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Электронный компонент: 2N5671

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TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/488
Devices
Qualified Level
2N5671
2N5672



JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N5671 2N5672 Unit
Collector-Emitter Voltage
V
CEO
90
120
Vdc
Collector-Base Voltage
V
CBO
120
150
Vdc
Emitter-Base Voltage
V
EBO
7.0
Vdc
Base Current
I
B
10
Adc
Collector Current
I
C
30
Adc
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
6.0
140
W
W
Operating & Storage Temperature Range
T
op,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
R
JC
1.25
0
C/W
1) Derate linearly 34.2 mW/
0
C for T
A
> +25
0
C
2)
Derate linearly 800 mW/
0
C for T
C
> +25
0
C



TO-3*
(TO-204AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc 2N5671
2N5672
V
(BR)CEO
90
120
Vdc
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc 2N5671
2N5672
V
(BR)CER
110
140
Vdc
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc 2N5671
2N5672
V
(BR)CEX
120
150
Vdc
Collector-Emitter Cutoff Current
V
CE
= 80 Vdc
I
CEO
10
mAdc
Collector-Emitter Cutoff Current
V
CE
= 110 Vdc, V
BE
= 1.5 Vdc 2N5671
V
CE
= 135 Vdc, V
BE
= 1.5 Vdc 2N5672
I
CEX
12
10
mAdc

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N5671, 2N5672 JAN SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS (con't)
Collector-Base Cutoff Current
V
CB
= 120 Vdc 2N5671
V
CB
= 150 Vdc 2N5672
I
CBO
25
25
mAdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
I
EBO
10
mAdc
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 15 Adc, V
CE
= 2.0 Vdc
I
C
= 20 Adc, V
CE
= 5.0 Vdc
h
FE
20
20
100
Collector-Emitter Saturation Voltage
I
C
= 15 Adc, I
B
= 1.2 Adc
I
C
= 30 Adc, I
B
= 6.0Adc
V
CE(sat)
0.75
5.0
Vdc
Base-Emitter Saturation Voltage
I
C
= 15 Adc, I
B
= 1.2 Adc
V
BE(sat)
1.5
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 2.0 Adc, V
CE
= 10 Vdc, f = 5.0 MHz
h
fe
10
40
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
C
obo
900
pF
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30
2.0 Vdc; I
C
= 15 Adc; I
B1
= 1.2 Adc
t
on
0.5
s
Turn-Off Time
V
CC
= 30
2.0 Vdc; I
C
= 15 Adc; I
B1
= I
B2
= 1.2 Adc
t
off
1.5
s
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t = 1.0 s
Test
V
CE
= 24 Vdc, I
C
= 5.8 Adc
Test 2
V
CE
= 45 Vdc, I
C
= 0.9 Adc
Test 3
V
CE
= 4.67 Vdc, I
C
= 30 Adc
Test 4
V
CE
= 90 Vdc, I
C
= 0.19 Adc 2N5671
Test 5
V
CE
= 120 Vdc, I
C
= 0.11 Adc 2N5672
(3) Pulse Test: Pulse Width = 300
s, Duty Cycle
2.0%.

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2