TECHNICAL DATA
MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK
SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/559
Devices
Qualified Level
2N6989
2N6989U
2N6990
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
(1)
Ratings
Symbol
Value
Units
Collector-Emitter Voltage
(3)
V
CEO
50
Vdc
Collector-Base Voltage
(3)
V
CBO
75
Vdc
Emitter-Base Voltage
(3)
V
EBO
6.0
Vdc
Collector Current
(3)
I
C
800
mAdc
Total Power Dissipation @ T
A
= +25
0
C
2N6989
(2)
2N6989U
(2)
2N6990
(2)
P
D
1.5
1.0
0.4
W
Operating & Storage Junction Temperature Range
T
op,
T
stg
-65 to +200
0
C
1) Maximum voltage between transistors shall be
500 Vdc
2) Derate linearly 8.57 mW/
0
C above T
A
= +25
0
C for 2N6989 and 2N6989U
Derate linearly 2.286 mW/
0
C above T
A
= +25
0
C for 2N6990
Ratings apply to total package.
3) Ratings apply to each transistor in the array.
TO- 116*
2N6989
20 PIN LEADLESS*
2N6989U
14 PIN FLAT PACK*
2N6990
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
V
(BR)CEO
50
Vdc
Collector-Base Cutoff Current
V
CB
= 60 Vdc
V
CB
= 75 Vdc; I
c
= 10
Adc
I
CBO
10
10
Adc
Adc
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc
V
EB
= 6.0Vdc; I
c
= 10
Adc
I
EBO
10
10
Adc
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6989, 2N6990 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(4)
Forward-Current Transfer Ratio
I
C
= 0.1 mAdc, V
CE
= 10 Vdc
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 500 mAdc, V
CE
= 10 Vdc
h
FE
50
75
100
100
30
325
300
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
V
CE(sat)
0.3
1.0
Vdc
Base-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
V
BE(sat)
0.6
1.2
2.0
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 20 mAdc, V
CE
= 10 Vdc, f = 100 MHz
h
fe
2.5
8.0
Forward Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz
h
fe
50
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
C
obo
8.0
pF
Input Capacitance
V
EB
= 0.5 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
C
ibo
25
pF
(4) Pulse Test: Pulse Width = 300
s, Duty Cycle
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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