ChipFind - документация

Электронный компонент: 2N3439L

Скачать:  PDF   ZIP
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/368
Devices
Qualified Level
2N3439
2N3439L
2N3440
2N3440L



JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N3439 2N3440 Units
Collector-Emitter Voltage
V
CEO
350
250
Vdc
Collector-Base Voltage
V
CBO
450
300
Vdc
Emitter-Base Voltage
V
EBO
7.0
Vdc
Collector Current
I
C
1.0
Adc
Total Power Dissipation @T
A
= 25
0
C
(1)
@T
C
= 25
0
C
(2)
P
T
0.8
5.0
W
W/
0
C
Operating & Storage Temperature Range
T
op,
T
stg
-55 to +200
0
C
1) Derate linearly 4.57 mW/
0
C for T
A
> +25
0
C
2)
Derate linearly 28.5 mW/
0
C for T
C
> +25
0
C
TO- 5*
2N3439L, 2N3440L
TO-39* (TO205-AD)
2N3439, 2N3440
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 50 mAdc 2N3439
2N3440
V
(BR)CEO
350
250
Vdc
Collector-Emitter Cutoff Current
V
CE
= 300 Vdc 2N3439
V
CE
= 200 Vdc 2N3440
I
CEO

2.0
2.0
Adc
Adc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
I
EBO
10
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2



2N3439, L, 2N3440, L, JAN SERIES

ELECTRICAL CHARACTERISTICS (con't)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS (con't)
Collector-Emitter Cutoff Current
V
CE
= 450 Vdc, V
BE
= -1.5 Vdc 2N3439
V
CE
= 300 Vdc, V
BE
= -1.5 Vdc 2N3440
I
CEX

5.0
5.0
Adc
Adc
Collector-Base Cutoff Current
V
CB
= 360 Vdc 2N3439
V
CB
= 250 Vdc 2N3440
V
CB
= 450 Vdc 2N3439
V
CB
= 300 Vdc 2N3440
I
CBO
2.0
2.0
5.0
5.0
Adc
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 20 mAdc, V
CE
= 10 Vdc
I
C
= 2.0 mAdc, V
CE
= 10 Vdc
I
C
= 0.2 mAdc, V
CE
= 10 Vdc
h
FE
40
30
10
160
Collector-Emitter Saturation Voltage
I
C
= 50 mAdc, I
B
= 4.0 mAdc
V
CE(sat)
0.5
Vdc
Base-Emitter Saturation Voltage
I
C
= 50 mAdc, I
B
= 4.0 mAdc
V
BE(sat)
1.3
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 5.0 MHz
h
fe
3.0
15
Forward Current Transfer Ratio
I
C
= 5.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz
h
fe
25
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
C
obo
10
pF
Input Capacitance
V
EB
= 5.0 Vdc, I
C
= 0, 100 kHz
f
1.0 MHz
C
ibo
75
pF
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 200 Vdc; I
C
= 20 mAdc, I
B1
=
2.0 mAdc
t
on
1.0
s
Turn-Off Time
V
CC
= 200 Vdc; I
C
= 20 mAdc, I
B1
= -
I
B2
=
2.0 mAdc
t
off
10
s
SAFE OPERATING AREA
DC Tests
T
C
= 25
0
C, 1 cycle, t = 1.0 s
Test 1
V
CE
= 5.0 Vdc, I
C
= 1.0 Adc Both Types
Test 2
V
CE
= 350 Vdc, I
C
= 14 mAdc 2N3439
Test 3
V
CE
= 250 Vdc, I
C
= 20 mAdc 2N3440
(3) Pulse Test: Pulse Width = 300
s, Duty Cycle
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2

This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.