B = 0 mT, I

OUT

= 0 mA

Hysteresis

Magnetic Hysteresis

�

Range = 30 mT, Filter = 500 Hz

Magnetic Slew Rate

12
50

mT/ms

Filter frequency = 500 Hz
Filter frequency = 2 kHz

meff

Magnetic RMS Broadband
Noise

�

BW = 10 Hz to 2 kHz

Cflicker

Corner Frequency of 1/f Noise

B = 0 mT

Cflicker

Corner Frequency of 1/frms
Noise

100

B = 65 mT, T

= 25 �C

�20

�15

�10

�5

�15 �10

�5

20 V

= �40

�

= 25

�

=150

�

Fig. 3�2: Typical current consumption
versus supply voltage

�50

100

150

200

�

= 5 V

Fig. 3�3: Typical current consumption
versus ambient temperature

HAL 800

Micronas

�1.5

�1.0

�0.5

0.0

0.5

1.0

1.5 mA

OUT

= 25

�

= 5 V

Fig. 3�4: Typical current consumption
versus output current

�40

�35

�30

�25

�20

�15

�10

�5

100

1000

10000 Hz

signal

OUT

�3

Filter: 500 Hz

Filter: 2 kHz

Fig. 3�5: Typical output voltage
versus signal frequency

�1

�0.8

�0.6

�0.4

�0.2

�0.0

0.2

0.4

0.6

0.8

1.0

8 V

OUT

= 0.82

OUT

= 0.66

OUT

= 0.5

OUT

= 0.34

OUT

= 0.18

Fig. 3�6: Typical ratiometric error
versus supply voltage

100

120

�50

100

150

200

�

1/sensitivity

TC = 16, TCSQ = 8

TC = 0, TCSQ = 12

TC = �20, TCSQ = 12

TC = �31, TCSQ = 0

Fig. 3�7: Typical 1/sensitivity
versus ambient temperature

HAL 800

Micronas

4. Application Notes

4.1. Application Circuit

For EMC protection, it is recommended to add each a
ceramic 4.7 nF capacitor between ground and the sup-
ply voltage respectively the output voltage pin. In addi-
tion, the input of the controller unit should be pulled-
down with a 4.7 kOhm resistor and a ceramic 4.7 nF
capacitor.

Please note that during programming, the sensor will
be supplied repeatedly with the programming voltage
of 12 V for 100 ms. All components connected to the
V

line at this time must be able to resist this voltage.

Fig. 4�1: Recommended application circuit

4.2. Temperature Compensation

The relation between the temperature coefficient of the
magnet and the corresponding TC and TCSQ codes
for a linear compensation is given in the following
table. In addition to the linear change of the magnetic
field with temperature, the curvature can be adjusted,
too. For that purpose, TC and TCSQ have to be
changed to combinations that are not given in the
table. Please contact Micronas for more detailed infor-
mation.

Temperature
Coefficient of
Magnet (ppm/K)

TCSQ

700

600

500

400

300

200

100

OUT

GND

4.7 nF

HAL800

4.7 k

�

4.7 nF

100

200

300

400

500

600

700

800

900

1000

1100

1200

1300

1400

1500

1600

1700

1800

1900

2000

2100

2200

2300

2400

2500

2600

2700

2800

2900

Temperature
Coefficient of
Magnet (ppm/K)

TCSQ

HAL 800

Micronas

4.3. Ambient Temperature

Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature T

) is higher

than the temperature outside the package (ambient
temperature T

= T

At static conditions, the following equation is valid:

T = I

* V

* R

thJA

For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
I

and R

, and the max. value for V

from the appli-

cation.

For V

= 5.5 V, R

= 200 K/W and I

= 10 mA the

temperature difference

T = 11 K.

For all sensors, the junction temperature T

is speci-

fied. The maximum ambient temperature T

Amax

can be

calculated as:

Amax

= T

Jmax

4.4. EMC and ESD

The HAL 800 is designed for a stabilized 5 V supply.
Interferences and disturbances conducted along the
12 V onboard system (product standards DIN40839
part 1 or ISO 7637 part 1) are not relevant for these
applications.

For applications with disturbances by capacitive or
inductive coupling on the supply line or radiated distur-
bances, the application circuit shown in Fig. 4�1 is rec-
ommended.

Applications with this arrangement passed the EMC
tests according to the product standards DIN 40839
part 3 (Electrical transient transmission by capacitive
or inductive coupling) and part 4 (Radiated distur-
bances).

Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.

HAL 800

Micronas

5. Programming of the Sensor

5.1. Definition of Programming Pulses

The sensor is addressed by modulating a serial tele-
gram on the supply voltage. The sensor answers with a
serial telegram on the output pin.

The bits in the serial telegram have a different Bit time
for the V

-line and the output. The Bit time for the

-line is defined through the length of the Sync Bit

at the beginning of each telegram. The Bit time for the
output is defined through the Acknowledge Bit.

A logical 0 is coded as no voltage change within the Bit
time. A logical 1 is coded as a voltage change between
50% and 80% of the Bit time. After each bit a voltage
change occurs.

5.2. Definition of the Telegram

Each telegram starts with the Sync Bit (logical 0), 3
bits for the Command (COM), the Command Parity Bit
(CP), 4 bits for the Address (ADR), and the Address
Parity Bit (AP).

There are 3 kinds of telegrams:

� Write a register (see Fig. 5�2)

After the AP Bit follow 14 Data Bits (DAT) and the
Data Parity Bit (DP). If the telegram is valid and the

command has been processed the sensor answers
with an Acknowledge Bit (logical 0) on the output.

� Read a register (see Fig. 5�3)

After evaluating this command the sensor answers
with the Acknowledge Bit, 14 Data Bits, and the
Data Parity Bit on the output.

� Programming the EEPROM cells (see Fig. 5�4)

After evaluating this command the sensor answers
with the Acknowledge Bit. After the delay time t

the

supply voltage rises up to the programming voltage.

Fig. 5�1: Definition of logical 0 and 1 bit

logical 0

DDH

DDL

logical 1

DDH

DDL

Table 5�1: Telegram parameters

Symbol

Parameter

Pin

Min.

Typ.

Max.

Unit

Remarks

DDL

Supply Voltage for Low Level
during Programming

5.6

DDH

Supply Voltage for High Level
during Programming

6.8

8.0

8.5

Rise time

0.05

Fall time

0.05

Bit time on V

3.4

3.5

3.6

is defined through the Sync Bit

pOUT

Bit time on output pin

pOUT

is defined through the

Acknowledge Bit

Voltage Change for logical 1

1, 3

% of t

or t

pOUT

DDPROG

Supply Voltage for
Programming the EEPROM

11.95

12.1

PROG

Programming Time for EEPROM

100

105

Rise time of programming voltage

0.2

0.5

Fall time of programming voltage

Delay time of programming voltage
after Acknowledge

0.5

0.7

HAL 800

Micronas

5.3. Telegram Codes

Sync Bit

Each telegram starts with the Sync Bit. This logical 0
pulse defines the exact timing for t

Command Bits (COM)

The Command code contains 3 bits and is a binary
number. Table 5�2 shows the available commands and
the corresponding codes for the HAL 800.

Command Parity Bit (CP)

This parity bit is 1, if the number of zeros within the 3
Command Bits is uneven. The parity bit is 0, if the
number of zeros is even.

Address Bits (ADR)

The Address code contains 4 bits and is a binary num-
ber.

Table 5�3 shows the available addresses for the

HAL 800 registers.

Address parity bit (AP)

This parity bit is 1, if the number of zeros within the 4
Address bits is uneven. The parity bit is 0, if the num-
ber of zeros is even.

Data Bits (DAT)

The 14 Data Bits contain the register information.

The registers use different number formats for the Data
Bits. These formats are explained in Section 5.4.

In the Write command the last bits are valid. If for
example the TC register (6 bits) is written, only the last
6 bits are valid.

In the Read command the first bits are valid. If for
example the TC register (6 bits) is read, only the first 6
bits are valid.

Data Parity Bit (DP)

This parity bit is 1, if the number of zeros within the
binary number is even. The parity bit is 0, if the number
of zeros is uneven.

Table 5�2: Available Commands

Command

Code

Explanation

READ

read a register

WRITE

write a register

PROM

program all nonvolatile registers (except the lock bits)

ERASE

erase all nonvolatile registers (except the lock bits)

LOCKI

lock Micronas lockable register

LOCK

lock the whole device and switch permanently to the analog-mode

Please note:
The Micronas lock bit (LOCKI) has already been set during production and cannot be reset.

HAL 800

Micronas

5.4. Number Formats

Binary number:

The most significant bit is given as first, the least signif-
icant bit as last digit.

Example:

101001

represents 41 decimal.

