ChipFind - документация

Электронный компонент: JAN2N3585

Скачать:  PDF   ZIP
TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/384
Devices
Qualified Level
2N3584
2N3585



JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N3584 2N3585 Units
Collector-Emitter Voltage
V
CEO
250
300
Vdc
Collector-Base Voltage
V
CBO
375
500
Vdc
Collector-Base Voltage
V
CER
300
400
Vdc
Emitter-Base Voltage
V
EBO
6.0
Vdc
Base Current
I
B
1.0
Adc
Collector Current
I
C
2.0
Adc
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
2.5
35
W
W
Operating & Storage Junction Temperature Range
T
J,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
R
JC
5.0
0
C/W
1) Derate linearly @ 14.85 mW/
0
C for T
A
> +25
0
C
2)
Derate linearly @ 200 mW/
0
C for T
C
> +25
0
C







TO-66* (TO-213AA)
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc 2N3584
2N3585
V
(BR)CEO
250
300
Vdc
Collector-Base Breakdown Voltage
I
C
= 15 mAdc 2N3584
2N3585
V
(BR)CER
375
500
Vdc
Collector-Emitter Cutoff Current
V
CE
= 150 Vdc
I
CEO
5.0
mAdc
Collector-Emitter Cutoff Current
V
CE
= 300 Vdc, V
BE
= 1.5 Vdc 2N3584
V
CE
= 400 Vdc, V
BE
= 1.5 Vdc 2N3585
I
CEX
1.0
1.0
mAdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
I
EBO
0.5
mAdc

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3584, 2N3585 JAN SERIES

ELECTRICAL CHARACTERISTICS (con't)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 1.0 Adc, V
CE
= 10 Vdc
I
C
= 100 mAdc, V
CE
= 10 Vdc
h
FE
25
40
100
Collector-Emitter Saturation Voltage
I
C
= 1.0 Adc, I
B
= 0.125 Adc
V
CE(sat)
0.75
Vdc
Base-Emitter Saturation Voltage
I
C
= 1.0 Adc, I
B
= 0.1 Adc
V
BE(sat)
1.4
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 200 mAdc, V
CE
= 10 Vdc, f = 5.0 MHz

h
fe

3.0

15
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 Adc, V
CE
= 10 Vdc, f = 1.0 kHz
h
fe
25
200
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
C
obo
120
pF
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 Vdc; I
C
= 1.0 Adc; I
B
= 100 mAdc; R
C
= 29
t
on
3.0
s
Turn-Off Time
V
CC
= 30 Vdc; I
C
= 1.0 Adc; I
B
=
-
I
B
= 100 mAdc; R
C
= 29
t
off
7.0
s
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 17.5 Vdc, I
C
= 2.0 Adc
Test 2
V
CE
= 100 Vdc, I
C
= 350 mAdc
Test 3
V
CE
=
250 Vdc,
I
C
= 37 mAdc 2N3584
V
CE
=
300 Vdc, I
C
= 17 mAdc 2N3585
(3) Pulse Test: Pulse Width = 300
s, Duty Cycle
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2