HAL 810

DATA SHEET

Nov. 22, 2002; 6251-536-2DS

Micronas

Contents

Page

Section

Title

Introduction

1.1.

Major Applications

1.2.

Features

1.3.

Marking Code

1.3.1.

Special Marking of Prototype Parts

1.4.

Operating Junction Temperature Range (T

)

1.5.

Hall Sensor Package Codes

1.6.

Solderability

1.7.

Pin Connections and Short Descriptions

Functional Description

2.1.

General Function

2.2.

Digital Signal Processing and EEPROM

2.3.

Calibration Procedure

2.3.1.

General Procedure

2.3.2.

Calibration of the Angle Sensor

Specifications

3.1.

Outline Dimensions

3.2.

Dimensions of Sensitive Area

3.3.

Position of Sensitive Area

3.4.

Absolute Maximum Ratings

3.4.1.

Storage and Shelf Life

3.5.

Recommended Operating Conditions

3.6.

Electrical Characteristics

3.7.

Magnetic Characteristics

3.8.

Open-Circuit Detection

3.9.

Typical Characteristics

Application Notes

4.1.

Application Circuit

4.2.

Temperature Compensation

4.3.

Undervoltage Behavior

4.4.

Ambient Temperature

4.5.

EMC and ESD

Programming of the Sensor

5.1.

Definition of Programming Pulses

5.2.

Definition of the Telegram

5.3.

Telegram Codes

5.4.

Number Formats

5.5.

5.6.

Programming Information

Data Sheet History

DATA SHEET

HAL 810

Micronas

Nov. 22, 2002; 6251-536-2DS

Programmable Linear Hall Effect Sensor

Release Note: Revision bars indicate significant
changes to the previous edition.

1. Introduction

The HAL 810 is a new member of the Micronas family
of programmable linear Hall sensors. The linear output
is provided as the duty cycle of a pulse-width modu-
lated output signal (PWM signal). As an extension to
the HAL 800, it offers open-circuit detection.

The HAL 810 is a universal magnetic field sensor with
a linear output based on the Hall effect. The IC is
designed and produced in sub-micron CMOS technol-
ogy and can be used for angle or distance measure-
ments if combined with a rotating or moving magnet.
The major characteristics, such as magnetic field
range, sensitivity, output quiescent signal (output duty
cycle at B = 0 mT), and output duty cycle range are
programmable in a non-volatile memory.

The HAL 810 features a temperature-compensated
Hall plate with chopped offset compensation, an A/D
converter, digital signal processing, an EEPROM
memory with redundancy and lock function for the cali-
bration data, a serial interface for programming the
EEPROM, and protection devices at all pins. The inter-
nal digital signal processing is of great benefit as ana-
log offsets, temperature shifts, and mechanical stress
do not lower the sensor accuracy.

The HAL 810 is programmable by modulating the sup-
ply voltage. No additional programming pin is needed.
The easy programmability allows a 2-point calibration
by adjusting the output signal directly to the input sig-
nal (like mechanical angle, distance, or current). Indi-
vidual adjustment of each sensor during the cus-
tomer's manufacturing process is possible. With this
calibration procedure, the tolerances of the sensor, the
magnet, and the mechanical positioning can be com-
pensated in the final assembly. This offers a low-cost
alternative for all applications that presently need
mechanical adjustment or laser trimming for calibrating
the system.

In addition, the temperature compensation of the Hall
IC can be suited to all common magnetic materials by
programming first and second order temperature coef-
ficients of the Hall sensor sensitivity. This enables
operation over the full temperature range with high
accuracy.

The calculation of the individual sensor characteristics
and the programming of the EEPROM memory can
easily be done with a PC and the application kit from
Micronas.

The sensor is designed for hostile industrial and auto-
motive applications and operates with a supply voltage

of typically 5 V in the ambient temperature range from

40 �C up to 150 �C. The HAL 810 is available in the

very small leaded package TO-92UT.

1.1. Major Applications

Due to the sensor's versatile programming character-
istics, the HAL 810 is the optimal system solution for
applications such as:

� contactless potentiometers,

� rotary sensors,

� distance measurements,

� magnetic field and current measurement.

WARNING:

DO NOT USE THESE SENSORS IN LIFE-
SUPPORTING SYSTEMS, AVIATION, AND
AEROSPACE APPLICATIONS.

1.2. Features

� high-precision linear Hall effect sensor with digital

signal processing

� PWM output signal with a refresh rate of typically

125 Hz and up to 11 Bit resolution

� multiple programmable magnetic characteristics in a

non-volatile memory (EEPROM) with redundancy
and lock function

� open-circuit feature (ground and supply line break

detection)

� temperature characteristics programmable for

matching all common magnetic materials

� programmable clamping function

� programming via modulation of the supply voltage

� operation from

40 �C up to 150 �C

ambient temperature

� operation with 4.5 V to 5.5 V supply voltage in spec-

ification and functions with up to 8.5 V

� total error < 2.0% over operating voltage range and

temperature range

� operation with static magnetic fields and dynamic

magnetic fields

� overvoltage and reverse-voltage protection at all pins

� magnetic characteristics extremely robust against

mechanical stress

� short-circuit protected push-pull output

� EMC and ESD optimized design

HAL 810

DATA SHEET

Nov. 22, 2002; 6251-536-2DS

Micronas

1.3. Marking Code

The HAL 810 has a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.

