TECHNICAL DATA
PNP LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/485
Devices
Qualified Level
2N5415
2N5415S
2N5416
2N5416S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N5415 2N5416 Units
Collector-Emitter Voltage
V
CEO
200
300
Vdc
Collector-Base Voltage
V
CBO
200
350
Vdc
Emitter-Base Voltage
V
EBO
6.0
Vdc
Collector Current
I
C
1.0
Adc
Total Power Dissipation @ T
A
= +25
0
C
@ T
C
= +25
0
C
P
T
0.75
10
W
W
Operating & Storage Temperature Range
T
op,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
R
JC
17.5
0
C/W
1) Derate linearly 4.28 mW/
0
C for T
A
> +25
0
C
2) Derate linearly 57.1 mW/
0
C for T
C
> +25
0
C
TO- 5*
2N5415, 2N5416
2N5415S, 2N5416S
TO-39*
(TO-205AD)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Cutoff Current
V
CE
= 150 Vdc 2N5415
V
CE
= 200 Vdc 2N5415
V
CE
= 250 Vdc 2N5416
V
CE
= 300 Vdc 2N5416
I
CEO
50
1.0
50
1.0
Adc
mAdc
Adc
mAdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
I
EBO
20
Adc
Collector-Emitter Cutoff Current
V
CE
= 200 Vdc, V
BE
= 1.5 Vdc 2N5415
V
CE
= 300 Vdc, V
BE
= 1.5 Vdc 2N5416
I
CEX
50
50
Adc
Adc
Collector-Base Cutoff Current
V
CB
= 175 Vdc 2N5415
V
CB
= 280 Vdc 2N5416
I
CBO1
50
50
Adc
Collector-Base Cutoff Current
V
CB
= 200 Vdc 2N5415
V
CB
= 350 Vdc 2N5416
I
CBO2
500
500
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N5415, 2N5416 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 50 mAdc, V
CE
= 10 Vdc
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
h
FE
30
15
120
Collector-Emitter Saturation Voltage
I
C
= 50 mAdc, I
B
= 5.0 mAdc
V
CE(sat)
2.0
Vdc
Base-Emitter Voltage
I
C
= 50 mAdc, V
CE
= 10 Vdc
V
BE
1.5
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit Forward
Current Transfer Ratio
I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 5.0 MHz
h
fe
3.0
15
Forward Current Transfer Ratio
I
C
= 5.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz
h
fe
25
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
C
obo
15
pF
Input Capacitance
V
EB
= 5.0 Vdc, I
C
= 0, 100 kHz
f
1.0 MHz
C
ibo
75
pF
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
=200 Vdc, I
C
= 50 mAdc, I
B1
= 5.0 mAdc
t
on
1.0
s
Turn-Off Time
V
CC
= 200 Vdc, I
C
= 50 mAdc, I
B1
= I
B2
= 5.0 mAdc
t
off
10
s
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C; 1 Cycle; t = 0.4 s
Test 1
V
CE
= 10 Vdc, I
C
= 1.0 Adc
Test 2
V
CE
= 100 Vdc, I
C
= 100 mAdc
Test 3
V
CE
= 200 Vdc, I
C
= 24 mAdc 2N5415
Test 4
V
CE
= 300 Vdc, I
C
= 10 mAdc 2N5416
(3) Pulse Test: Pulse Width = 300
s, Duty Cycle
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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