TECHNICAL DATA
UNITIZED DUAL NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/270
Devices
Qualified Level
2N2060
2N2060L
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N2060
Unit
Collector-Emitter Voltage
V
CEO
60
Vdc
Collector-Base Voltage
V
CBO
100
Vdc
Emitter-Base Voltage
V
EBO
7.0
Vdc
Collector Current
I
C
500
mAdc
One
Section
Both
Sections
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
540
1.5
600
2.12
mW
W
Operating & Storage Junction Temperature Range
T
J,
T
stg
-65 to +200
0
C
1) Derate linearly 3.08 mW/
0
C for T
A
> 25
0
C for one section, 3.48 mW/
0
C for both sections
2) Derate linearly 8.6 mW/
0
C for T
C
> 25
0
C for one section, 12.1 mW/
0
C for both sections
TO-78*
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= +25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(3)
R
BE
10
, I
C
= 10 mAdc
V
(BR)CER
80
Vdc
Collector-Emitter Breakdown Voltage
I
C
= 30 mAdc
V
(BR)CEO
60
Vdc
Collector-Base Cutoff Current
V
CB
= 100 Vdc
V
CB
= 80 Vdc
I
CBO
10
2.0
Adc
Adc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
V
EB
= 5.0 Vdc
I
EBO
10
2.0
Adc
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N2060, 2N2060L JAN SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 10
Adc, V
CE
= 5.0 Vdc
I
C
= 100
Adc, V
CE
= 5.0 Vdc
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc
I
C
= 10 mAdc, V
CE
= 5.0 Vdc
h
FE
25
30
40
50
75
90
120
150
Collector-Emitter Saturation Voltage
I
C
= 50 mAdc, I
B
= 5.0 mAdc
V
CE(sat)
0.3
Vdc
Base-Emitter Saturation Voltage
I
C
= 50 mAdc, I
B
= 5.0 mAdc
V
BE(sat)
0.9
Vdc
DYNAMIC CHARACTERISTICS
Common Emitter Small-Signal Short-Circuit
Forward-Current Transfer ratio
I
C
= 50 mAdc, V
CE
= 10 Vdc, f = 20 MHz
h
fe
3
25
Small-Signal Short-Circuit Input Impedance
I
C
= 1.0 mAdc, V
CB
= 5.0 Vdc, f = 1.0 kHz
h
ib
20
30
Small-Signal Short-Circuit Forward-Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz
h
fe
50
150
Small-Signal Short-Circuit Input Impedance
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz
h
ie
1,000
4,000
Small-Signal Open-Circuit Output Admittance
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz
h
oe
0
16
mhos
Input Capacitance
V
EB
= 0.5 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
C
ibo
85
pF
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
C
obo
15
pF
(3)Pulse Test: Pulse Width 250 to 350
s, Duty Cycle
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
PDF 
ZIP