MSC1026.PDF 02-24-99
2N3719
ABSOLUTE MAXIMUM RATINGS:
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
CHARACTERISTIC
VALUE
UNITS
V
CEO
*
Collector-Emitter Voltage
40
Vdc
V
CB
*
Collector-Base Voltage
40
Vdc
V
EB
*
Emitter-Base Voltage
4.0
Vdc
I
C
*
Peak Collector Current
10
Adc
I
C
*
Continuous Collector Current
3.0
Adc
I
B
*
Base Current
0.5
Adc
T
STG
*
Storage Temperature
-65 to 200
C
T
J
*
Operating Junction Temperature
-65 to 200
C
P
D
*
Total Device Dissipation
T
C
= 25
C
Derate above 25
C
6.0
34.3
Watts
mW/
C
P
D
*
JC
Total Device Dissipation
T
A
= 25
C
Derate above 25
C
Thermal Resistance
Junction to Case
Junction to Ambient
1.0
5.71
29
175
Watts
mW/
C
C/W
C/W
Silicon PNP
Power Transistors
FEATURES:
Collector-Emitter Sustaining Voltage:
V
CEO(SUS)
= 40 Vdc (Min) - 2N3719
DC Current Gain:
h
FE
= 25-180 @ I
C
= 1.0 Adc
Low Collector-Emitter Saturation Voltage:
V
CE(sat)
= 0.75 Vdc @ I
C
= 1.0 Adc
High Current-Gain - Bandwidth Product:
f
T
= 90 MHz (Typ)
TO-5
APPLICATIONS:
High-Speed Switching
Medium-Current Switching
High-Frequency Amplifiers
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE DIFFUSED
PLANAR process. This technology produces high voltage devices with
excellent switching speeds, frequency response, gain linearity, saturation
voltages, high current gain, and safe operating areas. They are intended for
use in Commercial, Industrial, and Military power switching, amplifier, and
regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are utilized
to further increase the SOA capability and inherent reliability of these
devices. The temperature range to 200
C permits reliable operation in high
ambients, and the hermetically sealed package insures maximum reliability
and long life.
*
Indicates JEDEC registered Data.
MSC1026.PDF 02-24-99
2N3719
ELECTRICAL CHARACTERISTICS:
ELECTRICAL CHARACTERISTICS:
(25
Case Temperature Unless Otherwise Noted)
VALUE
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Min.
Max.
Units
V
CEO(sus)*
Collector-Emitter
Sustaining Voltage
I
C
= 20 mAdc, I
B
= 0
(Note 1)
40
----
Vdc
I
CEX
*
Collector Cutoff Current
V
CE
= 40 Vdc, V
BE
(off)
= 2.0 Vdc
V
CE
= 40 Vdc,
V
BE
(off)
= 2.0
Vdc, T
C
= 150
C
----
----
10
1.0
Adc
m
Adc
I
CBO*
Collector Cutoff Current
V
CB
= 40 Vdc, I
E
= 0
----
10
Adc
I
EBO
*
Emitter Cutoff Current
V
BE
= 4.0 Vdc, I
C
= 0
----
1.0
m
Adc
hFE
*
DC Current Gain
(Note 1)
I
C
= 500 mAdc, V
CE
= 1.5 Vdc
I
C
= 1.0 Adc, V
CE
= 1.5 Vdc
I
C
= 1.0 Adc, V
CE
= 1.5 Vdc, T
C
=
-
40
C
20
25
15
----
180
----
----
----
----
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
(Note 1)
I
C
= 1.0 Adc, I
B
= 100 mAdc,
T
C
=
-
40
C to
+
100
C
I
C
= 3.0 Adc, I
B
= 300 mAdc,
T
C
=
-
40
C to
+
100
C
----
----
0.75
1.5
Vdc
Vdc
V
BE(sat)
*
Base-Emitter Saturation
Voltage
(Note 1)
I
C
= 1.0 Adc, I
B
= 100 mAdc,
T
C
=
-
40
C to
+
100
C
I
C
= 3.0 Adc, I
B
= 300 mAdc,
T
C
=
-
40
C to
+
100
C
----
----
1.5
2.3
Vdc
Vdc
f
T
*
Current-Gain Bandwidth
Product
(Note 2)
I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 30 MHz
60
----
MHz
C
ob
*
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz
----
120
pF
C
ib
*
Input Capacitance
V
EB
= 0.5 Vdc, I
C
= 0, f = 0.1 MHz
----
1000
pF
t
on
*
Turn-on Time
V
CC
= 12 Vdc, V
BE
(off)
= 0, I
C
= 1.0 Adc, I
B
1
= 0.1 Adc
----
100
ns
t
off
*
Turn-off Time
V
CC
= 12 Vdc, I
C
= 1.0 Adc, I
B
1
=
I
B
2
= 100 mAdc
----
400
ns
Note 1: Pulse Test: Pulse width
300
S, Duty Cycle = 2.0%.
Note 2: f
T
= | h
fe
|
*
f
test
* Indicates JEDEC registered data
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