TECHNICAL DATA
MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/558
Devices
Qualified Level
2N6987
2N6987U
2N6988
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
(1)
Ratings
Symbol
Value
Units
Collector-Emitter Voltage
(4)
V
CEO
60
Vdc
Collector-Base Voltage
(4)
V
CBO
60
Vdc
Emitter-Base Voltage
(4)
V
EBO
5.0
Vdc
Collector Current
I
C
600
mAdc
Total Power Dissipation @ T
A
= +25
0
C
2N6987
(2)
2N6987U
(2)
2N6988
(3)
P
T
1.5
1.0
0.4
W
Operating & Storage Junction Temperature Range
T
op,
T
stg
-65 to +200
0
C
1) Maximum voltage between transistors shall be
500 Vdc
2) Derate linearly 8.57 mW/
0
C above T
A
= +25
0
C
3) Derate linearly 2.286 mW/
0
C above T
A
= +25
0
C.
4) Ratings apply to each transistor in the array.
2N6987*
TO- 116
2N6987U*
20 PIN LEADLESS
2N6988*
14 PIN FLAT PACK
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
V
(BR)CEO
60
Vdc
Collector-Base Cutoff Current
V
CB
= 60 Vdc
V
CB
= 50 Vdc
I
CBO
10
10
Adc
Adc
Emitter-Base Cutoff Current
V
BE
= 5.0 Vdc
V
EB
= 3.5 Vdc
I
EBO
10
50
Adc
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6987, 2N6988 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
C
= 0.1 mAdc, V
CE
= 10 Vdc
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 500 mAdc, V
CE
=10 Vdc
h
FE
75
100
100
100
50
450
300
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
V
CE(sat)
0.4
1.6
Vdc
Base-Emitter Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
V
BE(sat)
1.3
2.6
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Short-Circuit
Forward-Current Transfer Ratio
I
C
= 50 mAdc, V
CE
= 20 Vdc, f = 100 MHz
h
fe
2.0
8.0
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz
h
fe
100
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
C
obo
8.0
pF
Input Capacitance
V
EB
= 2.0 Vdc, I
C
= 0, 100 kHz
f
1.0 MHz
C
ibo
30
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
PDF 
ZIP