MSC1062.PDF 05-25-99
2N6303
ABSOLUTE MAXIMUM RATI
ABSOLUTE MAXIMUM RATINGS:
NGS:
SYMBOL
CHARACTERISTIC
VALUE
UNITS
V
CEO
*
Collector-Emitter Voltage
-
80
Vdc
V
CB
*
Collector-Base Voltage
-
80
Vdc
V
EB
*
Emitter-Base Voltage
-
4.0
Vdc
I
C
*
Peak Collector Current
10
Adc
I
C
*
Continuous Collector Current
3.0
Adc
I
B
*
Base Current
0.5
Adc
T
STG
*
Storage Temperature
-65 to 200
C
T
J
*
Operating Junction Temperature
-65 to 200
C
P
D
*
Total Device Dissipation
T
C
= 25
C
Derate above 25
C
6.0
34.3
Watts
mW/
C
P
D
*
JC
Total Device Dissipation
T
A
= 25
C
Derate above 25
C
Thermal Resistance
Junction to Case
Junction to Ambient
1.0
5.71
29
175
Watts
mW/
C
C/W
C/W
Silicon PNP Power
Transistors
TO-5
APPLICATIONS:
High-Speed Switching
Medium-Current Switching
High-Frequency Amplifiers
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE DIFFUSED
PLANAR process. This technology produces high voltage devices
with excellent switching speeds, frequency response, gain linearity,
saturation voltages, high current gain, and safe operating areas.
They are intended for use in Commercial, Industrial, and Military
power switching, amplifier, and regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are
utilized to further increase the SOA capability and inherent reliability
of these devices. The temperature range to 200
C permits reliable
operation in high ambients, and the hermetically sealed package
insures maximum reliability and long life.
*
Indicates JEDEC registered data.
FEATURES:
Collector-Emitter Sustaining Voltage: V
CEO(sus)
=
-
80 Vdc (Min)
DC Current Gain: h
FE
= 30-150 @ I
C
= 1.5 Adc
Low Collector-Emitter Saturation Voltage:
V
CE(sat)
=
-
0.75 Vdc @ I
C
= 1.5 Adc
High Current-Gain - Bandwidth Product: f
T
= 90 MHz (Typ)
MSC1062.PDF 05-25-99
2N6303
ELECTRICAL CHARACTERISTICS:
ELECTRICAL CHARACTERISTICS:
(25
Case Temperature Unless Otherwise Noted)
VALUE
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Min.
Max.
Units
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
I
C
= 20 mAdc, I
B
= 0 (Note 1)
-
80
----
Vdc
BV
CBO
*
Collector-Base
Breakdown Voltage
I
C
= 100
Adc, I
E
= 0
-
80
----
Vdc
BV
EBO
*
Emitter-Base Breakdown
Voltage
I
E
= 100
Adc, I
C
= 0
-
4.0
----
Vdc
I
CEX
*
Collector Cutoff Current
V
CE
=
-
80V
,
V
BE(off)
= 2.0 Vdc
----
1.0
Adc
I
CBO
*
Collector Cutoff Current
V
CB
=
-
80V, I
E
= 0, T
C
= 150
C
----
150
Adc
h
FE
*
DC Current Gain
(Note 1)
I
C
= 500 mAdc, V
CE
=
-
1.0 Vdc
I
C
= 1.5 Adc, V
CE
=
-
2.0 Vdc
I
C
= 2.5 Adc, V
CE
=
-
3.0 Vdc
I
C
= 3.0 Adc, V
CE
=
-
5.0 Vdc
35
30
20
20
----
150
----
----
----
----
----
----
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
(Note 1)
I
C
= 500 mAdc, I
B
= 50 mAdc
I
C
= 1.5 Adc, I
B
= 150 mAdc
I
C
= 2.5 Adc, I
B
= 250 mAdc
----
----
----
-
0.5
-
0.75
-
1.3
Vdc
Vdc
Vdc
V
BE(sat)
*
Base-Emitter Saturation
Voltage
(Note 1)
I
C
= 500 mAdc, I
B
= 50 mAdc
I
C
= 1.5 Adc, I
B
= 150 mAdc
I
C
= 2.5 Adc, I
B
= 250 mAdc
----
-
0.9
----
-
1.0
-
1.4
-
2.0
Vdc
Vdc
Vdc
f
T
*
Current Gain Bandwidth
Product (Note 2)
I
C
= 100 mAdc, V
CE
=
-
5.0 Vdc, f
test
= 20 MHz
60
----
MHz
C
ob
*
Output Capacitance
V
CB
=
-
10 Vdc, I
E
= 0, f = 0.1 MHz
----
120
pF
C
ib
*
Input Capacitance
V
EB
=
-
3.0 Vdc, I
C
= 0, f = 0.1 MHz
----
1000
pF
td
*
Delay Time
V
CC
=
-
30 Vdc, V
BE(off)
= 0, I
C
=1.5 Adc,
I
B1
= 150 mAdc
----
35
ns
tr
*
Rise Time
V
CC
=
-
30 Vdc, V
BE(off)
= 0, I
C
=1.5 Adc,
I
B1
= 150 mAdc
----
65
ns
ts*
Storage Time
V
CC
=
-
30 Vdc, IC = 1.5 Adc, I
B1
= I
B2
=150 mAdc
----
325
ns
tf*
Fall Time
V
CC
=
-
30 Vdc, IC = 1.5 Adc, I
B1
= I
B2
=150 mAdc
----
75
ns
Note 1: Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%.
Note 2: fT = |hfe| * f
test
* Indicates JEDEC registered data.
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