MIL-PRF-19500/116L
8 June 2001
SUPERSEDING

MIL-PRF-19500/116K
28 February 1997

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING

TYPES 1N914, 1N914UR, 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA,

1N4148UBCC, 1N4148UBCD, 1N4531, AND 1N4531UR, JAN, JANTX, JANTXV, JANHC, AND JANKC

JANS1N4148-1 (see 6.4). Device types 1N914
and 1N4531 are inactive for new design.

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three

levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product
assurance are provided for each unencapsulated device.

1.2 Physical dimensions. See figures 1 (similar to DO-35), 2, 3, 4, and 5.

1.3 Maximum ratings.

Type

(BR)

RWM

= 25

FSM

1/120 s

STG

V dc

V (pk)

A (pk)

C/W

1N914, UR

100

75 (1)

-65 to +200

-65 to +175

N/A

1N4531, UR

100

125 (2)

-65 to +200

-65 to +175

250

N/A

1N4148-1, UR-1

100

200 (3)

-65 to +200

(leaded)

N/A

1N4148UB,
1N4148UB2,
1N4148UB2R,
1N4148UBCA,
1N4148UBCC

1N4148UBCD,

100

200 (3)

-65 to +200

100(UR)

150

(1) Derate at 0.5 mA/

C above T

= 25

(2) Derate at 0.83 mA/

C above T

= 25

(3) Derate at 1.14 mA/

C above T

= 25

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

INCH POUND

The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 8 September 2001.

MIL-PRF-19500/116L

1.4 Primary electrical characteristics at T

= +25

C, unless otherwise indicated.

Type

(1)

= 20 V dc

= 75 V dc

1N914
1N4148-1
1N4531

mA dc

10
10
10

V dc

0.8
0.8
0.8

mA dc

100
100

V dc

1.2
1.2
1.2

nA dc

25
25
25

A dc

0.5
0.5
0.5

Type

(1)

= 20 V dc

= 150

= 75 V dc

= 150

= 5.0 V dc (pk) and

= 50 mA dc

1N914
1N4148-1
1N4531

A dc

35
35
35

A dc

75
75
75

20
20
20

5
5
5

(1) Electrical characteristics for surface mount devices are equivalent to the corresponding non-surface mount

devices unless otherwise noted.

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-19500

Semiconductor Devices, General Specification for.

STANDARD

DEPARTMENT OF DEFENSE

MIL-STD-750

Test Methods for Semiconductor Devices.

(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the

Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)

MIL-PRF-19500/116L

Types

Dimensions

Notes

Ltr

Inches

Millimeters

1, 2

Min

Max

Min

Max

1N4148-1

.140

.180

3.56

4.57

1N914

.056

.075

1.42

1.90

1.000

1.500

25.40

38.10

.018

.022

0.46

0.56

1N4531

.080

.120

2.03

3.05

.050

.075

1.27

1.90

1.000

1.500

25.40

38.10

.018

.022

0.46

0.56

NOTES:

1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Ferrule is optional on types 1N4148-1 and 1N4531 for dimension BL.
4. The minimum dimension of BD shall apply over at least .075 (1.90 mm) of dimension BL.
5. The specified lead diameter applies in the zone between .050 (1.27 mm) for 1N914, and 1N4148-1,

and .010 (0.25mm) for 1N4531 from the diode body to the end of the lead. Outside of this zone the lead
shall not exceed BD.

FIGURE 1. Semiconductor device, diode, types 1N914, 1N4148-1, and 1N4531.

MIL-PRF-19500/116L

1N4148UBCA

1N4148UB

1N4148UBD

1N4148UBCC

Dimensions

Symbol

Inches

Millimeters

Symbol

Inches

Millimeters

Min

Max

Min

Max

Min

Max

Min

Max

0.046

0.056

0.97

1.42

0.071

0.078

1.81

2.01

0.017

0.023

0.43

0.58

0.016

0.024

0.41

0.61

0.016

0.024

0.41

0.61

0.115

0.125

2.82

3.18

0.016

0.024

0.41

0.61

- - -

0.085

0.105

2.41

2.67

0.022

0.038

0.56

0.96

0.024

0.036

0.61

0.81

NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Ceramic package only.

