TECHNICAL DATA
SILICON CONTROLLED RECTIFIER
Qualified per MIL-PRF-19500/276
Devices
Qualified
Level
2N2323
2N2323S
2N2323A
2N2323AS
2N2324
2N2324S
2N2324A
2N2324AS
2N2326
2N2326S
2N2326A
2N2326AS
2N2328
2N2328S
2N2328A
2N2328AS
2N2329
2N2329S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Sym
2N2323,S/
2N2323A,S
2N2324,S/
2N2324A,S
2N2326,S/
2N2326A,S
2N2328,S/
2N2328A,S
2N2329,S Unit
Reverse Voltage
V
RM
50
100
200
300
400
Vdc
Working Peak Reverse Voltage V
RM
75
150
300
400
500
Vpk
Forward Blocking Voltage
V
FBXM
50
(3/4)
100
(3/4)
200
(3/4)
300
(3/4)
400
(3)
Vpk
Average Forward Current
(1)
I
O
0.22
Adc
Forward Current Surge Peak
(2)
I
FSM
15
Adc
Cathode-Gate Current
V
KGM
6
Vpk
Operating Temperature
T
op
-65 to +125
0
C
Storage Junction Temp
T
stg
-65 to +150
0
C
1) This average forward current is for an ambient temperature of 80
0
C and 180 electrical degrees of
conduction.
2) Surge current is non-recurrent. The rate of rise of peak surge current shall not exceed 40 A during
the first 5
s after switching from the `off' (blocking) to the `on' (conducting) state. This is measured
from the point where the thyristor voltage has decayed to 90% of its initial blocking value.
3) Gate connected to cathode through 1,000 ohm resistor.
4) Gate connected to cathode through 2,000 ohm resistor.
TO-5
*See appendix A
for package outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
SUBGROUP 2 TESTING
Reverse Blocking Current
R
2
= 1 k
2N2323 thru 2N2329
2N2323S thru 2N2329S
R
2
= 2 k
2N2323A thru 2N2328A
2N2323AS thru 2N2328AS
V
R
= 50 Vdc 2N2323, S, A, AS
V
R
= 100 Vdc 2N2324, S, A, AS
V
R
= 200 Vdc 2N2326, S, A, AS
V
R
= 300 Vdc 2N2328, S, A, AS
V
R
= 400 Vdc 2N2329, S,
I
RBX1
10
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N2323, A, AS, S; 2N2324, A, AS, S; 2N2326, A, AS, S; 2N2328, A, AS, S; 2N232, S JAN SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics
Symbol
Min.
Max.
Unit
Forward Blocking Current
R
2
= 1 k
2N2323 thru 2N2329
2N2323S thru 2N2329S
R
2
= 2 k
2N2323A thru 2N2328A
2N2323AS thru 2N2328AS
V
R
= 50 Vdc 2N2323, S, A, AS
V
R
= 100 Vdc 2N2324, S, A, AS
V
R
= 200 Vdc 2N2326, S, A, AS
V
R
= 300 Vdc 2N2328, S, A, AS
V
R
= 400 Vdc 2N2329, S
I
FBX1
10
Adc
Reverse Gate Current
V
KG
= 6 Vdc
I
KG
200
Adc
Gate Trigger Voltage and Current
V
2
= V
FBX
= 6 Vdc; R
L
= 100
R
e
= 1 k
2N2323 thru 2N2329 and
2N2323S thru 2N2329S
R
e
= 2 k
2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
V
GT1
I
GT1
V
GT1
I
GT1
0.35
0.35
0.80
200
0.60
20
Vdc
Adc
Vdc
Adc
SUBGROUP 4 TESTING
Exponential Rate of Voltage Rise T
A
= 125
0
C
50
R
L
400
, C = 0.1 to 1.0
F, repetition rate = 60 pps,
test duration = 15 seconds
dv/dt = 1.8 v/
s, R
3
= 1 k
2N2323 thru 2N2329 and
2N2323S thru 2N2329S
dv/dt = 0.7 v/
s, R
3
= 2 k
2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
V
AA
= 50 Vdc 2N2323, S, A, AS
V
AA
= 100 Vdc 2N2324, S, A, AS
V
AA
= 200 Vdc 2N2326, S, A, AS
V
AA
= 300 Vdc 2N2328, S, A, AS
V
AA
= 400 Vdc 2N2329, S
V
FBX
47
95
190
285
380
Vdc
Forward "on" Voltage
i
FM
= 4a (pk) (pulse), pulse width = 8.5 ms, max; duty cycle = 2% max
V
FM
2.2
V(pk)
Holding Current
V
AA
= 24 Vdc max, I
F1
= 100 mAdc, I
F2
= 10 mAdc
Gate trigger source voltage = 6 Vdc,
trigger pulse width = 25
s min., R
2
= 330
R
3
= 1 k
2N2323 thru 2N2329 and
2N2323S thru 2N2329S
R
3
= 2 k
2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
I
HOX
2.0
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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