TECHNICAL DATA
P-CHANNEL J-FET
Qualified per MIL-PRF-19500/295
Devices
Qualified Level
2N2608
JAN
ABSOLUTE MAXIMUM RATINGS
(T
A
= +25
0
C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Units
Gate-Source Voltage
V
GSS
30
V
Power Dissipation
(1)
T
A
= +25
0
C
P
D
300
mW
Operating Junction & Storage Temperature Range
T
op,
T
stg
-65 to +200
0
C
(1) Derate linearly 1.71 mW/
0
C for T
A
> +25
0
C.
TO-18
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS
(T
A
= +25
0
C unless otherwise noted)
PARAMETERS / TEST CONDITIONS
Symbol
Min.
Max.
Units
Gate-Source Breakdown Voltage
V
DS
= 0, I
G
= 1.0
Adc
V
(BR)GSS
30
Vdc
Gate Reverse Current
V
DS
= 0, V
GS
= 30 Vdc
V
DS
= 0, V
GS
= 15 Vdc
I
GSS
10
7.5
Adc
Drain Current
V
GS
= 0, V
DS
= 5.0 Vdc
I
DDSS
-1.0
-5.0
mAdc
Gate-Source Cutoff Voltage
V
DS
= 5.0 V, I
D
= 1.0
Adc
V
GS(off)
0.75
6.0
Vdc
Magnitude of Small-Signal, Common-Source Short-Circuit Forward
Transfer Admittance
V
GS
= 0, V
DS
= 5.0 Vdc, f = 1.0 kHz
Y
fs2
1,000
4,500
mho
Small-Signal, Common-Source Short-Circuit Input Capacitance
V
GS
= 0, V
DS
= 5.0 Vdc, f = 1.0 MHz
C
iss
10
pF
Common-Source Spot Noise Figure
V
GS
= 0, V
DS
= 5.0 Vdc, f = 1.0 kHz
B
W
= 16%, R
G
= 1.0 megohms, e
gen
= 1.82 mVdc, R
L
= 470
NF
3.0
dB
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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