FIGURE 3. Physical dimensions, surface mount (UB versions).

MIL-PRF-19500/116L

Dimensions

Symbol

Inches

Millimeters

Note

Min

Max

Min

Max

0.046

0.056

0.97

1.42

0.017

0.035

0.43

0.89

0.016

0.024

0.41

0.61

Typ

0.016

0.024

0.41

0.61

Typ

0.012

0.3

Typ

0.085

0.108

2.41

2.74

0.071

0.078

1.81

2.01

0.035

0.039

0.89

0.99

0.085

0.108

2.41

2.74

0.115

0.128

2.82

3.25

- - -

0.128

- - -

3.25

0.022

0.038

0.56

0.96

0.008R

0.2R

0.022R

0.55R

NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.

FIGURE 4. Physical dimensions, surface mount (2 pin UB version).

MIL-PRF-19500/116L

2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited

herein the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The requirements for acquiring the product described herein shall consist of this document and

MIL-PRF-19500.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows.

Forward recovery voltage. Specified maximum forward voltage used to determine forward recovery

time.

Lead spacing distance between device body and electrical/mechanical contact on lead.

Hermetic unleaded 3 terminal (LCC, Leadless Chip Carrier) package type.

Unleaded round package type designation.

3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in

MIL-PRF-19500, and on figures 1, 2, 3, 4, and 5 herein.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.4.2 Diode construction. All devices (except UB version) shall be metallurgically bonded double plug construction

in accordance with the requirements of category I, II, or III (see MIL-PRF-19500). The UB package shall be wire
bonded, eutectically mounted devices.

3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I.

3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and

4.4.3 herein.

3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking

may be omitted from the body, but shall be retained on the initial container.

3.7.1 UR devices. "UR" devices shall be marked with a cathode band only. Initial container package marking shall

be in accordance with MIL-PRF-19500.

3.7.2 UB devices. The part number may be reduced to J4148, JX4148, or JV4148. Manufacturers identification

and date code shall be marked on the devices.

3.7.3 UBR devices. The part number may be reduced to J4148, JX4148, or JV4148. Manufacturers identification

and date code shall be marked on the devices.

3.8 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. No color

coding will be permitted. UB packages do not require polarity marking.

3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

MIL-PRF-19500/116L

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 Group E inspection. Group E inspection shall be in accordance with MIL-PRF-19500 and table II herein.

4.3 Screening (JAN, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of

MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see table IV

Measurement

of MIL-PRF-19500)

JAN level

JANTX and JANTXV levels

Temperature cycling in accordance
with MIL-PRF-19500 TX level.

Temperature cycling

3c (1)

Thermal impedance (see 4.5.5)

Not applicable

10 (2)

Not applicable

Method 1038, condition A, t = 48 hours

Not applicable

and V

Not applicable

See 4.3.1, t = 48 hours

Not applicable

(3) Subgroup 2 of table I herein;

IR1 = 100 percent of initial reading or 15 nA,

whichever is greater;

VF1 = 25 mV dc.

PDA = 10 percent

(1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in

accordance with MIL-PRF-19500, screen 3 prior to this thermal test.

(2) Test within 24 hours after removal from test.
(3) When thermal impedance is performed prior to screen 13, it is not required to be repeated in screen 13.

