MSC0983A.DOC 12-02-98
2N3421
SYMBOL
V
CBO
*
Collector-Base Voltage
125
Volts
V
CEO
*
Collector-Emitter Voltage
80
Volts
V
EBO
*
Emitter-Base Voltage
8
Volts
I
C
*
D.C. Collector Current
3
Amps
I
C
*
Peak Collector Current
5
Amps
T
STG
*
Storage Temperature
-65 to 200
C
T
J
*
Operating Junction Temperature
-65 to 200
C
P
T
*
Power Dissipation
T
C
= 25
C Ambient
T
C
= 100
C Case
1.0
15
Watts
Watts
3 Amp, 125V,
NPN Silicon Power
Transistors
JAN, JTX, JTXV, JANS
FEATURES:
Meets MIL-S-19500/393
Collector-Base Voltage: up to 125
Peak Collector Current: 5A
High Power Dissipation in TO-5: 15W @ T
C
= 100
C
Fast Switching
TO-5
APPLICATIONS:
Power Supply
Pulse Amplifier
High Frequency Power Switching
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200
C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
*
Indicates MIL-S-19500/393
MSC0983A.DOC 12-02-98
2N3421
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS::
(25
Case Temperature Unless Otherwise Noted)
VALUE
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Min.
Max.
Units
BV
CEO
*
Collector-Emitter
Breakdown Voltage
I
C
= 50 mAdc, Cond. D (Note 1)
80
----
Vdc
I
CEX
*
Collector-Emitter
Cutoff Current
V
EB
= 0.5 Vdc, Cond. A, V
CE
= 120 Vdc
V
EB
= 0.5 Vdc, Cond. A, T
A
= 150
C, V
CE
= 120
Vdc
----
----
0.3
50
Adc
Adc
I
CEO*
Collector-Emitter
Cutoff Current
V
CE
= 60 Vdc, Cond. D
----
5.0
Adc
I
EBO
*
Emitter-Base
Cutoff Current
V
EB
= 6 Vdc, Cond. D
V
EB
= 8 Vdc, Cond. D
----
----
0.5
10
Adc
Adc
hFE*
D.C. Current Gain
(Note 1)
I
C
= 100 mAdc, V
CE
= 2 Vdc
I
C
= 1 Adc, V
CE
= 2 Vdc
I
C
= 2 Adc, V
CE
= 2 Vdc
I
C
= 5 Adc, V
CE
= 5 Vdc
I
C
= 1 Adc, V
CE
= 2 Vdc, T
A
= - 55
C
40
40
30
15
10
----
120
----
----
----
----
----
----
----
----
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
(Note 1)
I
C
= 1 Adc, I
B
= 0.1 Adc
I
C
= 2 Adc, I
B
= 0.2 Adc
----
----
0.25
0.5
Vdc
Vdc
V
BE(sat)*
Base-Emitter Saturation
Voltage (Note 1)
I
C
= 1 Adc, I
B
= 0.1 Adc
I
C
= 2 Adc, I
B
= 0.2 Adc
0.6
0.7
1.2
1.4
Vdc
Vdc
I
S/b*
Forward Biased Second
Breakdown
V
CE
= 5 Vdc, T
C
=
100
C
V
CE
= 37 Vdc, T
C
=
100
C
V
CE
= 80 Vdc, T
C
=
100
C
3
0.4
120
----
----
----
Adc
Adc
mAdc
E
S/b*
Unclamped Reverse
Biased Second
Breakdown
I
C
= 3 Adc, L = 10 mH, Base Open
45
----
mj
E
S/b*
Clamped Reverse Biased
Second Breakdown
I
C
= 3 Adc, L = 40 mH, V
Clamp
=
125V
180
----
mj
f
T
*
Gain Bandwidth Product
I
C
= 0.1 Adc, V
CE
= 10 Vdc, f = 20 MHz
26
160
MHz
C
Ob
*
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, f = 1 MHz
----
150
pf
t
on
Turn-on Time
I
C
= 1 Adc, I
B1
= - I
B2
= 0.1 Adc
----
0.3
s
t
off
Turn-off Time
I
C
= 1 Adc, I
B1
= - I
B2
= 0.1 Adc
----
1.2
s
Note 1: Pulse Test: Pulse width = 300
Sec., duty cycle
2%.
* Indicates MIL-S-19500/393
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