TECHNICAL DATA
PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500/336
Devices
Qualified
Level
2N3810
2N3810L
2N3810U
2N3811
2N3811L
2N3811U
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
60
Vdc
Collector-Base Voltage
V
CBO
60
Vdc
Emitter-Base Voltage
V
EBO
5.0
Vdc
Collector Current
I
C
50
mAdc
One
Section
1
Both
Sections
2
Total Power Dissipation @ T
A
= +25
0
C
P
T
0.5
0.6
W
Operating & Storage Junction Temperature Range
T
J,
T
stg
-65 to +200
0
C
1) Derate linearly 2.86 mW/
0
C for T
A
> +25
0
C
2) Derate linearly 3.43 mW/
0
C for T
A
> +25
0
C
TO-78*
*See appendix A
for package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I
C
= 10
Adc
V
(BR)CBO
60
Vdc
Collector-Emitter Breakdown Current
I
C
= 10 mAdc
V
(BR)CEO
60
Vdc
Emitter-Base Breakdown Voltage
I
E
= 10
Adc
V
(BR)EBO
5.0
Vdc
Collector-Base Cutoff Current
V
CB
= 50 Vdc
I
CBO
10
Adc
Emitter-Base Cutoff Current
V
EB
= 4.0 Vdc
I
EBO
10
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3810, 2N3810L, 2N3811, 2N3811L JAN SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
I
C
= 10
Adc, V
CE
= 5.0 Vdc 2N3810, 2N3810L
I
C
= 100
Adc, V
CE
= 5.0 Vdc
I
C
= 500
Adc, V
CE
= 5.0 Vdc
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc
I
C
= 10 mAdc, V
CE
= 5.0 Vdc
I
C
= 1.0
Adc, V
CE
= 5.0Vdc 2N3811, 2N3811L
I
C
= 10
Adc, V
CE
= 5.0 Vdc
I
C
= 100
Adc, V
CE
= 5.0 Vdc
I
C
= 500
Adc, V
CE
= 5.0 Vdc
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc
I
C
= 10 mAdc, V
CE
= 5.0 Vdc
h
FE
100
150
150
150
125
75
225
300
300
300
250
450
450
450
900
900
900
Collector-Emitter Saturation Voltage
I
C
= 100
Adc, I
B
= 10
Adc
I
C
= 1.0 mAdc, I
B
= 100
Adc
V
CE(sat)
0.2
0.25
Vdc
Base-Emitter Saturation Voltage
I
C
= 100
Adc, I
B
= 10
Adc
I
C
= 1.0 mAdc, I
B
= 100
Adc
V
BE(sat)
0.7
0.8
Vdc
Base-Emitter Non-Saturation Voltage
V
CE
= 5.0 Adc, I
C
= 100
Adc
V
BE
0.7
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
I
C
= 500
Adc, V
CE
= 5.0 Vdc, f = 30 MHz
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz
h
fe
1.0
1.0
5.0
Small-Signal Short Circuit Forward Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz 2N3810, L
2N3811, L
h
fe
150
300
600
900
Small-Signal Short Circuit Input Impedance
I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz 2N3810, L
2N3811, L
h
je
3.0
3.0
30
40
k
Small-Signal Short Circuit Output Admittance
I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz
h
oe
5.0
60
mhos
Output Capacitance
V
CB
= 5.0 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
C
obo
5.0
pF
Input Capacitance
V
EB
= 0.5 Vdc, I
C
= 0, 100 kHz
f
1.0 MHz
C
ibo
8.0
pF
Noise Figure
2N3810, L
I
C
= 100
Adc, V
CE
= 10 Vdc, f = 100 Hz, R
G
= 3.0 k
I
C
= 100
Adc, V
CE
= 10 Vdc, f = 1.0 kHz, R
G
= 3.0 k
I
C
= 100
Adc, V
CE
= 10 Vdc, f = 10 kHz, R
G
= 3.0 k
I
C
= 100
Adc, V
CE
= 10 Vdc, f = 10 Hz to 15.7 kHz, R
G
= 3.0 k
2N3811, L
I
C
= 100
Adc, V
CE
= 10 Vdc, f = 100 Hz, R
G
= 3.0 k
I
C
= 100
Adc, V
CE
= 10 Vdc, f = 1.0 kHz, R
G
= 3.0 k
I
C
= 100
Adc, V
CE
= 10 Vdc, f = 10 kHz, R
G
= 3.0 k
I
C
= 100
Adc, V
CE
= 10 Vdc, f = 10 Hz to 15.7 kHz, R
G
= 3.0 k
F
1
F
2
F
3
F
4
F
1
F
2
F
3
F
4
7.0
3.0
2.5
3.5
4.0
1.5
2.0
2.5
dB
dB
(3) Pulse Test: Pulse Width = 300
s, Duty Cycle
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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