4.3.1 Burn-in test conditions. Burn-in conditions are as follows:

Type

+30

RWM

= 75 V (pk)

f = 50 - 60 Hz

= +30

1N914, 1N914UR

= 75 mA

=150 mA min

1N4531, 1N4531UR

= 125 mA

= 175 mA min

1N4148-1, 1N4148UR-1, 1N4148UB,

1N4148UB2, 1N4148UBR2

= 200 mA

= 200 mA min

MIL-PRF-19500/116L

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I

herein. Electrical measurements (end-points) shall be in accordance with Table I, group A, subgroup 2 herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table VIb (JANTX and JANTXV) of MIL-PRF-19500 and as specified herein. Electrical
measurements (end-points) shall be in accordance with Table I, group A, subgroup 2 herein except for the thermal
impedance test.

4.4.2.1 Group B inspection, table VIb (JANTX, JANTXV) of MIL-PRF-19500.

Subgroup

Method

Conditions

2005

= 100 mA, axial tensile stress = 8 lbs, T

= +150

C; (not applicable to UR or UB

package). (This test shall be performed as the first test of subgroup 2).

1027

= +30

C, V

RWM

= 75 V(pk), f = 50-60 Hz (see 4.5.1); 1N914: I

= 5 mA,

1N4531: I

= 125 mA, 1N4148-1: I

= 200 mA.

2075

See 4.5.4 herein.

3101

= 250

C/W, .375 inch (9.52 mm) lead length (non-surface mount).

or 4081

100

C/W (UR), R

= 150

C/W (UB).

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in
accordance with Table I, group A, subgroup 2 herein except for the thermal impedance test.

Subgroup

Method

Conditions

1056

100 cycles.

2036

Tension: Test condition A, t = 15 seconds, weight = 10 pounds. Lead fatigue:
Test condition E. Terminal strength and lead fatigue not applicable to
UB or UR devices.

1026

= +30

C, V

RWM

= 75 V(pk), f = 50-60 Hz (see 4.5.1), for:

1N914

= 75 mA.

1N4531

= 125 mA.

1N4148-1

= 200 mA.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurements shall be specified in section 4 of MIL-STD-750.

4.5.2 Life tests. AC tests shall be conducted with a half-sine wave of the peak voltage specified herein impressed

across the diode in the reverse direction, followed by a half-sine waveform of the average rectified current specified
herein. The forward conduction angle of the rectified current shall be not greater than 180 degree nor less than
150 degree.

MIL-PRF-19500/116L

4.5.3 Forward recovery voltage and time. Forward recovery time shall be measured as the time interval between
zero time and the point where the pulse has decreased to 110 percent of the steady-state value of V

when

= 50 mA dc. The maximum rise time of the response detector shall be 1 ns.

4.5.4 Decap internal visual scribe and break (not applicable to UB package). Scratch glass at cavity area with

diamond scribe. Carefully snap open. Using 30X magnification examine the area where die was in contact with the
plugs, verify footprint for minimum of 15 percent metallurgical bonding area. In addition, a cross sectional view may
be used to verify consistency of construction. A cross sectional view shall be used exclusively for construction
verification and shall not be used to verify bond integrity. The UB package shall employ the manufacturers' normal
delidding procedures.

4.5.5 Thermal impedance (Z

measurements). Thermal impedance measurements shall be in accordance

method 3101 MIL-STD-750, and as follows.

= 300 mA to 500 mA.

= 10 ms.

= 1 mA to 10 mA.

= 70

s maximum.

The maximum limit for Z

under these test conditions is Z

= 70

C/W.

4.5.5.1 For initial qualification or requalification. Read and record data (Z

) shall be supplied to the qualifying

activity on one lot (random sample of 500 devices minimum) prior to shipment. Twenty two samples shall be
serialized and provided to the qualifying activity for test correlation.

4.5.6 Thermal resistance. Thermal resistance measurement shall be in accordance with method 3101

MIL-STD-750, or method 4081 of MIL-STD-750. Forced moving air or draft shall not be permitted across the device
during test. The maximum limit for R

under these test conditions shall be as shown in group B of 4.4.2.1 and

group E of table II. The following conditions shall apply when using method 3101:

- - - - - - - - - - - - - - - - - - - - - - - - - - - 75 mA to 300 mA.

