1N6822
(MSASC150W45L)
1N6822R
(MSASC150W45LR)
45 Volts
150 Amps
Features
Tungsten/Platinum schottky barrier
Oxide passivated structure for very low leakage currents
Guard ring protection for increased reverse energy capability
Epitaxial structure minimizes forward voltage drop
Hermetically sealed, low profile ceramic surface mount power package
Low package inductance
Very low thermal resistance
Available as standard polarity (strap is anode: 1N6822) and reverse
polarity (strap is cathode: 1N6822R)
DESCRIPTION
SYMBOL
MAX.
UNIT
Peak Repetitive Reverse Voltage
V
RRM
45
Volts
Working Peak Reverse Voltage
V
RWM
45
Volts
DC Blocking Voltage
V
R
45
Volts
Average Rectified Forward Current, Tc
125
C
I
F(ave)
150
Amps
derating, forward current, Tc
125
C
dI
F
/dT
4
Amps/
C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
I
FSM
750
Amps
Peak Repetitive Reverse Surge Current, tp= 1
s, f= 1kHz
I
RRM
2
Amp
Junction Temperature Range
T
j
-55 to +150
C
Storage Temperature Range
T
stg
-55 to +150
C
Thermal Resistance, Junction to Case: 1N6822
1N6822R
JC
0.20
0.35
C/W
Maximum Ratings @ 25
C (unless otherwise specified)
Mechanical Outline
ThinKeyTM 3
Datasheet# MSC1036A
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
LOW LEAKAGE
SCHOTTKY DIODE
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