1.3.1. Special Marking of Prototype Parts

Prototype parts are coded with an underscore beneath
the temperature range letter on each IC. They may be
used for lab experiments and design-ins but are not
intended for the use in qualification tests or as produc-
tion parts.

1.4. Operating Junction Temperature Range (T

)

The Hall sensors from Micronas are specified to the
chip temperature (junction temperature T

A: TJ =

40 �C to +170 �C

K: TJ =

40 �C to +140 �C

The relationship between ambient temperature (T

)

and junction temperature is explained in Section 4.4.
on page 18.

1.5. Hall Sensor Package Codes

Example: HAL810UT-K

Type:

810

Package:

TO-92UT

Temperature Range:

40 �C to +140 �C

Hall sensors are available in a wide variety of packag-
ing versions and quantities. For more detailed informa-
tion, please refer to the brochure: "Ordering Codes for
Hall Sensors".

1.6. Solderability

Package TO-92UT: according to IEC68-2-58

During soldering reflow processing and manual
reworking, a component body temperature of 260 �C
should not be exceeded.

Components stored in the original package should pro-
vide a shelf life of at least 12 months, starting from the
date code printed on the package labels, even in envi-
ronments as extreme as 40 �C and 90% relative
humidity.

1.7. Pin Connections and Short Descriptions

Fig. 1�1: Pin configuration

Type

Temperature Range

HAL 810

810A

810K

HALXXXPA-T

Temperature Range: A or K

Package: UT for TO-92UT

Type: 810

Pin
No.

Pin Name

Type

Short Description

VDD

Supply Voltage and
Programming Pin

GND

Ground

OUT

Push-Pull Output

OUT

GND

DATA SHEET

HAL 810

Micronas

Nov. 22, 2002; 6251-536-2DS

2. Functional Description

2.1. General Function

The HAL 810 is a monolithic integrated circuit which
provides a pulse-width modulated output signal
(PWM). The duty cycle of the PWM signal is propor-
tional to the magnetic flux through the Hall plate.

The external magnetic field component perpendicular
to the branded side of the package generates a Hall
voltage. The Hall IC is sensitive to magnetic north and
south polarity. This voltage is converted to a digital
value, processed in the Digital Signal Processing Unit
(DSP) according to the settings of the EEPROM regis-
ters, converted to a pulse-width modulated output sig-
nal, and stabilized by a push-pull output transistor
stage. The function and the parameters for the DSP
are explained in Section 2.2. on page 7.

The setting of the LOCK register disables the program-
ming of the EEPROM memory for all time. This regis-
ter cannot be reset.

As long as the LOCK register is not set, the output
characteristics can be adjusted by programming the
EEPROM registers. The IC is addressed by modulat-
ing the supply voltage (see Fig. 2�1). In the supply
voltage range from 4.5 V to 5.5 V, the sensor gener-

ates a PWM output signal. After detecting a command,
the sensor reads or writes the memory and answers
with a digital signal on the output pin. The PWM output
is switched off during the communication.

The open-circuit detection provides a defined output
voltage if the V

or GND line is broken. Internal tem-

perature compensation circuitry and the chopped off-
set compensation enables operation over the full tem-
perature range with minimal changes in accuracy and
high offset stability. The circuitry also rejects offset
shifts due to mechanical stress from the package. The
non-volatile memory consists of redundant EEPROM
cells. In addition, the sensor IC is equipped with
devices for overvoltage and reverse-voltage protection
at all pins.

Fig. 2�1: Programming with V

modulation

Fig. 2�2: HAL 810 block diagram

)

HAL

810

GND

OUT

PWM

digital protocol

Internally

Temperature

Oscillator

Switched

100

Digital

Output

OPA

OUT

GND

Supply

EEPROM Memory

Lock Control

Digital

stabilized
Supply and
Protection
Devices

Dependent
Bias

Protection
Devices

Hall Plate

Signal
Processing

Conditioning

Level
Detection

Output

A/D
Converter

10 k

Open-circuit
detection

HAL 810

DATA SHEET

Nov. 22, 2002; 6251-536-2DS

Micronas

Fig. 2�3: Details of EEPROM and Digital Signal Processing

MODE Register

FILTER

6 bit

TCSQ

5 bit

DCOQ

11 bit

MIN-

10 bit

11 bit

LOCK

1 bit

3 bit

RANGE

3 bit

EEPROM Memory

A/D
Converter

Digital
Filter

Multiplier

Adder

Limiter

Output
Conditioning

Digital Signal Processing

ADC-READOUT Register

14 bit

Digital

Lock

Control

DUTY

MAX-
DUTY

Output

Micronas

Registers

DCSENSITIVITY

14 bit

100

�40 �30 �20 �10

40 mT

Output
Duty
Cycle

= 50%

Max-Duty = 97%

DCSensitivity = 0.3

Min-Duty = 3%

Range = 30 mT

Filter = 500 Hz

Fig. 2�4: Example for output characteristics

100

�150 �100

�50

100

150 mT

Max-Out = 90%

DCSensitivity = -1.36

= -10%

Min-Out = 10%

Range = 100 mT
Filter = 2 kHz

Output
Duty
Cycle

Fig. 2�5: Example for output characteristics

DATA SHEET

HAL 810

Micronas

Nov. 22, 2002; 6251-536-2DS

2.2. Digital Signal Processing and EEPROM

The DSP is the main part of this sensor and performs
the signal conditioning. The parameters for the DSP
are stored in the EEPROM registers. The details are
shown in Fig. 2�3.

