TECHNICAL DATA
NPN SILICON HIGH POWER TRANSISTOR
Qualified per MIL-PRF-19500/262
Devices
Qualified Level
2N1722
2N1724
JAN
JANTX
MAXIMUM RATINGS
Ratings
Symbol
Value
Units
Collector-Emitter Voltage
V
CEO
80
Vdc
Collector-Base Voltage
V
CBO
175
Vdc
Emitter-Base Voltage
V
EBO
10
Vdc
Collector Current
I
C
5.0
Adc
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +100
0
C
(2)
P
T
3.0
50
W
W
Temperature Range: Operating
Storage Junction
T
OP,
T
stg
175
-65 to +200
0
C
1) Derate linearly 20 mW/
0
C for T
A
between +25
0
C and +175
0
C
2) Derate linearly 666 mW/
0
C for T
C
between +100
0
C and +175
0
C
TO-61*
2N1724
TO-53*
2N1722
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
V
(BR)CEO
80
Vdc
Emitter-Base Breakdown Voltage
I
E
= 10 mAdc
V
(BR)EBO
10
Vdc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc
I
CES
300
Adc
Collector-Base Cutoff Current
V
CB
= 175 Vdc
I
CBO
5.0
mAdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
I
EBO
400
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N1722, 2N1724 JAN SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
C
= 2.0 Adc, V
CE
= 15 Vdc
I
C
= 5.0 Adc, V
CE
= 15 Vdc
I
C
= 100 mAdc, V
CE
= 15 Vdc
h
FE
30
15
30
120
Collector-Emitter Saturation Voltage
I
C
= 2.0 Adc, I
B
= 200 mAdc
V
CE(sat)
0.6
Vdc
Base-Emitter Saturation Voltage
I
C
= 2.0 Adc, I
B
= 200 mVdc
V
BE(sat)
1.2
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 500 mAdc, V
CE
= 15 Vdc; f = 10 MHz
h
fe
1.0
5.0
Output Capacitance
V
CB
= 15 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
C
obo
550
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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