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Электронный компонент: 61113-002

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MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
8 - 14
61113
GENERAL PURPOSE (NPN) TRANSISTOR
SURFACE MOUNT PACKAGE
(2N2369AUB)
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
Hermetically
sealed
Hermetically sealed 3 pin LCC
MIL-PRF-19500 screening available
Applications:
Analog
Switches
Signal
Conditioning
Small Signal Amplifiers
High
Density
Packaging
DESCRIPTION
The 61113 is a N-P-N, general-purpose switching and amplifier transistor in a 3 pin leadless chip carrier package. All
packages are hermetically sealed for high reliability and harsh environments. This device is available custom binned to
customer specifications in commercial or screened to MIL-PRF-19500 up to JANS level.
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage - V
CBO
................................................................................................................................................. 40Vdc
Collector-Emitter Voltage - V
CEO
.............................................................................................................................................. 15Vdc
Collector-Emitter Voltage - V
CES
.............................................................................................................................................. 40Vdc
Emitter-Base Voltage - V
EBO
................................................................................................................................................... 4.5Vdc
Collector Current I
C(Peak)
....................................................................................................................................................... 500mA
Continuous Collector Current ................................................................................................................................................ 200mA
Maximum Junction Temperature........................................................................................................................................... +200C
Operating Temperature (See part selection guide for actual operating temperature)............................................ -65C to +125C
Storage Temperature............................................................................................................................................... -65C to +200C
Lead Soldering Temperature (vapor phase reflow for 30 seconds) .......................................................................................215C
Package Dimensions Schematic Diagram
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
ORIENTATION KEY
3 PLACES
1
2
3
0.105 [2.67]
0.085 [2.16]
0.125 [3.18]
0.115 [2.92]
1
B
2
3
E
C
0.054[1.37]
0.046 [1.17]
0.024 [0.61]
0.016 [0.41]
0.036 [0.91]
0.024 [0.61]
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
8 - 15
61113
SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2369AUB)
ELECTRICAL CHARACTERISTICS
T
A
= 25
C unless otherwise specified.
PARAMETER
SYMBOL
MIN
MAX
UNITS
TEST CONDITIONS
NOTE
Collector-Base Breakdown Voltage
BV
CBO
40
V
dc
I
C
= 10
A, I
E
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
40
V
dc
I
C
= 10
A , I
B
= 0
A
Collector-Emitter Sustaining Voltage
BV
CES
15
V
dc
I
C
= 10
m
A , I
B
= 0
A
Emitter-Base Breakdown Voltage
BV
EBO
4.5
V
dc
I
C
= 0, I
E
= 10
A
Collector-Base Cutoff Current
I
CBO
0.4
A
V
CB
= 20V, I
E
= 0
30
A
V
CB
= 20V, I
E
= 0, T
A
= 150
C
Collector-Emitter Cutoff Current
I
CES
0.4
A
V
CE
= 20V
Forward-Current Transfer Ratio
h
fe
-
120
-
V
CE
= 1V, I
C
= 10mA
h
fe
20
-
V
CE
= 1V, I
C
= 100mA
h
fe
20
-
V
CE
= 2V, I
C
= 100mA
h
fe4
20
-
V
CE
= 1V, I
C
= 10mA @ -55C
1
h
fe6
30
-
V
CE
= 0.35V, I
C
= 10mA @ -55
C
Collector-Emitter Saturation Voltage
V
CE (SAT)
0.20
V
I
C
= 10mA, I
B
= 1mA
1
V
CE (SAT)
0.30
V
I
C
= 10mA, I
B
= 1mA @ +125
C
V
CE (SAT)
0.25
V
I
C
= 30mA, I
B
= 3mA
V
CE (SAT)
0.50
V
I
C
= 100mA, I
B
= 10mA
1
Base-Emitter Saturation Voltage
V
BE (SAT)
0.7
0.85
V
I
C
= 10mA, I
B
= 1mA
1
V
BE (SAT)
0.59
-
V
I
C
= 10mA, I
B
= 1mA @ +125
C
V
BE (SAT)
1.02
V
I
C
= 10mA, I
B
= 1mA @ -55
C
1.15
V
I
C
= 30mA, I
B
= 3mA
V
BE (SAT)
1.60
V
I
C
= 100mA, I
E
= 10mA
1
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
f
r
500
MHz
V
CB
= 10V, 100kHz,
<
f
<
1 MHz
Input Capacitance
(Output Open Capacitance)
C
IBO
25
pF
V
EB
= 0.5 V, 100kHz,
<
f
<
1 MHz
Turn-On Time
t
on
35
nS
V
CC
= 30V, I
C
= 150mA,
I
B1
= 15mA
Turn-Off Time
t
off
300
nS
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
NOTES:
1.
Pulse width
<
300
s, duty cycle
<
2.0%.
SELECTION GUIDE
PART NUMBER
PART DESCRIPTION
61113-001
2N2369AUB PNP transistor, commercial version
61113-002
2N2369AUB PNP transistor, JAN level screening
61113-003
2N2369AUB PNP transistor, JANTX level screening
61113-004
2N2369AUB PNP transistor, JANTXV level screening
61113-005
2N2369AUB PNP transistor, JANS level screening
NOTE: Also available in dual and quad configurations upon request. Can also be supplied in gull wing surface mount versions.