Terminology:

MIN-DUTY: name of the register or register value

Min-Duty:

name of the parameter

The EEPROM registers consist of three groups:

Group 1 contains the registers for the adaptation of the
sensor to the magnetic circuit: Mode for selecting the
magnetic field range and filter frequency, TC and
TCSQ for the temperature characteristics of the mag-
netic sensitivity.

Group 2 contains the registers for defining the output
characteristics: DCSENSITIVITY, DCOQ, MIN-DUTY,
and MAX-DUTY. The output characteristic of the sen-
sor is defined by these 4 parameters (see Fig. 2�5 and
Fig. 2�6 for examples).

� The parameter DC

(Output Quiescent Duty

Cycle) corresponds to the duty cycle at B = 0 mT.

� The parameter DCSensitivity defines the magnetic

sensitivity:

� The output duty cycle can be calculated as:

The output duty cycle range can be clamped by setting
the registers MIN-DUTY and MAX-DUTY in order to
enable failure detection (such as short-circuits to V

or GND and open connections).

Group 3 contains the Micronas registers and LOCK for
the locking of all registers. The Micronas registers are
programmed and locked during production and are
read-only for the customer. These registers are used
for oscillator frequency trimming, A/D converter offset
compensation, and several other special settings.

An external magnetic field generates a Hall voltage on
the Hall plate. The ADC converts the amplified positive
or negative Hall voltage (operates with magnetic north
and south poles at the branded side of the package) to
a digital value. Positive values correspond to a mag-
netic north pole on the branded side of the package.
The digital signal is filtered in the internal low-pass fil-
ter and is readable in the ADC-READOUT register.
Depending on the programmable magnetic range of
the Hall IC, the operating range of the A/D converter is
from

30 mT...+30 mT up to

150 mT...+150 mT.

During further processing, the digital signal is multi-
plied with the sensitivity factor, added to the quiescent
output duty cycle and limited according to Min-Duty
and Max-Duty. The result is converted to the duty
cycle of a pulse width modulated signal and stabilized
by a push-pull output transistor stage.

The ADC-Readout at any given magnetic field
depends on the programmed magnetic field range but
also on the filter frequency. Fig. 2�6 shows the typical
ADC-Readout values for the different magnetic field
ranges with the filter frequency set to 2 kHz. The rela-
tionship between the minimum and maximum ADC-
Readout values and the filter frequency setting is listed
in the following table.

OUT

* 2048

ADC-Readout * 100%

DCSensitivity =

OUT

DCSensitivity *

ADC-Readout / 2048 * 100% + DC

Filter Frequency

ADC-Readout range

80 Hz

3968...3967

160 Hz

1985...1985

500 Hz

5292...5290

1 kHz

2646...2645

2 kHz

1512...1511

�2000

�1500

�1000

�500

500

1000

1500

2000

�200�150�100 �50

50 100 150 200 mT

ADC-
READOUT

Range 150 mT

Filter = 2 kHz

Range 90 mT

Range 60 mT

Range 30 mT

Fig. 2�6: Example for output characteristics

HAL 810

DATA SHEET

Nov. 22, 2002; 6251-536-2DS

Micronas

Note: During application design, it should be taken

into consideration that the maximum and mini-
mum ADC-READOUT is not exceeded during
calibration and operation of the Hall IC. Conse-
quently, the maximum and minimum magnetic
fields that may occur in the operational range of
a specific application should not saturate the A/
D converter. Please note that the A/D converter
saturates at magnetic fields well above, respec-
tively below, the magnetic range limits. This
large safety band between specified magnetic
range and true operational range helps to avoid
saturation.

Range

The RANGE bits are the three lowest bits of the MODE
register; they define the magnetic field range of the
A/D converter.

Filter

The FILTER bits are the three highest bits of the
MODE register; they define the

3 dB frequency of the

digital low pass filter.

TC and TCSQ

The temperature dependence of the magnetic sensitiv-
ity can be adapted to different magnetic materials in
order to compensate for the change of the magnetic
strength with temperature. The adaptation is done by
programming the TC (Temperature Coefficient) and
the TCSQ registers (Quadratic Temperature Coeffi-
cient). Thereby, the slope and the curvature of the
temperature dependence of the magnetic sensitivity
can be matched to the magnet and the sensor assem-
bly. As a result, the output characteristic can be fixed
over the full temperature range. The sensor can com-
pensate for linear temperature coefficients ranging
from about

3100 ppm/K up to 400 ppm/K and qua-

dratic coefficients from about

5 ppm/K� to 5 ppm/K�.

Please refer to Section 4.2. on page 17 for the recom-
mended settings for different linear temperature coeffi-
cients.

DCSensitivity

The DCSENSITIVITY register contains the parameter
for the multiplier in the DSP. The DCSensitivity is pro-
grammable between

4 and 4. The register can be

changed in steps of 0.00049. DCSensitivity = 1 corre-
sponds to an increase of the output duty cycle by
100% if ADC-Readout increases by 2048.

