TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/394
Devices
Qualified Level
2N4150
2N4150S
2N5237
2N5237S
2N5238
2N5238S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N4150
2N4150S
2N5237
2N5237S
2N5238
2N5238S
Unit
Collector-Emitter Voltage
V
CEO
70
120
170
Vdc
Collector-Base Voltage
V
CBO
100
150
200
Vdc
Emitter-Base Voltage
V
EBO
10
Vdc
Collector Current
I
C
10
Adc
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +100
0
C
(2)
P
T
1.0
5.0
W
Operating & Storage Junction Temp. Range
T
J,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
Junction-to-Ambient
R
JC
R
JA
0.020
0.175
0
C/mW
1) Derate linearly @ 5.7 mW/
0
C for T
A
> +25
0
C
2)
Derate linearly @ 50 mW/
0
C for T
C
> +25
0
C
TO- 5*
2N4150, 2N5237,
2N5238
TO-39*
(TO-205AD)
2N4150S, 2N5237S,
2N5238S
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Emitter-Base Breakdown Voltage
I
E
= 10
Adc
V
(BR)EBO
7.0
Vdc
Collector-Emitter Breakdown Voltage
I
C
= 0.1 Adc 2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
V
(BR)CEO
70
120
170
Vdc
Collector-Emitter Cutoff Current
V
EB
= 0.5 Vdc, V
CE
= 60 Vdc 2N4150, 2N4150S
V
EB
= 0.5 Vdc, V
CE
= 110 Vdc 2N5237, 2N5237S
V
EB
= 0.5 Vdc, V
CE
= 160 Vdc 2N5238, 2N5238S
I
CEX
10
10
10
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N4150, 2N4150S, 2N5237, 2N5237S, 2N5238, 2N5238S JAN SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS (con't)
Collector-Base Cutoff Current
V
CE
= 60 Vdc 2N4150, 2N4150S
V
CE
= 110 Vdc 2N5237, 2N5237S
V
CE
= 160 Vdc 2N5238, 2N5238S
I
CEO
10
10
10
Adc
Emitter-Base Cutoff Current
V
BE
= 7.0 Vdc
V
BE
= 5.0 Vdc
I
EBO
10
0.1
Adc
Collector-Base Cutoff Current
V
CB
= 100 Vdc 2N4150, 2N4150S
V
CB
= 150 Vdc 2N5237, 2N5237S
V
CB
= 200 Vdc 2N5238, 2N5238S
V
CB
= 80 Vdc All Types
I
CBO
10
10
10
0.1
Adc
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 1.0 Adc, V
CE
= 5.0 Vdc 2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
I
C
= 5.0 Adc, V
CE
= 5.0 Vdc All Types
I
C
= 10 Adc, V
CE
= 5.0 Vdc All Types
h
FE
50
50
50
40
10
200
225
225
120
-
Collector-Emitter Saturation Voltage
I
C
= 5.0 Adc, I
B
= 0.5 Adc
I
C
= 10 Adc, I
B
= 1.0 Adc
V
CE(sat)
0.6
2.5
Vdc
Base-Emitter Saturation Voltage
I
C
= 5.0 Adc, I
B
= 0.5 Adc
I
C
= 10 Adc, I
B
= 1.0 Adc
V
BE(sat)
1.5
25
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 0.2 Adc, V
CE
= 10 Vdc, f = 10 MHz
h
fe
1.5
7.5
Forward Current Transfer Ratio
I
C
= 50 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz 2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
h
fe
40
40
40
160
160
250
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
C
obo
350
pF
SWITCHING CHARACTERISTICS
Delay Time
V
CC
= 20 Vdc, V
BB
= 5.0 Vdc,
t
d
50
s
Rise Time
I
C
= 5.0 Adc, I
B1
=
0.5
Adc
t
r
500
s
Storage Time
V
CC
= 20 Vdc, V
BB
= 5.0 Vdc,
t
s
1.5
s
Fall Time
I
C
= 5.0 Adc, I
B1
= -
I
B2
=
0.5 Adc
t
f
500
s
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 40 Vdc, I
C
= 0.22 Adc
Test 2
V
CE
= 70 Vdc, I
C
= 90 mAdc
Test 3
V
CE
= 120 Vdc, I
C
= 15 mAdc 2N5237, 2N5237S
V
CE
= 170 Vdc, I
C
= 3.5 mAdc 2N5238, 2N5238S
(3) Pulse Test: Pulse Width = 300
s, Duty Cycle
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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