High Conductance
DO-35 Diodes
1N4150
Absolute Maximum Ratings
Symbol
Value
Unit
Average Forward Rectified Current at T
Ambient
= 25
o
C
I
AV
0.65
Amp
Maximum Non-Repetitive Surge (8.3 mSecs. 1/2 sine)
I
FSM
2.0
Amps
Junction Temperature Range
T
j
-65 to +200
o
C
Storage Temperature Range
T
S
-55 to +200
o
C
Max. Average Power Dissipation
Pdiss
250
mW
Characteristics at T =
25
o
C
Peak
Maximum
Maximum
Maximum Leakage
Minimum
Inverse Voltage
Average Rectified
Forward Voltage
Current
Saturation
(MIN.)
Current
Drop
(I
R
) @ PIV
Voltage
(PIV)
(I
O
)
(V
F
)
@ 0.1A
25
o
C 150
o
C
(@0.1 mA)
Type
Volts
Amps
Volts
A A
Volts
1N482B
30
0.2
1.0
0.025 5
40
1N483B
60
0.2
1.0
0.025 5
80
1N484B
125
0.2
1.0
0.025 5
150
1N485B
175
0.2
1.0
0.025 5
200
1N486B
225
0.2
1.0
0.025 5
250
Features
Humidity proof glass
Thermally matched system
No thermal fatigue
No applications restrictions
Sigma BondTM plated contacts
100% guaranteed solderability
Problem free assembly
Six Sigma quality
LL-35 MiniMELF types available
LL-35 Glass miniMELF package available, substitute an LL prefix instead of "1N"..
Use Advantages
Used as a general purpose diode in power supplies, or in clipping and steering
applications. Operation at temperatures up to 200 degrees C, no derating.
Can be used in harsh environments where hermeticity and low cost are
important. Compatible with all major automatic pick and place mounting
equipment. May be used on ceramic boards along with high temperature IR
solder reflow.
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
D O -35 G lass P ack age
D ia.
0.06-0.09"
1.0"
25.4 m m
(M in.)
Leng th
0.120-.200"
3.05-5.08-
mm
1.53-2.28 mm
0.018-0.022"
0.458-0.558 mm
Lead Dia.
1N482B
thru
1N486B
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