For all calculations, the digital value of the A/D con-
verter is used. This digital information is derived from
the magnetic signal and is readable from the ADC-
READOUT register.

The DCOQ register contains the parameter for the
adder in the DSP. DC

is the output duty cycle with-

out external magnetic field (B = 0 mT, respectively
ADC-Readout = 0) and programmable from -100% to
100%. The register can be changed in steps of
0.0976%.

Note: If DC

is programmed as negative values, the

maximum output duty cycle is limited to:

For calibration in the system environment, a 2-point
adjustment procedure (see Section 2.3.) is recom-
mended. The suitable DCSensitivity and DC

values

Magnetic Field Range

Range

30 mT...30 mT

40 mT...40 mT

60 mT...60 mT

75 mT...75 mT

80 mT...80 mT

90 mT...90 mT

100 mT...100 mT

150 mT...150 mT

3 dB Frequency

Filter

80 Hz

160 Hz

500 Hz

1 kHz

2 kHz

OUT

* 2048

ADC-Readout * 100%

DCSensitivity =

OUTmax

= DC

+100%

DATA SHEET

HAL 810

Micronas

Nov. 22, 2002; 6251-536-2DS

for each sensor can be calculated individually by this
procedure.

Clamping Function

The output duty cycle range can be clamped in order
to detect failures like shorts of the output signal to V

or GND or an open circuit.

The MIN-DUTY register contains the parameter for the
lower limit. The minimum duty cycle is programmable
between 0% and 50% in steps of 0.0488%.

The MAX-DUTY register contains the parameter for
the upper limit. The maximum duty cycle is program-
mable between 0% and 100% in steps of 0.0488%.

LOCKR

By setting this 1-bit register, all registers will be locked,
and the sensor will no longer respond to any supply
voltage modulation.

Warning: This register cannot be reset!

ADC-READOUT

This 14-bit register delivers the actual digital value of
the applied magnetic field before the signal process-
ing. This register can be read out and is the basis for
the calibration procedure of the sensor in the system
environment.

2.3. Calibration Procedure

2.3.1. General Procedure

For calibration in the system environment, the applica-
tion kit from Micronas is recommended. It contains the
hardware for the generation of the serial telegram for
programming and the corresponding software for the
input of the register values.

In this section, programming of the sensor using this
programming tool is explained. Please refer to
Section 5. on page 19 for information about program-
ming without this tool.

For the individual calibration of each sensor in the cus-
tomer application, a two point adjustment is recom-
mended (see Fig. 2�7 for an example). When using
the application kit, the calibration can be done in three
steps:

Step 1: Input of the registers which need not be
adjusted individually

The magnetic circuit, the magnetic material with its
temperature characteristics, the filter frequency, and
low and high clamping duty cycles are given for this
application.

Therefore, the values of the following registers should
be identical for all sensors of the customer application.

� Filter

(according to the maximum signal frequency)

� Range

(according to the maximum magnetic field at the
sensor position)

� TC and TCSQ

(depends on the material of the magnet and the
other temperature dependencies of the application)

� Min-Duty and Max-Duty

(according to the application requirements)

Write and store the appropriate settings into the
HAL 810 registers.

HAL 810

DATA SHEET

Nov. 22, 2002; 6251-536-2DS

Micronas

Step 2: Calculation of DC

and DCSensitivity

The calibration points 1 and 2 can be set inside the
specified range. The corresponding values for DC

and DC

result from the application requirements.

For highest accuracy of the sensor, calibration points
near the minimum and maximum input signal are rec-
ommended. The difference of the duty cycle between
calibration point 1 and calibration point 2 should be
more than 70%.

Set the system to calibration point 1 and read the reg-
ister ADC-READOUT. The result is ADC-Readout1.

Now, set the system to calibration point 2, read the
register ADC-READOUT, and get ADC-Readout2.

With these readouts and the nominal duty cycles DC

and DC

, for the calibration points 1 and 2, respec-

tively, the values for DCSensitivity and DC

are cal-

culated as:

This calculation has to be done individually for each
sensor.

Next, write and store the calculated values for DCSen-
sitivity and DC

into the IC for adjusting the sensor.

The sensor is now calibrated for the customer applica-
tion. However, the programming can be changed
again and again if necessary.

Step 3: Locking the Sensor

The last step is activating the lock function with the
"LOCK" command. Please note that the LOCK function
becomes effective after power-down and power-up of
the Hall IC. The sensor is now locked and does not
respond to any programming or reading commands.

Warning: This register cannot be reset!

2.3.2. Calibration of the Angle Sensor

The following description explains the calibration pro-
cedure using an angle sensor as an example. The
required output characteristic is shown in Fig. 2�7.

� the angle range is from

25� to 25�

� temperature coefficient of the magnet:

500 ppm/K

Min-Duty

1,2

Max-Duty

DC2

DC1

ADC-Readout2

ADC-Readout1

DCSensitivity =

100%

2048

ADC-Readout1 * DCSensitivity * 100%

2048

= DC

100

�30

�20

�10

�

Angle

Output
Duty
Cycle

Max-Duty = 95%

Calibration Point 1

Min-Duty = 5%

Calibration Point 2

Fig. 2�7: Example for output characteristics

DATA SHEET

HAL 810

Micronas

Nov. 22, 2002; 6251-536-2DS

Step 1: Input of the registers which need not be
adjusted individually

The register values for the following registers are given
for all applications:

� Filter

Select the filter frequency: 500 Hz

� Range

Select the magnetic field range: 30 mT

� TC

For this magnetic material: 6

� TCSQ

For this magnetic material: 14

� Min-Duty

For our example: 5%

� Max-Duty

For our example: 95%

Enter these values in the software, and use the "write
and store" command for permanently writing the val-
ues in the registers.

