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Электронный компонент: 2N1131L

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TECHNICAL DATA
LOW POWER PNP SILICON TRANSISTOR
Qualified per MIL-PRF-19500/177
Devices
Qualified Level
2N1131
2N1131L
2N1132
2N1132L



JAN
JANTX
MAXIMUM RATINGS
Ratings
Symbol
All Units
Units
Collector-Emitter Voltage
V
CEO
40
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage
V
EBO
5.0
Vdc
Collector Current
I
C
600
mAdc
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
0.6
2.0
W
W
Operating & Storage Temperature Range
T
op,
T
j
-65 to +200
C
1) Derate linearly 3.4 mW/
0
C for T
A
+25
0
C
2)
Derate linearly 11.4 mW/
0
C for T
C
+25
0
C
TO-39*
2N1131, 2N1132
TO-5*
2N1311L, 2N1312L
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
V
(BR)CEO
40
Vdc
Collector-Base Breakdown Voltage
I
C
= 10
Adc
V
(BR)CBO
50
Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
I
EBO
100
Adc
Collector-Emitter Cutoff Current
V
CE
= 50 Vdc, R
BE
10 ohms
I
CER

10
mAdc
Collector-Base Cutoff Current
V
CB
= 50 Vdc
V
CB
= 30 Vdc
I
CBO
10
1.0
Adc

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

2N1131, 2N1132 JAN, JANTX
ELECTRICAL CHARACTERISTICS (con't)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward Current Transfer Ratio
I
C
= 150 mAdc, V
CE
= 10 Vdc 2N1131, L
2N1132, L
I
C
= 5.0 mAdc, V
CE
= 10 Vdc 2N1131, L
2N1132, L
h
FE
20
30
15
25
45
90
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
V
CE(sat)
1.3
Vdc
Base-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
V
BE(sat)

1.5
Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short Circuit Forward-Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1 kHz 2N1131, L
2N1132, L
I
C
= 5.0 mAdc, V
CE
= 10 Vdc, f = 1 kHz 2N1131, L
2N1132, L
h
fe
15
30
20
30
50
90
Small-Signal Open-Circuit Output Admittance
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc
I
C
= 5.0 mAdc, V
CE
= 10 Vdc
h
ob
1.0
5.0
mho
Small-Signal Short-Circuit Input Impedance
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc
I
C
= 5.0 mAdc, V
CE
= 10 Vdc
h
ib
25
35
10
Magnitude of Common Emitter Small-Signal Short Circuit
Forward-Current Transfer Ratio
I
C
= 50 mAdc, V
CE
= 10 Vdc, f = 20 MHz 2N1131, L
2N1132, L
h
fe
2.5
3.0
20
20
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
C
obo
45
pF
Input Capacitance
V
EB
= 0.5 Vdc, I
C
= 0, 100 kHz
f
1.0 MHz
C
ibo
80
pF
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See figure 2 of MIL-PRF-19500/177)
t
on +
t
off
50
s
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2