FIGURE 1
DESIGN DATA
CASE: Hermetically sealed glass
case. DO-7 outline
LEAD MATERIAL: Copper clad steel
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
200 C/W maximum
THERMAL IMPEDANCE: (ZOJX): 70
C/W maximum
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
9
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (781) 689-0803
WEBSITE: http://www.microsemi.com
AVAILABLE IN
JAN, JANTX,
AND
JANTXV
PER MIL-PRF-19500/118
GENERAL PURPOSE SILICON DIODES
METALLURGICALLY BONDED
1N483B
1N485B
1N486B
ELECTRICAL CHARACTERISTICS @ 25C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65C to +175C
Storage Temperature: -65C to +175C
Operating Current: 200 mA
Derating: 1.2 mA/C From 25C to 150C
1.0 mA/C From 150C to 175C
Forward Current: 650 mA
TYPE
VRM
V RWM
I O
I O
I FSM
TA = 150C
TP = 1/120 s
TA = 25C
V (pk)
V (pk)
mA
mA
A
1N483B
80
70
200
50
2
1N485B
180
180
200
50
2
1N486B
250
225
200
50
2
TYPE
VF
I R1 at V RWM I R2 at V RM I R3 at V RWM
@100mA
TA = 25C
TA = 25C
TA = 150C
V dc
nA dc
A
A dc
1N483B
0.8 - 1.0
25
100
5
1N485B
0.8 - 1.0
25
100
5
1N486B
0.8 - 1.0
25
100
5
0.085/0.125
2.16/3.18
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