Step 2: Calculation of DC

and DCSensitivity

There are two ways to calculate the values for DC

and DCSensitivity.

Manual Calculation:

Set the system to calibration point 1 (angle 1 =

25�)

and read the register ADC-Readout. For our example,
the result is ADC-Readout1 =

2500.

Next, set the system to calibration point 2
(angle 2 = 25�), and read the register ADC-Readout
again. For our example, the result is ADC-
Readout2 =

2350.

With these measurements and the targets DC

= 95%

and DC

= 5%, the values for DCSensitivity and DC

are calculated as

Software Calibration:

Use the menu CALIBRATE from the PC software and
enter the values 95% for DC

and 5% for DC

. Set the

system to calibration point 1 (angle 1 =

25�), press

the key "Read ADC-Readout1", set the system to cali-
bration point 2 (angle 2 = 25�), press the key "Read
ADC-Readout2", and hit the button "Calculate". The
software will then calculate the appropriate DC

and

DCSensitivity.

This calculation has to be done individually for each
sensor. Now, write the calculated values with the "write
and store" command into the HAL 810 for program-
ming the sensor.

Step 3: Locking the Sensor

The last step is to activate the lock function with the
"lock" command. Please note that the LOCK function
becomes effective after power-down and power-up of
the Hall IC. The sensor is now locked and does not
respond to any programming or reading commands.

Warning: This register cannot be reset!

95%

2350 + 2500

DCSensitivity =

100%

2048

0.3800

= 95%

2048

2500*

0.3800)*100%

= 48.61%

DATA SHEET

HAL 810

Micronas

Nov. 22, 2002; 6251-536-2DS

3.4. Absolute Maximum Ratings

Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in
the "Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute
maximum ratings conditions for extended periods may affect device reliability.

3.4.1. Storage and Shelf Life

Storage has no influence on the electrical and magnetic characteristics of the sensors. However, under disadvanta-
geous conditions, extended storage time can lead to alteration of the lead plating, which affects the soldering pro-
cess.

The permissible storage time (shelf life) of the sensors would be a minimum of 12 months, beginning from the date
of manufacture, if they are stored in the original package at a maximum of 40 �C ambient temperature and maximum
of 90% relative humidity.

3.5. Recommended Operating Conditions

Symbol

Parameter

Pin No.

Min.

Max.

Unit

Supply Voltage

8.5

Supply Voltage

14.4

1) 2)

14.4

1) 2)

Reverse Supply Current

Current through Protection Device

1 or 3

300

OUT

Output Voltage

8.5

14.4

3) 2)

OUT

Excess of Output Voltage
over Supply Voltage

3,1

OUT

Continuous Output Current

Output Short Circuit Duration

min

Junction Temperature Range

170

150

�C
�C

PROG

Number of Programming Cycles

100

as long as T

Jmax

is not exceeded

t < 10 min (V

DDmin

15 V for t < 1 min, V

DDmax

= 16 V for t < 1 min)

as long as T

Jmax

is not exceeded, output is not protected to external 14 V-line (or to

14 V)

t < 2 ms

t < 1000h

internal protection resistor = 100

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Supply Voltage

4.5

5.5

OUT

Continuous Output Current

Load Resistor

4.5

Load Capacitance

0.33

100

HAL 810

DATA SHEET

Nov. 22, 2002; 6251-536-2DS

Micronas

3.6. Electrical Characteristics

at T

40 �C to +170 �C, V

= 4.5 V to 5.5 V, after programming, if not otherwise specified in Conditions.

Typical Characteristics for T

= 25 �C and V

= 5 V.

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Conditions

Supply Current
over Temperature Range

DDZ

Overvoltage Protection
at Supply

17.5

= 25 mA, T

= 25 �C, t = 20 ms

Overvoltage Protection
at Output

19.5

= 10 mA, T

= 25 �C, t = 20 ms

Output Duty Cycle Resolution

bit

Accuracy Error over all

INL

Non-Linearity of Output Duty
Cycle over Temperature

MIN-

DUTY

Accuracy of Minimum Duty Cycle
over Temperature Range

MAX-

DUTY

Accuracy of Maximum Duty
Cycle over Temperature Range

OUTH

Output High Voltage

4.8

= 5 V,

1 mA

OUT

OUTL

Output Low Voltage

0.2

= 5 V,

1 mA

OUT

1 mA

PWM

PWM Output Frequency over
Temperature Range

105

125

145

ADC

Internal ADC Frequency over
Temperature Range

110

128

150

kHz

POD

Power-Up Time (Time to reach
valid duty cycle)

OUT

Output Resistance over
Recommended Operating
Range

OUTLmax

OUT

OUTHmin

thJA

TO-92UT

Thermal Resistance Junction to
Soldering Point

150

200

K/W

if the Hall IC is programmed accordingly

estimation of over all accuracy, if more than 50% of the selected magnetic field range are used and the Hall IC is programmed accordingly

DATA SHEET

HAL 810

Micronas

Nov. 22, 2002; 6251-536-2DS

3.7. Magnetic Characteristics

at T

40 �C to +170 �C, V

= 4.5 V to 5.5 V, after programming, if not otherwise specified in Conditions.