- - - - - - - - - - - - - - - - - - - - - - - - - - - 25 seconds minimum.

- - - - - - - - - - - - - - - - - - - - - - - - - - - 1 mA to 10 mA.

- - - - - - - - - - - - - - - - - - - - - - - - - - 70

s maximum.

MIL-PRF-19500/116L

TABLE I. Group A inspection.

MIL-STD-750

Limits

Inspection 1/

Method

Conditions

Symbol

Min

Max

Unit

Subgroup 1

Visual and mechanical
inspection

2071

Subgroup 2

Thermal impedance

3101

See 4.5.5

C/W

Forward voltage

4011

= 10 mA dc

0.8

V dc

Breakdown voltage

4021

= 100

A dc

BR1

100

V dc

Reverse current

1N914
1N4531
1N4148-1

4016

DC method

= 20 V dc

25
25
25

nA dc
nA dc
nA dc

Reverse current

4016

DC method

= 75 V dc

500

nA dc

Forward voltage

4011

= 50 mA dc

= 100 mA dc

1.2
1.2
1.2

V dc
V dc
V dc

Subgroup 3

High temperature
operation:

= +150

Reverse current

1N914
1N4531
1N4148-1

4016

DC method

= 20 V dc

A dc

Reverse current

1N914
1N4531
1N4148-1

4016

DC method

= 75 V dc

75
75
75

A dc

Forward voltage

1N914
1N4531
1N4148-1

4011

= 10 mA dc

0.8
0.8
0.8

V dc
V dc
V dc

See footnote at end of table.

MIL-PRF-19500/116L

TABLE I. Group A inspection - Continued.

MIL-STD-750

Limits

Inspection 1/

Method

Conditions

Symbol

Min

Max

Unit

Subgroup 3 -

Continued

Low temperature
operation:

= -55

Forward voltage

4011

1N914
1N4531
1N4148-1

= 50 mA dc

= 100 mA dc

1.3
1.3
1.3

V dc
V dc
V dc

Subgroup 4

Junction capacitance

4001

= 0 V dc, f = 1 MHz,

sig

= 50 mV

p-p

maximum

1N914
1N4531
1N4148-1

4.0
4.0
4.0

pF
pF
pF

Junction capacitance

4001

= 1.5 V dc, f = 1 MHz,

sig

= 50 mV

p-p

maximum

2.8

Reverse recovery time

4031

Condition A
C > 1 nF, I

= I

= 10 mA dc, R

= 100

R(REC)

= 1.0 mA dc, R

1000

1N914
1N4531
1N4148-1

Subgroup 5

Not applicable

See footnote at end of table.

MIL-PRF-19500/116L

TABLE I. Group A inspection - Continued.

MIL-STD-750

Limits

Inspection 1/

Method

Conditions

Symbol

Min

Max

Unit

Subgroup 6

Surge current

4066

Condition A (sine wave)
i

f(surge)

= 1 A (pk) for 1N914 and 1N4531

f(surge)

= 2 A (pk) for 1N4148-1, UR and

1N4148UB, I

= maximum rated

dc current = 0

= 0

10 surges, 8.3 ms width each,

one surge per minute, T

= +25

or
Condition B (square wave)

F(surge)

= 0.704 A (pk) for

1N914, 1N4531, and 1N4148UB

F(surge)

= 1.41 A (pk) for

1N4148-1

= 8.3 ms

n = 10
d.f. = 0.0055%

= 25

Electrical measurements

See table I, subgroup 2

Subgroup 7

Forward recovery
voltage and time

4026

= 50 mA dc

(see 4.5.2)

5.0

V (pk)

1/ For sampling plan, see MIL-PRF-19500.

MIL-PRF-19500/116L

TABLE II. Group E inspection (all quality levels) for qualification only.

