DESIGN DATA
CASE: D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/533
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
50 C/W maximum
THERMAL IMPEDANCE: (ZOJX): 15
C/W maximum
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
MILLIMETERS
INCHES
DIM
MIN MAX
MIN MAX
D
1.78
2.16
0.070 0.085
F
0.48
0.71
0.019 0.028
G
4.19
4.95
0.165 0.195
S
0.08MIN.
0.003MIN.
FIGURE 1
151
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (781) 689-0803
WEBSITE: http://www.microsemi.com
AVAILABLE IN
JAN, JANTX, JANTXV
AND
JANS
PER MIL-PRF-19500/533
500 mW ZENER DIODES
NON CAVITY CONSTRUCTION
METALLURGICALLY BONDED
1N6309US
THRU
1N6320US
ELECTRICAL CHARACTERISTICS @ 25C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65C to +175C
Storage Temperature: -65C to +175C
Power Dissapation: 500 mW@TEC=+125C
Power Derating: 10 mW/C above TEC=+125C
Forward Voltage: 1.4V dc @ IF=1A dc (pulsed)
VZ2
VZ1
IZ2
ZZ
ZZK
IZM VZ (reg) IZSM
VR
IR1
IR2
ND
NOM. MIN.
TEST
@
@
SURGE
@
@
@250
A
TYPE 5%
@
@IZ1
CURRENT
IZ2
250
A
VZ
25C
TA=
1-3 kHz
IZ2
250
A
(1)
150C
VOLTS VOLTS
mA
OHMS
OHMS
mA VOLTS
AMPS VOLTS
A
A
V/ Hz
1N6309US
2.4
1.1
20
30
1200
177
1.5
2.5
1.0
100
200
1.0
1N6310US
2.7
1.2
20
30
1300
157
1.5
2.2
1.0
60
150
1.0
1N6311US
3.0
1.3
20
29
1400
141
1.5
2.0
1.0
30
100
1.0
1N6312US
3.3
1.5
20
24
1400
128
1.6
1.8
1.0
5.0
20
1.0
1N6313US
3.6
1.8
20
22
1400
117
1.6
1.65
1.0
3.0
12
1.0
1N6314US
3.9
2.0
20
20
1700
108
1.6
1.5
1.0
2.0
12
1.0
1N6315US
4.3
2.4
20
18
1400
99
0.9
1.4
1.0
2.0
12
1.0
1N6316US
4.7
2.8
20
16
1500
90
0.5
1.27
1.5
5.0
12
1.0
1N6317US
5.1
3.3
20
14
1300
83
0.4
1.17
2.0
5.0
12
1.0
1N6318US
5.6
4.3
20
8.0
1200
76
0.4
1.10
2.5
5.0
10
2.0
1N6319US
6.2
5.2
20
3.0
800
68
0.3
0.97
3.5
5.0
10
5.0
1N6320US
6.8
6.0
20
3.0
400
63
0.35
1.23
4.0
2.0
50
5.0
NOTE 1:
VZ = VZ @ 20 mAdc minus VZ @ 2mAdc
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