MILLIMETERS INCHES
DIM
MIN
MAX
MIN MAX
D
1.60
1.70
0.063 0.067
F
0.41
0.55
0.016 0.022
G
3.30
3.70
.130 .146
G1
2.54 REF.
.100 REF.
S
0.03 MIN.
.001 MIN.
113
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (781) 689-0803
WEBSITE: http://www.microsemi.com
ELECTRICAL CHARACTERISTICS @ 25C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65C to +200C
Storage Temperature: -65C to +200C
Operating Current: 200 mA @ TA = + 25C
Derating Factor: 1.14 mA/C Above TA = + 25C
Surge Current A: 2A, sine wave, Pw = 8.3ms
Surge Current B: 1.41A, square wave, Pw = 8.3ms
1N4148UR-1 AVAILABLE IN
JAN, JANTX,
AND
JANTXV
PER MIL-PRF-19500/116
SWITCHING DIODE
HERMETICALLY SEALED
METALLURGICALLY BONDED
DOUBLE PLUG CONSTRUCTION
FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE (ROJEC):
100 C/W maximum AT L = 0
THERMAL IMPEDANCE: (ZOJX): 70
C/W maximum
POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
1N4148UR-1
and
CDLL4148
I R1
I R2
I R3
I R4
CAPACITANCE
CAPACITANCE
@ 20 V dc
@ 75 V dc
@ 20 V
@ 75 V
@ 0 V
@ 1.5 V
TA = 150C
TA = 150C
nA
A
A
A
pF
pF
25
0.5
35
75
4.0
2.8
Vf 1
Vf 2
t rr
VBR
V RWM
I0
@I F = 10 mA @I F = 100 mA
(Note 1)
@100
A
Volts
Volts (pk)
mA
V dc
V dc
n sec
100
75
200
0.8
1.2
5
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