MIL-STD-750

Inspection 1/

Method

Conditions

Sampling plan

Subgroup 1

45 devices c = 0

Thermal shock
glass strain)

1056

1,000 cycles

Electrical measurements

See table I, subgroup 2

Subgroup 2

45 devices c = 0

Intermittent
operating life

Electrical measurements

1037

10,000 cycles

See table I, subgroup 2

Subgroup 3

Not applicable

Subgroup 4

22 devices c = 0

Thermal resistance
surface mount

3101

4081

JEC

= 100

C/W (maximum) at zero lead length

(for UR),
R

JEC

= 150

C/W (maximum) for UB.

(see 4.5.6), +25

+35

Thermal resistance
leaded devices

3101

4081

JEC

= 250

C/W (maximum)

+25

+35

C, (see 4.5.6)

25s in still air.

Subgroup 5

22 devices c = 0

Monitored mission
temperature cycling

1055

Not required for UB suffix devices.

Electrical measurements

See table I, subgroup 2

MIL-PRF-19500/116L

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order

(see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact
the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are
maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency, or
within the Military Department's System Command. Packaging data retrieval is available from the managing Military
Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible
packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)

6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.

6.2 Acquisition requirements. Acquisition documents must specify the following:

Title, number, and date of this specification.

Issue of DoDISS to be cited in the solicitation and, if required, the specific issue of individual documents
referenced (see 2.2.1).

Packaging requirements (see 5.1).

Lead finish (see 3.4.1).

Type designation and product assurance level.

6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,

at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such
products have actually been so listed by that date. The attention of the contractors is called to these requirements,
and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government
tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered
by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center,
Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000.

6.4 Cross reference substitution information. The JANS version of 1N6638, 1N6642, or 1N6643
(MIL-S-19500/578) is preferred in lieu of the JANS1N4148-1. The JANS 1N6638 or 1N6642 is substitutable for the

JANS 1N4148-1 and shall be used in lieu of the JANS1N4148-1. A PIN for PIN replacement table follows, and these
devices are directly interchangeable.

JANS

Non-preferred

JANS

superseded

1N4148-1

1N6638
1N6642

MIL-PRF-19500/116L

6.5 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example JANHCA1N4148) will be identified on the QPL.

JANC ordering information

Manufacturer

55801

1N4148-1
1N4148-1

JANHCA1N4148
JANKCA1N4148

6.6 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect

to the previous issue due to the extent of the changes.

Custodians:

Preparing activity

Army - CR

DLA - CC

Navy - NW
Air Force - 11
DLA - CC

(Project 5961-2422)

Review activities:
Army - AR, MI, SM
Navy - AS, CG, MC
Air Force - 19, 99

STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL

INSTRUCTIONS

1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.

2. The submitter of this form must complete blocks 4, 5, 6, and 7.

3. The preparing activity must provide a reply within 30 days from receipt of the form.

NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.

I RECOMMEND A CHANGE:

1. DOCUMENT NUMBER
MIL-PRF-19500/116K

2. DOCUMENT DATE
13 July 2001

3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N914, 1N914UR, 1N4148-1,
1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UBR2, 1N4531, AND 1N4531UR, JAN, JANTX, JANTXV, JANHC, AND JANKC

4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)

5. REASON FOR RECOMMENDATION

6. SUBMITTER

a. NAME (Last, First, Middle initial)

b. ORGANIZATION

c. ADDRESS (Include Zip Code)

d. TELEPHONE (Include Area Code)

COMMERCIAL
DSN
FAX
EMAIL

7. DATE SUBMITTED

8. PREPARING ACTIVITY

a. Point of Contact
Alan Barone

b. TELEPHONE
Commercial DSN FAX EMAIL
614-692-0510 850-0510 614-692-6939

alan.barone@dscc.dla.mil

c. ADDRESS
Defense Supply Center, Columbus
ATTN: DSCC-VAC
P.O. Box 3990
Columbus, OH 43216-5000

IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533
Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-6888

DD Form 1426, Feb 1999 (EG)

Previous editions are obsolete

WHS/DIOR, Feb 99

Электронный компонент: 1N914-1