Signed binary number:

The first digit represents the sign of the following
binary number (1 for negative, 0 for positive sign).

Example:

0101001

represents +41 decimal

1101001

represents

41 decimal

Two-complementary number:

The first digit of positive numbers is 0, the rest of the
number is a binary number. Negative numbers start
with 1. In order to calculate the absolute value of the
number, you have to calculate the complement of the
remaining digits and to add 1.

Example:

0101001

represents +41 decimal

1010111

represents

41 decimal

Micronas registers (read only for customers)

Table 5�3: Available register addresses

Parameter

Code

Data
Bits

Format

Customer

Remark

CLAMP-LOW

binary

read/write/program

Low clamping voltage

CLAMP-HIGH

binary

read/write/program

High clamping voltage

VOQ

two compl.
binary

read/write/program

SENSITIVITY

signed binary

read/write/program

MODE

binary

read/write/program

Range and filter parameters
see Table 5�4 for details

LOCKR

binary

lock

Lock Bit

ADC-READOUT

two compl.
binary

read

signed binary

read/write/program

TCSQ

binary

read/write/program

Parameter

Code

Data
Bits

Format

Remark

OFFSET

two compl. binary

ADC offset adjustment

FOSCAD

binary

Oscillator frequency adjustment

SPECIAL

special settings

IMLOCK

binary

Lock Bit for the Micronas registers

HAL 800

Micronas

5.5. Register Information

CLAMP-LOW

� The register range is from 0 up to 1023.

� The register value is calculated by:

CLAMP-HIGH

� The register range is from 0 up to 2047.

� The register value is calculated by:

VOQ

� The register range is from

1024 up to 1023.

� The register value is calculated by:

SENSITIVITY

� The register range is from

8192 up to 8191.

� The register value is calculated by:

MODE

� The register range is from 0 up to 7 and contains the

settings for FILTER and RANGE

ADC-READOUT

� This register is read only.

� The register range is from

8192 up to 8191.

TC and TCSQ

� The TC register range is from

31 up to 31,

� The TCSQ register range is from 0 up to 31.

Please refer Section 4.2. on page 17 for the recom-
mended values.

5.6. Programming Information

If you want to change the content of any register
(except the lock registers) you have to write the
desired value into the corresponding RAM register at
first.

If you want to permanently store the value in the
EEPROM, you have to send an ERASE command first
and a PROM command afterwards. The address within
the ERASE and PROM command is not important.
ERASE and PROM acts on all registers in parallel.

If you want to change all registers of the HAL 800, you
can send all writing commands one after each other
and send one ERASE and PROM command at the
end.

Low Clamping Voltage

* 2048

CLAMP-LOW =

High Clamping Voltage

* 2048

CLAMP-HIGH =

* 1024

VOQ =

Sensitivity

2048

SENSITIVITY =

Table 5�4: Parameters for the MODE register

MODE

FILTER

3 dB Frequency

RANGE

Magnetic Field Range

2 kHz

30 mT...30 mT

2 kHz

75 mT...75 mT

2 kHz

90 mT...90 mT

2 kHz

150 mT...150 mT

500 Hz

30 mT...30 mT

500 Hz

75 mT...75 mT

500 Hz

90 mT...90 mT

500 Hz

150 mT...150 mT

All information and data contained in this data sheet are without any
commitment, are not to be considered as an offer for conclusion of a
contract, nor shall they be construed as to create any liability. Any new
issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirmation
form; the same applies to orders based on development samples deliv-
ered. By this publication, Micronas GmbH does not assume responsibil-
ity for patent infringements or other rights of third parties which may
result from its use.
Further, Micronas GmbH reserves the right to revise this publication and
to make changes to its content, at any time, without obligation to notify
any person or entity of such revisions or changes.
No part of this publication may be reproduced, photocopied, stored on a
retrieval system, or transmitted without the express written consent of
Micronas GmbH.

HAL 800

Micronas

Micronas GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: docservice@micronas.com
Internet: www.micronas.com

Printed in Germany
Order No. 6251-441-1DS

6. Data Sheet History

1. Advance information: "HAL 800 Programmable Lin-
ear Hall Effect Sensor, Aug. 24, 1998, 6251-441-1AI.
First release of the advance information.

2. Final data sheet: "HAL 800 Programmable Linear
Hall Effect Sensor, Oct. 20, 1999, 6251-441-1DS. First
release of the final data sheet.

Электронный компонент: HAL800UT-C

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