TECHNICAL DATA
NPN SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500/495
Devices
Qualified
Level
2N5793
2N5794
2N5794U
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol
Value
Units
Collector-Emitter Voltage
V
CEO
40 Vdc
Collector-Base Voltage
V
CBO
75 Vdc
Emitter-Base Voltage
V
EBO
6.0 Vdc
Collector Current
I
C
600 mAdc
One
Section
(1)
Total
Device
(2)
Total Power Dissipation @ T
A
= +25
0
C
P
T
0.5 0.6
W
Operating & Storage Junction Temperature Range
T
op,
T
stg
-65 to +200
0
C
1) Derate linearly 2.86 mW/
0
C for T
A
> +25
0
C
2) Derate linearly 3.43 mW/
0
C for T
A
> +25
0
C
TO-78*
6 PIN SURFACE
MOUNT*
*See
MILPRF19500/495 for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 10 mAdc
V
(BR)
CEO
40 Vdc
Collector-Base Cutoff Current
V
CB
= 75 Vdc
V
CB
= 50 Vdc
I
CBO
10
10
Adc
Adc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
V
EB
= 4.0 Vdc
I
EBO
10
10
Adc
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
42203
Page 1 of 2
2N5793, 2N5794 JAN SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics
Symbol Min.
Max.
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
I
C
= 100
Adc, V
CE
= 10 Vdc
2N5793
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 300 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 1.0 Vdc
I
C
= 100
Adc, V
CE
= 10 Vdc
2N5794
I
C
= 1.0 mAdc, V
CE
= 10 Vdc 2N5794U
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 300 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 1.0 Vdc
h
FE
h
FE
20
25
35
40
25
20
35
50
75
100
40
50
120
300
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 300 mAdc, I
B
= 30 mAdc
V
CE(sat)
0.3
0.9
Vdc
Base-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 300 mAdc, I
B
= 30 mAdc
V
BE(sat)
0.6
1.2
1.8
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz
h
fe
2.0 10
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
f 1.0 MHz
C
obo
8.0 pF
Input Capacitance
V
EB
= 0.5 Vdc, I
C
= 0, 100 kHz
f 1.0 MHz
C
ibo
33 pF
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 Vdc; I
C
= 150 mAdc; I
B1
=
15 mAdc, V
BE(off)
= 0.5 Vdc
t
on
45
s
Turn-Off Time
V
CC
= 30 Vdc; I
C
= 150 mAdc; I
B1
=
I
B2
=
15 mAdc
t
off
310
s
(3) Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
42203
Page 2 of 2
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