Typical Characteristics for T

= 25 �C and V

= 5 V.

3.8. Open-Circuit Detection

at T

40 �C to +170 �C, Typical Characteristics for T

= 25 �C

3.9. Typical Characteristics

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Test Conditions

Offset

Magnetic Offset

B = 0 mT, T

= 25 �C

Offset

Magnetic Offset Change
due to T

�

T/K

B = 0 mT

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Test Conditions

OUT

Output voltage
at open V

line

0.2

= 5 V

= 10 k

to GND

OUT

Output voltage at
open GND line

4.7

4.8

= 5 V

= 10 k

to GND

�20

�15

�10

�5

�15 �10

�5

20 V

= �40

�

= 25

�

=150

�

Fig. 3�2: Typical current consumption
versus supply voltage

�50

100

150

200

�

= 5 V

Fig. 3�3: Typical current consumption
versus ambient temperature

HAL 810

DATA SHEET

Nov. 22, 2002; 6251-536-2DS

Micronas

�1.5

�1.0

�0.5

0.0

0.5

1.0

1.5 mA

OUT

= 25

�

= 5 V

Fig. 3�4: Typical current consumption
versus output current

�1

�0.8

�0.6

�0.4

�0.2

�0.0

0.2

0.4

0.6

0.8

1.0

�50

100

150

200

�

Offset

TC = 16, TCSQ = 8

TC = 0, TCSQ = 12

TC = �20, TCSQ = 12

Fig. 3�5: Typical magnetic offset
versus ambient temperature

100

120

�50

100

150

200

�

1/sensitivity

TC = 16, TCSQ = 8

TC = 0, TCSQ = 12

TC = �20, TCSQ = 12

TC = �31, TCSQ = 0

Fig. 3�6: Typical 1/sensitivity
versus ambient temperature

�1

�0.8

�0.6

�0.4

�0.2

�0.0

0.2

0.4

0.6

0.8

1.0

�40

�20

40 mT

INL

Range = 30 mT

Fig. 3�7: Typical nonlinearity
versus magnetic field

DATA SHEET

HAL 810

Micronas

Nov. 22, 2002; 6251-536-2DS

4. Application Notes

4.1. Application Circuit

For EMC protection, it is recommended to connect one
ceramic 4.7 nF capacitor each between ground and
the supply voltage, respectively the output pin. In addi-
tion, the input of the controller unit should be pulled-
down with a 4.7 kOhm resistor and a ceramic 4.7 nF
capacitor.

Please note that during programming, the sensor will
be supplied repeatedly with the programming voltage
of 12 V for 100 ms. All components connected to the
V

line at this time must be able to resist this voltage.

Fig. 4�1: Recommended application circuit

4.2. Temperature Compensation

The relationship between the temperature coefficient
of the magnet and the corresponding TC and TCSQ
codes for linear compensation is given in the following
table. In addition to the linear change of the magnetic
field with temperature, the curvature can be adjusted
as well. For this purpose, other TC and TCSQ combi-
nations are required which are not shown in the table.
Please contact Micronas for more detailed information
on this higher order temperature compensation.

The HAL 800 and HAL 810 contain the same tempera-
ture compensation circuits. If an optimal setting for the
HAL 800 is already available, the same settings may
be used for the HAL 810.

OUT

GND

4.7 nF

HAL810

4.7 k

�

4.7 nF

Temperature
Coefficient of
Magnet (ppm/K)

TCSQ

400

300

200

100

130

170

200

240

280

320

360

410

450

500

550

600

650

700

750

810

860

910

960

1020

1070

1120

1180

1250

1320

HAL 810

DATA SHEET

Nov. 22, 2002; 6251-536-2DS

Micronas

4.3. Undervoltage Behavior

In a voltage range of below 4.5 V to approximately
3.5 V, the typical operation of the HAL 810 is given
and predictable for the most sensors. Some of the
parameters may be out of the specification. Below
about 3.5 V, the digital processing is reset. If the sup-
ply voltage rises above approx. 3.5 V once again, a
startup time of about 20 �s elapses, for the digital sig-
nal processing to occur.

4.4. Ambient Temperature

Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature T

) is higher

than the temperature outside the package (ambient
temperature T

= T

At static conditions, the following equation is valid:

T = I

* V

* R

thJA

For typical values, use the typical parameters. For
worst case calculation, use the maximum parameters
for I

and R

, and the maximum value for V

from

the application.

For V

= 5.5 V, R

= 200 K/W and I

= 10 mA the

temperature difference

T = 11 K.

For all sensors, the junction temperature T

is speci-

fied. The maximum ambient temperature T

Amax

can be

calculated as:

Amax

= T

Jmax

4.5. EMC and ESD

The HAL 810 is designed for a stabilized 5 V supply.
Interferences and disturbances conducted along the
12 V on-board system (product standards DIN40839
part 1 or ISO 7637 part 1) are not relevant for these
applications.

