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Электронный компонент: JAN1N3600

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V F1
V F2
V F3
V F4
V F5
Limits
I F = 1 mA dc
I F = 10 mA dc
I F = 50 mA dc
I F = 100 mA dc I F = 200 mA dc
(Pulsed)
(Pulsed)
(Pulsed)
V dc
V dc
V dc
V dc
V dc
minimum
0.540
0.660
0.760
0.820
0.870
maximum
0.620
0.740
0.860
0.920
1.000
Type
V BR
V RWM
I R1
1 R2
C
trr
VR = 50 V dc
VR = 50 V dc
VR = 0; f = 1 Mhz; IF= IR= 10 to 100 mA dc
IR = 10 A
TA = 25C
TA = 150C
ac signals = 50 mV (p-p)
RL = 100 ohms
V dc
V (pk)
A dc
A dc
pF
ns
1N3600
75
50
0.1
100
2.5
4
1N4150,-1
75
50
0.1
100
2.5
4
37
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (781) 689-0803
WEBSITE: http://www.microsemi.com
1N4150
and
1N4150-1
and
1N3600
MAXIMUM RATINGS
Junction Temperature: -65C to +175C
Storage Temperature: -65C to +175C
Operating Current: 300 mA @ TA = +25C
Derating: 2.0 mA dc/C Above TL = + 75C @ L = 3/8"
Forward Surge Current: 4A, (tp = 1s); 0.5A (tp = 1s)
ELECTRICAL CHARACTERISTICS @ 25C, unless otherwise specied.
1N4150-1 AVAILABLE IN
JAN, JANTX,
AND
JANTXV
PER MIL-PRF-19500/231
1N3600 AVAILABLE IN
JAN, JANTX,
AND
JANTXV
PER MIL-PRF-19500/231
SWITCHING DIODES
HERMETICALLY SEALED
METALLURGICALLY BONDED
DOUBLE PLUG CONSTRUCTION
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed
glass case per MIL-S-19500/231
D0-35 outline.
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJL):
250 C/W maximum at L = .375
THERMAL IMPEDANCE: (ZOJX): 70
C/W maximum
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
FORWARD VOLTAGE LIMITS ALL TYPES
38
IN4150, IN4150-1
and
IN3600
.3
.4
.5
.6
.7
.8
.9
1.0
1.1
1.2
1.3
VF - Forward Voltage (V)
FIGURE 2
Typical Forward Current
vs Forward Voltage
I F
- Forward Current - (mA)
1000
100
10
1
0.1
150C
100C
25C
-65C
20
40
60
80 100 120 140
Percent of Reverse Working Voltage (%)
FIGURE 3
Typical Reverse Current
vs Reverse Voltage
I R
- Reverse Current - (
A)
1000
100
10
1
0.1
.01
.001
150C
100C
25C
-65C
NOTE :
All temperatures shown on graphs are
junction temperatures