TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/350
Devices
Qualified Level
2N3867
2N3867S
2N3868
2N3868S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N3867
2N3867S
2N3868
2N3868S
Unit
Collector-Emitter Voltage
V
CEO
40
60
Vdc
Collector-Base Voltage
V
CBO
40
60
Vdc
Emitter-Base Voltage
V
EBO
4.0
Vdc
Collector Current -- Continuous
I
C
3.0
Adc
Total Power Dissipation @ T
A
= 25
0
C
(1)
@ T
C
= 25
0
C
(2)
P
T
1.0
10
W
W
Operating & Storage Temperature Range
T
OP,
T
STG
-55 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
R
JC
17.5
0
C/W
1) Derate linearly 5.71 mW/
0
C for T
A
> +25
0
C
2) Derate linearly 57.1 mW/
0
C for T
C
> +25
0
C
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I
C
= 100
Adc 2N3867, S
2N3868, S
V
(BR)CBO
40
60
Vdc
Collector-Emitter Breakdown Voltage
I
C
= 20 mAdc 2N3867, S
2N3868, S
V
(BR)CEO
40
60
Vdc
Emitter-Base Breakdown Voltage
I
E
= 100
Adc
V
(BR)EBO
4.0
Vdc
Collector-Emitter Cutoff Current
V
EB
= 2.0 Vdc, V
CE
= 40 Vdc 2N3867, S
V
EB
= 2.0 Vdc, V
CE
= 60 Vdc 2N3868, S
I
CEX
1.0
1.0
Adc
Collector-Base Cutoff Current
V
CB
= 40 Vdc 2N3867, S
V
CB
= 60 Vdc 2N3868, S
I
CBO
100
Adc
Emitter-Base Cutoff Current
V
EB
= 4 Vdc
I
EBO
100
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
TO-5*
2N3867, 2N3868
TO-39*
(TO-205AD)
2N3867S, 2N3868S
2N3867, S; 2N3868, S JAN SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 500 mAdc, V
CE
= 1.0 Vdc 2N3867, S
2N3868, S
I
C
= 1.5 Adc, V
CE
= 2.0 Vdc 2N3867, S
2N3868, S
I
C
= 2.5 Adc, V
CE
= 3.0 Vdc 2N3867, S
2N3868, S
I
C
= 3.0 Adc, V
CE
= 5.0 Vdc All Types
h
FE
50
35
40
30
25
20
20
200
150
Collector-Emitter Saturation Voltage
I
C
= 500 mAdc, I
B
= 50 mAdc
I
C
= 1.5 Adc, I
B
= 150 mAdc
I
C
= 2.5 Adc, I
B
= 250 mAdc
V
CE(sat)
0.5
0.75
1.5
Vdc
Base-Emitter Saturation Voltage
I
C
= 500 mAdc, I
B
= 50 mAdc
I
C
= 1.5 Adc, I
B
= 150 mAdc
I
C
= 2.5 Adc, I
B
= 250 mAdc
V
BE(sat)
0.9
1.0
1.4
2.0
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
I
C
= 100 mAdc, V
CE
= 5.0 Vdc, f = 20 MHz
h
fe
3.0
12
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
C
obo
120
pF
Input Capacitance
V
EB
= 3.0 Vdc, I
C
= 0, 100 kHz
f
1.0 MHz
C
ibo
800
pF
SWITCHING CHARACTERISTICS
Delay Time
V
CC
= -30 Vdc, V
EB
= 0,
t
d
35
s
Rise Time
I
C
= 1.5 Adc, I
B1
=
150 mAdc
t
r
65
s
Storage Time
V
CC
= -30 Vdc, V
EB
= 0,
t
s
500
s
Fall Time
I
C
= 1.5Adc, I
B1
=
I
B2
=
150 mAdc
t
f
100
s
Turn-On Time
V
CC
= 30, I
C
= 1.5 Adc, I
B
= 150 mAdc
t
on
100
s
Turn-Off Time
V
CC
= 30, I
C
= 1.5 Adc, I
B
= 150 mAdc
t
off
600
s
SAFE OPERATING AREA
DC Tests
T
C
= 25
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 3.33 Vdc, I
C
= 3.0 Adc
Test 2
V
CE
= 40 Vdc, I
C
= 160 mAdc 2N3867, S
V
CE
= 60 Vdc, I
C
= 80 mAdc 2N3868, S
(3) Pulse Test: Pulse Width = 300
s, Duty Cycle
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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