For applications with disturbances by capacitive or
inductive coupling on the supply line or radiated distur-
bances, the application circuit shown in Fig. 4�1 is rec-
ommended. Applications with this arrangement
passed the EMC tests according to the product stan-
dards DIN 40839 part 3 (Electrical transient transmis-
sion by capacitive or inductive coupling) and part 4
(Radiated disturbances).

Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.

1380

1430

1500

1570

1640

1710

1780

1870

1950

2030

2100

2180

2270

2420

2500

2600

2700

2800

2900

3000

3100

Temperature
Coefficient of
Magnet (ppm/K)

TCSQ

DATA SHEET

HAL 810

Micronas

Nov. 22, 2002; 6251-536-2DS

5. Programming of the Sensor

5.1. Definition of Programming Pulses

The sensor is addressed by modulating a serial tele-
gram on the supply voltage. The sensor answers with
a serial telegram on the output pin.

The bits in the serial telegram have a different bit time
for the V

-line and the output. The bit time for the

-line is defined through the length of the Sync Bit

at the beginning of each telegram. The bit time for the
output is defined through the Acknowledge Bit.

A logical "0" is coded as no voltage change within the
bit time. A logical "1" is coded as a voltage change
between 50% and 80% of the bit time. After each bit, a
voltage change occurs.

5.2. Definition of the Telegram

Each telegram starts with the Sync Bit (logical 0), 3
bits for the Command (COM), the Command Parity Bit
(CP), 4 bits for the Address (ADR), and the Address
Parity Bit (AP).

There are different telegram formats:

� Write a register (see Fig. 5�2)

After the AP Bit, follow 14 Data Bits (DAT) and the
Data Parity Bit (DP). If the telegram is valid and the
command has been processed, the sensor answers
with an Acknowledge Bit (logical 0) on the output.

� Read a register (see Fig. 5�3)

After evaluating this command, the sensor answers
with the Acknowledge Bit, 14 Data Bits, and the
Data Parity Bit on the output.

� Programming the EEPROM cells (see Fig. 5�4)

After evaluating this command, the sensor answers
with the Acknowledge Bit. After the delay time t

the supply voltage rises up to the programming volt-
age.

Fig. 5�1: Definition of logical 0 and 1 bit

Note: Please contact your supplier if programming

board firmware is older than version 3.50.

logical 0

DDH

DDL

logical 1

DDH

DDL

Table 5�1: Telegram parameters

Symbol

Parameter

Pin

Min.

Typ.

Max.

Unit

Remarks

DDL

Supply Voltage for Low Level
during Programming

5.6

DDH

Supply Voltage for High Level
during Programming

6.8

8.0

8.5

Rise time

0.05

Fall time

0.05

Bit time on V

1.7

1.75

1.8

is defined through the Sync Bit

pOUT

Bit time on output pin

pOUT

is defined through the

Acknowledge Bit

Voltage Change for logical 1

1, 3

% of t

or t

pOUT

DDPROG

Supply Voltage for
Programming the EEPROM

12.4

12.5

12.6

PROG

Programming Time for EEPROM

100

105

Rise time of programming voltage

0.2

0.5

Fall time of programming voltage

Delay time of programming voltage
after Acknowledge

0.5

0.7

DATA SHEET

HAL 810

Micronas

Nov. 22, 2002; 6251-536-2DS

5.3. Telegram Codes

Sync Bit

Each telegram starts with the Sync Bit. This logical "0"
pulse defines the exact timing for t

Command Bits (COM)

The Command code contains 3 bits and is a binary
number. Table 5�2 shows the available commands
and the corresponding codes for the HAL 810.

Command Parity Bit (CP)

This parity bit is "1" if the number of zeros within the 3
Command Bits is uneven. The parity bit is "0", if the
number of zeros is even.

Address Bits (ADR)

The Address code contains 4 bits and is a binary num-
ber. Table 5�3 shows the available addresses for the
HAL 810 registers.

Address Parity Bit (AP)

This parity bit is "1" if the number of zeros within the 4
Address bits is uneven. The parity bit is "0" if the num-
ber of zeros is even.

Data Bits (DAT)

The 14 Data Bits contain the register information.

The registers use different number formats for the
Data Bits. These formats are explained in Section 5.4.

In the Write command, the last bits are valid. If, for
example, the TC register (6 bits) is written, only the
last 6 bits are valid.

In the Read command, the first bits are valid. If, for
example, the TC register (6 bits) is read, only the first 6
bits are valid.

Data Parity Bit (DP)

This parity bit is "1" if the number of zeros within the
binary number is even. The parity bit is "0" if the num-
ber of zeros is uneven.

Acknowledge

After each telegram, the output answers with the
Acknowledge signal. This logical "0" pulse defines the
exact timing for t

pOUT

Note: The Micronas lock bit (LOCKI) has already been set during production and cannot be reset.

Table 5�2: Available commands

Command

Code

Explanation

READ

read a register

WRITE

write a register

PROM

program all nonvolatile registers (except the lock bits)

ERASE

erase all nonvolatile registers (except the lock bits)

LOCKI

lock Micronas lockable register

LOCK

lock the whole device and disable programming

HAL 810

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Nov. 22, 2002; 6251-536-2DS

Micronas

5.4. Number Formats

Binary number:

The most significant bit is given as first, the least sig-
nificant bit as last digit.

