TECHNICAL DATA
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/313
Devices
Qualified Level
2N2432
2N2432A
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N2432 2N2432A Unit
Collector-Emitter Voltage
V
CEO
30
45
Vdc
Collector-Base Voltage
V
CBO
30
45
Vdc
Emitter-Collector Voltage
V
ECO
15
18
Vdc
Collector Current
I
C
100
mAdc
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
300
600
mW
mW
Operating & Storage Junction Temp. Range
T
stg
T
J
-65 to +200
-65 to +175
0
C
0
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
R
JC
0.25
mW/
0
C
1) Derate linearly 2.0 mW/
0
C above T
A
> +25
0
C
2) Derate linearly 4.0 mW/
0
C above T
C
> +25
0
C
TO- 18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Emitter-Collector Breakdown Voltage
I
E
= 100
Adc, I
B
= 0 2N2432
2N2432A
I
E
= 10 mAdc, I
B
= 0 Both
V
(BR)ECO
15
18
10
Vdc
Collector-Emitter Breakdown Current
I
C
= 10 mAdc 2N2432
2N2432A
V
(BR)CEO
30
45
Vdc
Collector-Emitter Cutoff Current
V
CB
= 25 Vdc 2N2432
V
CB
= 40 Vdc 2N2432A
I
CES
10
10
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N2432, 2N2432A JAN SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS (con't)
Collector-Emitter Cutoff Current
V
CB
= 30 Vdc 2N2432
V
CB
= 25 Vdc 2N2432
V
CB
= 40 Vdc 2N2432A
V
CB
= 45 Vdc 2N2432A
I
CBO
100
10
100
10
Adc
Adc
Adc
Adc
Emitter-Collector Cutoff Current
V
EC
= 15 Vdc
,
V
BC
= 0 Vdc
I
ECS
2.0
Adc
Emitter-Base Cutoff Current
V
EB
= 15 Vdc
I
EBO
2.0
Adc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
I
C
= 10
Adc, V
CE
= 5.0 Vdc
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc
h
FE
30
80
400
Forward-Current Transfer Ratio (Inverted Connection)
I
C
= 0.2 mAdc, V
CE
= 5.0 Vdc 2N2432
2N2432A
h
FE(inv)
2.0
3.0
Collector-Emitter Saturation Voltage
I
C
= 10 Vdc, I
B
= 0.5 mAdc
V
CE(sat)
0.15
mVdc
Emitter-Collector Offset Voltage
I
E
= 0 mAdc, I
B
= 200
Adc 2N2432
2N2432A
I
E
= 0 mAdc, I
B
= 1.0 mAdc 2N2432
2N2432A
V
EC(ofs)
0.5
0.4
0.1
0.7
mVdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 20 MHz
h
fe
2.0
10
Output Capacitance
V
CB
= 0 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
C
obo
12
pF
Input Capacitance
V
EB
= 0 Vdc, I
C
= 0, 100 kHz
f
1.0 MHz
C
ibo
12
pF
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
PDF 
ZIP