MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
8 - 10
61095
GENERAL PURPOSE PNP TRANSISTOR
(2N2907A)
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
TO-18 style package
Rugged package able to withstand high
acceleration load
Hermetically
sealed
Mil-S-19500 screening available
Applications:
Analog
switches
Digital
switches
Signal
Conditioning
Amplifiers
DESCRIPTION
The 2N2907A is a hermetically sealed metal can general purpose switching transistor.
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage ...............................................................................................................................................................60V
Collector-Emitter Voltage............................................................................................................................................................60V
Emitter-Base Voltage....................................................................................................................................................................5V
Collector Current-Continuous ............................................................................................................................................... 600mA
Operating Temperature ........................................................................................................................................ -65C to +200C
Storage Temperature............................................................................................................................................. -65C to +200C
Maximum Junction Temperature ...........................................................................................................................................200C
Power Dissipation @ T
A
= 25C
............................................................................................................................................ 0.4W 1/
Soldering Temperature (vapor phase reflow for 30 seconds) ...............................................................................................215C
Note:
1. Derate linearly @ 2.28 mw/C for T
A
> 25C.
Package Dimensions Schematic Diagram
1
2
3
[1.17]
[0.91]
0.036
0.046
0.048
[1.22]
[0.71]
0.028
45
DIMENSIONS ARE IN INCHES (MILLIMETERS)
0.170
0.500 ([12.70] MAX
0.210
[4.32]
[5.33]
0.750 [19.05] MIN
0.030 [0.76)] MAX
0.178 (4.52)
0.195 (4.95)
3 LEADS
0.021 [0.53]
0.016 [0.41]
0.209 (5.31)
0.230 (5.84)
0.100 [2.54]
COLLECTOR
BASE
EMITTER
B
E
C
3
1
2
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
8 -11
61095
GENERAL PURPOSE PNP TRANSISTOR (2N2907A)
OPTICAL/ELECTRICAL CHARACTERISTICS
T
A
= 25
C unless otherwise specified.
PARAMETER
SYMBOL
MIN
MAX
UNITS
TEST CONDITIONS
NOTE
Collector-Base Breakdown Voltage
V
(BR)CBO
60
V
I
C
= 10
A, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CBO
60
V
I
C
= 10mA, I
B
= 0
2/
Emitter-Base Breakdown Voltage
V
(BR)CBO
5.0
V
I
E
= 10
A, I
C
= 0
Collector-Base Cutoff Current
I
CBO
10
nA
V
CB
= 50V, I
E
= 0
10
A
V
CB
= 50V, I
E
= 0, T
A
= 150
C
Collector-Emitter Cutoff Current
I
CES
50
nA
V
CE
= 30V
Emitter-Base Cutoff Current
I
EBO
50
nA
V
EB
= 3.5V, I
C
= 0
Forward-Current transfer Ratio
h
fe1
75
-
V
CE
= 10V, I
C
= 0.1mA
100
450
-
V
CE
= 10V, I
C
= 1.0mA
100
-
V
CE
= 10V, I
C
= 10mA
100
300
-
V
CE
= 10V, I
C
= 150mA
1
50
-
V
CE
= 10V, I
C
= 500mA
1
50
-
V
CE
= 10V, I
C
= 1.0mA @ -55
C
Collector-Emitter Saturation Voltage
V
CE (SAT)
0.40
V
I
C
= 150mA, I
B
= 15mA
1
1.60
V
I
C
= 500 mA, I
B
= 50mA
1
Base-Emitter Saturation Voltage
V
BE (SAT)
1.30
V
I
C
= 150mA, I
B
= 15mA
1
2.60
V
I
C
= 500mA, I
B
= 50mA
1
SMALL-SIGNAL CHARACTERISTICS
Small Signal Forward Current Transfer Ratio
h
fe
100
-
V
CE
= 10V, I
C
= 1mA, f = 1kHz
Small Signal Forward Current Transfer Ratio
h
fe
2.0
-
V
CE
= 20V, I
C
= 50mA, f =100kHz
Open Circuit Output Capacitance
C
OBO
8.0
pF
V
CB
= 10V, 100kHz,
<
f
<
1 MHz
Input Capacitance (Output Open Capacitance)
C
IBO
30
pF
V
EB
= 2.0V, 100kHz,
<
f
<
1 MHz
Turn-On Time
t
on
45
ns
V
CC
= 30V, I
C
= 150mA,
I
B1
= 15mA
Turn-Off Time
t
off
300
ns
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
NOTES:
1. Pulse
width
<
300
s, duty cycle
<
2.0%.
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