Example:

101001

represents 41 decimal.

Signed binary number:

The first digit represents the sign of the following
binary number (1 for negative, 0 for positive sign).

Example:

0101001

represents +41 decimal

1101001

represents

41 decimal

Two-complementary number:

The first digit of positive numbers is "0", the rest of the
number is a binary number. Negative numbers start
with "1". In order to calculate the absolute value of the
number, calculate the complement of the remaining
digits and add "1".

Example:

0101001

represents +41 decimal

1010111

represents

41 decimal

Table 5�4: Micronas registers (read only for customers)

Table 5�3: Available register addresses

Register

Code

Data
Bits

Format

Customer

Remark

MIN-DUTY

binary

read/write/program

Minimum Duty Cycle

MAX-DUTY

binary

read/write/program

Maximum Duty Cycle

DCOQ

two compl.
binary

read/write/program

Output Duty Cycle at zero
ADC-Readout

DCSENSITIVITY

signed binary

read/write/program

Increase of Output Duty
Cycle with ADC-Readout

MODE

binary

read/write/program

Range and filter settings

LOCKR

binary

lock

Lock Bit for customer
registers

ADC-READOUT

two compl.
binary

read

Output of A/D converter
(internal magnetic signal)

signed binary

read/write/program

Temperature compensa-
tion coefficient

TCSQ

binary

read/write/program

Temperature compensa-
tion coefficient

Register

Code

Data
Bits

Format

Remark

OFFSET

two compl. binary

ADC offset adjustment

FOSCAD

binary

Oscillator frequency adjustment

SPECIAL

special settings

IMLOCK

binary

Lock Bit for the Micronas registers

DATA SHEET

HAL 810

Micronas

Nov. 22, 2002; 6251-536-2DS

5.5. Register Information

MIN-DUTY

The register range is from 0 up to 1023.

� The register value is calculated with:

MAX-DUTY

� The register range is from 0 up to 2047.

� The register value is calculated with:

DCOQ

� The register range is from

1024 up to 1023.

� The register value is calculated with:

DCSENSITIVITY

� The register range is from

8192 up to 8191.

� The register value is calculated with:

TC and TCSQ

� The TC register range is from

31 up to 31.

� The TCSQ register range is from 0 up to 31.

Please refer Section 4.2. on page 17 for the recom-
mended values.

MODE

� The register range is from 0 up to 63 and contains

the settings for FILTER and RANGE:

Please refer Section 2.2. on page 7 for the available
FILTER and RANGE values.

ADC-READOUT

� This register is read only.

� The register range is from

8192 up to 8191.

5.6. Programming Information

If the content of any register (except the lock registers)
is to be changed, the desired value must first be writ-
ten into the corresponding RAM register. Before read-
ing out the RAM register again, the register value must
be permanently stored in the EEPROM.

Permanently storing a value in the EEPROM is done
by first sending an ERASE command followed by
sending a PROM command. The address within the
ERASE and PROM commands is not important.
ERASE and PROM act on all registers in parallel.

If all HAL 810 registers are to be changed, all writing
commands can be sent one after the other, followed by
sending one ERASE and PROM command at the end.

Note: For production and qualification tests, it is

strongly recommended to set the LOCK bit after
final adjustment and programming of HAL 810.
The LOCK function is active after the next
power-up of the sensor.

Min-Duty

100%

* 2048

MIN-DUTY =

Max-Duty

100%

* 2048

MAX-DUTY =

100%

* 1024

DCOQ =

DCSENSITIVITY = DCSensitivity * 2048

MODE = FILTER * 8 + RANGE

All information and data contained in this data sheet are without any
commitment, are not to be considered as an offer for conclusion of a
contract, nor shall they be construed as to create any liability. Any new
issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirmation
form; the same applies to orders based on development samples deliv-
ered. By this publication, Micronas GmbH does not assume responsibil-
ity for patent infringements or other rights of third parties which may
result from its use.
Further, Micronas GmbH reserves the right to revise this publication
and to make changes to its content, at any time, without obligation to
notify any person or entity of such revisions or changes.
No part of this publication may be reproduced, photocopied, stored on a
retrieval system, or transmitted without the express written consent of
Micronas GmbH.

HAL 810

DATA SHEET

Nov. 22, 2002; 6251-536-2DS

Micronas

Micronas GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: docservice@micronas.com
Internet: www.micronas.com

Printed in Germany
Order No. 6251-536-2DS

6. Data Sheet History

1. Data Sheet: "HAL 810 Programmable Linear Hall

Effect Sensor", Aug. 16, 2002, 6251-536-1DS. First
release of the data sheet.

2. Data Sheet: "HAL 810 Programmable Linear Hall

Effect Sensor", Nov. 22, 2002, 6251-536-2DS. Sec-
ond release of the data sheet. Major changes:

� Fig. 2�3: Diagram "Details of EEPROM and Digital

Signal Processing" changed

� Fig. 2�5: Diagram "Example for output characteris-

tics" changed

� DCOQ register programmable from

100% to 100%

in steps of 0.0976%

� Clamping function: minimum duty cycle programma-

ble between 0% and 50% in steps of 0.0488%, max-
imum duty cycle programmable between 0% and
100% in steps of 0.0488%

� Changes in Register Information.

Электронный компонент: HAL810

Document Outline