TECHNICAL DATA
ULTRAFAST SILICON POWER RECTIFIER
Qualified per MIL-PRF-19500/646
Devices
Qualified Level
1N6774
1N6775
1N6776
1N6777
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
1N6774
1N6775
1N6776
1N6777
Unit
Working Peak Reverse Voltage
V
RWM
50
100
150
200
Vdc
Forward Current T
C
= +100
C
(1)
I
F
15
Adc
Forward Current Surge Peak T
P
= 8.3
0
C
I
FSM
180
A
pk
Operating & Storage Junction Temperature T
op,
T
stg
-65 to +150
0
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
R
JC
2.0
0
C/W
Thermal Resistance, Junction-to-Ambient
R
JA
40
0
C/W
1) Derate at 300 mA/
0
C above T
C
= +100
0
C
TO-257*
(2-PIN-ISOLATED)
*See appendix A for
ELECTRICAL CHARACTERISTICS (T
C
= +25
0
C Unless Otherwise Noted)
package
outline
Characteristics
Symbol
Min.
Max.
Unit
Forward Voltage
I
F
=
8.0 Adc, pulsed
I
F
= 15
Adc, pulsed
V
F
1.00
1.15
Vdc
Reverse Current Leakage
V
R
= 0.8 of V
RWM
I
R
10
Adc
Thermal Impedance
I
M
=15 mAdc; I
H
= 9.9 Adc;
t
H = 200 ms;
t
MD = 35
s; V
H
= 1
Vdc
Z
JX
1.8
0
C/W
Breakdown Voltage
I
R
= 10
Adc 1N6774
1N6775
1N6776
1N6777
V
BR
50
100
150
200
Vdc
Junction Capacitance
V
R
= 5.0 Vdc, f = 1.0 MHz
C
J
300
pF
Reverse Recovery Time
I
F
= 1.0 Adc; di/dt = 50 A/
s
t
rr
35
s
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 1
PDF 
ZIP