ELECTRICAL CHARACTERISTICS @ 25C, unless otherwise specified.
CDI
MINIMUM MAXIMUM
MAXIMUM
MAXIMUM
REVERSE
MAXIMUM
TYPE
BREAKDOWN
FORWARD
FORWARD LEAKAGE CURRENT
CAPACITANCE @
ESDS
NUMBER
VOLTAGE
VOLTAGE VOLTAGE
V
R
= 0 VOLTS
CLASS
f = 1.0 MH
Z
V
BR
@ 10
A
V
F
@ 1 mA
V
F @
I
F
1
R
@ V
R
C
T
VOLTS
VOLTS
VOLTS@mA
NA
VOLTS
PICO FARADS
1N5711UR-1
70
0.41
1.0 @ 15
200
50
2.0
1
1N5712UR-1
20
0.41
1.0@35
150
16
2.0
1
1N6857UR-1
20
0.35
0.75@ 35
150
16
4.5
2
1N6858UR-1
70
0.36
0.65 @ 15
200
50
4.5
2
CDLL2810
20
0.41
1.0 @ 35
100
15
2.0
1
CDLL5711
70
0.41
1.0 @ 15
200
50
2.0
1
CDLL5712
20
0.41
1.0 @ 35
150
16
2.0
1
CDLL6263
60
0.41
1.0 @ 15
200
50
2.2
1
CDLL6857
20
0.35
0.75 @ 35
150
16
4.5
2
CDLL6858
70
0.36
0.65 @ 15
200
50
4.5
2
NOTE:
Effective Minority Carrier Lifetime
(
) is 100 Pico Seconds
NOTICE:
Qualification testing to J, JX, JV and JS levels for 6857 and 6858 types is underway. Contact the
factory for qualification completion dates. These two part numbers are being introduced by CDI as
"drop-in" replacements for the 5711 and 5712. They provide a more robust mechanical design and
a higher ESDS class with the only trade-off being an increase in capacitance.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
145
MILLIMETERS INCHES
DIM
MIN
MAX
MIN MAX
D
1.60
1.70
0.063 0.067
F
0.41
0.55
0.016 0.022
G
3.30
3.70
.130 .146
G1
2.54 REF.
.100 REF.
S
0.03 MIN.
.001 MIN.
FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
100 C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (ZOJX): 40
C/W maximum
POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
MAXIMUM RATINGS
Operating Temperature: -65C to +150C
Storage Temperature:
-65C to +150C
Operating Current:
5711 & 6263 TYPES
:33mA dc @ TEC = +140C
2810, 5712 & 6858 Types :75mA dc @ TEC = +130C
6857 Types
:150mA dc @ TEC = +110C
Derating:
:All Types: Derate to 0 (zero) mA dc @ +150C
1N5711UR-1 AVAILABLE IN
JAN, JANTX, JANTXV and JANS
PER MIL-PRF-19500/444
1N5712UR-1 AVAILABLE IN
JAN, JANTX, JANTXV and JANS
PER MIL-PRF 19500/445
SCHOTTKY BARRIER DIODES
LEADLESS PACKAGE FOR SURFACE MOUNT
METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION
1N5711UR-1
1N5712UR-1
1N6857UR-1
1N6858UR-1
CDLL2810
CDLL5711
CDLL5712
CDLL6263
CDLL6857
CDLL6858
146
1N5711UR-1, 1N5712UR-1, 1N6857UR-1,
1N6858UR-1, CDLL5711, CDLL5712, CDLL2810,
CDLL6263, CDLL6857 and CDLL6858
0
.2
.4
.6
.8
1.0
1.2
VF FORWARD VOLTAGE (V)
Figure 1.
I-V Curve Showing Typical
Forward Voltage Variation with
Temperature for the CDLL2810
and CDLL5712 Schottky Diodes.
0
.2
.4
.6
.8
1.0
1.2
VF FORWARD VOLTAGE (V)
Figure 3.
I-V Curve Showing Typical
Forward Voltage Variation with
Temperature for Schottky Diode
CDLL5711.
0
5.0
10
15
20
25
30
VR REVERSE VOLTAGE (V)
(PULSED)
Figure 2.
CDLL2810 and CDLL5712
Typical Variation of Reverse
Current (IR) vs. Reverse Voltage
(VR) at Various Temperatures.
0
10
20
30
40
50
60
VR REVERSE VOLTAGE (V)
(PULSED)
Figure 4.
CDLL5711 Typical
Variation of Reverse Current (IR)
vs. Reverse Voltage (VR) at Various
Temperatures.
.1
1.0
10
100
IF FORWARD CURRENT (mA)
(PULSED)
Figure 5.
Typical Dynamic
Resistance (RD) vs. Forward
Current (IF).
I F
FORWARD CURRENT (mA)
I F
FORWARD CURRENT (mA)
I R
REVERSE CURRENT (nA)
I R
REVERSE CURRENT (nA)
R
D
DYNAMIC RESISTANCE (!!)
100
10
1.0
.1
.01
100,000
10,000
1000
1
10
1
50
10
5
1
.5
.1
.05
.01
1000
100
10
1
10,000
1000
100
10
1.0
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